10,087 research outputs found
Relación entre la actividad física y estrés académico en estudiantes de kinesiología de 4° año de la Universidad Católica Silva Henríquez durante el primer semestre 2017
No full textSeminario de título (Kinesiólogo) -- Universidad Católica Silva Henríquez, 2017Descripción del Problema: La actividad física (AF) es uno de los mayores factores
profilácticos para enfermedades no trasmisibles y de gran beneficio a la salud mental, a
pesar de esto los índices de inactividad física y sedentarismo de los jóvenes de 15-24
años en Chile son alarmantes y van en aumento conjunto a la edad. Por otra parte,
estudios afirman que estudiantes de Kinesiología están propensos a desarrollar estrés
académico por su etapa clínica-practica conjunto a sus clases teóricas.
Objetivo: El objetivo de este proyecto es describir sí existe una relación entre los
niveles de AF y estrés académico en los estudiantes de 4° año de Kinesiología de la
UCSH durante el primer semestre del año 2017.
Metodología: El presente estudio utilizó una muestra de 20 estudiantes de 4° de
Kinesiología de la UCSH durante el primer semestre del año 2017, a quienes se
administró el “Cuestionario Mundial de la Actividad Física” (GPAQ, sigla en inglés) y
la “Escala de Estresores Académicos del Cuestionario de Estrés Académico” (ECEA). Y
se calculó la correlación entre la AF y el estrés académico.
Resultados y Conclusión: Los estudiantes realizan en promedio de AF semanal de
601,10 minutos, siendo las mujeres quienes realizan menor AF que los hombres. En
cuanto al estrés académico se identificaron como los factores más estresantes las
deficiencias metodológicas del profesorado, las sobrecargas del estudiante, las
intervenciones en público y los exámenes. Se encontró una correlación negativa entre el
nivel de AF y el estrés académico, aunque no fue estadísticamente significativa (P =
0,206). Lo que explicaría que no existe una causalidad entre la correlación de AF y
estrés académico, por lo tanto, un mayor nivel de AF no disminuiría el nivel de estrés
académico, pero sí a afrontarlo mejor y percibir los factores estresores en menor medida
Isrogrogidda Falka Af-soomaaliga: Aragti ku aadan Midaynta Qoraalkiisa
No full textQoraagu wuxuu diraasad ku sameeyey sidii loo midayn lahaa af Soomaaliga qoraaal ahaan loo adeegsada. Gaar ahaan wuxuu diiradda saarayaa sidii loo midayn lahaa qaababka isrogrogga falalka oo haatan loo adeegsado siyaabo aan midaysanayn.In questo articolo, l'autore analizza e avanza una proposta relativamente alla standardizzazione del somalo scritto, in particolar modo delle forme di coniugazione dei verbi somali che attualmente non sono scritte in modo omogenea.In this article, the author analyzes and provides a proposal about the standardization of written Somali, in particular relating to verb conjugation forms whose orthography still differs today.Cabdirashid M. Ismaaciil, Cabdalla C. Mansuur, Saynab A. Sharci (eds.
Coastal Research and its Economic Justification
No full textProper and thorough planning of coastal engineering projects is discussed and the economie justification of research work indicated. Examples are given concerning navigational problems, coastal protection problems, and harbor sediment problems.KWP-collectio
Midaynta iyo Horumarinta Af-soomaaliga
No full textQoraagu wuxuu maqaalkan ku falanqaynayaa arrimo ku saabsan midaynta af Soomaaliga qoran, oo dadka qaarkood ay ku doodaan in ay dhibaato ka taagantahay, iyagoo u aanaynaya kala duwanaanta lahjadaha Soomaaliyeed iyo farta af Soomaaliga oo aan xasillayn. Qoraha oo soo bandhigayaa in arrimahaasu aanu sax ahayn, wuxuuna muujinayaa caqabadaha dhabta ah ee hortaagan houmarinta af Soomaaliga: afku wuxuu la'yahay dawlad si rasmi ah u adeegsato, weerar ba'anna waxaa ku haya af Ingiriisiga, xagga ereyadana nabaadguur xooggan ayaa ku dhacaya, gaar ahaan ereyada la xiriira dhaqanka Soomaaliyeed.L'autore, in questo articolo, analizzando la questione della lingua somala scritta, cerca di illustrare che la situazione del somalo standard non è cosi problematica come a detta di alcuni somali, specialmente, nell'ortografia e nella differenza tra i dialetti, ma il problema somalo è bensì riscontrabile in altri fattori: la mancanza di un stato che continui ad adottare il somalo come lingua ufficiale, l'estinzione di tantissimi vocaboli in disuso, nonché la forte influenza dalla lingua inglese.The author in this article, in analysing the written somali language, wants to show the somali standard situation is not so bad, like some Somalis say, especially in orthography and in vernaculars difference. In spite of, the somali language problem is recognisable in some others factors: lack of state that usually chooses somali language as official language, extinction of many terms in disuse and also the strong influence of English.Cabdirashid M. Ismaaciil, Cabdalla C. Mansuur, Saynab A. Sharci (eds.
Variational Rashba Effect in GaAlAs/GaAs Heterojunctions
No full textThe Rashba alpha parameter at the Fermi energy of 2DEGs in AlGaAs/GaAs heterojunctions is calculated with a new variational solution to the multi-band envelope-function effective Schroedinger equation based on the 8-band kp Kane model for the bulk. Modified Fang-Howard trial wave-functions that depend on spin and satisfy spin-dependent boundary conditions, are introduced; and the spin splitting is obtained by minimizing the total energy of the 2DEG. The results are compared with simpler model calculations and shown, in particular, to be quite sensitive to the barrier penetration of the first subband wave-function in these heterojunctions
Variational analysis of the Rashba splitting in III-V semiconductor inversion layers
No full textA spin-dependent variational theory is used to analyze the Rashba spin-orbit splitting in two-dimensional electron gases formed in III-V semiconductor inversion layers. The spin split conduction subbands in CdTe/InSb, insulator/InAs, InP/InGaAs, InAlAs/InGaAs, and AlGaAs/GaAs heterojunctions are calculated. The theory, presented here in detail, is based on the 8 x 8 k . p Kane model and on the introduction of simple and convenient spin-dependent Fang-Howard trial functions, and leads to analytical expressions for the split subbands, as well as allows for a detailed knowledge of the Rashba spin-orbit coupling, including its explicit dependence on structure parameters and its decomposition into separate contributions. The Rashba coupling parameter and the population difference in the spin-split subbands, as experimentally determined from the beating pattern of the Shubnikov-de Haas (SdH) oscillations, are obtained as a function of the electron density (n(s)). The separate contributions to the particularly large Rashba splitting in CdTe/InSb heterojunctions are also computed and discussed. It is shown, for example, that due to the spin-dependent boundary conditions, the direct Rashba spin-orbit coupling term in the effective Hamiltonian dominates the splitting only for n(s) > 10(10) cm(-2) while it is the barrier penetration kinetic energy term that gives the largest contribution to the Rashba effect at lower densities
Om inloppet ifrån Östersjön : till SöderTelje eller Egelsta wiken
No full textAuthor: Nathanael Gerhard af Schultén.Dated: "Carlberg den 12 Januari 1806."Digital reproduction, The National Library of Finland, Centre for Preservation and Digitisation, MikkeliA description of the Baltic Sea.TravelEuropeanaSchultén, Nathanael Gerhard af (1750-1825
Variational Rashba splitting in two-dimensional electron gases in III-V semiconductor heterojunctions
No full textControl of the Rashba spin-orbit coupling in semiconductor two-dimensional electron gases (2DEGs) is of fundamental interest to the rapidly evolving semiconductor spintronics and depends on the detailed knowledge of the controversial interface and barrier penetration effects. Based on the 8x8 k center dot p Kane model for the bulk, we propose a spin-dependent variational solution for the conduction subbands of III-V heterojuctions, which reveals analytically the different contributions to the Rashba splitting and its dependency on heterostructure and band parameters as the band offset and effective masses. Perturbation expansions are used to derive renormalized parameters for an effective, simple, and yet accurate one band model. Spin-dependent modified Fang-Howard trial functions, which satisfy the spin-dependent boundary conditions, are then introduced. The subband splitting is given as a function of the variational parameter which is obtained minimizing the total energy of the 2DEG. Our calculations applied to InAlAs/InGaAs heterojunctions, where a near 20% increase in the splitting is observed due to the barrier penetration, are in good agreement with both experiment and exact numerical calculations. Well-known expressions in the limit of a perfect insulating barrier are exactly reproduced
Spin-orbit interaction strength and anisotropy in III-V semiconductor heterojunctions
No full textThe spin-orbit interaction strength for electrons in III-V semiconductor heterojunctions and the corresponding in-plane anisotropy are theoretically studied, considering Rashba and Dresselhaus contributions. Starting from a variational solution of Kane's effective Hamiltonian for the Rashba-split subbands, the total spin-orbit splitting at the Fermi level of the two-dimensional electron gas in III-V heterojunctions is calculated analytically, as a function of the electron density and wave-vector direction, by adding the Dresselhaus contribution within quasidegenerate first-order perturbation theory. Available GaAs and InGaAs experimental data are discussed. Effects of the barrier penetration are identified, and the spin-orbit anisotropy is shown to be determined by more than one parameter, even in the small-k limit, contrary to the commonly used alpha/beta (where alpha is the Rashba and beta the Dresselhaus interaction) single-parameter picture. DOI: 10.1103/PhysRevB.87.08130
Dwing als gebiedsontwikkelaar een duidelijke opdracht af
No full textTerwijl de context waarin gebiedsontwikkelaars werken alleen maar complexer wordt, ziet Co Verdaas, hoogleraar gebiedsontwikkeling, een aanhoudende neiging om keuzes vooruit te schuiven of te verhullen. Hij geeft zes tips om gebiedsontwikkelaars in hun kracht te zetten. “Zonder escalatie geen resultaat zou het devies moeten zijn.”Practice Chair Urban Area Developmen
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