38,175 research outputs found
Erratum to: Effect of moderate red wine intake on cardiac prognosis after recent acute myocardial infarction of subjects with Type 2 diabetes mellitus (Diabetic Medicine, (2006), 23, 9, (974-981), 10.1111/j.1464-5491.2006.01886.x)
No full textIn an article by Marfella et al, the author name C. Saron is incorrect and should be listed as C. Sardu. Therefore the correct author list is: R. Marfella, F. Cacciapuoti, M. Siniscalchi, F. C. Sasso, F. Marchese, F. Cinone, E. Musacchio, M. A. Marfella, L. Ruggiero, G. Chiorazzo, D. Liberti, G. Chiorazzo, G. F. Nicoletti, C. Sardu, F. D'Andrea, C. Ammendola, M. Verza and L. Coppola.In an article by Marfella et al, the author name C. Saron is incorrect and should be listed as C. Sardu. Therefore the correct author list is: R. Marfella, F. Cacciapuoti, M. Siniscalchi, F. C. Sasso, F. Marchese, F. Cinone, E. Musacchio, M. A. Marfella, L. Ruggiero, G. Chiorazzo, D. Liberti, G. Chiorazzo, G. F. Nicoletti, C. Sardu, F. D'Andrea, C. Ammendola, M. Verza and L. Coppola
semfindr: An R Package for Identifying Influential Cases in Structural Equation Modeling
No full textCheung, S. F., & Lai, M. H. C. (2026). semfindr: An R package for identifying influential cases in structural equation modeling. Multivariate Behavioral Research, 1–9. https://doi.org/10.1080/00273171.2026.2634293 (https://www.tandfonline.com/doi/abs/10.1080/00273171.2026.2634293
A Review of silicon carbide development in MEMS applications
No full textDue to its desirable material properties, Silicon Carbide (SiC) hasbecome an alternative material to replace Si for MicroelectromechanicalSystems (MEMS) applications in harsh environments. To promote SiC MEMSdevelopment towards future cost-effective products, main technology areas inmaterial deposition and processes have attracted significant interest. Thedevelopments in these areas have contributed to the rapid emergence of SiCMEMS prototypes. In this paper, we give an overview of the importantdevelopments in SiC material formation and fabrication processes in recentyears. Some of the most interesting state-of-the-art SiC MEMS devices arereviewed. This highlights the major progresses in SiC MEMS developed thusfar. This paper also looks into the prospect of SiC MEMS drawing attention topotential issues
Fluorination of carbon nanotubes in CF4 plasma
No full textThe effect of CF4 gaseous plasma exposure to single-wall carbon nanotubes (CNTs) has been studied. Raman spectroscopy results show that CNTs have gained more disordered sp3 bonds associated with functionalization, as both the flow rates of gas in the plasma and exposure time in the plasma are increased. Scanning electron microscopy images indicate the CNTs have been preserved after CF4 plasma exposure. X-ray photoelectron spectroscopy provides evidence of carbon to fluorine bonds (C–F) on the CNTs samples after CF4 plasma exposure. Semi-ionic and covalent C–F bonds are prevalent on the CNTs after CF4 exposure with the intensity ratio of the semi-ionic to covalent C–F bond decreasing as the flow rate of CF4 and exposure time in the CF4 plasma is increased
ChanSupplementalMaterial_rev – Supplemental material for Inheritance of Neural Substrates for Motivation and Pleasure
No full textSupplemental material, ChanSupplementalMaterial_rev for Inheritance of Neural Substrates for Motivation and Pleasure by Zhi Li, Yi Wang, Chao Yan, Eric F. C. Cheung, Anna R. Docherty, Pak C. Sham, Raquel E. Gur, Ruben C. Gur and Raymond C. K. Chan in Psychological Science</p
Surface characterisation of inductively coupled plasma etched SiC in SF6/O2
No full textAn inductively coupled plasma (ICP) system has been used to dry etch 4H silicon carbide (SiC) substrate samples in SF6/O2 gas mixture. Under different etching conditions, etch rates have been studied. Dry etch-induced surface chemical bonding modifications have been systematically investigated using X-ray photoelectron spectroscopy (XPS). Various C–F bonds have been observed as etching products on the etched SiC surface. The increase of bias voltage and etch rate enhance not only the intensity of these C–F bonds but also the relative concentration of covalent C–F bonds on the etched SiC surfaces. Atomic force microscopy (AFM) results indicate that our etching process does not induce roughness on the etched surface even at higher bias voltages
Measurement of the ratio of prompt χ c to J / ψ production in pp collisions at √s = 7 TeV
No full textThe prompt production of charmonium χ c and J / ψ states is studied in proton-proton collisions at a centre-of-mass energy of √s = 7 TeV at the Large Hadron Collider. The χ c and J / ψ mesons are identified through their decays χ c → J / ψ γ and J / ψ → μ + μ - using 36 pb - 1 of data collected by the LHCb detector in 2010. The ratio of the prompt production cross-sections for χ c and J / ψ, σ (χ c → J / ψ γ) / σ (J / ψ), is determined as a function of the J / ψ transverse momentum in the range 2 < p T J / ψ < 15 GeV / c. The results are in excellent agreement with next-to-leading order non-relativistic expectations and show a significant discrepancy compared with the colour singlet model prediction at leading order, especially in the low p T J / ψ region
Corrigendum to “Presence and function of kisspeptin/KISS1R system in swine ovarian follicles” (Theriogenology (2018) 115 (1–8), (S0093691X1830147X), (10.1016/j.theriogenology.2018.04.006))
No full textThe authors regret the following changes to the author group G. Basinia, F. Grassellia, S. Bussolatia, R. Ciccimarraa, M. Maranesib, A. Bufalarib, C. Dall'Agliob, F. Parilloc,#, M. Zeranib,c,*. a Dipartimento di Scienze Mediche Veterinarie, Università di Parma, 43126 Parma, Italy. b Dipartimento di Medicina Veterinaria, Università di Perugia, 06126 Perugia Italy. c Scuola di Bioscienze e Medicina Veterinaria, Università di Camerino, 62024 Matelica Italy. # Deceased. * Corresponding author: tel.: +39 0755857642; fax +39 0755857654. E-mail address: [email protected] (M. Zerani). And to the acknowledgements and figures
F. R. Leavis: The Creative University
No full textThis is a critical introduction to the educational thought of F. R. Leavis (1895-1978), the greatest English literary critic of the twentieth century, providing the first in-depth examination of Leavis's ideas in relation to contemporary mass higher education. During the course of a long, prolific and controversial academic career, which saw him take issue with figures such as Wittgenstein, T. S. Eliot and C. P. Snow, Leavis became one of the most articulate advocates for the idea of the university as 'a centre of consciousness and human responsibility' in the face of what he saw as the relentless technological drive of civilisation. With the journal Scrutiny which he co-founded, as well as his critical writings, Leavis became a decisive influence on generations of teachers in Britain and overseas. Widely misrepresented as narrowly elitist, his ideas about 'the creative university', with their radical, student-centred approach to teaching, constitute a powerful resource for a higher education system grappling with the contradictory demands of continuity and change. Based on original research, the study provides an overview of Leavis's life, work and heritage and his educational world view, and a comprehensive exploration of Leavis's pedagogy from theoretical and practical perspectives. It also includes a first-hand account by the author of being taught by Leavis in person
Inductively coupled plasma etching of SiC in SF6/O2 and etch-induced surface chemical bonding modifications
No full text4H silicon carbide (SiC) substrates were dry etched in an inductively coupled plasma (ICP) system, using SF6/O2 gas mixtures. Etch rate and etch mechanisms have been investigated as a function of oxygen concentration in the gas mixture, ICP chuck power, work pressure, and flow rate. Corresponding to these etch conditions, surface information of the etched SiC has been obtained by x-ray photoelectron spectroscopy measurements. The fact that no obvious Si–Si and Si–F bonds were detected on the etched surface of SiC in all our etch experiments suggests efficient removal of Si atoms as volatile products during the processes. However, various kinds of C–F bonds have been detected on the etched SiC surface and the relative intensities of these bonds vary with the etch conditions. In addition, the nature of the incorporated F atoms on the etched surface also depends strongly on etch conditions, which was identified by the change of the relative ratio between semi-ionic and covalent carbon fluorine bonds. The electrical behavior for different bond structures on the etched SiC surface can be one of the basic reasons affecting related devices
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