18 research outputs found
NCHLT Sesotho Phrase Chunk Annotated Corpus
No full textPhrase chunk annotated data for the NCHLT Text Resource Development: Phase II Project. The phrase chunk annotated data is a subset of the 50,000 tokens annotated during the NCHLT text resource development project and consists of a minimum of 15,000 tokens annotated as one of the six phrase types described in the protocol
NCHLT Sesotho Named Entity Annotated Corpus
No full textNamed entity annotated data from the NCHLT Text Resource Development: Phase II Project, annotated with PERSON, LOCATION, ORGANISATION and MISCELLANEOUS tags
NCHLT isiZulu Phrase Chunk Annotated Corpus
No full textPhrase chunk annotated data for the NCHLT Text Resource Development: Phase II Project. The phrase chunk annotated data is a subset of the 50,000 tokens annotated during the NCHLT text resource development project and consists of a minimum of 15,000 tokens annotated as one of the six phrase types described in the protocol
X-ray Topographic Characterization Of Epitaxially Grown Diamond Film
No full textX-ray double crystal diffraction topography of homoepitaxial diamond film grown by microwave plasma chemical vapor deposition has been conducted to study the residual stress generated by the lattice mismatch and defects at the film-substrate interface. Even though the stress-relaxation mechanism occurs by uniform film cracking, and there is no bending effect, a relatively large strain (Δd/d=8.7 × 10 -4) still remains. Based on the X-ray topographic observation, a strain distribution model with alternate unstrained and tensioned regions is suggested. © 1998 Elsevier Science S.A.72-5289292Spitsyn, B.V., Bouilov, L.L., Derjaguin, B.V., (1981) J. Crystal Growth, 52, p. 219Tarutani, M., Takai, Y., Shimizu, R., Ando, T., Kamo, M., Bando, Y., (1996) Appl. Phys. Lett., 68, p. 2070Kamo, M., Yurimoto, H., Sato, Y., (1988) Appl. Surf. Sci., 3334, pp. 553-560Kamo, M., Sato, Y., (1991) Proc. Electrochem. Soc., p. 91Sutcu, L.F., Chu, C.J., Thompson, M.S., Hauge, R.H., Margrave, J.L., D'Evelyn, M.P., (1992) J. Appl. Phys., 71, p. 5930Higa, A., Hatta, A., Ito, T., Maehama, T., Toguchi, M., Hiraki, A., (1996) Jpn. J. Appl. Phys., 35, pp. L577Kamo, M., Sato, Y., Matsumoto, S., Setaka, N., (1983) J. Crystal Growth, 62, p. 642Nakazawa, H., Kawazawa, Y., Kamo, M., Osumi, K., (1987) Thin Solid Films, 151, p. 199Matsushita, T., Hashimuze, H., (1983) Handbook on Synchroton Radiation, 1, p. 261. , E.E. Koch (Ed.), North-Holland, AmsterdamWarren, B.E., (1941) J. Appl. Phys., 12, p. 375Cullity, B.D., (1978) Elements of X-ray Diffraction, , Addison-WesleySuzuki, C.K., Tanaka, M.S., Shinohara, A.H., (1996) Proc. 1996 IEEE Int. Frequency Control Symposium, p. 78. , IEEE Catalog No. 96CH3593
TRANSIENT IR ABSORPTION SPECTROSCOPY OF THE CHARGE-TRANSFER STATE OF (-CYANOPHENYL)PENTAMETHYLDISILANE AND ITS CLUSTERS
No full text{H. Ishikawa \textit{et al{M. Sugiyam {\it et al.Author Institution: Department of Chemistry, Graduate School of Science, Tohoku; University, Sendai 980-8578, JapanWe have been investigating the intramolecular charge-transfer (ICT) process of jet-cooled phenyldisilanes by laser spectroscopic methods.}. \textit{J. Am. Chem. Soc.} \underline{\textbf{124}}, 6220 (2002).} In order to make a detailed discussion on the ICT process, it is necessary to determine an equilibrium structure of the CT state. Since a profile of the CT emission is broad and structureless, it is difficult to extract information about the structure from it. Thus, we have carried out a transient IR spectroscopy on the CT state to obtain structural information of the CT state. \par In the previous paper }, 59th Ohio State University International Symposium on Molecular Spectroscopy, WG04 (2004).}, we have reported the transient IR spectroscopy in the OH and CH stretching region of (-cyanophenyl)pentamethyldisilane(CPDS) and its clusters. The IR spectrum of the CH stretching vibration of the CT state was analyzed by the theoretical calculation and the equilibrium structure of the ICT state was determined. In addition, the IR spectrum of the ICT state of CPDS-methanol clusters in the OH stretch region indicated the existence of the intermediate CT state in the CT reaction. \par In the present study, we have carried out a transient IR spectroscopy of the CT state of CPDS-water cluster in the CN stretch region to obtain detailed information about the intermediate CT state. The frequency of the CN stretch mode () of the S state was found to be 2238 cm. The of the CT and the CT states are 2161 and 2155 cm, respectively. This rather small low-frequency shift of the of the CT state compared with that of the S state should be a clue to reveal the character of the CT state. The character of the CT state will be discussed in the paper
Electromagnetic wave absorption properties of carbon nanocoil composites in the millimeter waveband
No full textAn electron resonance investigation of molecular motion in the smectic A mesophase of a liquid crystal
No full textMultiplicity of Planar Hexasilylbenzene Dianions: Effects of Substituents and Countercations
No full textThe electronic structure of various planar hexasilylbenzene dianions was investigated by ESR
spectroscopy. Dilithium salts of a planar hexasilylbenzene (1,3,4,6,7,9-hexasila-1,1,3,3,4,4,6,6,7,7,9,9-dodecamethyltrindane) dianion (1a) show thermally accessible triplet ESR signals with the D value of 0.0963
cm-1. The D value as well as the singlet−triplet energy difference (ΔEST) in 1a is dependent on the
countercations (M+ = Li+, K+, and Rb+), indicative of the significant ion-pair interaction. The related dilithium
salts of hexasilylbenzene dianions 2a and 3a, where all CH2 bridges in 1a are replaced by O and NMe bridges,
respectively, afford similar triplet ESR signals, but they are thermally less stable than 1a, suggesting that the
thermal distortion of the ring structure occurs more easily in 2a and 3a than in 1a. The origin of the singlet
ground state of 1a (M+ = Li+) is ascribed to the ion-pair interaction with the countercations on the basis of
qualitative MO consideration
PHOTOADSORPTION AND PHOTODESORPTION OF OXYGEN ON INORGANIC SEMICONDUCTORS AS INVESTIGATED BY ESR
No full textPermittivity Of Amorphous Hydrogenated Carbon (a-c:h) Films As A Function Of Thermal Annealing
No full textNew metal-insulator-semiconductor structures with a composite insulating layer, consisting of an amorphous hydrogenated carbon (a-C:H) film and a silicon dioxide, were obtained on silicon substrates. Carbon films were deposited on SiO2 layer by radio-frequency plasma-enhanced chemical vapor deposition (rf PECVD) method from methane. The structures were annealed at the annealing temperature Ta = 250, 275, 300, and 350°C. C-V characteristics of the annealed and as-grown metal-amorphous carbon-oxide-semiconductor (MCOS) structures were examined at room temperature at a frequency of 1 MHz and compared with C-V characteristics of the classic metal-oxide-semiconductor (MOS) system. High-frequency C-V curves of both MCOS and MOS structures were used for extracting the permittivity εa-C:H of carbon films before and after thermal annealing. εa-C:H showed no variations with subsequent annealing of the structure up to Ta = 250°C, but it was observed to decrease from 5.6 to 2.8 as the film was annealed from 250°C up to 300°C with the most rapid changes occurring between 275 and 300°C. © 2001 Elsevier Science Ltd.328673678Marques, F.C., Lacerda, R.G., Odo, G.Y., Lepienski, C.M., (1998) Thin Solid Films, 332, p. 113Lacerda, R.G., Marques, F.C., (1998) Appl. Phys. Lett., 73, p. 617Gu, C., Jin, Z., Lu, X., Zou, G., Zhang, J., Fang, R., (1997) Thin Solid Films, 311, p. 124Bubenzer, A., Dischler, B., Brandt, G., Koidl, P., (1983) J. Appl. Phys., 54, p. 4590Dischler, B., Bubenzer, A., Koidl, P., (1983) Appl. Phys. Lett., 42, p. 636Bubenzer, A., Dischler, B., Nyaiesh, A., (1982) Thin Solid Films, 91, p. 81Fourches, N., Turban, G., (1994) Thin Solid Films, 240, p. 28Kamo, M., Sato, Y., Matsumoto, S., Setaka, N., (1983) J. Cryst. Growth, 62, p. 642Scharff, W., Hammer, K., Stenzel, O., Ullmann, J., Vogel, M., Frauenheim, T., Eibish, B., Muehling, I., (1989) Thin Solid Films, 171, p. 157Aisenberg, S., Chabot, R., (1971) J. Appl. Phys., 42, p. 2953Has', Z., Mitura, S., Clapa, M., Szmidt, J., (1985) Thin Solid Films, 136, p. 161Holland, L., Ojha, S.M., (1979) Thin Solid Films, 58, p. 107Angus, J.C., Hayman, C.C., (1988) Science, 241, p. 913Ravi, K.V., (1993) Mater. Sci. Engng. B, 19, p. 203Deshpandey, C.V., Bunshan, R.F., (1989) J. Vac. Sci. Technol. A, 7, p. 2294Amaratunga, G., Milne, W., Putnis, A., (1990) IEEE Electron Device Lett., 11, p. 33Amaratunga, G., Segal, D., McKenzie, D., (1991) Appl. Phys. Lett., 59, p. 69Geiss, M., Rathman, D., Ehrlich, D., Murphy, R., Lindley, W., (1987) IEEE Electron Device Lett., 8, p. 341Prins, J., (1982) Appl. Phys. Lett., 41, p. 950Tsai, W., Delfina, M., Hodul, D., Riaziat, M., Ching, L.Y., Reynolds, G., Cooper III, C.B., (1991) IEEE Electron Device Lett., 12, p. 157Nicollian, E.H., Brews, J.R., (1982) MOS (Metal Oxide Semiconductor) Physics and Technology, , Wiley, New YorkSze, S.M., (1981) Physics of Semiconductor Devices, , Wiley, New YorkChan, K.K., Silva, S.R.P., Amaratunga, G.A.J., (1992) Thin Solid Films, 212, p. 232Chan, K.K., Amaratunga, G.A.J., Wong, S.P., Veersamy, V.S., (1993) Solid-State Electron., 36, p. 345Dischler, B., Bubenzer, A., Koidl, P., (1983) Solid-State Commun., 48, p. 10
