97 research outputs found
sj-docx-3-pie-10.1177_09544089221106970 - Supplemental material for Flow stress and work hardening behaviour of Mg-3Al-1Zn alloy
No full textSupplemental material, sj-docx-3-pie-10.1177_09544089221106970 for Flow stress and work hardening behaviour of Mg-3Al-1Zn alloy by Aarjoo Jaimin, Nitin Kotkunde, Anurag Sadhukhan and
Aditya Raj Anand, Ayush Morchhale, Swadesh Kumar Singh in Proceedings of the Institution of Mechanical Engineers, Part E: Journal of Process Mechanical Engineering</p
sj-docx-4-pie-10.1177_09544089221106970 - Supplemental material for Flow stress and work hardening behaviour of Mg-3Al-1Zn alloy
No full textSupplemental material, sj-docx-4-pie-10.1177_09544089221106970 for Flow stress and work hardening behaviour of Mg-3Al-1Zn alloy by Aarjoo Jaimin, Nitin Kotkunde, Anurag Sadhukhan and
Aditya Raj Anand, Ayush Morchhale, Swadesh Kumar Singh in Proceedings of the Institution of Mechanical Engineers, Part E: Journal of Process Mechanical Engineering</p
sj-docx-1-pie-10.1177_09544089221106970 - Supplemental material for Flow stress and work hardening behaviour of Mg-3Al-1Zn alloy
No full textSupplemental material, sj-docx-1-pie-10.1177_09544089221106970 for Flow stress and work hardening behaviour of Mg-3Al-1Zn alloy by Aarjoo Jaimin, Nitin Kotkunde, Anurag Sadhukhan and
Aditya Raj Anand, Ayush Morchhale, Swadesh Kumar Singh in Proceedings of the Institution of Mechanical Engineers, Part E: Journal of Process Mechanical Engineering</p
sj-docx-2-pie-10.1177_09544089221106970 - Supplemental material for Flow stress and work hardening behaviour of Mg-3Al-1Zn alloy
No full textSupplemental material, sj-docx-2-pie-10.1177_09544089221106970 for Flow stress and work hardening behaviour of Mg-3Al-1Zn alloy by Aarjoo Jaimin, Nitin Kotkunde, Anurag Sadhukhan and
Aditya Raj Anand, Ayush Morchhale, Swadesh Kumar Singh in Proceedings of the Institution of Mechanical Engineers, Part E: Journal of Process Mechanical Engineering</p
Admittance spectroscopy and material modeling for organic electronic applications
No full textOrganic materials, both insulators and semiconductors, led to impressive applications in recent years and particular attention was paid to their performance reliability under realistic atmospheric conditions, fundamental need for the feasibility of organic electronic devices. In this context one of the most critical topics is the investigation of elements affecting device performance, such as trap states at the interface between different materials, and a fundamental target is to provide reliable physical models. By the means of admittance spectroscopy, in this paper, an electrical model was developed to explain the different dynamics of an organic device. Every element of the model was connected to each other through different relationships, each describing a single process. The model provides an efficient parameter extraction method, allowing for example the characterization of the diffusion of mobile ions, the dispersive transport in organic semiconductor bulk, the contact resistance at the metal-organic interface. As a consequence, the model is useful to compare the properties and the performance of devices with respect to the geometries, the materials and the fabrication process conditions
Quantum dots for modern display devices
No full textInternational audienceElectronic displays have always amused people since their beginning from cathode-ray tube screens to modern thin panel displays. Quantum dot (QD) assisted displays are a new addition to the display family; promising more vivid colors and flexibility to modern displays. This chapter offers a comprehensive overview of QDs as a next-generation technology for displays. The unique size-dependent chemical, optical, electronic, and optoelectronic features of QDs make them the most suitable candidate to be used in modern displays owing to wide color gamut and high-power efficiency with lower barrier protection requirements. Herein, we extensively present the display applications of different types of QDs in the existing display technologies and their comparative analysis. Future scope along with the recycling aspects of display devices has also been covered within the sphere in this chapter
Metal oxides in organic solar cells
No full textInternational audienceDespite incredible room-temperature power conversion efficiency beyond 33% in silicon-based inorganic solar cells, organic solar cell (OSC) technology is on the verge of exceeding 19% efficiency. In this chapter, we delineate the architecture of organic solar cells (OSCs) and the supporting skeleton of various metal oxides (MOs) to increase the performance of OSCs. At the start, the chapter provides a brief introduction to OSCs, the importance of MOs in OSCs, and different types of active layers in OSCs. In succession, the use of metal oxides like ZnO, TiO2, WO3, and MoO3 in different layers of OSCs, e.g., hole and electron transport layers, buffer layer, organic active layer, and their fabrication techniques are thoroughly discussed. In addition, the different characterization methods, stability factors, environmental effects, current challenges, and future prospects of OSCs are explored within the scope of this chapter
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