4,610 research outputs found
Assessing Intercultural Communication Competence of the Filipino and American Managers
No full textThis study builds on work by Matveev and Nelson [1] which investigated the relationship between intercultural communication competence and multicultural team performance using American and Russian managers. This study examines the impact of national culture for Filipino and American subjects. While a relationship between intercultural communication competence and multicultural team performance was found, it did not differ by overall national culture. The three dimensions of intercultural communication competence – team effectiveness, intercultural uncertainty, and intercultural empathy – and overall intercultural communication competence were found to be significantly different between Filipino and Americans
Measurement of the polarization amplitudes and triple product asymmetries in the B0s → Φ Φ decay
No full text<p>Using 1.0 fb−1 of pp collision data collected at a centre-of-mass energy of s√=7 TeV with the LHCb detector, measurements of the polarization amplitudes, strong phase difference and triple product asymmetries in the B0s→ϕϕ decay mode are presented. The measured values are</p>
<p>|A0|2=0.365±0.022(stat)±0.012(syst),|A⊥|2=0.291±0.024(stat)±0.010(syst),cos(δ∥)=−0.844±0.068(stat)±0.029(syst),AU=−0.055±0.036(stat)±0.018(syst),AV=0.010±0.036(stat)±0.018(syst).</p>
Measurement of the ratio of prompt χ c to J / ψ production in pp collisions at √s = 7 TeV
No full textThe prompt production of charmonium χ c and J / ψ states is studied in proton-proton collisions at a centre-of-mass energy of √s = 7 TeV at the Large Hadron Collider. The χ c and J / ψ mesons are identified through their decays χ c → J / ψ γ and J / ψ → μ + μ - using 36 pb - 1 of data collected by the LHCb detector in 2010. The ratio of the prompt production cross-sections for χ c and J / ψ, σ (χ c → J / ψ γ) / σ (J / ψ), is determined as a function of the J / ψ transverse momentum in the range 2 < p T J / ψ < 15 GeV / c. The results are in excellent agreement with next-to-leading order non-relativistic expectations and show a significant discrepancy compared with the colour singlet model prediction at leading order, especially in the low p T J / ψ region
Semiconductors V. 38, I. 10
No full textSemiconductors -- October 2004
Volume 38, Issue 10, pp. 1115-1239
REVIEW
Photosensitive Polymer Semiconductors
E. L. Aleksandrova
pp. 1115-1159 Full Text: PDF (557 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Determination of the Oxygen Diffusion Profile in Polycrystalline Lead Selenide Layers Using Nuclear Microanalysis
A. E. Gamarts, V. M. Lebedev, V. A. Moshnikov, and D. B. Chesnokova
pp. 1160-1163 Full Text: PDF (53 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electronic and Structural Transitions in Pb1 – xGexTe:Ga Alloys under Pressure
E. P. Skipetrov, E. A. Zvereva, O. S. Volkova, A. V. Golubev, A. Yu. Mollaev, R. K. Arslanov, and V. E. Slyn'ko
pp. 1164-1167 Full Text: PDF (57 kB)
Magnetic-Field Dependences of the Conductivity and Hall Factor in MBE-Grown CdXHg1 – XTe Layers
P. A. Bakhtin, S. A. Dvoretskii, V. S. Varavin, A. P. Korobkin, N. N. Mikhailov, and Yu. G. Sidorov
pp. 1168-1171 Full Text: PDF (61 kB)
Effect of Low-Temperature Annealing on Electrical Properties of n-HgCdTe
P. A. Bakhtin, S. A. Dvoretskii, V. S. Varavin, A. P. Korobkin, N. N. Mikhailov, I. V. Sabinina, and Yu. G. Sidorov
pp. 1172-1175 Full Text: PDF (56 kB)
Formation and Study of Buried SiC Layers with a High Content of Radiation Defects
E. V. Bogdanova, V. V. Kozlovski, D. S. Rumyantsev, A. A. Volkova, and A. A. Lebedev
pp. 1176-1178 Full Text: PDF (85 kB)
A Model of Electrical Isolation in GaN and ZnO Bombarded with Light Ions
A. I. Titov, P. A. Karasev, and S. O. Kucheyev
pp. 1179-1186 Full Text: PDF (98 kB)
Optical and Electrical Properties of 4H-SiC Irradiated with Fast Neutrons and High-Energy Heavy Ions
E. V. Kalinina, G. F. Kholuyanov, G. A. Onushkin, D. V. Davydov, A. M. Strel'chuk, A. O. Konstantinov, A. Hallén, A. Yu. Nikiforov, V. A. Skuratov, and K. Havancsak
pp. 1187-1191 Full Text: PDF (92 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Fabrication and Photosensitivity of Heterojunctions Based on CuIn3Se5 Crystals
I. V. Bodnar', S. E. Nikitin, G. A. Il'chuk, V. Yu. Rud', Yu. V. Rud', and M. V. Yakushev
pp. 1192-1197 Full Text: PDF (107 kB)
Influence of Hydrogen Sulfide on Electrical and Photoelectric Properties of Al–p-Si–SnO2:Cu–Ag Heterostructures
S. V. Slobodchikov[dagger], E. V. Russu, É. V. Ivanov, Yu. G. Malinin, and Kh. M. Salikhov
pp. 1198-1201 Full Text: PDF (61 kB)
LOW-DIMENSIONAL SYSTEMS
Suppression of Dome-Shaped Clusters During Molecular Beam Epitaxy of Ge on Si(100)
A. A. Tonkikh, G. E. Cirlin, V. G. Dubrovskii, V. M. Ustinov, and P. Werner
pp. 1202-1206 Full Text: PDF (387 kB)
Effect of Nonradiative Recombination Centers on Photoluminescence Efficiency in Quantum Dot Structures
M. V. Maksimov, D. S. Sizov, A. G. Makarov, I. N. Kayander, L. V. Asryan, A. E. Zhukov, V. M. Ustinov, N. A. Cherkashin, N. A. Bert, N. N. Ledentsov, and D. Bimberg
pp. 1207-1211 Full Text: PDF (98 kB)
Calculation of the Thermoelectric Figure of Merit for Multilayer Structures with Quantum Wells in the Case of Carrier Scattering by Polar Optical Phonons
D. A. Pshenai-Severin and Yu. I. Ravich
pp. 1212-1216 Full Text: PDF (61 kB)
Properties of GaAs Nanowhiskers Grown on a GaAs(111)B Surface Using a Combined Technique
A. A. Tonkikh, G. E. Cirlin, Yu. B. Samsonenko, I. P. Soshnikov, and V. M. Ustinov
pp. 1217-1220 Full Text: PDF (430 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Distribution of the Density of Electronic States in the Energy Gap of Microcrystalline Hydrogenated Silicon
A. G. Kazanskii and K. Yu. Khabarova
pp. 1221-1224 Full Text: PDF (60 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Ge/Si Waveguide Photodiodes with Built-In Layers of Ge Quantum Dots for Fiber-Optic Communication Lines
A. I. Yakimov, A. V. Dvurechenskii, V. V. Kirienko, N. P. Stepina, A. I. Nikiforov, V. V. Ul'yanov, S. V. Chaikovskii, V. A. Volodin, M. D. Efremov, M. S. Seksenbaev, T. S. Shamirzaev, and K. S. Zhuravlev
pp. 1225-1229 Full Text: PDF (72 kB)
Indium Arsenide Light-Emitting Diodes with a Cavity Formed by an Anode Contact and Semiconductor–Air Interface
N. V. Zotova, N. D. Il'inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and V. V. Shustov
pp. 1230-1234 Full Text: PDF (101 kB)
Microwave Field-Effect Transistors Based on Group-III Nitrides
S. B. Aleksandrov, D. A. Baranov, A. P. Kaidash, D. M. Krasovitskii, M. V. Pavlenko, S. I. Petrov, Yu. V. Pogorel'skii, I. A. Sokolov, M. V. Stepanov, V. P. Chalyi, N. B. Gladysheva, A. A. Dorofeev, Yu. A. Matveev, and A. A. Chernyavskii
pp. 1235-1239 Full Text: PDF (60 kB)Archived web conten
Thermoacoustic Instabilities in the Rijke Tube: Experiments and Modeling
No full textThermoacoustic instability can appear in thermal devices when unsteady heat release is coupled with pressure perturbations. This effect results in excitation of eigen acoustic modes of the system. These instabilities are important in various technical applications, for instance, in rocket motors and thermoacoustic engines.
A Rijke tube, representing a resonator with a mean flow and a concentrated heat source, is a convenient system for studying the fundamental physics of thermoacoustic instabilities. At certain values of the main system parameters, a loud sound is generated through a process similar to that in real-world devices prone to thermoacoustic instability. Rijke devices have been extensively employed for research purposes. The current work is intended to overcome the serious deficiencies of previous investigations with regard to estimating experimental errors and the influence of parameter variation on the results. Also, part of the objective here is to account for temperature field non-uniformity and to interpret nonlinear phenomena. The major goals of this study are to deliver accurate experimental results for the transition to instability and the scope and nature of the excited regimes, and to develop a theory that explains and predicts the effects observed.
An electrically heated, horizontally oriented, Rijke tube is used for the experimental study of transition to instability. The stability boundary is quantified as a function of major system parameters with measured uncertainties for the data collected. Hysteresis in the stability boundary is observed for certain operating regimes of the Rijke tube.
An innovative theory is developed for modeling the Rijke oscillations. First, linear theory, incorporating thermal analysis that accurately determines the properties of the modes responsible for the transition to instability, is used to predict the stability boundary. Then, a nonlinear extension of the theory is derived by introducing a hypothesis for a special form of the nonlinear heat transfer function. This nonlinear modeling is shown to predict the hysteresis phenomenon and the limit cycles observed during the tests.
A new, reduced-order modeling approach for combustion instabilities in systems with vortex shedding is derived using the developed analytical framework. A hypothesis for the vortex detachment criterion is introduced, and a kicked oscillator model is applied to produce nonlinear results characteristic for unstable combustion systems.
The experimental system and the mathematical model, developed in this work for the Rijke tube, are recommended for preliminary design and analysis of real-world thermal devices, where thermoacoustic instability is a concern.</p
Astronomy Letters, V. 27, I. 07
No full textAstronomy Letters -- July 2001
Volume 27, Issue 7, pp. 411-480
Radial Distributions of Gamma-Ray Bursts and Type Ib/c Supernovae in Galaxies
D. Yu. Tsvetkov, S. I. Blinnikov, and N. N. Pavlyuk
pp. 411-415 Full Text: PDF (55 kB)
Anisotropy in the Sky Distribution of Short Gamma-Ray Bursts
V. F. Litvin, S. A. Matveev, S. V. Mamedov, and V. V. Orlov
pp. 416-420 Full Text: PDF (423 kB)
Formation of the Spiral Structure in SB Galaxies
V. L. Polyachenko and E. V. Polyachenko
pp. 421-439 Full Text: PDF (467 kB)
An Iterative Method for Simultaneously Computing the Synthesis of Light and Heavy Elements
D. K. Nadyozhin and I. V. Panov
pp. 440-444 Full Text: PDF (70 kB)
A Polarization–Intensity Anticorrelation Diagram for the Solar Coronal Green Line
O. G. Badalyan and J. Sýkora
pp. 445-450 Full Text: PDF (87 kB)
Effects of Activity Complexes and Active Longitudes on Variations in Total Solar Irradiance
A. V. Mordvinov and R. C. Willson
pp. 451-454 Full Text: PDF (141 kB)
Orbital Evolution of Saturn's New Outer Satellites and Their Classification
M. A. Vashkov'yak
pp. 455-463 Full Text: PDF (155 kB)
Celestial-Mechanical Peculiarities of Uranus's Satellite System
M. A. Vashkov'yak
pp. 464-469 Full Text: PDF (75 kB)
Approach–Ejection Correlation in the General Three-Body Problem
V. V. Orlov, A. V. Petrova, and A. I. Martynova
pp. 470-474 Full Text: PDF (73 kB)
Dynamical Causes of Asymmetry in the Arrangement of Gaps in the Asteroid Belt
A. P. Markeev
pp. 475-479 Full Text: PDF (65 kB)
ERRATA
Erratum: "A Two-Dimensional Hydrostatically Equilibrium Atmosphere of a Neutron Star with Given Differential Rotation" [Pis'ma Astron. Zh. 26, 917 (2000); Astronomy Letters 26, 788 (2000)]
V. S. Imshennik and K. V. Manukovskii
p. 480 Full Text: PDF (21 kB)Archived web conten
Semiconductors V. 38, I. 10
No full textdc.description[en_US]Semiconductors -- October 2004
Volume 38, Issue 10, pp. 1115-1239
REVIEW
Photosensitive Polymer Semiconductors
E. L. Aleksandrova
pp. 1115-1159 Full Text: PDF (557 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Determination of the Oxygen Diffusion Profile in Polycrystalline Lead Selenide Layers Using Nuclear Microanalysis
A. E. Gamarts, V. M. Lebedev, V. A. Moshnikov, and D. B. Chesnokova
pp. 1160-1163 Full Text: PDF (53 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electronic and Structural Transitions in Pb1 ��� xGexTe:Ga Alloys under Pressure
E. P. Skipetrov, E. A. Zvereva, O. S. Volkova, A. V. Golubev, A. Yu. Mollaev, R. K. Arslanov, and V. E. Slyn'ko
pp. 1164-1167 Full Text: PDF (57 kB)
Magnetic-Field Dependences of the Conductivity and Hall Factor in MBE-Grown CdXHg1 ��� XTe Layers
P. A. Bakhtin, S. A. Dvoretskii, V. S. Varavin, A. P. Korobkin, N. N. Mikhailov, and Yu. G. Sidorov
pp. 1168-1171 Full Text: PDF (61 kB)
Effect of Low-Temperature Annealing on Electrical Properties of n-HgCdTe
P. A. Bakhtin, S. A. Dvoretskii, V. S. Varavin, A. P. Korobkin, N. N. Mikhailov, I. V. Sabinina, and Yu. G. Sidorov
pp. 1172-1175 Full Text: PDF (56 kB)
Formation and Study of Buried SiC Layers with a High Content of Radiation Defects
E. V. Bogdanova, V. V. Kozlovski, D. S. Rumyantsev, A. A. Volkova, and A. A. Lebedev
pp. 1176-1178 Full Text: PDF (85 kB)
A Model of Electrical Isolation in GaN and ZnO Bombarded with Light Ions
A. I. Titov, P. A. Karasev, and S. O. Kucheyev
pp. 1179-1186 Full Text: PDF (98 kB)
Optical and Electrical Properties of 4H-SiC Irradiated with Fast Neutrons and High-Energy Heavy Ions
E. V. Kalinina, G. F. Kholuyanov, G. A. Onushkin, D. V. Davydov, A. M. Strel'chuk, A. O. Konstantinov, A. Hall�n, A. Yu. Nikiforov, V. A. Skuratov, and K. Havancsak
pp. 1187-1191 Full Text: PDF (92 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Fabrication and Photosensitivity of Heterojunctions Based on CuIn3Se5 Crystals
I. V. Bodnar', S. E. Nikitin, G. A. Il'chuk, V. Yu. Rud', Yu. V. Rud', and M. V. Yakushev
pp. 1192-1197 Full Text: PDF (107 kB)
Influence of Hydrogen Sulfide on Electrical and Photoelectric Properties of Al���p-Si���SnO2:Cu���Ag Heterostructures
S. V. Slobodchikov[dagger], E. V. Russu, �. V. Ivanov, Yu. G. Malinin, and Kh. M. Salikhov
pp. 1198-1201 Full Text: PDF (61 kB)
LOW-DIMENSIONAL SYSTEMS
Suppression of Dome-Shaped Clusters During Molecular Beam Epitaxy of Ge on Si(100)
A. A. Tonkikh, G. E. Cirlin, V. G. Dubrovskii, V. M. Ustinov, and P. Werner
pp. 1202-1206 Full Text: PDF (387 kB)
Effect of Nonradiative Recombination Centers on Photoluminescence Efficiency in Quantum Dot Structures
M. V. Maksimov, D. S. Sizov, A. G. Makarov, I. N. Kayander, L. V. Asryan, A. E. Zhukov, V. M. Ustinov, N. A. Cherkashin, N. A. Bert, N. N. Ledentsov, and D. Bimberg
pp. 1207-1211 Full Text: PDF (98 kB)
Calculation of the Thermoelectric Figure of Merit for Multilayer Structures with Quantum Wells in the Case of Carrier Scattering by Polar Optical Phonons
D. A. Pshenai-Severin and Yu. I. Ravich
pp. 1212-1216 Full Text: PDF (61 kB)
Properties of GaAs Nanowhiskers Grown on a GaAs(111)B Surface Using a Combined Technique
A. A. Tonkikh, G. E. Cirlin, Yu. B. Samsonenko, I. P. Soshnikov, and V. M. Ustinov
pp. 1217-1220 Full Text: PDF (430 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Distribution of the Density of Electronic States in the Energy Gap of Microcrystalline Hydrogenated Silicon
A. G. Kazanskii and K. Yu. Khabarova
pp. 1221-1224 Full Text: PDF (60 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Ge/Si Waveguide Photodiodes with Built-In Layers of Ge Quantum Dots for Fiber-Optic Communication Lines
A. I. Yakimov, A. V. Dvurechenskii, V. V. Kirienko, N. P. Stepina, A. I. Nikiforov, V. V. Ul'yanov, S. V. Chaikovskii, V. A. Volodin, M. D. Efremov, M. S. Seksenbaev, T. S. Shamirzaev, and K. S. Zhuravlev
pp. 1225-1229 Full Text: PDF (72 kB)
Indium Arsenide Light-Emitting Diodes with a Cavity Formed by an Anode Contact and Semiconductor���Air Interface
N. V. Zotova, N. D. Il'inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and V. V. Shustov
pp. 1230-1234 Full Text: PDF (101 kB)
Microwave Field-Effect Transistors Based on Group-III Nitrides
S. B. Aleksandrov, D. A. Baranov, A. P. Kaidash, D. M. Krasovitskii, M. V. Pavlenko, S. I. Petrov, Yu. V. Pogorel'skii, I. A. Sokolov, M. V. Stepanov, V. P. Chalyi, N. B. Gladysheva, A. A. Dorofeev, Yu. A. Matveev, and A. A. Chernyavskii
pp. 1235-1239 Full Text: PDF (60 kB)dc.description.contributor[en_US]dc.description.contributor[en_US
Semiconductors V. 35, I. 12
No full textSemiconductors -- December 2001
Volume 35, Issue 12, pp. 1347-1417
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Paramagnetic Defects in Silicon Carbide Crystals Irradiated with Gamma-Ray Quanta
I. V. Ilyin, E. N. Mokhov, and P. G. Baranov
pp. 1347-1354 Full Text: PDF (117 kB)
Interaction of Hydrogen with Radiation Defects in p-Si Crystals
O. V. Feklisova, N. A. Yarykin, E. B. Yakimov, and J. Weber
pp. 1355-1360 Full Text: PDF (84 kB)
Electrical Properties of the Proton-Irradiated Semi-Insulating GaAs:Cr
V. N. Brudnyi and A. I. Potapov
pp. 1361-1365 Full Text: PDF (80 kB)
Dynamics of Nonequilibrium Gratings Induced in Silicon Films by Femtosecond Laser Pulses
M. F. Galyautdinov, V. S. Lobkov, S. A. Moiseev, and I. V. Negrashov
pp. 1366-1368 Full Text: PDF (55 kB)
Radiative Recombination via Direct Optical Transitions in In1 – xGaxAs (0 <= x <= 0.16) Solid Solutions
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
pp. 1369-1371 Full Text: PDF (49 kB)
Effect of Structural Imperfection on the Spectrum of Deep Levels in 6H-SiC
A. A. Lebedev, D. V. Davydov, A. S. Tregubova, E. V. Bogdanova, M. P. Shcheglov, and M. V. Pavlenko
pp. 1372-1374 Full Text: PDF (457 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
The Contact of Metal with Silicon Carbide: Schottky Barrier Height in Relation to SiC Polytype
S. Yu. Davydov, A. A. Lebedev, O. V. Posrednik, and Yu. M. Tairov
pp. 1375-1377 Full Text: PDF (35 kB)
LOW-DIMENSIONAL SYSTEMS
Ostwald Ripening of Quantum-Dot Nanostructures
R. D. Vengrenovich, Yu. V. Gudyma, and S. V. Yarema
pp. 1378-1382 Full Text: PDF (60 kB)
Kinetics of Exciton Photoluminescence in Low-Dimensional Silicon Structures
A. V. Sachenko, É. B. Kaganovich, É. G. Manoilov, and S. V. Svechnikov
pp. 1383-1389 Full Text: PDF (145 kB)
Renormalization of Energy Spectrum of Quantum Dots under Vibrational Resonance Conditions
A. V. Fedorov, A. V. Baranov, A. Itoh, and Y. Masumoto
pp. 1390-1397 Full Text: PDF (111 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Scanning Tunneling Spectroscopy of a-C:H and a-C:(H, Cu) Films Prepared by Magnetron Sputtering
T. K. Zvonareva, V. I. Ivanov-Omskii, V. V. Rozanov, and L. V. Sharonova
pp. 1398-1403 Full Text: PDF (78 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
InAsSb/InAsSbP Double-Heterostructure Lasers Emitting in the 3–4 µm Spectral Range
T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, and Yu. P. Yakovlev
pp. 1404-1417 Full Text: PDF (183 kB)Archived web conten
Identification of clouds and aurorae in optical data images
No full textIn this paper we present an automatic image recognition technique used to identify clouds and aurorae in digital images, taken with a CCD all-sky imager. The image recognition algorithm uses image segmentation to generate a binary block object image. Object analysis is then performed on the binary block image, the results of which are used to assess whether clouds, aurorae and stars are present in the original image. The need for such an algorithm arises because the optical study of particle precipitation into the Earth's atmosphere by the Ionosphere and Radio Propagation Group at Lancaster generates vast data-sets, over 25 000 images/year, making manual classification of all the images impractical
- …
