46,103 research outputs found
Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core-Shell Nanowires
No full textWe
report the first selective-area growth of high quality InAs(Sb)/GaSb
core–shell nanowires on Si substrates using metal–organic
chemical vapor deposition (MOCVD) without foreign catalysts. Transmission
electron microscopy (TEM) analysis reveals that the overgrowth of
the GaSb shell is highly uniform and coherent with the InAs(Sb) core
without any misfit dislocations. To control the structural properties
and reduce the planar defect density in the self-catalyzed InAs core
nanowires, a trace amount of Sb was introduced during their growth.
As the Sb content increases from 0 to 9.4%, the crystal structure
of the nanowires changes from a mixed wurtzite (WZ)/zinc-blende (ZB)
structure to a perfect ZB phase. Electrical measurements reveal that
both the n-type InAsSb core and p-type GaSb shell can work as active
carrier transport channels, and the transport type of core–shell
nanowires can be tuned by the GaSb shell thickness and back-gate voltage.
This study furthers our understanding of the Sb-induced crystal-phase
control of nanowires. Furthermore, the high quality InAs(Sb)/GaSb
core–shell nanowire arrays obtained here pave the foundation
for the fabrication of the vertical nanowire-based devices on a large
scale and for the study of fundamental quantum physics
Histoire de la Deuxième Guerre Mondiale (1992-1997) (12) - face A
No full textSéminaire organisé et enregistré par l'IHTP (Paris), entre 1992 et 1997 ; sous la direction de Jean-Pierre Azéma et Dominique Veillon. Raymond Aubrac, "Jours du siècle"/France Inter
Histoire de la Deuxième Guerre Mondiale (1992-1997) (12) - face B
No full textSéminaire organisé et enregistré par l'IHTP (Paris), entre 1992 et 1997 ; sous la direction de Jean-Pierre Azéma et Dominique Veillon. Raymond Aubrac, "Jours du siècle"/France Inter
Authorship in the Interstices of History, Biography, Reality and Memory: Histoire(s) du cinéma and Cabra Marcado para Morrer
No full textEste artigo contrasta Histoire(s) du cinéma de Jean-Luc Godard e Cabra Marcado Para Morrer de Eduardo Coutinho, estão engajadas com a questão da autoria no cinema. Enquanto a imagem de Godard enfatiza a capacidade que tem um filme de transmitir a visão de mundo pessoal de um artista, a presença de Coutinho na tela funciona menos como um meio de subjetivar a obra do que como um catalizador instigando cetas reações nos "atores" filmados
Magnetocrystalline anisotropy and Gilbert damping of Co2MnAl films epitaxially grown on GaAs
No full textNorma Coverdale, B.A.: the treatment of women in selected works of Henry de Montherlant
No full textThe aim of this thesis is to determine how women are treated in selectedworks of Henry de Montherlant. This is explored by examining their relationshipswith other women as well as with men. Inevitably, this leads to an analysis ofthe multifaceted area of love. Part I researches Montherlant's prose work and included in this section is the investigation of the importance of 'l'ordre male' to the author and the influence this exerts over his early prose work in the areas of tauromachy, war and sport, and where the male adherence to this concept leaves women. The 'syncretisme et alternance' which is central to Montherlant's thinking is explored in this section.Part 2 is concerned with Montherlant's theatre in which the psychological development of the main characters is of great importance. It is in this section that a comparative study is made of the influence of Mme. Elisabeth Zehrfuss' written contribution to La Reine morte. Her unpublished notes are set out in full in the Appendix. The thesis also draws on the unpublished correspondence between Henry de Montherlant and Elisabeth Zehrfuss between the years 1934 and 1945. An investigation is made as to whether or not there are any differences between the way women are treated in Montherlant's prose and in his theatre and the conclusion is drawn that there are
Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts
No full textWe describe the controlled growth of planar InAsSb nanowires (NWs) on differently oriented Si substrates without any foreign catalysts. Interestingly, the planar InAsSb NWs grew along four criss-crossed (110) directions on an [100]-oriented substrate, two (100) directions plus four (111) directions on an [110]-oriented substrate, and six equivalent (112) directions on an [111]-oriented substrate, which correspond to the projections of (111) family crystal directions on the substrate planes. High-resolution transmission electron microscopy (HRTEM) reveals that the NWs, experienced a transition from out-of-plane to in-plane growth at the early growth stage but still occurred on the {111} plane, which has the lowest surface energy among all the surfaces. Furthermore, the NWs exhibit a pure zinc-blende crystal structure without any defects. A growth model is presented to explain growth of the NWs. In addition, conductive atomic force microscopy shows that electrically rectifying p-n junctions form naturally between the planar InAsSb NWs and the p-type Si substrates. The results presented here could open up a new route way to fabricate highly integrated III-V nanodevices.MOST of China [2012CB932701]; National Natural Science Foundation of China [91433206, 61204076]; Chinese Academy of Sciences [XDA04020411]SCI(E)[email protected]
Notable plant species recently observed in the Luberon Regional Natural Park
No full textL’auteur présente des découvertes récentes de 3 espèces végétales nouvelles pour le territoire du Luberon, voire des Alpes-de-Haute-Provence et du Vaucluse.The author presents recent discoveries of 3 plant species new in the Luberon area, even in the Alpes-de-Haute-Provence and Vaucluse
InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition
No full textWe report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si substrates using metal-organic chemical vapor deposition with no assistance from foreign catalysts. Sb adatoms were observed to strongly influence the morphology of the GaSb shell. In particular, Ga droplets form on the nanowire tips when a relatively low TMSb flow rate is used, whereas the droplets are missing and the radial growth of the GaSb is enhanced due to a reduction in the diffusion length of the Ga adatoms when the TMSb flow rate is increased. Moreover, transmission electron microscopy measurements revealed that the GaSb shell coherently grew on the InAs core. The results obtained here show that the InAs/GaSb core-shell nanowires grown using the Si platform have strong potential in the fabrication of future nanometer-scale devices and in the study of fundamental quantum physics
Justice et politique (18) - face A
No full textSéminaire dirigé par Alain Bancaud, Anne Boigeol, Henry Rousso et Francine Soubiran-Paillet. Enregistré à l'IHTP (Paris), entre 1995 et1998
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