127 research outputs found
Les poètes français de la Renaissance et Pétrarque
No full textRécension : (1) G. de Sauza, Réforme, Humanisme, Renaissance, LXI, 2005 : 163-166 ; (2) G. Banderier, Renaissance Quarterly, 2005 : 1347-1348 ; (3) J.-E. Girot , Bibliothèque d’Humanisme et Renaissance, LXVIII, 2006 : 433-437 ; (4) E. J. Campion, French Review, LXXX, 2, 2006 : 449-450 ; (5) A. Amatuzzi, Studi Francesi, CXII, 2, 2006 : 279-281 ; (6) J. H. Dahlinger s.j., The Sixteenth Century Journal, XXXVIII, 2007 : 518-520 ; (7) J. Papy, Bibliothèque d’Humanisme et Renaissance, LXIX, 2007 : 810-813.International audienc
Les poètes français de la Renaissance et Pétrarque
No full textRécension : (1) G. de Sauza, Réforme, Humanisme, Renaissance, LXI, 2005 : 163-166 ; (2) G. Banderier, Renaissance Quarterly, 2005 : 1347-1348 ; (3) J.-E. Girot , Bibliothèque d’Humanisme et Renaissance, LXVIII, 2006 : 433-437 ; (4) E. J. Campion, French Review, LXXX, 2, 2006 : 449-450 ; (5) A. Amatuzzi, Studi Francesi, CXII, 2, 2006 : 279-281 ; (6) J. H. Dahlinger s.j., The Sixteenth Century Journal, XXXVIII, 2007 : 518-520 ; (7) J. Papy, Bibliothèque d’Humanisme et Renaissance, LXIX, 2007 : 810-813.International audienc
Optimized Laser Doped Back Surface Field for IBC Solar Cells
No full textAbstractWe present the optimization of the laser doped back surface field (BSF) for interdigitated back contact solar cells (IBC). The POCl3 flow limits the phosphorus concentration in the phosphorus silicate glass (PSG) during furnace diffusion, hence limits the sheet resistance when used as dopant source for laser doping. The saturation current densities of quasi steady state photo conductance (QSSPC) samples correlate with the sheet resistance dependent Auger contribution simulated with EDNA 2. Utilizing the measured saturation current density and contact resistance for various sheet resistances, we optimize the BSF doping for the recently presented 23.24% efficient laser processed IBC solar cell by numerical 3D solar cell simulation
Properties of CsI(Tl) Crystals and their Optimization for Calorimetry of High Energy Photons
No full textA photomultiplier setup for precise relative CsI(Tl) crystal light yield and uniformity measurements is described. It is used for wrapping material studies to optimize the uniformity and the yield of the light output of 36 cm long crystals. The uniformity is an important property in high energy photon calorimetry. Results of an optimization of photodiode coupling to crystals, the influence of temperature and radiation damage to light and photoelectron yield are also presented. Work supported by BMBF under contract No. 06 DD 558 I y Corresponding author. E-mail: [email protected], Fax. +49 1 Introduction Although Thallium doped CsI crystals are widely used in high energy physics detectors [1, 2], new precision experiments at the B-meson factories presently under construction [3, 4] rely on CsI(Tl) calorimeters with improved energy resolution, electronic noise, and crystal radiation hardness. The energy resolution at low energies is influenced by the (temperature depen..
Properties of CsI(Tl) crystals and their optimization for calorimetry of high energy photons
No full textReviews : DAHLINGER, CHAS. W. The New Agrarianism. Pp. v, 247. Price, $1.00. New York: G. P. Putnam's Sons, 1913
No full textn/
Formation of Crystalline Silicon Tunnel Junctions for Perovskite on Silicon Tandem Solar Cells
No full textInternational audienceWe present the current status of our method to create tunnel junctions (TJs) over acrystalline silicon sub cell, using Gas Immersion Laser Doping (GILD) [1].A two-step laser process is used to form a heavily doped n++/p++ interface on a silicon wafer. Westart with a heavily boron doped p++ layer which has been prepared on a p-type wafer using astandard diffusion technique. We then alter the p++ boron dopant profile by rastering a pulsed laserover the p++ doped wafer’s surface. p++ boron dopant pileup [2] occurs, decreasing the dopantconcentration at the surface and increasing the concentration at a defined depth below the surface.GILD is then used for n++ phosphorus doping. In short, the wafer is immersed in an argonatmosphere saturated with POCl3. Then a pulsed laser rasters the surface, sequentially melting spotsto a depth of c.a. 100 to 500 nm for less than c.a. 100 ns before recrystallization occurs. Whilst thesilicon is fused, phosphorus present on the surface rapidly diffuses throughout the melt, but not intothe sold phase.Secondary ion mass spectrometry (SIMS) depth profiling was used to determine the sampleelemental composition. The active dopant distribution was characterized by electrochemicalcapacitance-voltage (ECV). Boron accumulates at the maximum melt depth (around the 200 nm to400 nm range) due to pile-up. Phosphorous depth profiles are flat with a concentration within the1019 -1020 cm-3 range, followed by an abrupt “shoulder”.Electrical tunneling characterisitics of the doped layers were assessed by forming mesas usingreactive ion etching as developed by Fave et al. [3]. Several hundred mesas were prepared and theirelectrical characterisitics studied as a function of laser processing conditions.References:[1] G. Kerrien, T. Sarnet, D. Débarre, J. Boulmer, M. Hernandez, C. Laviron, M.N. Semeria,Thin Solid Films 453–454 (2004) 106–109.[2] P.C. Lill, M. Dahlinger, J.R. Köhler, Materials 10 (2017) 189.[3] X. Li, A. Fave, M. Lemiti, Semiconductor Science and Technology 36 (2021) 12500
Formation of Crystalline Silicon Tunnel Junctions for Perovskite on Silicon Tandem Solar Cells
No full textInternational audienceWe present the current status of our method to create tunnel junctions (TJs) over acrystalline silicon sub cell, using Gas Immersion Laser Doping (GILD) [1].A two-step laser process is used to form a heavily doped n++/p++ interface on a silicon wafer. Westart with a heavily boron doped p++ layer which has been prepared on a p-type wafer using astandard diffusion technique. We then alter the p++ boron dopant profile by rastering a pulsed laserover the p++ doped wafer’s surface. p++ boron dopant pileup [2] occurs, decreasing the dopantconcentration at the surface and increasing the concentration at a defined depth below the surface.GILD is then used for n++ phosphorus doping. In short, the wafer is immersed in an argonatmosphere saturated with POCl3. Then a pulsed laser rasters the surface, sequentially melting spotsto a depth of c.a. 100 to 500 nm for less than c.a. 100 ns before recrystallization occurs. Whilst thesilicon is fused, phosphorus present on the surface rapidly diffuses throughout the melt, but not intothe sold phase.Secondary ion mass spectrometry (SIMS) depth profiling was used to determine the sampleelemental composition. The active dopant distribution was characterized by electrochemicalcapacitance-voltage (ECV). Boron accumulates at the maximum melt depth (around the 200 nm to400 nm range) due to pile-up. Phosphorous depth profiles are flat with a concentration within the1019 -1020 cm-3 range, followed by an abrupt “shoulder”.Electrical tunneling characterisitics of the doped layers were assessed by forming mesas usingreactive ion etching as developed by Fave et al. [3]. Several hundred mesas were prepared and theirelectrical characterisitics studied as a function of laser processing conditions.References:[1] G. Kerrien, T. Sarnet, D. Débarre, J. Boulmer, M. Hernandez, C. Laviron, M.N. Semeria,Thin Solid Films 453–454 (2004) 106–109.[2] P.C. Lill, M. Dahlinger, J.R. Köhler, Materials 10 (2017) 189.[3] X. Li, A. Fave, M. Lemiti, Semiconductor Science and Technology 36 (2021) 12500
The BaBar detector
No full textThis is the pre-print version of the Article. The official published version can be accessed from the link below. Copyright @ 2002 Elsevier.BABAR, the detector for the SLAC PEP-II asymmetric e+e− B Factory operating at the (4S) resonance, was designed to allow comprehensive studies of CP-violation in B-meson decays. Charged particle tracks are measured in a multi-layer silicon vertex tracker surrounded by a cylindrical wire drift chamber. Electromagnetic showers from electrons and photons are detected in an array of CsI crystals located just inside the solenoidal coil of a superconducting magnet. Muons and neutral hadrons are identified by arrays of resistive plate chambers inserted into gaps in the steel flux return of the magnet. Charged hadrons are identified by dE/dx measurements in the tracking detectors and in a ring-imaging Cherenkov detector surrounding the drift chamber. The trigger, data acquisition and data-monitoring systems , VME- and network-based, are controlled by custom-designed online software. Details of the layout and performance of the detector components and their associated electronics and software are presented.This work has been supported by the US Department of Energy and the National Science
Foundation, the Natural Sciences and Engineering Research Council (Canada), the Institute of High Energy Physics (P.R. China), le Commisariat a l’Energie Atomique and Institut National de Physique Nucl´eaire et de Physique des Particules (France), Bundesministerium fur Bildung und Forschung (Germany), Istituto Nazionale di Fisica Nucleare (Italy), the Research Council of
Norway, the Ministry of Science and Technology of the Russian Federation, and the Particle Physics and Astronomy Research Council (United Kingdom). In addition, individuals have received support from the Swiss National Foundation, the A.P. Sloan Foundation, the Research Corporation, and the Alexander von Humboldt Foundation
- …
