5,140 research outputs found
Tsypkin and Jury–Lee Criteria for Synchronization and Stability of Discrete-Time Multiagent Systems
No full textStability of continuous-time consensus algorithms for switching networks with bidirectional interaction
No full text
Measurement of the CP-violating phase \phi s in Bs->J/\psi\pi+\pi- decays
No full textMeasurement of the mixing-induced CP-violating phase phi_s in Bs decays is of prime importance in probing new physics. Here 7421 +/- 105 signal events from the dominantly CP-odd final state J/\psi pi+ pi- are selected in 1/fb of pp collision data collected at sqrt{s} = 7 TeV with the LHCb detector. A time-dependent fit to the data yields a value of phi_s=-0.019^{+0.173+0.004}_{-0.174-0.003} rad, consistent with the Standard Model expectation. No evidence of direct CP violation is found
Opinion Dynamics in Social Networks with Hostile Camps: Consensus vs. Polarization
No full textMost of the distributed protocols for multi-agent consensus assume that the agents are mutually cooperative and “trustful”, and so the couplings among the agents bring the values of their states closer. Opinion dynamics in social groups, however, require beyond these conventional models due to ubiquitous competition and distrust between some pairs of agents, which are usually characterized by repulsive couplings and may lead to clustering of the opinions. A simple yet insightful model of opinion dynamics with both attractive and repulsive couplings was proposed recently by C. Altafini, who examined first-order consensus algorithms over static signed graphs. This protocol establishes modulus consensus, where the opinions become the same in modulus but may differ in signs. In this paper, we extend the modulus consensus model to the case where the network topology is an arbitrary time-varying signed graph and prove reaching modulus consensus under mild sufficient conditions of uniform connectivity of the graph. For cut-balanced graphs, not only sufficient, but also necessary conditions for modulus consensus are given
Evidence for the decay B0→J/ψω and measurement of the relative branching fractions of meson decays to J/ψη and J/ψη′
No full textFirst evidence of the B 0 → J / ψ ω decay is found and the B s 0 → J / ψ η and B s 0 → J / ψ η ′ decays are studied using a dataset corresponding to an integrated luminosity of 1.0 fb -1 collected by the LHCb experiment in proton-proton collisions at a centre-of-mass energy of sqrt(s) = 7 TeV. The branching fractions of these decays are measured relative to that of the B 0 → J / ψ ρ 0 decay:frac(B (B 0 → J / ψ ω), B (B 0 → J / ψ ρ 0)) = 0.89 ± 0.19 (stat) - 0.13 + 0.07 (syst),frac(B (B s 0 → J / ψ η), B (B 0 → J / ψ ρ 0)) = 14.0 ± 1.2 (stat) - 1.5 + 1.1 (syst) - 1.0 + 1.1 (frac(f d, f s)),frac(B (B s 0 → J / ψ η ′), B (B 0 → J / ψ ρ 0)) = 12.7 ± 1.1 (stat) - 1.3 + 0.5 (syst) - 0.9 + 1.0 (frac(f d, f s)), where the last uncertainty is due to the knowledge of f d / f s, the ratio of b-quark hadronization factors that accounts for the different production rate of B 0 and B s 0 mesons. The ratio of the branching fractions of B s 0 → J / ψ η ′ and B s 0 → J / ψ η decays is measured to befrac(B (B s 0 → J / ψ η ′), B (B s 0 → J / ψ η)) = 0.90 ± 0.09 (stat) - 0.02 + 0.06 (syst)
Astronomy Letters, V. 27, I. 07
No full textAstronomy Letters -- July 2001
Volume 27, Issue 7, pp. 411-480
Radial Distributions of Gamma-Ray Bursts and Type Ib/c Supernovae in Galaxies
D. Yu. Tsvetkov, S. I. Blinnikov, and N. N. Pavlyuk
pp. 411-415 Full Text: PDF (55 kB)
Anisotropy in the Sky Distribution of Short Gamma-Ray Bursts
V. F. Litvin, S. A. Matveev, S. V. Mamedov, and V. V. Orlov
pp. 416-420 Full Text: PDF (423 kB)
Formation of the Spiral Structure in SB Galaxies
V. L. Polyachenko and E. V. Polyachenko
pp. 421-439 Full Text: PDF (467 kB)
An Iterative Method for Simultaneously Computing the Synthesis of Light and Heavy Elements
D. K. Nadyozhin and I. V. Panov
pp. 440-444 Full Text: PDF (70 kB)
A Polarization–Intensity Anticorrelation Diagram for the Solar Coronal Green Line
O. G. Badalyan and J. Sýkora
pp. 445-450 Full Text: PDF (87 kB)
Effects of Activity Complexes and Active Longitudes on Variations in Total Solar Irradiance
A. V. Mordvinov and R. C. Willson
pp. 451-454 Full Text: PDF (141 kB)
Orbital Evolution of Saturn's New Outer Satellites and Their Classification
M. A. Vashkov'yak
pp. 455-463 Full Text: PDF (155 kB)
Celestial-Mechanical Peculiarities of Uranus's Satellite System
M. A. Vashkov'yak
pp. 464-469 Full Text: PDF (75 kB)
Approach–Ejection Correlation in the General Three-Body Problem
V. V. Orlov, A. V. Petrova, and A. I. Martynova
pp. 470-474 Full Text: PDF (73 kB)
Dynamical Causes of Asymmetry in the Arrangement of Gaps in the Asteroid Belt
A. P. Markeev
pp. 475-479 Full Text: PDF (65 kB)
ERRATA
Erratum: "A Two-Dimensional Hydrostatically Equilibrium Atmosphere of a Neutron Star with Given Differential Rotation" [Pis'ma Astron. Zh. 26, 917 (2000); Astronomy Letters 26, 788 (2000)]
V. S. Imshennik and K. V. Manukovskii
p. 480 Full Text: PDF (21 kB)Archived web conten
Semiconductors V. 35, I. 12
No full textSemiconductors -- December 2001
Volume 35, Issue 12, pp. 1347-1417
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Paramagnetic Defects in Silicon Carbide Crystals Irradiated with Gamma-Ray Quanta
I. V. Ilyin, E. N. Mokhov, and P. G. Baranov
pp. 1347-1354 Full Text: PDF (117 kB)
Interaction of Hydrogen with Radiation Defects in p-Si Crystals
O. V. Feklisova, N. A. Yarykin, E. B. Yakimov, and J. Weber
pp. 1355-1360 Full Text: PDF (84 kB)
Electrical Properties of the Proton-Irradiated Semi-Insulating GaAs:Cr
V. N. Brudnyi and A. I. Potapov
pp. 1361-1365 Full Text: PDF (80 kB)
Dynamics of Nonequilibrium Gratings Induced in Silicon Films by Femtosecond Laser Pulses
M. F. Galyautdinov, V. S. Lobkov, S. A. Moiseev, and I. V. Negrashov
pp. 1366-1368 Full Text: PDF (55 kB)
Radiative Recombination via Direct Optical Transitions in In1 – xGaxAs (0 <= x <= 0.16) Solid Solutions
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
pp. 1369-1371 Full Text: PDF (49 kB)
Effect of Structural Imperfection on the Spectrum of Deep Levels in 6H-SiC
A. A. Lebedev, D. V. Davydov, A. S. Tregubova, E. V. Bogdanova, M. P. Shcheglov, and M. V. Pavlenko
pp. 1372-1374 Full Text: PDF (457 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
The Contact of Metal with Silicon Carbide: Schottky Barrier Height in Relation to SiC Polytype
S. Yu. Davydov, A. A. Lebedev, O. V. Posrednik, and Yu. M. Tairov
pp. 1375-1377 Full Text: PDF (35 kB)
LOW-DIMENSIONAL SYSTEMS
Ostwald Ripening of Quantum-Dot Nanostructures
R. D. Vengrenovich, Yu. V. Gudyma, and S. V. Yarema
pp. 1378-1382 Full Text: PDF (60 kB)
Kinetics of Exciton Photoluminescence in Low-Dimensional Silicon Structures
A. V. Sachenko, É. B. Kaganovich, É. G. Manoilov, and S. V. Svechnikov
pp. 1383-1389 Full Text: PDF (145 kB)
Renormalization of Energy Spectrum of Quantum Dots under Vibrational Resonance Conditions
A. V. Fedorov, A. V. Baranov, A. Itoh, and Y. Masumoto
pp. 1390-1397 Full Text: PDF (111 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Scanning Tunneling Spectroscopy of a-C:H and a-C:(H, Cu) Films Prepared by Magnetron Sputtering
T. K. Zvonareva, V. I. Ivanov-Omskii, V. V. Rozanov, and L. V. Sharonova
pp. 1398-1403 Full Text: PDF (78 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
InAsSb/InAsSbP Double-Heterostructure Lasers Emitting in the 3–4 µm Spectral Range
T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, and Yu. P. Yakovlev
pp. 1404-1417 Full Text: PDF (183 kB)Archived web conten
Semiconductors V. 38, I. 10
No full textSemiconductors -- October 2004
Volume 38, Issue 10, pp. 1115-1239
REVIEW
Photosensitive Polymer Semiconductors
E. L. Aleksandrova
pp. 1115-1159 Full Text: PDF (557 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Determination of the Oxygen Diffusion Profile in Polycrystalline Lead Selenide Layers Using Nuclear Microanalysis
A. E. Gamarts, V. M. Lebedev, V. A. Moshnikov, and D. B. Chesnokova
pp. 1160-1163 Full Text: PDF (53 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electronic and Structural Transitions in Pb1 – xGexTe:Ga Alloys under Pressure
E. P. Skipetrov, E. A. Zvereva, O. S. Volkova, A. V. Golubev, A. Yu. Mollaev, R. K. Arslanov, and V. E. Slyn'ko
pp. 1164-1167 Full Text: PDF (57 kB)
Magnetic-Field Dependences of the Conductivity and Hall Factor in MBE-Grown CdXHg1 – XTe Layers
P. A. Bakhtin, S. A. Dvoretskii, V. S. Varavin, A. P. Korobkin, N. N. Mikhailov, and Yu. G. Sidorov
pp. 1168-1171 Full Text: PDF (61 kB)
Effect of Low-Temperature Annealing on Electrical Properties of n-HgCdTe
P. A. Bakhtin, S. A. Dvoretskii, V. S. Varavin, A. P. Korobkin, N. N. Mikhailov, I. V. Sabinina, and Yu. G. Sidorov
pp. 1172-1175 Full Text: PDF (56 kB)
Formation and Study of Buried SiC Layers with a High Content of Radiation Defects
E. V. Bogdanova, V. V. Kozlovski, D. S. Rumyantsev, A. A. Volkova, and A. A. Lebedev
pp. 1176-1178 Full Text: PDF (85 kB)
A Model of Electrical Isolation in GaN and ZnO Bombarded with Light Ions
A. I. Titov, P. A. Karasev, and S. O. Kucheyev
pp. 1179-1186 Full Text: PDF (98 kB)
Optical and Electrical Properties of 4H-SiC Irradiated with Fast Neutrons and High-Energy Heavy Ions
E. V. Kalinina, G. F. Kholuyanov, G. A. Onushkin, D. V. Davydov, A. M. Strel'chuk, A. O. Konstantinov, A. Hallén, A. Yu. Nikiforov, V. A. Skuratov, and K. Havancsak
pp. 1187-1191 Full Text: PDF (92 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Fabrication and Photosensitivity of Heterojunctions Based on CuIn3Se5 Crystals
I. V. Bodnar', S. E. Nikitin, G. A. Il'chuk, V. Yu. Rud', Yu. V. Rud', and M. V. Yakushev
pp. 1192-1197 Full Text: PDF (107 kB)
Influence of Hydrogen Sulfide on Electrical and Photoelectric Properties of Al–p-Si–SnO2:Cu–Ag Heterostructures
S. V. Slobodchikov[dagger], E. V. Russu, É. V. Ivanov, Yu. G. Malinin, and Kh. M. Salikhov
pp. 1198-1201 Full Text: PDF (61 kB)
LOW-DIMENSIONAL SYSTEMS
Suppression of Dome-Shaped Clusters During Molecular Beam Epitaxy of Ge on Si(100)
A. A. Tonkikh, G. E. Cirlin, V. G. Dubrovskii, V. M. Ustinov, and P. Werner
pp. 1202-1206 Full Text: PDF (387 kB)
Effect of Nonradiative Recombination Centers on Photoluminescence Efficiency in Quantum Dot Structures
M. V. Maksimov, D. S. Sizov, A. G. Makarov, I. N. Kayander, L. V. Asryan, A. E. Zhukov, V. M. Ustinov, N. A. Cherkashin, N. A. Bert, N. N. Ledentsov, and D. Bimberg
pp. 1207-1211 Full Text: PDF (98 kB)
Calculation of the Thermoelectric Figure of Merit for Multilayer Structures with Quantum Wells in the Case of Carrier Scattering by Polar Optical Phonons
D. A. Pshenai-Severin and Yu. I. Ravich
pp. 1212-1216 Full Text: PDF (61 kB)
Properties of GaAs Nanowhiskers Grown on a GaAs(111)B Surface Using a Combined Technique
A. A. Tonkikh, G. E. Cirlin, Yu. B. Samsonenko, I. P. Soshnikov, and V. M. Ustinov
pp. 1217-1220 Full Text: PDF (430 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Distribution of the Density of Electronic States in the Energy Gap of Microcrystalline Hydrogenated Silicon
A. G. Kazanskii and K. Yu. Khabarova
pp. 1221-1224 Full Text: PDF (60 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Ge/Si Waveguide Photodiodes with Built-In Layers of Ge Quantum Dots for Fiber-Optic Communication Lines
A. I. Yakimov, A. V. Dvurechenskii, V. V. Kirienko, N. P. Stepina, A. I. Nikiforov, V. V. Ul'yanov, S. V. Chaikovskii, V. A. Volodin, M. D. Efremov, M. S. Seksenbaev, T. S. Shamirzaev, and K. S. Zhuravlev
pp. 1225-1229 Full Text: PDF (72 kB)
Indium Arsenide Light-Emitting Diodes with a Cavity Formed by an Anode Contact and Semiconductor–Air Interface
N. V. Zotova, N. D. Il'inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and V. V. Shustov
pp. 1230-1234 Full Text: PDF (101 kB)
Microwave Field-Effect Transistors Based on Group-III Nitrides
S. B. Aleksandrov, D. A. Baranov, A. P. Kaidash, D. M. Krasovitskii, M. V. Pavlenko, S. I. Petrov, Yu. V. Pogorel'skii, I. A. Sokolov, M. V. Stepanov, V. P. Chalyi, N. B. Gladysheva, A. A. Dorofeev, Yu. A. Matveev, and A. A. Chernyavskii
pp. 1235-1239 Full Text: PDF (60 kB)Archived web conten
- …
