1,596 research outputs found
Risk <inf>in polytrauma</inf> factors and prevention of nosocomial pneumonia
No full textNosocomial pneumonia (NK) is one of the most frequent complications of polytrauma leading to death. Meanwhile, the recommendations on prevention of NK in case of polytrauma have not been specified so far. This is due in large part to the lack of study of the pathophysiology of severe combined trauma. The review presents the results of modern experimental and clinical studies of the effect of shock, immune distress syndrome, posttraumatic immunosuppression, the phenomenon of mutual aggravation of lesions, age, sex, concomitant pathology on the risk of NK in polytrauma. The role of iatrogenic risk factors for NK in polytrauma – intubation of trachea and artificial lung ventilation (AVL), massive hemotransfusions, immobilization, the phenomenon of “second strike” after multiple surgeries has been determined. The most effective measures of NK prevention are reduction of the duration of AVL, prevention of oropharyngeal colonization and aspiration in case of AVL, use of inhalation antibacterial drugs, anti-shock measures, early mobilization of the patient, the earliest possible stable functional osteosynthesis by minimally traumatic methods. The data on the effectiveness of selective decontamination of intestines, probiotics and glucocorticosteroids for the prevention of NK in polytrauma are inconsistent. A promising area of NK prophylaxis may be the development of agents that regulate the complex mechanisms of immune response to polytrauma and prevent secondary acute lung injury and post-traumatic immunosuppression
Physics of Atomic Nuclei V. 65, I. 11
No full textdc.description[en_US]Physics of Atomic Nuclei -- November 2002
Volume 65, Issue 11, pp. 1931-2099
80th Anniversary of Yurii Georgievich Abov
pp. 1931-1932 Full Text: PDF (91 kB)
REVIEWS
Dynamical Neutron Diffraction on Perfect Crystals
Yu. G. Abov, N. O. Elyutin, and A. N. Tyulyusov
pp. 1933-1979 Full Text: PDF (946 kB)
Parity Nonconservation in Nuclear Physics
G. A. Lobov
pp. 1980-1984 Full Text: PDF (137 kB)
Methods for Investigating Nuclear Matter under the Conditions Characteristic of Its Transition to Quark���Gluon Plasma
G. A. Leksin
pp. 1985-1994 Full Text: PDF (281 kB)
NUCLEI
Mechanism of Small Variations in Energy of Ultracold Neutrons Interacting with a Surface
E. V. Lychagin, D. G. Kartashov, A. Yu. Muzychka, V. V. Nesvizhevsky, G. V. Nekhaev, and A. V. Strelkov
pp. 1995-1998 Full Text: PDF (214 kB)
Magnetic Resonance in Beta-Active Nuclei 8Li at the Doubled Larmor Frequency in LiF Polycrystals Containing Dislocations
Yu. G. Abov, A. D. Gul'ko, F. S. Dzheparov, S. V. Stepanov, and S. S. Trostin
pp. 1999-2008 Full Text: PDF (268 kB)
Larmor Spin Precession and Neutron Optics
A. I. Frank, I. Anderson, I. V. Bondarenko, A. V. Kozlov, P. H�gh�j, and G. Ehlers
pp. 2009-2020 Full Text: PDF (278 kB)
Precise Atomic Scale Studies of Material Sputtering by Light-Ion Gases in the Prethreshold Energy Region
A. L. Suvorov
pp. 2021-2028 Full Text: PDF (216 kB)
Neutron Transportation in a Closed Vessel
V. K. Ignatovich, E. V. Lychagin, V. V. Nesvizhevsky, G. V. Nekhaev, A. Yu. Muzychka, and A. V. Strelkov
pp. 2029-2035 Full Text: PDF (183 kB)
Ternary-Fission Dynamics and Asymmetries in Reactions with Polarized Neutrons
V. E. Bunakov and F. Goennenwein
pp. 2036-2043 Full Text: PDF (206 kB)
Resonance-Spin Memory in Low-Energy-Gamma-Ray Spectra from Sb, Tb, Ho, and Ta Odd���Odd Compound Nuclei
U. Olejniczak, N. A. Gundorin, L. B. Pikelner, M. Przytula, and D. G. Serov
pp. 2044-2051 Full Text: PDF (241 kB)
Nuclear Relaxation via Paramagnetic Impurities
F. S. Dzheparov, J.-F. Jacquinot, and S. V. Stepanov
pp. 2052-2063 Full Text: PDF (255 kB)
ELEMENTARY PARTICLES AND FIELDS
Study of the K��� --> e���nupi0 Decay
I. V. Ajinenko, S. A. Akimenko, G. A. Akopdzhanov, K. S. Belous, G. I. Britvich, I. G. Britvich, A. P. Filin, V. N. Govorun, A. V. Inyakin, V. A. Khmelnikov, A. S. Konstantinov, V. F. Konstantinov, I. Ya. Korolkov, V. M. Leontiev, V. P. Novikov, V. F. Obraztsov, V. A. Polyakov, V. I. Romanovsky, V. M. Ronjin, V. A. Senko, N. A. Shalanda, M. M. Shapkin, V. I. Shelikhov, N. E. Smirnov, A. A. Sokolov, O. G. Tchikilev, E. V. Vlasov, O. P. Yushchenko, V. N. Bolotov, S. V. Laptev, A. Yu. Polyarush, V. E. Postoev, S. V. Yashchenko, B. Zh. Zalikhanov, and V. Z. Serdyuk
pp. 2064-2069 Full Text: PDF (407 kB)
Search for Exotic Baryons with Hidden Strangeness in Proton Diffractive Production at the Energy of 70 GeV
Yu. M. Antipov et al. (SPHINX Collaboration)
pp. 2070-2076 Full Text: PDF (195 kB)
Neutrino Crown of a Protoneutron Star in the Process of Collapse: Physical Formulation of the Problem
V. S. Imshennik
pp. 2077-2091 Full Text: PDF (303 kB)
Violation of Isotopic Invariance in Strong Interactions and Mass Spectrum of the 1/2+ Baryon Octet
V. K. Grigoriev, O. N. Erofeeva, and V. N. Luzin
pp. 2092-2099 Full Text: PDF (195 kB)dc.description.contributor[en_US]dc.description.contributor[en_US
Physics of Atomic Nuclei V. 65, I. 11
No full textPhysics of Atomic Nuclei -- November 2002
Volume 65, Issue 11, pp. 1931-2099
80th Anniversary of Yurii Georgievich Abov
pp. 1931-1932 Full Text: PDF (91 kB)
REVIEWS
Dynamical Neutron Diffraction on Perfect Crystals
Yu. G. Abov, N. O. Elyutin, and A. N. Tyulyusov
pp. 1933-1979 Full Text: PDF (946 kB)
Parity Nonconservation in Nuclear Physics
G. A. Lobov
pp. 1980-1984 Full Text: PDF (137 kB)
Methods for Investigating Nuclear Matter under the Conditions Characteristic of Its Transition to Quark–Gluon Plasma
G. A. Leksin
pp. 1985-1994 Full Text: PDF (281 kB)
NUCLEI
Mechanism of Small Variations in Energy of Ultracold Neutrons Interacting with a Surface
E. V. Lychagin, D. G. Kartashov, A. Yu. Muzychka, V. V. Nesvizhevsky, G. V. Nekhaev, and A. V. Strelkov
pp. 1995-1998 Full Text: PDF (214 kB)
Magnetic Resonance in Beta-Active Nuclei 8Li at the Doubled Larmor Frequency in LiF Polycrystals Containing Dislocations
Yu. G. Abov, A. D. Gul'ko, F. S. Dzheparov, S. V. Stepanov, and S. S. Trostin
pp. 1999-2008 Full Text: PDF (268 kB)
Larmor Spin Precession and Neutron Optics
A. I. Frank, I. Anderson, I. V. Bondarenko, A. V. Kozlov, P. Høghøj, and G. Ehlers
pp. 2009-2020 Full Text: PDF (278 kB)
Precise Atomic Scale Studies of Material Sputtering by Light-Ion Gases in the Prethreshold Energy Region
A. L. Suvorov
pp. 2021-2028 Full Text: PDF (216 kB)
Neutron Transportation in a Closed Vessel
V. K. Ignatovich, E. V. Lychagin, V. V. Nesvizhevsky, G. V. Nekhaev, A. Yu. Muzychka, and A. V. Strelkov
pp. 2029-2035 Full Text: PDF (183 kB)
Ternary-Fission Dynamics and Asymmetries in Reactions with Polarized Neutrons
V. E. Bunakov and F. Goennenwein
pp. 2036-2043 Full Text: PDF (206 kB)
Resonance-Spin Memory in Low-Energy-Gamma-Ray Spectra from Sb, Tb, Ho, and Ta Odd–Odd Compound Nuclei
U. Olejniczak, N. A. Gundorin, L. B. Pikelner, M. Przytula, and D. G. Serov
pp. 2044-2051 Full Text: PDF (241 kB)
Nuclear Relaxation via Paramagnetic Impurities
F. S. Dzheparov, J.-F. Jacquinot, and S. V. Stepanov
pp. 2052-2063 Full Text: PDF (255 kB)
ELEMENTARY PARTICLES AND FIELDS
Study of the K– --> e–nupi0 Decay
I. V. Ajinenko, S. A. Akimenko, G. A. Akopdzhanov, K. S. Belous, G. I. Britvich, I. G. Britvich, A. P. Filin, V. N. Govorun, A. V. Inyakin, V. A. Khmelnikov, A. S. Konstantinov, V. F. Konstantinov, I. Ya. Korolkov, V. M. Leontiev, V. P. Novikov, V. F. Obraztsov, V. A. Polyakov, V. I. Romanovsky, V. M. Ronjin, V. A. Senko, N. A. Shalanda, M. M. Shapkin, V. I. Shelikhov, N. E. Smirnov, A. A. Sokolov, O. G. Tchikilev, E. V. Vlasov, O. P. Yushchenko, V. N. Bolotov, S. V. Laptev, A. Yu. Polyarush, V. E. Postoev, S. V. Yashchenko, B. Zh. Zalikhanov, and V. Z. Serdyuk
pp. 2064-2069 Full Text: PDF (407 kB)
Search for Exotic Baryons with Hidden Strangeness in Proton Diffractive Production at the Energy of 70 GeV
Yu. M. Antipov et al. (SPHINX Collaboration)
pp. 2070-2076 Full Text: PDF (195 kB)
Neutrino Crown of a Protoneutron Star in the Process of Collapse: Physical Formulation of the Problem
V. S. Imshennik
pp. 2077-2091 Full Text: PDF (303 kB)
Violation of Isotopic Invariance in Strong Interactions and Mass Spectrum of the 1/2+ Baryon Octet
V. K. Grigoriev, O. N. Erofeeva, and V. N. Luzin
pp. 2092-2099 Full Text: PDF (195 kB)Archived web conten
Semiconductors V. 31, I. 06
No full textSemiconductors -- June 1997
Volume 31, Issue 6, pp. 545-649
Study of ZnCdSe/ZnSe quantum wells grown by molecular-beam epitaxy on ZnSe substrates
V. I. Kozlovskii, A. S. Artemov, Yu. V. Korostelin, A. B. Krysa, P. V. Shapkin, P. A. Trubenko, E. M. Dianov, and E. A. Shcherbakov
Full Text: PDF (930 kB)
Mesoscopic effects in the hopping conductivity region of macroscopic quasi-two-dimensional systems
B. A. Aronzon, A. S. Vedeneev, and V. V. Ryl'kov
Full Text: PDF (106 kB)
Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures
I. A. Andreev, E. V. Kunitsyna, V. M. Lantratov, T. V. L'vova, M. P. Mikhailova, and Yu. P. Yakovlev
Full Text: PDF (70 kB)
Radiative recombination on the interface in a p-GaInAsSb/p-InAs type-II (broken-gap) heterostructure upon pulsed excitation
N. L. Bazhenov, G. G. Zegrya, M. P. Mikhailova, K. D. Moiseev, V. A. Smirnov,, O. Yu. Solov'eva, and Yu. P. Yakovlev
Full Text: PDF (79 kB)
Influence of charge carriers on tuning in InAsSb lasers
T. N. Danilova, O. I. Evseenko, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov,, V. V. Sherstnev, and Yu. P. Yakovlev
Full Text: PDF (89 kB)
Depolarization and photoionization effects in quantum wells
A. G. Petrov and A. Ya. Shik
Full Text: PDF (97 kB)
Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix
M. V. Maksimov, Yu. M. Shernyakov, S. V. Zaitsev, N. Yu. Gordeev, A. Yu. Egorov,, A. E. Zhukov, P. S. Kop'ev, A. O. Kosogov, A. V. Sakharov, N. N. Ledentsov,, V. M. Ustinov, A. F. Tsatsul'nikov, Zh. I. Alferov, J. Böhrer, and D. Bimberg
Full Text: PDF (242 kB)
Formation of carrier generation centers in pure Si upon interaction with fast ions
A. M. Ivanov and N. B. Strokan
Full Text: PDF (107 kB)
Influence of hydrostatic pressure on the electron mobility and the correlation properties of a mixed-valence system of iron impurity ions in HgSe:Fe crystals
I. G. Kuleev and G. L. Shtrapenin
Full Text: PDF (107 kB)
Drift-induced production of concentration gratings in an electron-hole plasma in a high-frequency electric field
V. L. Borblik
Full Text: PDF (138 kB)
Thermal-gradient concentration in a bipolar semiconductor with phonon drag of charge carriers
A. M. Konin
Full Text: PDF (77 kB)
Light-emitting diodes based on a metal-insulator-semiconductor structure
V. B. Katok, M. I. Panfilov, and G. E. Chaika
Full Text: PDF (51 kB)
Recombination model of the diffusion of zinc in GaAs
N. N. Grigor'ev and T. A. Kudykina
Full Text: PDF (109 kB)
Kinetics of the redistribution of an impurity in quasiperiodic structures appearing in heavily boron-doped silicon irradiated by boron ions
A. M. Myasnikov, V. I. Obodnikov, V. G. Seryapin, E. G. Tishkovskii, B. I. Fomin, and E. I. Cherepov
Full Text: PDF (83 kB)
Influence of impurity germanium on the properties of sulfur centers in silicon
M. S. Yunusov, M. Karimov, B. L. Oksengendler, and A. Yusupov
Full Text: PDF (77 kB)
Possibility of enhancing a photorefractive hologram using negative differential conductivity
Yu. V. Miklyaev
Full Text: PDF (74 kB)
Dielectric constant and ac conductivity of semi-insulating Cd1 – xMnxTe semiconductors
P. W. Zukowski, A. Rodzik, and Yu. A. Shostak
Full Text: PDF (106 kB)
Anomalous distribution of iron atoms following the simultaneous implantation of Co+ and Fe+ ions in silicon
G. G. Gumarov, V. Yu. Petukhov, V. A. Zhikharev, V. A. Shustov, and I. B. Khaibullin
Full Text: PDF (67 kB)
Features of radiation-induced defect formation in p-type Si
M. S. Yunusov, M. Karimov, M. Alikulov, A. Akhmadaliev, B. L. Oksengendler, and S. S. Sabirov
Full Text: PDF (67 kB)
Schottky barrier breakdown in Si stimulated by exciton drift in a nonuniform electric field at 4.2 K
A. M. Musaev
Full Text: PDF (73 kB)
Influence of ytterbium on radiation-induced defect formation in silicon
F. M. Talipov
Full Text: PDF (45 kB)
Photoluminescence of SiO2 layers implanted with Si+ ions and annealed in a pulsed regime
G. A. Kachurin, I. E. Tyschenko, K. S. Zhuravlev, N. A. Pazdnikov, V. A. Volodin, A. K. Gutakovskii, A. F. Leier, W. Skorupa, and R. A. Yankov
Full Text: PDF (826 kB)
Quantum efficiency of Schottky photodiodes near the long-wavelength edge
V. G. Ivanov, V. I. Panasenkov, and G. V. Ivanov
Full Text: PDF (112 kB)
The photoconductivity of CdxHg1 – xTe (x = 0.2 – 0.3) with an aluminum thin-film coating
É. Yu. Salaev, É. K. Guseinov, N. D. Ismailov, and Atesh Tezer
Full Text: PDF (117 kB)
Temperature dependence of the photoluminescence of porous silicon
P. K. Kashkarov, E. A. Konstantinova, S. A. Petrova, V. Yu. Timoshenko, and A. É. Yunovich
Full Text: PDF (67 kB)
Use of a low-temperature emitter in investigating the spectral characteristics of infrared photodetectors
V. V. Vasil'ev, Yu. P. Mashukov, and V. N. Ovsyuk
Full Text: PDF (81 kB)
Laser-stimulated displacement of the p – n junction boundary in direct-gap GaAsP structures
G. A. Sukach
Full Text: PDF (84 kB)
Capacitive Methods of Semiconductor Purity Control
L. S. Berman
Full Text: PDF (15 kB)Archived web conten
Semiconductors V. 31, I. 06
No full textleave(s) : ill; 28 cm.Semiconductors -- June 1997
Volume 31, Issue 6, pp. 545-649
Study of ZnCdSe/ZnSe quantum wells grown by molecular-beam epitaxy on ZnSe substrates
V. I. Kozlovskii, A. S. Artemov, Yu. V. Korostelin, A. B. Krysa, P. V. Shapkin, P. A. Trubenko, E. M. Dianov, and E. A. Shcherbakov
Full Text: PDF (930 kB)
Mesoscopic effects in the hopping conductivity region of macroscopic quasi-two-dimensional systems
B. A. Aronzon, A. S. Vedeneev, and V. V. Ryl'kov
Full Text: PDF (106 kB)
Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures
I. A. Andreev, E. V. Kunitsyna, V. M. Lantratov, T. V. L'vova, M. P. Mikhailova, and Yu. P. Yakovlev
Full Text: PDF (70 kB)
Radiative recombination on the interface in a p-GaInAsSb/p-InAs type-II (broken-gap) heterostructure upon pulsed excitation
N. L. Bazhenov, G. G. Zegrya, M. P. Mikhailova, K. D. Moiseev, V. A. Smirnov,, O. Yu. Solov'eva, and Yu. P. Yakovlev
Full Text: PDF (79 kB)
Influence of charge carriers on tuning in InAsSb lasers
T. N. Danilova, O. I. Evseenko, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov,, V. V. Sherstnev, and Yu. P. Yakovlev
Full Text: PDF (89 kB)
Depolarization and photoionization effects in quantum wells
A. G. Petrov and A. Ya. Shik
Full Text: PDF (97 kB)
Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix
M. V. Maksimov, Yu. M. Shernyakov, S. V. Zaitsev, N. Yu. Gordeev, A. Yu. Egorov,, A. E. Zhukov, P. S. Kop'ev, A. O. Kosogov, A. V. Sakharov, N. N. Ledentsov,, V. M. Ustinov, A. F. Tsatsul'nikov, Zh. I. Alferov, J. B�_hrer, and D. Bimberg
Full Text: PDF (242 kB)
Formation of carrier generation centers in pure Si upon interaction with fast ions
A. M. Ivanov and N. B. Strokan
Full Text: PDF (107 kB)
Influence of hydrostatic pressure on the electron mobility and the correlation properties of a mixed-valence system of iron impurity ions in HgSe:Fe crystals
I. G. Kuleev and G. L. Shtrapenin
Full Text: PDF (107 kB)
Drift-induced production of concentration gratings in an electron-hole plasma in a high-frequency electric field
V. L. Borblik
Full Text: PDF (138 kB)
Thermal-gradient concentration in a bipolar semiconductor with phonon drag of charge carriers
A. M. Konin
Full Text: PDF (77 kB)
Light-emitting diodes based on a metal-insulator-semiconductor structure
V. B. Katok, M. I. Panfilov, and G. E. Chaika
Full Text: PDF (51 kB)
Recombination model of the diffusion of zinc in GaAs
N. N. Grigor'ev and T. A. Kudykina
Full Text: PDF (109 kB)
Kinetics of the redistribution of an impurity in quasiperiodic structures appearing in heavily boron-doped silicon irradiated by boron ions
A. M. Myasnikov, V. I. Obodnikov, V. G. Seryapin, E. G. Tishkovskii, B. I. Fomin, and E. I. Cherepov
Full Text: PDF (83 kB)
Influence of impurity germanium on the properties of sulfur centers in silicon
M. S. Yunusov, M. Karimov, B. L. Oksengendler, and A. Yusupov
Full Text: PDF (77 kB)
Possibility of enhancing a photorefractive hologram using negative differential conductivity
Yu. V. Miklyaev
Full Text: PDF (74 kB)
Dielectric constant and ac conductivity of semi-insulating Cd1 ��� xMnxTe semiconductors
P. W. Zukowski, A. Rodzik, and Yu. A. Shostak
Full Text: PDF (106 kB)
Anomalous distribution of iron atoms following the simultaneous implantation of Co+ and Fe+ ions in silicon
G. G. Gumarov, V. Yu. Petukhov, V. A. Zhikharev, V. A. Shustov, and I. B. Khaibullin
Full Text: PDF (67 kB)
Features of radiation-induced defect formation in p-type Si
M. S. Yunusov, M. Karimov, M. Alikulov, A. Akhmadaliev, B. L. Oksengendler, and S. S. Sabirov
Full Text: PDF (67 kB)
Schottky barrier breakdown in Si stimulated by exciton drift in a nonuniform electric field at 4.2 K
A. M. Musaev
Full Text: PDF (73 kB)
Influence of ytterbium on radiation-induced defect formation in silicon
F. M. Talipov
Full Text: PDF (45 kB)
Photoluminescence of SiO2 layers implanted with Si+ ions and annealed in a pulsed regime
G. A. Kachurin, I. E. Tyschenko, K. S. Zhuravlev, N. A. Pazdnikov, V. A. Volodin, A. K. Gutakovskii, A. F. Leier, W. Skorupa, and R. A. Yankov
Full Text: PDF (826 kB)
Quantum efficiency of Schottky photodiodes near the long-wavelength edge
V. G. Ivanov, V. I. Panasenkov, and G. V. Ivanov
Full Text: PDF (112 kB)
The photoconductivity of CdxHg1 ��� xTe (x = 0.2 ��� 0.3) with an aluminum thin-film coating
�. Yu. Salaev, �. K. Guseinov, N. D. Ismailov, and Atesh Tezer
Full Text: PDF (117 kB)
Temperature dependence of the photoluminescence of porous silicon
P. K. Kashkarov, E. A. Konstantinova, S. A. Petrova, V. Yu. Timoshenko, and A. �. Yunovich
Full Text: PDF (67 kB)
Use of a low-temperature emitter in investigating the spectral characteristics of infrared photodetectors
V. V. Vasil'ev, Yu. P. Mashukov, and V. N. Ovsyuk
Full Text: PDF (81 kB)
Laser-stimulated displacement of the p ��� n junction boundary in direct-gap GaAsP structures
G. A. Sukach
Full Text: PDF (84 kB)
Capacitive Methods of Semiconductor Purity Control
L. S. Berman
Full Text: PDF (15 kB)The content contained herein is maintained and curated by the Preservation Department.This record is revised and maintained by the content administrators from the Cataloging & Metadata Department
Semiconductors V. 39, I. 04
No full textSemiconductors -- April 2005
Volume 39, Issue 4, pp. 377-484
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Optical Absorption and Chromium Diffusion in ZnSe Single Crystals
Yu. F. Vaksman, V. V. Pavlov, Yu. A. Nitsuk, Yu. N. Purtov, A. S. Nasibov, and P. V. Shapkin
pp. 377-380 Full Text: PDF (54 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Raman Spectra of the Laser-Irradiated GaSe Single Crystals
A. Baidullaeva, Z. K. Vlasenko, B. K. Dauletmuratov, L. F. Kuzan, and P. E. Mozol'
pp. 381-384 Full Text: PDF (60 kB)
The Electrical and Optical Properties of InAs Irradiated with Electrons (~2 MeV): The Energy Structure of Intrinsic Point Defects
V. N. Brudnyi, S. N. Grinyaev, and N. G. Kolin
pp. 385-394 Full Text: PDF (131 kB)
The Transport and Thermoelectric Properties of Semiconducting Rhenium Silicide
A. B. Filonov, A. E. Krivosheev, L. I. Ivanenko, G. Behr, J. Schumann, D. Souptel, and V. E. Borisenko
pp. 395-399 Full Text: PDF (73 kB)
The Effect of the Charge State of Nonequilibrium Vacancies on the Nature of Radiation Defects in n-Si Crystals
T. A. Pagava
pp. 400-401 Full Text: PDF (37 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photoconversion in n-ZnO:Al/PdPc/p-CuIn3Se5 Structures
I. V. Bodnar', E. S. Dmitrieva, S. E. Nikitin, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 402-405 Full Text: PDF (64 kB)
Edge Photoluminescence of Single-Crystal Silicon at Room Temperature
E. G. Gule, E. B. Kaganovich, I. M. Kizyak, E. G. Manoilov, and S. V. Svechnikov
pp. 406-408 Full Text: PDF (41 kB)
Fabrication and Photoelectric Properties of n-ZnO:Al/PdPc/p-Si Structures
G. A. Il'chuk, S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 409-411 Full Text: PDF (50 kB)
LOW-DIMENSIONAL SYSTEMS
Effects of Spatial Reproduction as a Result of the Interference of Electron Waves in Two-Dimensional Semiconductor Nanostructures with Parabolic Quantum Wells
V. A. Petrov and A. V. Nikitin
pp. 412-420 Full Text: PDF (208 kB)
Effective Mass Anisotropy of Gamma Electrons in a GaAs/(AlGa)As Quantum Well
E. E. Vdovin and Yu. N. Khanin
pp. 421-428 Full Text: PDF (136 kB)
A Quasi-Hydrodynamic Simulation of Electrical Conductivity in Selectively Doped Submicrometer-Sized Layered Structures and Island Films in High Electric Fields
V. A. Gergel', Yu. V. Gulyaev, V. A. Kurbatov, and M. N. Yakupov
pp. 429-431 Full Text: PDF (46 kB)
The Exciton Photoluminescence and Vertical Transport of Photoinduced Carriers in CdSe/CdMgSe Superlattices
I. I. Reshina, S. V. Ivanov, D. N. Mirlin, I. V. Sedova, and S. V. Sorokin
pp. 432-438 Full Text: PDF (83 kB)
Resonance Donor States in Quantum Wells
N. A. Bekin
pp. 439-447 Full Text: PDF (101 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Special Features of the Electrical Conductivity in Doped alpha-Si:H Films with Silicon Nanocrystals
S. A. Arzhannikova, M. D. Efremov, G. N. Kamaev, A. V. Vishnyakov, and V. A. Volodin
pp. 448-454 Full Text: PDF (130 kB)
An Electron Spin Resonance Study of Copper–Carbon Systems
B. P. Popov
pp. 455-457 Full Text: PDF (46 kB)
Influence of Pyridine Molecule Adsorption on Concentrations of Free Carriers and Paramagnetic Centers in Porous Silicon Layers
L. A. Osminkina, A. S. Vorontsov, E. A. Konstantinova, V. Yu. Timoshenko, and P. K. Kashkarov
pp. 458-461 Full Text: PDF (72 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Design and Fabrication Technology for Arrays for Vertical-Cavity Surface-Emitting Lasers
N. A. Maleev, A. G. Kuz'menkov, A. E. Zhukov, A. P. Vasil'ev, A. S. Shulenkov, S. V. Chumak, E. V. Nikitina, S. A. Blokhin, M. M. Kulagina, E. S. Semenova, D. A. Livshits, M. V. Maksimov, and V. M. Ustinov
pp. 462-466 Full Text: PDF (137 kB)
A Study of Carrier Statistics in InGaN/GaN LED Structures
D. S. Sizov, V. S. Sizov, E. E. Zavarin, V. V. Lundin, A. V. Fomin, A. F. Tsatsul'nikov, and N. N. Ledentsov
pp. 467-471 Full Text: PDF (76 kB)
Interfacial and Interband Lasing in an InAs/InAsSbP Heterostructure Grown by Vapor-Phase Epitaxy from Metal–Organic Compounds
A. P. Astakhova, N. D. Il'inskaya, A. N. Imenkov, S. S. Kizhaev, S. S. Molchanov, and Yu. P. Yakovlev
pp. 472-476 Full Text: PDF (84 kB)
Effect of p-Doping of the Active Region on the Temperature Stability of InAs/GaAs QD Lasers
I. I. Novikov, N. Yu. Gordeev, L. Ya. Karachinskii, M. V. Maksimov, Yu. M. Shernyakov, A. R. Kovsh, I. L. Krestnikov, A. V. Kozhukhov, S. S. Mikhrin, and N. N. Ledentsov
pp. 477-480 Full Text: PDF (65 kB)
Temperature Dependence of the Effective Coefficient of Auger Recombination in 1.3 µm InAs/GaAs QD Lasers
I. I. Novikov, N. Yu. Gordeev, M. V. Maksimov, Yu. M. Shernyakov, E. S. Semenova, A. P. Vasil'ev, A. E. Zhukov, V. M. Ustinov, and G. G. Zegrya
pp. 481-484 Full Text: PDF (61 kB)Archived web conten
Semiconductors V. 39, I. 04
No full textleave(s) : ill; 28 cm.Semiconductors -- April 2005
Volume 39, Issue 4, pp. 377-484
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Optical Absorption and Chromium Diffusion in ZnSe Single Crystals
Yu. F. Vaksman, V. V. Pavlov, Yu. A. Nitsuk, Yu. N. Purtov, A. S. Nasibov, and P. V. Shapkin
pp. 377-380 Full Text: PDF (54 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Raman Spectra of the Laser-Irradiated GaSe Single Crystals
A. Baidullaeva, Z. K. Vlasenko, B. K. Dauletmuratov, L. F. Kuzan, and P. E. Mozol'
pp. 381-384 Full Text: PDF (60 kB)
The Electrical and Optical Properties of InAs Irradiated with Electrons (~2 MeV): The Energy Structure of Intrinsic Point Defects
V. N. Brudnyi, S. N. Grinyaev, and N. G. Kolin
pp. 385-394 Full Text: PDF (131 kB)
The Transport and Thermoelectric Properties of Semiconducting Rhenium Silicide
A. B. Filonov, A. E. Krivosheev, L. I. Ivanenko, G. Behr, J. Schumann, D. Souptel, and V. E. Borisenko
pp. 395-399 Full Text: PDF (73 kB)
The Effect of the Charge State of Nonequilibrium Vacancies on the Nature of Radiation Defects in n-Si Crystals
T. A. Pagava
pp. 400-401 Full Text: PDF (37 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photoconversion in n-ZnO:Al/PdPc/p-CuIn3Se5 Structures
I. V. Bodnar', E. S. Dmitrieva, S. E. Nikitin, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 402-405 Full Text: PDF (64 kB)
Edge Photoluminescence of Single-Crystal Silicon at Room Temperature
E. G. Gule, E. B. Kaganovich, I. M. Kizyak, E. G. Manoilov, and S. V. Svechnikov
pp. 406-408 Full Text: PDF (41 kB)
Fabrication and Photoelectric Properties of n-ZnO:Al/PdPc/p-Si Structures
G. A. Il'chuk, S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 409-411 Full Text: PDF (50 kB)
LOW-DIMENSIONAL SYSTEMS
Effects of Spatial Reproduction as a Result of the Interference of Electron Waves in Two-Dimensional Semiconductor Nanostructures with Parabolic Quantum Wells
V. A. Petrov and A. V. Nikitin
pp. 412-420 Full Text: PDF (208 kB)
Effective Mass Anisotropy of Gamma Electrons in a GaAs/(AlGa)As Quantum Well
E. E. Vdovin and Yu. N. Khanin
pp. 421-428 Full Text: PDF (136 kB)
A Quasi-Hydrodynamic Simulation of Electrical Conductivity in Selectively Doped Submicrometer-Sized Layered Structures and Island Films in High Electric Fields
V. A. Gergel', Yu. V. Gulyaev, V. A. Kurbatov, and M. N. Yakupov
pp. 429-431 Full Text: PDF (46 kB)
The Exciton Photoluminescence and Vertical Transport of Photoinduced Carriers in CdSe/CdMgSe Superlattices
I. I. Reshina, S. V. Ivanov, D. N. Mirlin, I. V. Sedova, and S. V. Sorokin
pp. 432-438 Full Text: PDF (83 kB)
Resonance Donor States in Quantum Wells
N. A. Bekin
pp. 439-447 Full Text: PDF (101 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Special Features of the Electrical Conductivity in Doped alpha-Si:H Films with Silicon Nanocrystals
S. A. Arzhannikova, M. D. Efremov, G. N. Kamaev, A. V. Vishnyakov, and V. A. Volodin
pp. 448-454 Full Text: PDF (130 kB)
An Electron Spin Resonance Study of Copper���Carbon Systems
B. P. Popov
pp. 455-457 Full Text: PDF (46 kB)
Influence of Pyridine Molecule Adsorption on Concentrations of Free Carriers and Paramagnetic Centers in Porous Silicon Layers
L. A. Osminkina, A. S. Vorontsov, E. A. Konstantinova, V. Yu. Timoshenko, and P. K. Kashkarov
pp. 458-461 Full Text: PDF (72 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Design and Fabrication Technology for Arrays for Vertical-Cavity Surface-Emitting Lasers
N. A. Maleev, A. G. Kuz'menkov, A. E. Zhukov, A. P. Vasil'ev, A. S. Shulenkov, S. V. Chumak, E. V. Nikitina, S. A. Blokhin, M. M. Kulagina, E. S. Semenova, D. A. Livshits, M. V. Maksimov, and V. M. Ustinov
pp. 462-466 Full Text: PDF (137 kB)
A Study of Carrier Statistics in InGaN/GaN LED Structures
D. S. Sizov, V. S. Sizov, E. E. Zavarin, V. V. Lundin, A. V. Fomin, A. F. Tsatsul'nikov, and N. N. Ledentsov
pp. 467-471 Full Text: PDF (76 kB)
Interfacial and Interband Lasing in an InAs/InAsSbP Heterostructure Grown by Vapor-Phase Epitaxy from Metal���Organic Compounds
A. P. Astakhova, N. D. Il'inskaya, A. N. Imenkov, S. S. Kizhaev, S. S. Molchanov, and Yu. P. Yakovlev
pp. 472-476 Full Text: PDF (84 kB)
Effect of p-Doping of the Active Region on the Temperature Stability of InAs/GaAs QD Lasers
I. I. Novikov, N. Yu. Gordeev, L. Ya. Karachinskii, M. V. Maksimov, Yu. M. Shernyakov, A. R. Kovsh, I. L. Krestnikov, A. V. Kozhukhov, S. S. Mikhrin, and N. N. Ledentsov
pp. 477-480 Full Text: PDF (65 kB)
Temperature Dependence of the Effective Coefficient of Auger Recombination in 1.3 ��m InAs/GaAs QD Lasers
I. I. Novikov, N. Yu. Gordeev, M. V. Maksimov, Yu. M. Shernyakov, E. S. Semenova, A. P. Vasil'ev, A. E. Zhukov, V. M. Ustinov, and G. G. Zegrya
pp. 481-484 Full Text: PDF (61 kB)The content contained herein is maintained and curated by the Preservation Department.This record is revised and maintained by the content administrators from the Cataloging & Metadata Department
Observations of Bºs→ψ(2S)η and Bº(s)→ψ(2S)π+π- decays
No full textFirst observations of the B0s
→ψ(2S)η, B0 →ψ(2S)π
+
π
− and B0s
→ψ(2S)π
+
π
− decays are made
using a dataset corresponding to an integrated luminosity of 1.0 fb−1 collected by the LHCb experiment in
proton–proton collisions at a centre-of-mass energy of
√
s = 7 TeV. The ratios of the branching fractions
of each of the ψ(2S) modes with respect to the corresponding J/ψ decays are
B(B0s
→ψ(2S)η)
÷
B(B0s
→J/ψη)
= 0.83± 0.14 (stat)±0.12 (syst) ±0.02 (B),
;
B(B0→ψ(2S)π
+
π
−
)
÷
B(B0→J/ψπ
+
π
−
)
= 0.56± 0.07 (stat)±0.05 (syst)± 0.01 (B),
;
B(B0s
→ψ(2S)π
+
π
−
)
÷
B(B0s
→J/ψπ
+
π
−
)
= 0.34± 0.04 (stat)±0.03 (syst)± 0.01 (B),
where the third uncertainty corresponds to the uncertainties of the dilepton branching fractions of the J/ψ
and ψ(2S) meson decays
Semiconductors V. 35, I. 08
No full textdc.description[en_US]Semiconductors -- August 2001
Volume 35, Issue 8, pp. 861-979
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Growth of Fractal Lithium Clusters in Germanium
S. V. Bulyarskii, V. V. Svetukhin, O. V. Agafonova, A. G. Grishin, and P. A. Il'in
pp. 861-863 Full Text: PDF (49 kB)
Vibration Modes of Oxygen Dimers in Germanium
V. V. Litvinov, L. I. Murin, L. Lindstr�_m, V. P. Markevich, and A. A. Klechko
pp. 864-869 Full Text: PDF (105 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Effect of Deviations from Stoichiometry on Electrical Conductivity and Photoconductivity of CuInSe2 Crystals
M. A. Abdullaev, Dz. Kh. Magomedova, R. M. Gadzhieva, E. I. Terukov, Yu. A. Nikolaev, Yu. V. Rud', and P. P. Khokhlachev
pp. 870-872 Full Text: PDF (61 kB)
The Onset of Double Limiting Cycle in the Impurity-Assisted Electric Breakdown of a Compensated Semiconductor with a Shorted Hall Voltage
K. M. Jandieri and Z. S. Kachlishvili
pp. 873-876 Full Text: PDF (56 kB)
Preparation and Properties of Isotopically Pure Polycrystalline Silicon
O. N. Godisov, A. K. Kaliteevskii, V. I. Korolev, B. Ya. Ber, V. Yu. Davydov, M. A. Kaliteevskii, and P. S. Kop'ev
pp. 877-879 Full Text: PDF (46 kB)
Electrical Properties of CdxHg1 ��� xTe/CdZnTe Heterostructures
A. G. Belov, A. I. Belogorokhov, and V. M. Lakeenkov
pp. 880-882 Full Text: PDF (44 kB)
Native and Impurity Defects in ZnSe:In Single Crystals Prepared by Free Growth
Yu. F. Vaksman, Yu. A. Nitsuk, Yu. N. Purtov, and P. V. Shapkin
pp. 883-889 Full Text: PDF (88 kB)
Origin of an Absorption Band Peaked at 5560 cm���1 and Related to Divacancies in Si1 ��� xGex
Yu. V. Pomozov, M. G. Sosnin, L. I. Khirunenko, N. V. Abrosimov, and W. Schr�_der
pp. 890-894 Full Text: PDF (71 kB)
Photoluminescence Kinetics in GaAs under the Influence of Surface Acoustic Waves
K. S. Zhuravlev, A. M. Gilinskii, A. V. Tsarev, and A. E. Nikolaenko
pp. 895-899 Full Text: PDF (71 kB)
Optical Band Gap of Cd1 ��� xMnxTe and Zn1 ��� xMnxTe Semiconductors
P. V. Zhukovskii, Ya. Partyka, P. Vengerek, Yu. V. Sidorenko, Yu. A. Shostak, and A. Rodzik
pp. 900-903 Full Text: PDF (64 kB)
The Role of Lead in Growing Ga1 ��� XInXAsYSb1 ��� Y Solid Solutions by Liquid-Phase Epitaxy
T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, D. A. Vasyukov, and Yu. P. Yakovlev
pp. 904-911 Full Text: PDF (105 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Interface States and Deep-Level Centers in Silicon-on-Insulator Structures
I. V. Antonova, J. Stano, D. V. Nikolaev, O. V. Naumova, V. P. Popov, and V. A. Skuratov
pp. 912-917 Full Text: PDF (80 kB)
Simultaneous Doping of Silicon Layers with Erbium and Oxygen in the Course of Molecular-Beam Epitaxy
V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, G. A. Maksimov, Z. F. Krasil'nik, B. A. Andreev, M. V. Stepikhova, D. V. Shengurov, L. Palmetshofer, and H. Ellmer
pp. 918-923 Full Text: PDF (147 kB)
Pulsed Laser-Stimulated Surface Acoustic Waves in p-CdTe Crystals
A. Baidullaeva, A. I. Vlasenko, �. I. Kuznetsov, A. V. Lomovtsev, P. E. Mozol', and A. B. Smirnov
pp. 924-926 Full Text: PDF (194 kB)
Analysis of Inherent Potential Nonuniformities at the Extrinsic-Semiconductor Surface
V. B. Bondarenko, M. V. Kuz'min, and V. V. Korablev
pp. 927-931 Full Text: PDF (65 kB)
LOW-DIMENSIONAL SYSTEMS
Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As���GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy
N. N. Faleev, Yu. G. Musikhin, A. A. Suvorova, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, M. Tabuchi, and Y. Takeda
pp. 932-940 Full Text: PDF (238 kB)
Optical Properties of Germanium Monolayers on Silicon
T. M. Burbaev, T. N. Zavaritskaya, V. A. Kurbatov, N. N. Mel'nik, V. A. Tsvetkov, K. S. Zhuravlev, V. A. Markov, and A. I. Nikiforov
pp. 941-946 Full Text: PDF (75 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
The Effect of External Factors on Photoelectric Parameters of Amorphous Hydrogenated Silicon in Relation to the Initial Characteristics of the Films
N. Rakhimov, U. Babakhodzhaev, Kh. Mavlyanov, and R. Ikramov
pp. 947-948 Full Text: PDF (38 kB)
Anomalous Polarization of Raman Scattering by Transverse and Longitudinal Phonons in Porous Doped GaAs
V. N. Denisov, B. N. Mavrin, and V. A. Karavanskii
pp. 949-952 Full Text: PDF (61 kB)
Effect of Temperature on Photoconductivity and Its Decay in Microcrystalline Silicon
A. G. Kazanskii, H. Mell, E. I. Terukov, and P. A. Forsh
pp. 953-955 Full Text: PDF (54 kB)
X-ray Spectroscopic Study of Electronic Structure of Amorphous Silicon and Silicyne
A. I. Mashin, A. F. Khokhlov, �. P. Domashevskaya, V. A. Terekhov, and N. I. Mashin
pp. 956-961 Full Text: PDF (161 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Threshold Characteristics of lambda = 1.55 ��m InGaAsP/InP Heterolasers
G. G. Zegrya, N. A. Pikhtin, G. V. Skrynnikov, S. O. Slipchenko, and I. S. Tarasov
pp. 962-969 Full Text: PDF (96 kB)
An Ionization-Type Si:S-Based Semiconductor Converter of Infrared Images with Sensitivity in the Spectral Range of CO2-Laser Radiation
V. T. Tulanov, Kh. B. Siyabekov, A. Sh. Davletova, and K. A. Ortaeva
pp. 970-973 Full Text: PDF (51 kB)
A Study of Technological Processes in the Production of High-Power High-Voltage Bipolar Transistors Incorporating an Array of Inclusions in the Collector Region
N. I. Volokobinskaya, I. N. Komarov, T. V. Matyukhina, V. I. Reshetnikov, A. A. Rush, I. V. Falina, and A. S. Yastrebov
pp. 974-978 Full Text: PDF (404 kB)
ERRATA
Erratum: "Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing" [Semiconductors 35 (3), 343 (2001)]
L. V. Asryan and R. A. Suris
p. 979 Full Text: PDF (6 kB)dc.description.contributor[en_US]dc.description.contributor[en_US
Semiconductors V. 35, I. 08
No full textSemiconductors -- August 2001
Volume 35, Issue 8, pp. 861-979
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Growth of Fractal Lithium Clusters in Germanium
S. V. Bulyarskii, V. V. Svetukhin, O. V. Agafonova, A. G. Grishin, and P. A. Il'in
pp. 861-863 Full Text: PDF (49 kB)
Vibration Modes of Oxygen Dimers in Germanium
V. V. Litvinov, L. I. Murin, L. Lindström, V. P. Markevich, and A. A. Klechko
pp. 864-869 Full Text: PDF (105 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Effect of Deviations from Stoichiometry on Electrical Conductivity and Photoconductivity of CuInSe2 Crystals
M. A. Abdullaev, Dz. Kh. Magomedova, R. M. Gadzhieva, E. I. Terukov, Yu. A. Nikolaev, Yu. V. Rud', and P. P. Khokhlachev
pp. 870-872 Full Text: PDF (61 kB)
The Onset of Double Limiting Cycle in the Impurity-Assisted Electric Breakdown of a Compensated Semiconductor with a Shorted Hall Voltage
K. M. Jandieri and Z. S. Kachlishvili
pp. 873-876 Full Text: PDF (56 kB)
Preparation and Properties of Isotopically Pure Polycrystalline Silicon
O. N. Godisov, A. K. Kaliteevskii, V. I. Korolev, B. Ya. Ber, V. Yu. Davydov, M. A. Kaliteevskii, and P. S. Kop'ev
pp. 877-879 Full Text: PDF (46 kB)
Electrical Properties of CdxHg1 – xTe/CdZnTe Heterostructures
A. G. Belov, A. I. Belogorokhov, and V. M. Lakeenkov
pp. 880-882 Full Text: PDF (44 kB)
Native and Impurity Defects in ZnSe:In Single Crystals Prepared by Free Growth
Yu. F. Vaksman, Yu. A. Nitsuk, Yu. N. Purtov, and P. V. Shapkin
pp. 883-889 Full Text: PDF (88 kB)
Origin of an Absorption Band Peaked at 5560 cm–1 and Related to Divacancies in Si1 – xGex
Yu. V. Pomozov, M. G. Sosnin, L. I. Khirunenko, N. V. Abrosimov, and W. Schröder
pp. 890-894 Full Text: PDF (71 kB)
Photoluminescence Kinetics in GaAs under the Influence of Surface Acoustic Waves
K. S. Zhuravlev, A. M. Gilinskii, A. V. Tsarev, and A. E. Nikolaenko
pp. 895-899 Full Text: PDF (71 kB)
Optical Band Gap of Cd1 – xMnxTe and Zn1 – xMnxTe Semiconductors
P. V. Zhukovskii, Ya. Partyka, P. Vengerek, Yu. V. Sidorenko, Yu. A. Shostak, and A. Rodzik
pp. 900-903 Full Text: PDF (64 kB)
The Role of Lead in Growing Ga1 – XInXAsYSb1 – Y Solid Solutions by Liquid-Phase Epitaxy
T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, D. A. Vasyukov, and Yu. P. Yakovlev
pp. 904-911 Full Text: PDF (105 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Interface States and Deep-Level Centers in Silicon-on-Insulator Structures
I. V. Antonova, J. Stano, D. V. Nikolaev, O. V. Naumova, V. P. Popov, and V. A. Skuratov
pp. 912-917 Full Text: PDF (80 kB)
Simultaneous Doping of Silicon Layers with Erbium and Oxygen in the Course of Molecular-Beam Epitaxy
V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, G. A. Maksimov, Z. F. Krasil'nik, B. A. Andreev, M. V. Stepikhova, D. V. Shengurov, L. Palmetshofer, and H. Ellmer
pp. 918-923 Full Text: PDF (147 kB)
Pulsed Laser-Stimulated Surface Acoustic Waves in p-CdTe Crystals
A. Baidullaeva, A. I. Vlasenko, É. I. Kuznetsov, A. V. Lomovtsev, P. E. Mozol', and A. B. Smirnov
pp. 924-926 Full Text: PDF (194 kB)
Analysis of Inherent Potential Nonuniformities at the Extrinsic-Semiconductor Surface
V. B. Bondarenko, M. V. Kuz'min, and V. V. Korablev
pp. 927-931 Full Text: PDF (65 kB)
LOW-DIMENSIONAL SYSTEMS
Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As–GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy
N. N. Faleev, Yu. G. Musikhin, A. A. Suvorova, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, M. Tabuchi, and Y. Takeda
pp. 932-940 Full Text: PDF (238 kB)
Optical Properties of Germanium Monolayers on Silicon
T. M. Burbaev, T. N. Zavaritskaya, V. A. Kurbatov, N. N. Mel'nik, V. A. Tsvetkov, K. S. Zhuravlev, V. A. Markov, and A. I. Nikiforov
pp. 941-946 Full Text: PDF (75 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
The Effect of External Factors on Photoelectric Parameters of Amorphous Hydrogenated Silicon in Relation to the Initial Characteristics of the Films
N. Rakhimov, U. Babakhodzhaev, Kh. Mavlyanov, and R. Ikramov
pp. 947-948 Full Text: PDF (38 kB)
Anomalous Polarization of Raman Scattering by Transverse and Longitudinal Phonons in Porous Doped GaAs
V. N. Denisov, B. N. Mavrin, and V. A. Karavanskii
pp. 949-952 Full Text: PDF (61 kB)
Effect of Temperature on Photoconductivity and Its Decay in Microcrystalline Silicon
A. G. Kazanskii, H. Mell, E. I. Terukov, and P. A. Forsh
pp. 953-955 Full Text: PDF (54 kB)
X-ray Spectroscopic Study of Electronic Structure of Amorphous Silicon and Silicyne
A. I. Mashin, A. F. Khokhlov, É. P. Domashevskaya, V. A. Terekhov, and N. I. Mashin
pp. 956-961 Full Text: PDF (161 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Threshold Characteristics of lambda = 1.55 µm InGaAsP/InP Heterolasers
G. G. Zegrya, N. A. Pikhtin, G. V. Skrynnikov, S. O. Slipchenko, and I. S. Tarasov
pp. 962-969 Full Text: PDF (96 kB)
An Ionization-Type Si:S-Based Semiconductor Converter of Infrared Images with Sensitivity in the Spectral Range of CO2-Laser Radiation
V. T. Tulanov, Kh. B. Siyabekov, A. Sh. Davletova, and K. A. Ortaeva
pp. 970-973 Full Text: PDF (51 kB)
A Study of Technological Processes in the Production of High-Power High-Voltage Bipolar Transistors Incorporating an Array of Inclusions in the Collector Region
N. I. Volokobinskaya, I. N. Komarov, T. V. Matyukhina, V. I. Reshetnikov, A. A. Rush, I. V. Falina, and A. S. Yastrebov
pp. 974-978 Full Text: PDF (404 kB)
ERRATA
Erratum: "Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing" [Semiconductors 35 (3), 343 (2001)]
L. V. Asryan and R. A. Suris
p. 979 Full Text: PDF (6 kB)Archived web conten
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