356,655 research outputs found
Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm
No full textThe design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented. At 100 K, a single-photon detection efficiency of 4% at 1310 nm wavelength was measured with a dark count rate of ~ 6 megacounts/s, resulting in the lowest reported noise-equivalent power for a Ge-on-Si single-photon avalanche diode detector (1×10-14 WHz-1/2). The first report of 1550 nm wavelength detection efficiency measurements with such a device is presented. A jitter of 300 ps was measured, and preliminary tests on after-pulsing showed only a small increase (a factor of 2) in the normalized dark count rate when the gating frequency was increased from 1 kHz to 1 MHz. These initial results suggest that optimized devices integrated on Si substrates could potentially provide performance comparable to or better than that of many commercially available discrete technologies
Projeção liquidus do sistema Ta-Ge-B
No full textCurrent technological progress has demanded materials that can maintain their physi cal and chemical properties and integrity when submitted to high mechanical stress for
long periods and high temperatures. Ni-based superalloys belong to a class of materials
currently used in these conditions, but they have reached their limit of development and,
therefore, there is a demand for materials that can complement them. Among the materials
with this potential it can be highlighted those based on multiphase microstructures of MR
(Refractory Metals) in thermodynamic equilibrium with intermetallics. The most promis ing results have been obtained with alloys based on Nb-Si-B or Mo-Si-B. A good example
is the MoSi2 phase, as it has a high melting point, 2020 °C, and excellent resistance to oxi dation at high temperatures, however, its toughness and mechanical strength are low, but
if this phase reaches thermodynamic equilibrium with a refractory metal, this metal can
impart the necessary ductility to the alloy. Due to the similarities in chemical structure
existing between the pairs Nb, Si and Ta, Ge, this last pair of chemical elements can be
used to stabilize a desired microstructure and, in addition, they can control diffusion and
oxidation resistance. Thus, the study of the Ta-Ge-B system can be important to assist
in the development of these alloys, especially if associated with thermodynamic modeling
by the CALPHAD method. No information on the liquidus projection or thermodynamic
modeling of the Ta-Ge-B system was found in the literature. Thus, this work presents the
experimental study of the liquidus projection of the Ta-Ge-B system through the analy sis of the solification structure of 17 alloys associated with thermodynamic calculations
by the CALPHAD method. As a result, a partial proposal for the liquidus projection is
presented for the first time in the literature.O progresso tecnológico da atualidade tem demandado materiais que possam manter as
suas propriedades e integridade física e química quando submetidos a grandes esforços
mecânicos por longos períodos e temperaturas elevadas. As superligas à base de Ni per tencem a uma classe de materiais atualmente usados nessas condições, mas tem chegado
ao seu limite de desenvolvimento e, por isso, há uma demanda de materiais que possam
complementá-las. Dentre os materiais com este potencial estão aqueles constituídos de mi croestruturas multifásicas de MR (Metais Refratários) em equilíbrio termodinâmico com
intermetálicos. Os resultados mais promissores têm sido obtidos com as ligas baseadas em
Nb-Si-B ou Mo-Si-B. Um bom exemplo é a fase MoSi2, pois apresenta um alto ponto de
fusão, 2020 °C, e excelente resistência à oxidação em altas temperaturas, no entanto, sua
tenacidade e resistência mecânica são baixas, mas se essa fase entrar em equilíbrio termo dinâmico com um metal refratário, este metal pode conferir a ductibilidade necessária a
liga. Devido às semelhanças na estrutura química existentes entre os pares Nb, Si e Ta,
Ge, esse par de elementos químicos apresentados por último pode ser usado para estabi lizar uma microestrutura desejada e, além disso, podem controlar a difusão e resistência
à oxidação. Assim, o estudo do sistema Ta-Ge-B pode ser importante para auxiliar no
desenvolvimento destas ligas principalmente, se associado a modelagem termodinâmica
pelo método CALPHAD. Não foram encontradas na literatura, informações sobre a pro jeção liquidus ou modelagem termodinâmica do sistema Ta-Ge-B . Assim, este trabalho
apresenta o estudo experimental da projeção liquidus do sistema Ta-Ge-B através da aná lise da estrutura de solidificação de 17 ligas associada aos cálculos termodinâmicos pelo
método CALPHAD. Como resultado, uma proposta parcial para a projeção liquidus é
apresentada pela primeira vez na literatura
Fabrication and characterisation of novel Ge MOSFETs
No full textAs high-k dielectrics are introduced into commercial Si CMOS (Complimentary Metal Oxide Semiconductor) microelectronics, the 40 year channel/dielectric partnership of Si/SiO2 is ended and the door opened for silicon to be replaced as the active channel material in MOSFETs (Metal Oxide Semiconductor Field Effect Transistor). Germanium is a good candidate as it has higher bulk carrier mobilities than silicon. In addition, Si and Ge form a thermodynamically stable SiGe alloy of any composition, allowing Ge to be implemented as a thin layer on the surface of a standard Si substrate. This thesis is a practical investigation on several aspects of Ge CMOS technology.
High-k dielectric Ge p-MOSFETs are electrically characterised. A large variation in interface state densities is demonstrated to be responsible for a threshold voltage shift and this is proportional to reciprocal peak mobility due to the Coulomb scattering of carriers by charged states. A theoretical mobility is fitted to that measured at 4.2 K and confirms that interface states are the main source of interface charged impurities.
The model demonstrates a reduction in the interface charged impurity density in p-MOSFETs that underwent a PMA (Post Metallisation Anneal) in hydrogen atmosphere and that the anneal also reduces the RMS (Root Mean Square) dielectric/semiconductor interface roughness, from an average of 0.60 nm to 0.48 nm.
High-k strained Ge p-MOSFETs are electrically characterised and have peak mobilities at 300 K (470 cm2 V-1 s-1) and 4.2 K (1780 cm2 V-1 s-1) far in excess of those measured for the unstrained Ge p-MOSFETs (285 cm2 V-1 s-1,785 cm2 V-1 s-1 respectively). Strained Ge n-MOSFETs perform significantly worse than standard Si P, - MOSFETs primarily due to a high source/drain resistance.
A 10 nm thick SiGe-01 (On Insulator) layer with a Ge composition of 58% is obtained from a 55 nm Si0_88Ge1o2. initial layer on 100 nm Si-Ol substrate via the germanium condensation technique. For the first time, germanium is demonstrated to diffuse through the BOX (Buried OXide) during Ge-condensation and into the underlying Si substrate. An order of magnitude increase in the calculated ITOX (Internal Thermal OXidation) rate of the BOX in the final stages of Ge-condensation is hypothesised to be responsible for stopping this diffusion
Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications
No full textIn recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky barrier fabrication. This low energy metallisation technique offers numerous advantages over the physical vapour deposition techniques. Electrical characteristics of the grown diodes show a high quality rectifying behaviour with extremely low leakage currents even on highly doped Ge. A non-Arrhenius behaviour of the temperature dependence is observed for the grown Ni/Ge diodes on lowly doped Ge that is explained by a spatial variation of the barrier heights. The inhomogeneity of the barrier hights is explained in line with an intrinsic surface states model for Ge. The understanding of the intrinsic surface states will help to create ohmic contacts for doped n-MOSFETs. NiGe were formed single phase by annealing. Results reveal that by using these high-quality germanide Schottky barriers as the source/drain, the subthreshold leakage currents of a Schottky barrier MOSFET could be minimised, in particular, due to the very low drain/body junction leakage current exhibited by the electrodeposited diodes. The Ni/Ge diodes on highly doped Ge show negative differential conductance at low temperature. This effect is attributed to the intervalley electron transfer in Ge conduction band to a low mobility valley. The results show experimentally that Schottky junctions could be used for hot electron injection in transferred-electron devices. A vertical Co/Ni/Si structure has been fabricated for spin injection and detection in Si. It is shown that the system functions electrically well although no magnetoresistance indicative of spin injection was observed
Measurement of the ratio of branching fractions B(B0→K∗0γ )/B(B0s→φγ ) and the directCP asymmetry inB 0→K∗0γ
No full textThe ratio of branching fractions of the radiative B decays B0→K⁎0γ and B0s→ϕγ has been measured using an integrated luminosity of 1.0 fb−1 of pp collision data collected by the LHCb experiment at a centre-of-mass energy of s√=7TeV. The value obtained is
B(B0→K⁎0γ)B(B0s→ϕγ)=1.23±0.06(stat.)±0.04(syst.)±0.10(fs/fd),
where the first uncertainty is statistical, the second is the experimental systematic uncertainty and the third is associated with the ratio of fragmentation fractions fs/fd. Using the world average value for B(B0→K⁎0γ), the branching fraction B(B0s→ϕγ) is measured to be (3.5±0.4)×10−5.
The direct CP asymmetry in B0→K⁎0γ decays has also been measured with the same data and found to be
ACP(B0→K⁎0γ)=(0.8±1.7(stat.)±0.9(syst.))%.
Both measurements are the most precise to date and are in agreement with the previous experimental results and theoretical expectations
Going Beyond Counting First Authors in Author Co-citation Analysis
No full textThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Transport properties for pure strained Ge quantum well
No full textModulation doped heterostructures consisting of a strained Ge (sGe) quantum well on a Si0.2Ge0.8 virtual substrate have been used to study enhancement of the transport properties of holes in the sGe channel due to the effective reduction of impurity scattering by placing the doping layer away from the channel.
Electrical and structural analysis was performed for sGe heterostructures produced with a range of growth parameters. The highest hole mobility was 1.34×106 cm2 /Vs at 0.5 K for a sGe quantum well in a 'normal' structure (i.e. doped above the channel) at a sheet density of 2.9×1011 cm-2, which is the largest hole mobility reported in Ge to date. 'Inverted' structures (doping layer under the channel) were also studied for different sample parameters such as channel thickness, spacer thickness, doping and different temperature growth, with a hole
mobility as high as 5.08×105 cm2 /Vs at a sheet density of 5.14×1011 cm-2 at 90 mK.
Simulations of the scattering limited mobility for inverted and normal structures were performed and showed that at low sheet density background impurity scattering limits the low temperature hole mobility. However, as the sheet density increases interface roughness scattering becomes the mobility limiting process, especially in the case of inverted structures where the resistivity and mobility anisotropy is more pronounced.
Magnetotransport measurements revealed the lowest reported effective mass for holes in Ge of 0.063±0.001 m0 for the normal structure and 0.07±0.002 m0 & 0.063±0.003 m0 for two inverted structures, and highest Dingle factors of α=78 and 33 for the normal and inverted structures, respectively. The low level of background impurities, high structural quality, and pure Ge channel revealed by structure characterisation are believed to be responsible for these exceptionally high values of mobility
1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots
No full textSelf-assembly Ge quantum dots (QD) on Si and Si/Ge mutli-quantum-wells (MQW) are grown by MBE. The island size and island density was investigated by atomics force microscopy. Ten-layer and twenty-layer MQW were selected for photodiode device fabrication. In photoluminescence (PL), a broad peak around 1.55-mu m wavelength was observed with higher peak intensity for the 10-layer MQW which had less defects than the 20-layer sample. Resonant cavity enhanced (RCE) photodiodes were fabricated by bonding on a SOI wafer. Selected responsivity at 1.55 mu m was successfully demonstrated. (c) 2005 Elsevier B.V. All rights reserved
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Dispelling the Myths Behind First-author Citation Counts
No full textWe conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
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