196,335 research outputs found
The Potential of One-Sided Traditional Windcatchers for Outdoor Use as a Sustainable Urban Feature
No full textUrbanization is exacerbating heat islands, causing adverse effects on life and health, including thermal stress. This highlights the importance of using natural resources for thermal regulation, particularly through historically employed passive strategies. Windcatchers have traditionally been installed in arid and hot areas to provide thermal comfort (TC), especially in indoor spaces. However, despite significant internal shape development, a notable gap remains in exploring their outdoor applications. This paper investigates a new integrated design for a one-sided windcatcher, which captures wind through a single inlet by combining traditional principles with modern sustainable features, such as green façade, to enhance outdoor urban space. The design concept was developed in two stages: the “Initial Design Step” and the “Geometrical Assessment”, utilizing iterative computational fluid dynamics (CFD) simulations. This study aimed to evaluate the potential of windcatchers for outdoor applications using an upstream, curved shaft and guide vanes, tested at wind velocities of 1.5 m/s for a 5 m high windcatcher and 4 m/s for a 10 m high windcatcher. The study revealed a meaningful relationship among the parameters, as they influence each other. Achieving optimal performance requires careful control of the parameters, such as balancing the inner wall curvature and inlet size to optimize airflow dynamics. In urban contexts, turbulence and morphology affect airflow but can be mitigated through regionally tailored windcatcher designs. Nevertheless, several critical research gaps remain, highlighting the windcatcher’s potential for improvement and the need for further investigation in future studies
Kinetic model of SiGe selective epitaxial growth using RPCVD technique
No full textRecently, selective epitaxial growth (SEG) of B-doped SiGe layershas been used in recessed source/drain (S/D) of pMOSFETs. Theuniaxial induced strain enhances the carrier mobility in the channel.In this work, a detailed model for SEG of SiGe has been developed topredict the growth rate and Ge content of layers indichlorosilane(DCS)-based epitaxy using a reduced-pressure CVDreactor. The model considers each gas precursor contributions fromthe gas-phase and the surface.The gas flow and temperature distribution were simulated in the CVDreactor and the results were exerted as input parameters for Maxwellenergy distribution. The diffusion of molecules from the gasboundaries was calculated by Fick’s law and Langmuir isothermtheory (in non-equilibrium case) was applied to analyze the surface.The pattern dependency of the selective growth was also modeledthrough an interaction theory between different subdivisions of thechips. Overall, a good agreement between the kinetic model and theexperimental data were obtained.Original Publication:M. Kolahdouz, L. Maresca, R. Ghandi, Ali Khatibi and H. Radamson, Kinetic model of SiGe selective epitaxial growth using RPCVD technique, 2010, ECS Transactions, (33), 6, 581-593.http://dx.doi.org/10.1149/1.3487589Copyright: Electrochemical Societ
Supplemental material for Upregulated SK2 Expression and Impaired CaMKII Phosphorylation Are Shared Synaptic Defects Between 16p11.2del and 129S:<i>Δdisc1</i> Mutant Mice
No full textSupplemental Material for Upregulated SK2 Expression and Impaired CaMKII Phosphorylation Are Shared Synaptic Defects Between 16p11.2del and 129S:Δdisc1 Mutant Mice by Razia Sultana, Tanya Ghandi, Alexandra M. Davila, Charles C. Lee and Olalekan M. Ogundele in ASN Neuro</p
Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide
No full textEpitaxial Ti3SiC2 (0001) thin film contacts were grown on doped 4H-SiC (0001) using magnetron sputtering in an ultra high vacuum system. The specific contact resistance was investigated using linear transmission line measurements. Rapid thermal annealing at 950 degrees C for 1 min of as-deposited films yielded ohmic contacts to n-type SiC with contact resistances in the order of 10(-4) Omega cm(2). Transmission electron microscopy shows that the interface between Ti3SiC2 and n-type SiC is atomically sharp with evidence of interfacial ordering after annealing.Original Publication: Kristina Buchholt, R Ghandi, M Domeij, C-M Zetterling, Jun Lu, Per Eklund, Lars Hultman and Anita Lloyd Spetz, Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide, 2011, APPLIED PHYSICS LETTERS, (98), 4, 042108. http://dx.doi.org/10.1063/1.3549198 Copyright: American Institute of Physics http://www.aip.org/</p
Dr. Duane M. Jackson, Morehouse College, July 2011
No full textThis video is a conversation with Dr. Duane M. Jackson. Dr. Jackson talks about his paper, "Recall and the Serial Position Effect: The Role of Primacy and Recency on Accounting Students' Performance." Jackie Daniel, AUC Woodruff Library, is the interviewer
"Reflections on the subject of Emigration from Europe with a view to Settlement in the United States" By M. Carey.
No full text"Reflections on the subject of Emigration from Europe with a view to Settlement in the United States: containing bried sketches of the moral and political character of those states.
By M. Carey, member of the American philosophical, and of the American Antiquarian Society, and author of The Olive Branch, Cindiciae Hibernicae, essays on banking, on political economy, and on internal improvement.
To which are now added the English editor's comments on the subject; together with Important Advice to Emigrants, and Cautions Against Impositions Practiced in the Outports
Dispelling the Myths Behind First-author Citation Counts
No full textWe conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
Dr. Glendon Swarthout
No full textHosted by Roger M. Busfield, MSU Assistant Professor of Speech and Theater, Meet the Author is designed to introduce a general audience to a contemporary author and their work through in-depth interviews. This episode features a conversation between Dr. Glendon Swarthout, prolific author and English professor at MSU, and assistant professors Sam S. Baskett and Theodore B. Strandness
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