1,720,987 research outputs found
Modeling Turn-off Voltage rise in SOI LIGBT
No full textThe behavior of the drain voltage rise of the Lateral IGBT during inductive turn-off is studied in detail. Numerical simulations show that, if compared with the well known vertical IGBT, the Lateral IGBT presents a differences in the on-state stored charge and in the growth of the depleted region that result in a different drain voltage rise. In this paper a complete model for the voltage rise is devised through an accurate calculation of the equivalent output capacitance. The model is in excellent agreement with two-dimensional simulations. Further, the paper shows that previously proposed models, which targeted the vertical IGBT, are not adequate for the description of the turn-off voltage rise in the Lateral IGBT
Modeling Voltage Derivative During Inductive Turnoff in Thin SOI LIGBT
No full textThe lateral insulated gate bipolar transistor (IGBT)
behavior differs in many aspects from the well-studied vertical
IGBT. In this paper, the voltage derivative during inductive turnoff
for a silicon-on-insulator (SOI) lateral IGBT (LIGBT) is analyzed
in detail. A complete model which accounts for the voltage rise is
implemented through an accurate calculation of the equivalent
output capacitance. The model is in excellent agreement with
two-dimensional simulations and experimental results across a
wide range of conditions. Further, the paper shows that previously
proposed models, which targeted the vertical IGBT, are not adequate
for the description of the turnoff voltage rise in the LIGBT
ACCURATE PHYSICAL MODEL FOR THE LATERAL IGBT IN SILICON ON INSULATOR TECHNOLOGY
No full textMany vertical IGBT models are currently available. They have also been implemented in commercial simulators and describe device behavior both in steady-state and transient. However, no reliable device models have been proposed for the Lateral IGBT that is widely used in the field of smart power integrated circuits. In this paper a complete physical model for the Lateral IGBT fabricated in Silicon On Insulator technology is developed. The model is implemented in Pspice circuit simulator. Model results are compared against finite element device simulation. A comparison with the most common vertical IGBT Pspice model shows that vertical IGBT models are not able to correctly predict lateral IGBT behavior
An analytical model for the lateral insulated gate bipolar transistor(LIGBT) on thin SOI
No full textWhile there are several analytical models dedicated
to vertical insulated gate bipolar transistors (IGBTs) there is virtually
no reliable model for lateral IGBTs (LIGBTs). LIGBTs are
increasingly popular in smart power and power integrated circuits,
especially in those applications where high voltage (e.g., 600 V) and
high current capability (e.g., 30 A/cm2) are required. In this paper,
we report for the first time a complete analytical model for the
LIGBT based on semiconductor physics with very few fitting parameters.
The model is implemented in the widely available circuit
simulator PSpice. The model consistently describes the current and
voltage waveforms for all loading conditions. The model is assessed
against finite element device simulations and experimental results
Going Beyond Counting First Authors in Author Co-citation Analysis
Get PDFThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
Get PDF“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Get PDFWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
A compact model for thin SOI LIGBTs: description, experimental verification and system application
No full textA complete physical model for the Lateral IGBT in Thin Silicon On Insulator technology is presented for the first time. The model is oriented to circuit simulators and is implemented in Pspice. Model results are compared against experimental results and Medici numerical simulations. Numerical convergence performance of the model is verified through the simulation of a half bridge circuit and a complete flyback switch mode power supply
Complete Isothermal Model for the Lateral Insulated Gate Bipolar Transistor on SOI technology
No full textWhile there are several analytical models dedicated to the vertical IGBT there is virtually no reliable model for the Lateral IGBT (LIGBT). LIGBTs are increasingly popular in smart power and power integrated circuits, especially in those applications where high voltage and high current capabilities are required. Silicon on insulator (SOI) could be the future technology for power devices and integrated circuits due to its much improved device isolation. In this work we report for the first time a complete analytical model for the SOI LIGBT based on semiconductor physics with very few fitting parameters. The model is assessed against finite element device simulations and experimental results
- …
