540 research outputs found
Characteristics of lifestyle and attitudes toward motherhood of surrogate mothers in Ukraine
No full textСтаття О.Л. Луценко, В.Р. Цокоти «Особливості способу життя та ставлення до материнства у сурогатних матерів в Україні» націлена на вивчення суб’єктивного ставлення майбутніх сурогатних матерів до вагітності та сурогатного материнства. До завдань дослідження відносилося виявлення особливостей їх соціальної ситуації, способу життя, вольових, моральних, емоційних і мотиваційних якостей, що можуть частково обумовлювати рішення стати сурогатною матерю. 28 жінок, включених у програму сурогатного материнства та три групи порівняння з 20-ма особами в кожній (жінки без дітей, з 1-2 дітьми та багатодітні) відповіли на авторське напівструктуроване інтерв’ю з 25 питань. Виявилося, що майбутні сурогатні матері відрізняються від груп порівняння меншим рівнем освіти, більш частою відсутністю чоловіка або розлученням в сімейній ситуації, недостатньо задовільними житловими умовами, браком матеріального забезпечення. Вони менш ранимі, не схильні до тривалих негативних емоційних станів, мають менше страхів, пов’язаних з вагітністю та пологами, набагато більш позитивно ставляться до сурогатного материнства.The article of O. Lutsenko, V. Tsokota “The characteristics of lifestyle and attitudes to motherhood of surrogate mothers in Ukraine” is aimed to study surrogate mothers’ attitudes to pregnancy and surrogate motherhood. The objectives of the study were to identify the characteristics of their social situation, lifestyle, volitional, moral, emotional and motivational qualities that can partially determine the decision to become a surrogate mother. 28 women included in the program of surrogate motherhood and three comparison groups of 20 people (the women without children, with 1-2 children and with many children) were interviewed using a semi-structured authors’ interview of the 25 questions. It was found that the prospective surrogate mothers differ from comparison groups by less education, more frequent absence of husband or divorce in the family situation, not entirely satisfactory living conditions, lack of material support. They are less vulnerable, are not prone to long-term negative emotional states, have fewer fears associated with pregnancy and childbirth, and are much more positive about the surrogacy
Characteristics of lifestyle and attitudes toward motherhood of surrogate mothers in Ukraine
No full textСтаття О.Л. Луценко, В.Р. Цокоти «Особливості способу життя та ставлення до материнства у сурогатних матерів в Україні» націлена на вивчення суб’єктивного ставлення майбутніх сурогатних матерів до вагітності та сурогатного материнства. До завдань дослідження відносилося виявлення особливостей їх соціальної ситуації, способу життя, вольових, моральних, емоційних і мотиваційних якостей, що можуть частково обумовлювати рішення стати сурогатною матерю. 28 жінок, включених у програму сурогатного материнства та три групи порівняння з 20-ма особами в кожній (жінки без дітей, з 1-2 дітьми та багатодітні) відповіли на авторське напівструктуроване інтерв’ю з 25 питань. Виявилося, що майбутні сурогатні матері відрізняються від груп порівняння меншим рівнем освіти, більш частою відсутністю чоловіка або розлученням в сімейній ситуації, недостатньо задовільними житловими умовами, браком матеріального забезпечення. Вони менш ранимі, не схильні до тривалих негативних емоційних станів, мають менше страхів, пов’язаних з вагітністю та пологами, набагато більш позитивно ставляться до сурогатного материнства.The article of O. Lutsenko, V. Tsokota “The characteristics of lifestyle and attitudes to motherhood of surrogate mothers in Ukraine” is aimed to study surrogate mothers’ attitudes to pregnancy and surrogate motherhood. The objectives of the study were to identify the characteristics of their social situation, lifestyle, volitional, moral, emotional and motivational qualities that can partially determine the decision to become a surrogate mother. 28 women included in the program of surrogate motherhood and three comparison groups of 20 people (the women without children, with 1-2 children and with many children) were interviewed using a semi-structured authors’ interview of the 25 questions. It was found that the prospective surrogate mothers differ from comparison groups by less education, more frequent absence of husband or divorce in the family situation, not entirely satisfactory living conditions, lack of material support. They are less vulnerable, are not prone to long-term negative emotional states, have fewer fears associated with pregnancy and childbirth, and are much more positive about the surrogacy
Semiconductors V. 38, I. 09
No full textSemiconductors -- September 2004
Volume 38, Issue 9, pp. 987-1114
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Certain Features of Ga Diffusion in ZnS Powders
Yu. Yu. Bacherikov, I. P. Vorona, S. V. Optasyuk, V. E. Rodionov, and A. A. Stadnik
pp. 987-991 Full Text: PDF (63 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Impact-Ionization Autosolitons in Compensated Silicon
A. M. Musaev
pp. 992-995 Full Text: PDF (50 kB)
Effect of Vacuum Annealing on the Edge Luminescence of Undoped Zinc Selenide
V. P. Makhnii, A. M. Sletov, and I. V. Tkachenko
pp. 996-997 Full Text: PDF (39 kB)
Low-Frequency Noise in Gallium Nitride Epitaxial Layers with Different Degrees of Order of Mosaic Structure
N. M. Shmidt, M. E. Levinshtein, W. V. Lundin, A. I. Besyul'kin, P. S. Kop'ev, S. L. Rumyantsev, N. Pala, and M. S. Shur
pp. 998-1000 Full Text: PDF (49 kB)
Elementary Blue-Emission Bands in the Luminescence Spectrum of Undoped Gallium Nitride Films
A. N. Gruzintsev, A. N. Red'kin, V. I. Tatsii, C. Barthou, and P. Benalloul
pp. 1001-1004 Full Text: PDF (55 kB)
Determination of the Minority-Carrier Lifetime in Silicon Ingots by Photoconductivity Relaxation Measured at Microwave Frequencies
P. A. Borodovskii, A. F. Buldygin, and A. S. Tokarev
pp. 1005-1011 Full Text: PDF (101 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Interfaces and Roughness in a Multilayer Silicon Structure
A. I. Belyaeva, A. A. Galuza, and S. N. Kolomiets
pp. 1012-1017 Full Text: PDF (246 kB)
Photosensitive Structures Based on Single-Crystal Silicon and Phthalocyanine CuPc: Fabrication and Properties
G. A. Il'chuk, N. V. Klimova, O. I. Kon'kov, S. E. Nikitin, Yu. A. Nikolaev, L. I. Rudaya, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, V. V. Shamanin, and T. A. Yurre
pp. 1018-1022 Full Text: PDF (80 kB)
Interaction of C60 Molecules with the (100)W Surface: Adsorption, Initial Stages of Film Growth, and Thermal Transformation of the Adsorption Layer
N. R. Gall', E. V. Rut'kov, and A. Ya. Tontegode
pp. 1023-1029 Full Text: PDF (96 kB)
Radiative Recombination in a Silicon MOS Tunnel Structure
N. Asli, M. I. Vexler, I. V. Grekhov, P. Seegebrecht, S. E. Tyaginov, and A. F. Shulekin
pp. 1030-1035 Full Text: PDF (97 kB)
Potential Barrier Formation at a Metal–Semiconductor Contact Using Selective Removal of Atoms
B. A. Gurovich, B. A. Aronzon, V. V. Ryl'kov, E. D. Ol'shanskii, E. A. Kuleshova, D. I. Dolgii, D. Yu. Kovalev, and V. I. Filippov
pp. 1036-1040 Full Text: PDF (102 kB)
Special Features of Radiation-Defect Annealing in Silicon p–n Structures: The Role of Fe Impurity Atoms
B. A. Komarov
pp. 1041-1046 Full Text: PDF (80 kB)
LOW-DIMENSIONAL SYSTEMS
Electrical Properties of Metal–Semiconductor Nanocontacts
N. V. Vostokov and V. I. Shashkin
pp. 1047-1052 Full Text: PDF (71 kB)
Effect of Electron–Electron and Electron–Hole Collisions on Intraband Population Inversion of Electrons in Stepped Quantum Wells
V. L. Zerova, G. G. Zegrya, and L. E. Vorob'ev
pp. 1053-1060 Full Text: PDF (107 kB)
Calculation of Current–Voltage Characteristics of Gallium Arsenide Symmetric Double-Barrier Resonance Tunneling Structures with Allowance for the Destruction of Electron-Wave Coherence in Quantum Wells
D. V. Pozdnyakov, V. M. Borzdov, and F. F. Komarov
pp. 1061-1064 Full Text: PDF (54 kB)
Relaxation of Charge Carriers in Quantum Dots with the Involvement of Plasmon–Phonon Modes
A. V. Fedorov and A. V. Baranov
pp. 1065-1073 Full Text: PDF (112 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Influence of Supramolecular Ordering on Photophysical Properties of Polyamidines
E. L. Aleksandrova, M. E. Kompan, M. M. Dudkina, A. V. Tenkovtsev, and E. I. Terukov
pp. 1074-1077 Full Text: PDF (61 kB)
Current Instability with an S-Shaped I–V Characteristic in Films of a Metal–Polymer Complex of Polyamide Acid with Tb+2
É. A. Lebedev, M. Ya. Goikhman, K. D. Tséndin, I. V. Podeshvo, E. I. Terukov, and V. V. Kudryavtsev
pp. 1078-1080 Full Text: PDF (41 kB)
Carrier Drift Mobility in Porous Silicon Carbide
L. P. Kazakova, M. G. Mynbaeva, and K. D. Mynbaev
pp. 1081-1083 Full Text: PDF (39 kB)
Quartz Microtubes Based on Macroporous Silicon
E. V. Astrova, T. N. Borovinskaya, T. S. Perova, and M. V. Zamoryanskaya
pp. 1084-1087 Full Text: PDF (348 kB)
Technique for Patterning Macroporous Silicon and the Fabrication of Bars of 2D Photonic Crystals with Vertical Walls
E. V. Astrova, T. N. Borovinskaya, V. A. Tolmachev, and T. S. Perova
pp. 1088-1091 Full Text: PDF (376 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
A Study of Deep Levels in CdHgTe by Analyzing the Tunneling Current of Photodiodes
V. I. Turinov
pp. 1092-1098 Full Text: PDF (106 kB)
Lasing in Cd(Zn)Se/ZnMgSSe Heterostructures Pumped by Nitrogen and InGaN/GaN Lasers
I. V. Sedova, S. V. Sorokin, A. A. Toropov, V. A. Kaigorodov, S. V. Ivanov, P. S. Kop'ev, E. V. Lutsenko, V. N. Pavlovskii, V. Z. Zubelevich, A. L. Gurskii, G. P. Yablonskii, Y. Dikme, H. Kalisch, A. Szymakowski, R. H. Jansen, B. Schineller, and M. Heuken
pp. 1099-1104 Full Text: PDF (90 kB)
Characteristics of Planar Diodes Based on Heavily Doped GaAs/AlAs Superlattices in the Terahertz Frequency Region
D. G. Pavel'ev, N. V. Demarina, Yu. I. Koshurinov, A. P. Vasil'ev, E. S. Semenova, A. E. Zhukov, and V. M. Ustinov
pp. 1105-1110 Full Text: PDF (89 kB)
Behavior of Graded-Gap Detectors of Ionizing Radiation under Irradiation with Alpha Particles
L. Dapkus, K. Pozela, J. Pozela, A. Silenas, V. Juciene, and V. Jasutis
pp. 1111-1114 Full Text: PDF (59 kB)Archived web conten
Technical Physics V. 50, I. 11
No full textTechnical Physics -- November 2005
Volume 50, Issue 11, pp. 1391-1534
THEORETICAL AND MATHEMATICAL PHYSICS
System of Two Dielectric Cylinders Involving Charge Sources: I. Calculation of the Electric Field
Yu. P. Emets
pp. 1391-1401 Full Text: PDF (129 kB)
System of Two Dielectric Cylinders Involving Charge Sources: II. Calculation of Forces
Yu. P. Emets
pp. 1402-1407 Full Text: PDF (75 kB)
Stochastic Theory of Ultrathin Lubricant Film Melting in the Stick-Slip Regime
A. V. Khomenko and I. A. Lyashenko
pp. 1408-1416 Full Text: PDF (114 kB)
GASES AND LIQUIDS
Calculation of the Velocity of a Molecular Gas Slipping over a Sphere with Regard to Accommodation Coefficients
A. V. Latyshev, V. N. Popov, and A. A. Yushkanov
pp. 1417-1422 Full Text: PDF (77 kB)
Analysis of an Arc-Formed Gas-Plasma Jet in the Arc Method of Fullerene Production
N. I. Alekseev and G. A. Dyuzhev
pp. 1423-1430 Full Text: PDF (98 kB)
On One Method of Simultaneously Measuring the Mass Flow Rate and Density of a Liquid
E. V. Mayorov and V. A. Onishchuk[dagger]
pp. 1431-1434 Full Text: PDF (78 kB)
Nonlinear Periodic Waves on the Charged Surface of a Finite-Thickness Ideal Liquid Layer
S. A. Kurochkina and A. I. Grigor'ev
pp. 1435-1443 Full Text: PDF (210 kB)
Effect of Small Methane and Monosilane Additives on Clustering in Pulsed Supersonic Argon Jets
A. E. Zarvin, V. Zh. Madirbaev, N. G. Korobeishchikov, G. G. Gartvich, and R. G. Sharafutdinov
pp. 1444-1450 Full Text: PDF (108 kB)
GAS DISCHARGES, PLASMA
Calculation of the Parameters of a High-Current Reflective Discharge with a Hot Cathode
L. A. Zjulkova, A. V. Kozyrev, and D. I. Proskurovsky
pp. 1451-1457 Full Text: PDF (83 kB)
SOLIDS
X-ray Diffraction Analysis of C60 Fullerene Powder and Fullerene Soot
B. M. Ginzburg, Sh. Tuichiev, S. Kh. Tabarov, A. A. Shepelevskii, and L. A. Shibaev
pp. 1458-1461 Full Text: PDF (179 kB)
OPTICS, QUANTUM ELECTRONICS
Generation of X-ray Radiation with a High Pulse Repetition Rate by Means of a Volume Discharge in an Open Gas Diode
V. F. Tarasenko, S. K. Lyubutin, S. N. Rukin, B. G. Slovikovskii, I. D. Kostyrya, and V. M. Orlovskii
pp. 1462-1466 Full Text: PDF (117 kB)
Excitation of UV Radiation by a Pulsed-Periodic Discharge in Xenon
D. L. Glebov, O. N. Kryutchenko, D. A. Morozov, and M. V. Chirkin
pp. 1467-1469 Full Text: PDF (47 kB)
RADIOPHYSICS
Conditions for the Onset of Superradiance Regime in a Relativistic Electron Bunch
V. V. Porkhaev, N. V. Zavialov, V. T. Punin, A. V. Telnov, and Yu. A. Khokhlov[dagger]
pp. 1470-1473 Full Text: PDF (51 kB)
Interference of Co- and Counterpropagating Waveguide Modes in a Planar Structure
Yu. N. Kuznetsov and D. I. Sementsov
pp. 1474-1478 Full Text: PDF (74 kB)
Electric- and Magnetic-Field Strengths in the Fresnel Zone of a Microradiator Formed by an Electric and a Magnetic Dipole
O. G. Vendik and I. A. Pakhomov
pp. 1479-1484 Full Text: PDF (74 kB)
SURFACE, ELECTRON AND ION EMISSION
Energy Distribution of Electrons Field-Emitted from Carbon Nanoemitters
V. M. Lobanov
pp. 1485-1489 Full Text: PDF (71 kB)
Ion Transport Mechanism in Solid Electrolyte Films on Lithium
A. V. Churikov
pp. 1490-1496 Full Text: PDF (123 kB)
EXPERIMENTAL INSTRUMENTS AND TECHNIQUES
Massive, Thick-Film, and Thin-Film La0.6Sr0.3Mn1.1 – xFexO3 ± delta Magnetoresistive Ceramics: Structure and Properties
V. P. Pashchenko, Yu. F. Revenko, A. V. Pashchenko, V. K. Prokopenko, A. A. Shemyakov, V. A. Turchenko, N. I. Nosanov, V. I. Volkov, V. M. Ishchuk, I. N. Chukanova, A. I. Bazhin, and V. V. Pashchenko
pp. 1497-1503 Full Text: PDF (99 kB)
Growth of Carbon Nanotubes from Ring Carbon Clusters
N. I. Alekseev and G. A. Dyuzhev
pp. 1504-1510 Full Text: PDF (104 kB)
SHORT COMMUNICATIONS
Edge Apodization of Crystal-like Structures
E. A. Nelin
pp. 1511-1512 Full Text: PDF (42 kB)
Semiinsulating Layers of Cadmium Telluride
V. P. Makhnii
pp. 1513-1514 Full Text: PDF (25 kB)
Distribution of the Electromagnetic Field of a High-Frequency Capacitive Filamentary Discharge Operating at Atmospheric Pressure
Yu. Yu. Lutsenko
pp. 1515-1517 Full Text: PDF (39 kB)
Mathematical Simulations of the Development of the Ion Hose Instability of a Relativistic Electron Beam in a Plasma Channel with a Varying Density
A. G. Zelensky and E. K. Kolesnikov
pp. 1518-1519 Full Text: PDF (39 kB)
On Stabilization of a Perfectly Conducting Compressible Plasma Jet Flow
V. G. Kirtskhaliya and I. A. Zhvaniya[dagger]
pp. 1520-1521 Full Text: PDF (26 kB)
Thermal Radiation from Nanoparticles
Yu. V. Martynenko and L. I. Ognev
pp. 1522-1524 Full Text: PDF (50 kB)
Long-Range Effect of Light on the Microhardness of Annealed Molybdenum Foils
D. I. Tetelbaum, E. V. Kuril'chik, and Yu. A. Mendeleva
pp. 1525-1527 Full Text: PDF (44 kB)
Photoelectron Emission from Granulated Gold Films Activated by Cesium and Oxygen
E. L. Nolle and M. Ya. Schelev
pp. 1528-1530 Full Text: PDF (45 kB)
Calculation of the Properties of a Lens Made of Glass Bricks by the Equivalent-Current Method
D. V. Shannikov, V. V. Surikov, and S. V. Kuz'min
pp. 1531-1534 Full Text: PDF (59 kB)Archived web conten
The combinatorial derivation
No full text[EN] Let G be a group, G be the family of all subsets of G. For a subset A ⊆ G, we put Δ(A) = { g ∈ G : |gA ∩ A| = ℵ₀ }. The mapping Δ : G → G, A ↦ Δ(A), is called a combinatorial derivation and can be considered as an analogue of the topological derivation ∂ : X → X, A ↦ Aᵈ, where X is a topological space and Aᵈ is the set of all limit points of A. Content: elementary properties, thin and almost thin subsets, partitions, inverse construction, and Δ-trajectories, Δ and ∂.Protasov, IV. (2013). The combinatorial derivation. Applied General Topology. 14(2):171-178. https://doi.org/10.4995/agt.2013.1587SWORD171178142BANAKH, T., & LYASKOVSKA, N. (2008). WEAKLY P-SMALL NOT P-SMALL SUBSETS IN GROUPS. International Journal of Algebra and Computation, 18(01), 1-6. doi:10.1142/s0218196708004263M. Filali and I. Protasov, Ultrafilters and Topologies on Groups, Math. Stud. Monorg. Ser., Vol. 13, VNTL Publishers, Lviv, 2010.Hindman, N., & Strauss, D. (1998). Algebra in the Stone-Čech Compactification. doi:10.1515/9783110809220Ie. Lutsenko, Thin systems of generators of groups, Algebra and Discrete Math., 9 (2010), 108-114.LUTSENKO, I., & PROTASOV, I. V. (2009). SPARSE, THIN AND OTHER SUBSETS OF GROUPS. International Journal of Algebra and Computation, 19(04), 491-510. doi:10.1142/s0218196709005135Protasov, I. V. (2011). Selective survey on Subset Combinatorics of Groups. Journal of Mathematical Sciences, 174(4), 486-514. doi:10.1007/s10958-011-0314-xI. Protasov and T. Banakh, Ball Structure and Colorings of Groups and Graphs, Math. Stud. Monorg. Ser., Vol. 11, VNTL Publishers, Lviv, 2003.Tao, T., & Van Vu, H. (2006). Additive Combinatorics. doi:10.1017/cbo978051175514
Classification of quasigroups according to directions of translations I
No full textsummary:It is proved that every translation in a quasigroup has two independent parameters. One of them is a bijection of the carrier set. The second parameter is called a direction here. Properties of directions in a quasigroup are considered in the first part of the work. In particular, totally symmetric, semisymmetric, commutative, left and right symmetric and also asymmetric quasigroups are characterized within these concepts. The sets of translations of the same direction are under consideration in the second part of the work. Coincidence of these sets defines nine varieties, among them are varieties of , , and quasigroups. Quasigroups in other five varieties also have some invertibility properties
SLC31 family of copper transporters in GtoPdb v.2023.1
No full textSLC31 family members, alongside the Cu-ATPases are involved in the regulation of cellular copper levels. The CTR1 transporter is a cell-surface transporter to allow monovalent copper accumulation into cells, while CTR2 appears to be a vacuolar/vesicular transporter [5]. Functional copper transporters appear to be trimeric with each subunit having three TM regions and an extracellular N-terminus. CTR1 is considered to be a higher affinity copper transporter compared to CTR2. The stoichiometry of copper accumulation is unclear, but appears to be energy-independent [4]
Сравнение точности основных численных методов расчета волноводов с помощью пакета MATHEMATICA
No full textTARASUK N. P., LUTSENKO E. V., GLADYSHCHUK A. A. Comparison of the basic numerical computational methods accuracy in case of waveguides with use of Mathematica packageПредставлены три наиболее популярных численных метода расчета волноводов: метод матриц переноса, метод конечных разностей и метод конечных элементов. На примере простой модели трехслойного плоского волновода с активной областью GaAs проведено сравнение точности вычислений эффективных показателей преломления и интенсивностей волноводных мод данными методами между собой, а так же с расчетом дисперсионного уравнения
Анализ температурных зависимостей параметров гетероперехода графен/n-Si
No full textIn this study, the forward bias I-V characteristics of graphene/n-Si heterojunctions were studied in the wide temperature range of 10–320 K in order to get detailed information on the barrier heights distribution (). The Schottky parameters (, η) are estimated in the framework of the thermoelectron emission theory using Cheung-Cheung method considering the presence of the interface native oxide layer. At room temperature, we obtain an ideality factor of about 2.5 and a Schottky barrier height of ~0.22 eV, which reduces at lower temperatures. A quantitative analysis of the inhomogeneity in Schottky barrier heights is presented using the potential fluctuation model proposed by Werner and Guttler
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