6 research outputs found
Compact modeling of n-side interstrip resistance in p-stop and p-spray isolated double-sided silicon microstrip detectors
No full textSimulation and test of 3D silicon radiation detectors
No full textThe work presented here is the result of the collaborative effort between the University of Glasgow, ITC-IRST (Trento) and IMB-CNM (Barcelona) in the framework of the CERN-RD50 Collaboration to produce 3D silicon radiation detectors and study their performance.This paper reports on two sets of 3D devices. IRST and CNM have fabricated a set of single-type column 3D detectors, which have columnar electrodes of the same doping type and an ohmic contact located at the backplane. Simulations of the device behaviour and electrical test results are presented. In particular, current–voltage, capacitance–voltage and charge collection efficiency measurements are reported. Other types of structures called double-sided 3D detectors are currently being fabricated at CNM. In these detectors the sets of n and p columns are made on opposite sides of the device. Electrical and technological simulations and first processing results are presented
Thin Pixel Development for the Layer0 of the SuperB Silicon Vertex Tracker
No full textThe high luminosity SuperB asymmetric e(+) e(-) collider, to be built near the INFN National Frascati Laboratory in Italy, has been designed to deliver a luminosity greater than 10(36) cm(-2) s(-1) with moderate beam currents and a reduced center of mass boost with respect to earlier B-Factories. An improved vertex resolution is required for precise time-dependent measurements and the SuperB Silicon Vertex Tracker will be equipped with an innermost layer of small radius (about 1.5 cm), resolution of 10-15 mu m in both coordinates, low material budget (<1% X0), and able to withstand a background rate of several tens of MHz/cm(2). The ambitious goal of designing a thin pixel device with these stringent requirements is being pursued with specific R&D programs on different technologies: hybrid pixels, CMOS MAPS and pixel sensors developed with vertical integration technology. The latest results on the various pixel options for the SuperB SVT will be presented. (C) 2010 Elsevier B.V. All rights reserved. RI Forti, Francesco/H-3035-2011; Neri, Nicola/G-3991-2012; Gabrielli, Alessandro/H-4931-2012; Villa, Mauro/C-9883-2009; Dalla Betta, Gian-Franco/I-1783-201
Deaf students’ access to higher education in Greece
No full textIn 1983 the Greek Parliament approved a bill that enabled deaf graduates of high schools (amongst others) to be admitted to institutions of higher education without having to take entrance examinations. Until very recently the education of deaf children in Greece has been based on the exclusive use of the oral approach (i.e. the use of spoken Greek as the language of instruction and excluding the use of Greek Sign Language). The educational attainments of Greek deaf children on completing their school education have been poor compared to those of hearing children and, it has been argued (Lampropoulou 1994), has resulted in the situation that many Deaf people are poorly prepared for participation in society. In light of this situation I investigated the experiences of Deaf students who have availed of the opportunity provided by the above law to enter higher education. The subjects of the study are deaf people whose first or preferred language is Greek Sign Language (GSL) who, hereafter, are referred to as Deaf (spelt with an upper case 'D') people. The samples of Deaf students were made up of students who had graduated, interrupted their studies, were studying or were about to commence their studies at a Greek institution of higher education. In addition I obtained the views of schoolteachers of deaf children, higher education lecturers and representatives of the Greek Federation of the Deaf Brief overviews of the Greek education system and different models of d/Deafness are provided as way of background to the study. The data obtained from interviews with the above groups are presented and discussed, and include proposals as to how access for Deaf students to Greek higher education can be improved. The author hopes that this study will be seen as a contribution to the education of Deaf people in Greece. It provides suggestions for consideration by Greek Deaf and hearing people interested in the education of Deaf people, as well as public and private organisations, as to how improvements in Deaf people's education in Greece can be achieved
Production and Integration of the ATLAS Insertable B-Layer
No full textInternational audienceDuring the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realised following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. This paper reports on the IBL construction and integration prior to its operation in the ATLAS detector
