125,087 research outputs found
Going Beyond Counting First Authors in Author Co-citation Analysis
No full textThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Dispelling the Myths Behind First-author Citation Counts
No full textWe conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
Optical and Structural Studies of High-quality Bulk-like GaN Grown by HVPE on a MOVPE AlN Buffer Layer
No full textHigh-quality 400 μm thick GaN has been grown by hydride vapour phase epitaxy (HVPE) on (0 0 0 1) sapphire with a 2 μm thick AlN buffer layer. The material’s crystalline quality and homogeneity was verified by x-ray diffraction (XRD), low-temperature photoluminesence (LT-PL) and LT cathodoluminescence. Plan-view transmission electron microscopy images reveal a low dislocation density of ?1.25 × 10^7 cm^(?2). The residual stress of the material was studied by two complementary techniques. LT-PL spectra show the main neutral donor bound exciton line at 3.4720 eV. This line position suggests virtually strain-free material with a high crystalline quality as indicated by the small full width at half maximum value of 0.78 meV. The presence of well resolved A- and B-free excitons in the LT-PL spectra and the absence of a yellow luminescence band prove the high quality of the HVPE-GaN in terms of purity and crystallinity. These findings are consistent with the XRD results, implying the high crystalline quality of the material grown. Hence, the material studied is well suited as a lattice parameter and thermal-expansion-coefficient matched substrate for further homoepitaxy, as needed for high-quality III-nitride device applications. Strain-free homoepitaxy on native substrates is needed to decrease considerably the defect density and in that way an improvement of the device’s performance and lifetime can be achieved
Delay and distortion of slow light pulses by excitons in ZnO
No full textistortion of light pulses in ZnO caused by both bound and free excitons is demonstrated by time-of-flight spectroscopy. Numerous lines of bound excitons dissect the pulse spectrum and induce slowdown of light propagation around the dips. Exciton-polariton resonances determine the overall pulse delay, which approaches 1.6 ns at 3.374 eV for a 0.3 mm propagation length, as well as the pulse curvature in the time-energy plane and its attenuation. Analysis of cw and time-resolved data yields the excitonic parameters inherent for bulk ZnO. A discrepancy is found between these bulk parameters and those given by surface-probing techniques.Original Publication:T V Shubina, M M Glazov, N A Gippius, A A Toropov, D Lagarde, P Disseix, J Leymarie, B Gil, Galia Pozina, J Peder Bergman and Bo Monemar, Delay and distortion of slow light pulses by excitons in ZnO, 2011, Physical Review B. Condensed Matter and Materials Physics, (84), 7, 075202.http://dx.doi.org/10.1103/PhysRevB.84.075202Copyright: American Physical Societyhttp://www.aps.org
Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AIN buffer layer
No full textHigh-quality 400 mu m thick GaN has been grown by hydride vapour phase epitaxy (HVPE) on (0 0 0 1) sapphire with a 2 Am thick AIN buffer layer. The material's crystalline quality and homogeneity was verified by x-ray diffraction (XRD), low-temperature photoluminesence (LT-PL) and LT cathodoluminescence. Plan-view transmission electron microscopy images reveal a low dislocation density of similar to 1.25 x 10(7) cm(-2). The residual stress of the material was studied by two complementary techniques. LT-PL spectra show the main neutral donor bound exciton line at 3.4720 eV. This line position suggests virtually strain-free material with a high crystalline quality as indicated by the small full width at half maximum value of 0.78 mev The presence of well resolved A- and B-free excitons in the LT-PL spectra and the absence of a yellow luminescence band prove the high quality of the HVPE-GaN in terms of purity and crystallinity. These findings are consistent with the XRD results, implying the high crystalline quality of the material grown. Hence, the material studied is well suited as a lattice parameter and thermal-expansion-coefficient matched substrate for further homoepitaxy, as needed for high-quality Ill-nitride device applications. Strain-free homoepitaxy on native substrates is needed to decrease considerably the defect density and in that way an improvement of the device's performance and lifetime can be achieved
Pragmatic Case Studies as a Source of Unity in Applied Psychology
No full textTo unify or not to unify applied psychology: that is the question. In this article we review pendulum swings in the historical efforts to answer this question—from a comprehensive, positivist, “top-down,” deductive yes between the 1930s and the early 60s, to a postmodern no since then. A rationale and proposal for a limited, “bottom-up,” inductive yes in applied psychology is then presented, employing a case-based paradigm that integrates both positivist and postmodern themes and components. This paradigm is labeled “pragmatic psychology” and, its specific use of case studies, the “Pragmatic Case Study Method” (“PCS Method”). We call for the creation of peer-reviewed journal-databases of pragmatic case studies as a foundational source of unifying applied knowledge in our discipline. As one example, the potential of the PCS Method for unifying different angles of theoretical regard is illustrated in an area of applied psychology, psychotherapy, via the case of Mrs. B. The article then turns to the broader historical and epistemological arguments for the unifying nature of the PCS Method in both applied and basic psychology.Peer reviewe
Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors
No full textWe describe the internal structure of acceptor-bound excitons in wurtzite semiconductors. Our approach consists in first constructing, in the context of angular momentum algebra, the wave functions of the two-hole system that fulfill Paulis exclusions principle. Second, we construct the acceptor-bound exciton states by adding the electron states in a similar manner that two-hole states are constructed. We discuss the optical selection rules for the acceptor-bound exciton recombination. Finally, we compare our theory with experimental data for CdS and GaN. In the specific case of CdS for which much experimental information is available, we demonstrate that, compared with cubic semiconductors, the sign of the short-range hole-exchange interaction is reversed and more than one order of magnitude larger. The whole set of data is interpreted in the context of a large value of the short-range hole-exchange interaction Xi(0)=3.4 +/- 0.2 meV. This value dictates the splitting between the ground-state line I-1 and the other transitions. The values we find for the electron-hole spin-exchange interaction and of the crystal-field splitting of the two-hole state are, respectively, -0.4 +/- 0.1 and 0.2 +/- 0.1 meV. In the case of GaN, the experimental data for the acceptor-bound excitons in the case of Mg and Zn acceptors, show more than one bound-exciton line. We discuss a possible assignment of these states.Original Publication:Bernard Gil, Pierre Bigenwald, Plamen Paskov and Bo Monemar, Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors, 2010, PHYSICAL REVIEW B, (81), 8, 085211.http://dx.doi.org/10.1103/PhysRevB.81.085211Copyright: American Physical Societyhttp://www.aps.org
Dr. Edwin Wright Collection: Author Unknown
No full textNotes - The author relates several short stories about his neighbours including Alex McDonell, homesteading and life around Meanook and Athabasca (1 page
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