190,708 research outputs found

    Dataset for 'Nanoscale modeling of electro-plasmonic tunable devices for modulators and metasurfaces'

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    Datapoints of the published graphs in: Riedel, C., De Groot, C., Muskens, O., and Sun, K. (2017). Nanoscale modeling of electro-plasmonic tunable devices for modulators and metasurfaces. Optics Express.</span

    The IPHAS catalogue of H alpha emission-line sources in the northern Galactic plane

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    We present a catalogue of point-source H alpha emission-line objects selected from the INT/WFC Photometric Ha Survey (IPHAS) of the northern Galactic plane. The catalogue covers the magnitude range 13 <= r' <= 19.5 and includes Northern hemisphere sources in the Galactic latitude range -5 degrees < b < 5 degrees. It is derived from similar to 1500 deg(2) worth of imaging data, which represents 80 per cent of the final IPHAS survey area. The electronic version of the catalogue will be updated once the full survey data become available. In total, the present catalogue contains 4853 point sources that exhibit strong photometric evidence for Ha emission. We have so far analysed spectra for similar to 300 of these sources, confirming more than 95 per cent of them as genuine emission-line stars. A wide range of stellar populations are represented in the catalogue, including early-type emission-line stars, active late-type stars, interacting binaries, young stellar objects and compact nebulae. The spatial distribution of catalogue objects shows overdensities near sites of recent or current star formation, as well as possible evidence for the warp of the Galactic plane. Photometrically, the incidence of Ha emission is bimodally distributed in (r' - i'). The blue peak is made up mostly of early-type emission-line stars, whereas the red peak may signal an increasing contribution from other objects, such as young/active low-mass stars. We have cross-matched our H alpha-excess catalogue against the emission-line star catalogue of Kohoutek & Wehmeyer, as well as against sources in SIMBAD. We find that fewer than 10 per cent of our sources can be matched to known objects of any type. Thus IPHAS is uncovering an order of magnitude more faint (r' > 13) emission-line objects than were previously known in the Milky Way

    Plangebied Groot Haesebroekseweg 10 te Wassenaar; archeologisch vooronderzoek:een bureau- en inventariserend veldonderzoek

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    Coordinaten:85.700/461.200 Datum einde onderzoek:januari 2008, rapportage: februari 2008 Projectmedewerkers: C. Coppens, J. van Eijk Complextype(n): NX Datering: NEO-BRONS Diversen:Coppens, C.F.H.,Plangebied Groot Haesebroekseweg 10 te Wassenaar; archeologisch vooronderzoek: een bureau- en inventariserend veldonderzoek, RAAP notitie 2566 (Weesp, 2008) In verband met voorgenomen bouwwerkzaamheden die archeologische waarden zouden kunnen verstoren, voert RAAP een vooronderzoek uit

    van der Veen (Sytze). Groot-Nederland & Groot-Colombia 1815-1830. De droom van Willem I, 2015

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    Tamse C. A. van der Veen (Sytze). Groot-Nederland & Groot-Colombia 1815-1830. De droom van Willem I, 2015. In: Revue belge de philologie et d'histoire, tome 94, fasc. 2, 2016. Histoire Médiévale, Moderne et Contemporaine – Middleleeuwse, Moderne en Hedendaagse Geschiedenis. pp. 574-575

    Quere, (Mrs) A C De Groot, [No Service Number]

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    This record was harvested from a previous catalogue system and will be withdrawn in 2025. Information in this record may be superseded or incomplete. Visit this record in UMA's new catalogue at: https://archives.library.unimelb.edu.au/nodes/view/412034Surname: QUERE. Given Name(s) or Initials: (MRS) A C DE GROOT. Military Service Number or Last Known Location: [No Registration Number]. Missing, Wounded and Prisoner of War Enquiry Card Index Number: 25521.227952 Item: [2016.0049.44298] "Quere, (Mrs) A C De Groot, [No Service Number]

    The AM Canum Venaticorum binary SDSS J173047.59+554518.5

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    The AM Canum Venaticorum (AM CVn) binaries are a rare group of hydrogen-deficient, ultrashort period, mass-transferring white dwarf binaries and are possible progenitors of Type Ia supernovae. We present time-resolved spectroscopy of the recently discovered AM CVn binary SDSS J173047.59+554518.5. The average spectrum shows strong double-peaked helium emission lines, as well as a variety of metal lines, including neon; this is the second detection of neon in an AM CVn binary, after the much brighter system GP Com. We detect no calcium in the accretion disc, a puzzling feature that has been noted in many of the longer period AM CVn binaries. We measure an orbital period, from the radial velocities of the emission lines, of 35.2 ± 0.2 min, confirming the ultracompact binary nature of the system. The emission lines seen in SDSS J1730 are very narrow, although double-peaked, implying a low-inclination, face-on accretion disc; using the measured velocities of the line peaks, we estimate i ≤ 11°. This low inclination makes SDSS J1730 an excellent system for the identification of emission lines

    Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance

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    Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations. This paper investigates the effect of the asymmetric source and drain geometries of surround-gate vertical MOSFETs on the drain leakage currents in the OFF-state region of operation. Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for transistors connected in the drain-on-top and drain-on-bottom configurations. Asymmetric leakage currents are seen when the source and drain terminals are interchanged, with the GIDL being higher in the drain-on-bottom configuration and the body leakage being higher in the drain-on-top configuration. Band-to-band tunneling is identified as the dominant leakage mechanism for both the GIDL and body leakage from electrical measurements at temperatures ranging from ?50 to 200?C. The asymmetric body leakage is explained by a difference in body doping concentration at the top and bottom drain–body junctions due to the use of a p-well ion implantation. The asymmetric GIDL is explained by the difference in gate oxide thickness on the vertical (110) pillar sidewalls and the horizontal (100) wafer surface
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