53 research outputs found
SOUFFLE DE VIE : QUATORZE CANTIQUES POUR L'ANNEE LITURGIQUE / LA CHORALE ALLELUIA ; dir : ABBE REBOUD
No full textComprend : L'ANGE DE DIEU" Vieux choral alsacien / M. FUSTIER, J. BONFILS - O JESUS, QUAND TU T'ABAISSES / P. LOROGIOLA, GOUDIMEL - SOUFFLE DE VIE / J. VERGRIETE, D. JULIEN, R. REBOUD - MYSTERE DU CALVAIRE / ROZIER, D. RIMAUD, J.S. BACH - JE CROIS EN DIEU / CL. ROZIER D. RIMAUD, GOUDIMEL, M. ROSE - SEIGNEUR, JE N'OSE PAS VOUS DIRE / P. PELOT, NEUMARK, J.S. BACH - JE REGARDE VERS LES MONTAGNES / Texte et musique de R. REBOUD - TERRE ENTIERE / J. LECLERCQ, L. DEISS, R. REBOUD - NOUS T'OFFRONS CE PAIN / L. BARJON, J.S. BACH - CHANT DE MARIAGE / J.C. RENARD, R. REBOUD - JOYEUSE LUMIERE / Texte et musique de P. LUCIEN DEISS - VOUS PRENEZ, SEIGNEUR, L'APPARENCE / P. GEGHRE, J.S. BACH - UN PETIT ENFANT EST NE : Mélodie anglaise / Texte et harmonisation de R. REBOUD - HOSANNA, LA SAINTE CROIX / P. DONCOEURBnF-Partenariats, Collection sonore - BelieveContient une table des matière
Alimentation basse tension avec asservissement transistorisé
No full textA low voltage high current (30V, 8A) power supply with a transistorized servomechanism is described. The current delivered is proportionnal to a reference current, the factor of proportionality can be varied, to a certain extent, according the special conditions of the experiment.L'article décrit une alimentation stabilisée basse tension (30V, 8A) avec asservissement transistorisé, destinée à alimenter les lentilles quadrupolaires de focalisation d'un faisceau d'ions de 1 à 3 MeV, le courant de focalisation devant varier proportionnellement à un autre courant (courant de l'aimant analyseur), le facteur de proportionnalité dépendant des conditions spéciales à chaque expérience (distance focale, écartement des lentilles, dimension de la cible, etc...)
Secondary ion mass spectrometry (SIMS) analysis of (113) PIN & NIP diamond structures
No full textInternational audienceWith tremendous physical properties, diamond is considered to be the ultimate semiconductor for high power electronics. Indeed, diamond is awaited to endure high electric fields with low leakage current. It is then a candidate of choice for high voltage and high temperature power electronics. Even if some incursions were made on the (110) orientation, the conventional crystalline orientations used for diamond are (111) and (100). Lying in between, (113) is a stable growth orientation during chemical vapor deposition and could allow obtaining enlarged crystals. For p-type doping with boron, the LSPM lab has proven the interest of the (113) orientation by growing p-type free-standing plates with equivalent quality to (100) orientation and, very recently, enlarged (113) p+-substrates [1]. For n-type doping with phosphorus, the GEMaC lab has shown that the (113) orientation give access to lower compensation ratio than (100) with higher electron mobility [2] at temperature above 450°C. All those results pave the way for the realization (113) diamond bipolar devices. In the framework of the ANR-LAPIN113 project [3], the LAAS lab, specialized in power devices simulation and fabrication, has defined the “ideal” PIN and NIP stacks that might ensure the target breakdown voltage. LSPM and GEMaC labs were then in charge of the synthesis to get requested PIN and NIP structures. Thanks to secondary ion mass spectrometry (SIMS), we analysed the depth-distributions of dopants over each structure. The depth profiles reveal the ability of the grower labs to achieve requested PIN and NIP structures on (113) orientation. The knowledge of the exact doping profiles will allow to simulate diode characteristics and help to understand the future experimental measurements of the diodes that will be performed on the PIN and NIP structures. References1.R. Mesples-Carrère, R. Issaoui, A. Valentin, L. Banaigs, O. Brinza, F. Bénédic, J. achard. Diamond Relat. Mater. 149 (2024), 111659. https://doi.org/10.1016/j.diamond.2024.111659 2.M.-A. Pinault-Thaury, I. Stenger, R. Gillet, S. Temgoua, E. Chikoidze, Y. Dumont, F. Jomard, T. Kociniewski, J. Barjon. Carbon 175 (2021) 254. https://doi.org/10.1016/j.carbon.2021.01.011 3.For information about the ANR-LAPIN113 project see https://anr.fr/Projet-ANR-20-CE05-003
Secondary ion mass spectrometry (SIMS) analysis of (113) PIN & NIP diamond structures
No full textInternational audienceWith tremendous physical properties, diamond is considered to be the ultimate semiconductor for high power electronics. Indeed, diamond is awaited to endure high electric fields with low leakage current. It is then a candidate of choice for high voltage and high temperature power electronics. Even if some incursions were made on the (110) orientation, the conventional crystalline orientations used for diamond are (111) and (100). Lying in between, (113) is a stable growth orientation during chemical vapor deposition and could allow obtaining enlarged crystals. For p-type doping with boron, the LSPM lab has proven the interest of the (113) orientation by growing p-type free-standing plates with equivalent quality to (100) orientation and, very recently, enlarged (113) p+-substrates [1]. For n-type doping with phosphorus, the GEMaC lab has shown that the (113) orientation give access to lower compensation ratio than (100) with higher electron mobility [2] at temperature above 450°C. All those results pave the way for the realization (113) diamond bipolar devices. In the framework of the ANR-LAPIN113 project [3], the LAAS lab, specialized in power devices simulation and fabrication, has defined the “ideal” PIN and NIP stacks that might ensure the target breakdown voltage. LSPM and GEMaC labs were then in charge of the synthesis to get requested PIN and NIP structures. Thanks to secondary ion mass spectrometry (SIMS), we analysed the depth-distributions of dopants over each structure. The depth profiles reveal the ability of the grower labs to achieve requested PIN and NIP structures on (113) orientation. The knowledge of the exact doping profiles will allow to simulate diode characteristics and help to understand the future experimental measurements of the diodes that will be performed on the PIN and NIP structures. References1.R. Mesples-Carrère, R. Issaoui, A. Valentin, L. Banaigs, O. Brinza, F. Bénédic, J. achard. Diamond Relat. Mater. 149 (2024), 111659. https://doi.org/10.1016/j.diamond.2024.111659 2.M.-A. Pinault-Thaury, I. Stenger, R. Gillet, S. Temgoua, E. Chikoidze, Y. Dumont, F. Jomard, T. Kociniewski, J. Barjon. Carbon 175 (2021) 254. https://doi.org/10.1016/j.carbon.2021.01.011 3.For information about the ANR-LAPIN113 project see https://anr.fr/Projet-ANR-20-CE05-003
Secondary ion mass spectrometry (SIMS) analysis of (113) PIN & NIP diamond structures
No full textInternational audienceWith tremendous physical properties, diamond is considered to be the ultimate semiconductor for high power electronics. Indeed, diamond is awaited to endure high electric fields with low leakage current. It is then a candidate of choice for high voltage and high temperature power electronics. Even if some incursions were made on the (110) orientation, the conventional crystalline orientations used for diamond are (111) and (100). Lying in between, (113) is a stable growth orientation during chemical vapor deposition and could allow obtaining enlarged crystals. For p-type doping with boron, the LSPM lab has proven the interest of the (113) orientation by growing p-type free-standing plates with equivalent quality to (100) orientation and, very recently, enlarged (113) p+-substrates [1]. For n-type doping with phosphorus, the GEMaC lab has shown that the (113) orientation give access to lower compensation ratio than (100) with higher electron mobility [2] at temperature above 450°C. All those results pave the way for the realization (113) diamond bipolar devices. In the framework of the ANR-LAPIN113 project [3], the LAAS lab, specialized in power devices simulation and fabrication, has defined the “ideal” PIN and NIP stacks that might ensure the target breakdown voltage. LSPM and GEMaC labs were then in charge of the synthesis to get requested PIN and NIP structures. Thanks to secondary ion mass spectrometry (SIMS), we analysed the depth-distributions of dopants over each structure. The depth profiles reveal the ability of the grower labs to achieve requested PIN and NIP structures on (113) orientation. The knowledge of the exact doping profiles will allow to simulate diode characteristics and help to understand the future experimental measurements of the diodes that will be performed on the PIN and NIP structures. References1.R. Mesples-Carrère, R. Issaoui, A. Valentin, L. Banaigs, O. Brinza, F. Bénédic, J. achard. Diamond Relat. Mater. 149 (2024), 111659. https://doi.org/10.1016/j.diamond.2024.111659 2.M.-A. Pinault-Thaury, I. Stenger, R. Gillet, S. Temgoua, E. Chikoidze, Y. Dumont, F. Jomard, T. Kociniewski, J. Barjon. Carbon 175 (2021) 254. https://doi.org/10.1016/j.carbon.2021.01.011 3.For information about the ANR-LAPIN113 project see https://anr.fr/Projet-ANR-20-CE05-003
Secondary ion mass spectrometry (SIMS) analysis of (113) PIN & NIP diamond structures
No full textInternational audienceWith tremendous physical properties, diamond is considered to be the ultimate semiconductor for high power electronics. Indeed, diamond is awaited to endure high electric fields with low leakage current. It is then a candidate of choice for high voltage and high temperature power electronics. Even if some incursions were made on the (110) orientation, the conventional crystalline orientations used for diamond are (111) and (100). Lying in between, (113) is a stable growth orientation during chemical vapor deposition and could allow obtaining enlarged crystals. For p-type doping with boron, the LSPM lab has proven the interest of the (113) orientation by growing p-type free-standing plates with equivalent quality to (100) orientation and, very recently, enlarged (113) p+-substrates [1]. For n-type doping with phosphorus, the GEMaC lab has shown that the (113) orientation give access to lower compensation ratio than (100) with higher electron mobility [2] at temperature above 450°C. All those results pave the way for the realization (113) diamond bipolar devices. In the framework of the ANR-LAPIN113 project [3], the LAAS lab, specialized in power devices simulation and fabrication, has defined the “ideal” PIN and NIP stacks that might ensure the target breakdown voltage. LSPM and GEMaC labs were then in charge of the synthesis to get requested PIN and NIP structures. Thanks to secondary ion mass spectrometry (SIMS), we analysed the depth-distributions of dopants over each structure. The depth profiles reveal the ability of the grower labs to achieve requested PIN and NIP structures on (113) orientation. The knowledge of the exact doping profiles will allow to simulate diode characteristics and help to understand the future experimental measurements of the diodes that will be performed on the PIN and NIP structures. References1.R. Mesples-Carrère, R. Issaoui, A. Valentin, L. Banaigs, O. Brinza, F. Bénédic, J. achard. Diamond Relat. Mater. 149 (2024), 111659. https://doi.org/10.1016/j.diamond.2024.111659 2.M.-A. Pinault-Thaury, I. Stenger, R. Gillet, S. Temgoua, E. Chikoidze, Y. Dumont, F. Jomard, T. Kociniewski, J. Barjon. Carbon 175 (2021) 254. https://doi.org/10.1016/j.carbon.2021.01.011 3.For information about the ANR-LAPIN113 project see https://anr.fr/Projet-ANR-20-CE05-003
Secondary ion mass spectrometry (SIMS) analysis of (113) PIN & NIP diamond structures
No full textInternational audienceWith tremendous physical properties, diamond is considered to be the ultimate semiconductor for high power electronics. Indeed, diamond is awaited to endure high electric fields with low leakage current. It is then a candidate of choice for high voltage and high temperature power electronics. Even if some incursions were made on the (110) orientation, the conventional crystalline orientations used for diamond are (111) and (100). Lying in between, (113) is a stable growth orientation during chemical vapor deposition and could allow obtaining enlarged crystals. For p-type doping with boron, the LSPM lab has proven the interest of the (113) orientation by growing p-type free-standing plates with equivalent quality to (100) orientation and, very recently, enlarged (113) p+-substrates [1]. For n-type doping with phosphorus, the GEMaC lab has shown that the (113) orientation give access to lower compensation ratio than (100) with higher electron mobility [2] at temperature above 450°C. All those results pave the way for the realization (113) diamond bipolar devices. In the framework of the ANR-LAPIN113 project [3], the LAAS lab, specialized in power devices simulation and fabrication, has defined the “ideal” PIN and NIP stacks that might ensure the target breakdown voltage. LSPM and GEMaC labs were then in charge of the synthesis to get requested PIN and NIP structures. Thanks to secondary ion mass spectrometry (SIMS), we analysed the depth-distributions of dopants over each structure. The depth profiles reveal the ability of the grower labs to achieve requested PIN and NIP structures on (113) orientation. The knowledge of the exact doping profiles will allow to simulate diode characteristics and help to understand the future experimental measurements of the diodes that will be performed on the PIN and NIP structures. References1.R. Mesples-Carrère, R. Issaoui, A. Valentin, L. Banaigs, O. Brinza, F. Bénédic, J. achard. Diamond Relat. Mater. 149 (2024), 111659. https://doi.org/10.1016/j.diamond.2024.111659 2.M.-A. Pinault-Thaury, I. Stenger, R. Gillet, S. Temgoua, E. Chikoidze, Y. Dumont, F. Jomard, T. Kociniewski, J. Barjon. Carbon 175 (2021) 254. https://doi.org/10.1016/j.carbon.2021.01.011 3.For information about the ANR-LAPIN113 project see https://anr.fr/Projet-ANR-20-CE05-003
Secondary ion mass spectrometry (SIMS) analysis of (113) PIN & NIP diamond structures
No full textInternational audienceWith tremendous physical properties, diamond is considered to be the ultimate semiconductor for high power electronics. Indeed, diamond is awaited to endure high electric fields with low leakage current. It is then a candidate of choice for high voltage and high temperature power electronics. Even if some incursions were made on the (110) orientation, the conventional crystalline orientations used for diamond are (111) and (100). Lying in between, (113) is a stable growth orientation during chemical vapor deposition and could allow obtaining enlarged crystals. For p-type doping with boron, the LSPM lab has proven the interest of the (113) orientation by growing p-type free-standing plates with equivalent quality to (100) orientation and, very recently, enlarged (113) p+-substrates [1]. For n-type doping with phosphorus, the GEMaC lab has shown that the (113) orientation give access to lower compensation ratio than (100) with higher electron mobility [2] at temperature above 450°C. All those results pave the way for the realization (113) diamond bipolar devices. In the framework of the ANR-LAPIN113 project [3], the LAAS lab, specialized in power devices simulation and fabrication, has defined the “ideal” PIN and NIP stacks that might ensure the target breakdown voltage. LSPM and GEMaC labs were then in charge of the synthesis to get requested PIN and NIP structures. Thanks to secondary ion mass spectrometry (SIMS), we analysed the depth-distributions of dopants over each structure. The depth profiles reveal the ability of the grower labs to achieve requested PIN and NIP structures on (113) orientation. The knowledge of the exact doping profiles will allow to simulate diode characteristics and help to understand the future experimental measurements of the diodes that will be performed on the PIN and NIP structures. References1.R. Mesples-Carrère, R. Issaoui, A. Valentin, L. Banaigs, O. Brinza, F. Bénédic, J. achard. Diamond Relat. Mater. 149 (2024), 111659. https://doi.org/10.1016/j.diamond.2024.111659 2.M.-A. Pinault-Thaury, I. Stenger, R. Gillet, S. Temgoua, E. Chikoidze, Y. Dumont, F. Jomard, T. Kociniewski, J. Barjon. Carbon 175 (2021) 254. https://doi.org/10.1016/j.carbon.2021.01.011 3.For information about the ANR-LAPIN113 project see https://anr.fr/Projet-ANR-20-CE05-003
Section efficace différentielle de la réaction 13C(3He, α) 12C à 1,8 Mev
No full textThe differential cross-section for the 13C (3He, α) 12C reaction for incident 3He of 1. 8 MeV energy and the excitation curve at a c. m. angle of 166° 15' have been measured. Explanation of the results requires a mixture of " pick-up " and " heavy-particle stripping " processes.La distribution angulaire des α de la réaction 13C ( 3He, α) 12C à 1,8 MeV et la courbe d'excitation à 166° 15' (c. m.) ont été mesurées. Une interprétation théorique fait intervenir un mélange de « pick-up » et de « stripping de particule α »
Spin-Orbit Effects on Exciton Complexes in Diamond
No full textInternational audienceUltrafine splittings are found in the optical absorption spectra of boron-doped diamond measured with high resolution. An analytical model of an exciton complex is developed, which permits assigning all absorption lines and sizing the interactions among the constituent charges and crystal field. We conclude that the entry of split-off holes in the acceptor-bound exciton fine structure yields two triplets separated by a spin-orbit splitting of 14.3 meV. Our findings thereby resolve a long-standing controversy [R. Sauer et al., Revised fine splitting of excitons in diamond, Phys. Rev. Lett. 84, 4172 (2000).; M. Cardona et al., Comment on “Revised fine splitting of excitons in diamond,”, Phys. Rev. Lett. 86, 3923 (2001).; R. Sauer and K. Thonke, Sauer and Thonke reply, Phys. Rev. Lett. 86, 3924 (2001).], revealing the underlying physics common in diverse semiconductors, including diamond
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