865 research outputs found
Bahumukhī mana, bahurupī prema
The document contains a novel written by the Bengali author Nirpendra Kumar Basu (1898-1979). The monograph is from the private collection of Sharmadip Basu
Effect of zirconia addition on the fatigue behaviour of fine grained alumina Author(s): Basu D; Sarkar BK
The fatigue behaviour of fine grained Al2O3 and ZrO2 toughened Al2O3 (ZTA) compositions with 15 vol% ZrO2 (3 mol% Y2O3 stabilized: 3Y-TZP) have been investigated by using three different techniques, Primarily l-point bending load was employed to generate tension-tension fatigue data under both static and cyclic conditions, The results clear-ly showed that the materials were susceptible to both the static and cyclic fatigue and the time to failure under cyclic loading was considerably shorter than the equivalent static loads. The repeated indentations at the same spot with varying loads showed a typical fatigue behaviour. In addition, both the materials were subjected to the repeated impact cycles at varying subcritical loads simulating impact fatigue, In all the cases typical fatigue curves were obtained having a progressive endurance at subcritical loads having an endurance limit, The fatigue behaviour of Al2O3 was much improved by the addition of 15 vol% 3Y-TZP. having micro-plasticity contributing towards the cyclic fatigue phenomena of these materials
Characterizing Logarithmic Bregman Functions
Minimum divergence procedures based on the density power divergence and the
logarithmic density power divergence have been extremely popular and successful
in generating inference procedures which combine a high degree of model
efficiency with strong outlier stability. Such procedures are always preferable
in practical situations over procedures which achieve their robustness at a
major cost of efficiency or are highly efficient but have poor robustness
properties. The density power divergence (DPD) family of Basu et al.(1998) and
the logarithmic density power divergence (LDPD) family of Jones et al.(2001)
provide flexible classes of divergences where the adjustment between efficiency
and robustness is controlled by a single, real, non-negative parameter. The
usefulness of these two families of divergences in statistical inference makes
it meaningful to search for other related families of divergences in the same
spirit. The DPD family is a member of the class of Bregman divergences, and the
LDPD family is obtained by log transformations of the different segments of the
divergences within the DPD family. Both the DPD and LDPD families lead to the
Kullback-Leibler divergence in the limiting case as the tuning parameter
. In this paper we study this relation in detail, and
demonstrate that such log transformations can only be meaningful in the context
of the DPD (or the convex generating function of the DPD) within the general
fold of Bregman divergences, giving us a limit to the extent to which the
search for useful divergences could be successful.Comment: Current Status : Submitted to Pattern Recognition Letter
t-UNITY – A Formal Framework for Modeling and Reasoning About Timing Constraints in Real-Time Systems
Simulation Studies of R2(Δ η, Δ ϕ) and P2(Δ η, Δ ϕ) Correlation Functions in pp Collisions with the PYTHIA and HERWIG Models
We presented a study of charge-independent (CI) and charge-dependent (CD) two-particle differential number correlation functions R2 and transverse momentum correlation functions P2 in pp collisions at s=2.76 TeV with the PYTHIA and HERWIG models.Calculations were presented for unidentified hadrons in three pT ranges 0.2 < pT≤ 2.0 GeV/c, 2.0 < pT≤ 5.0 GeV/c, and 5.0 < pT≤ 30.0 GeV/c.PYTHIA and HERWIG both qualitatively reproduce the near-side peak and away-side ridge correlation features reported by experiments.At low pT, both models produce narrower near-side peaks in P2 correlations than in R2 as reported by the ALICE collaboration in p–Pb and Pb–Pb collisions.This suggests that the narrower shape of the P2 near-side peak is largely determined by the pT dependent angular ordering of hadrons produced in jets.Both PYTHIA and HERWIG predict widths that decrease with increasing pT.Widths extracted for P2 correlators are typically significantly narrower than those of the R2 counterparts [1]
Impact of Time-dependent Annealing on TiO2 Films for CMOS application
Post-deposition annealing (PDA) is the inherent part of sol-gel fabrication process to achieve the optimum device performance, especially in CMOS applications. The annealing removes the oxygen vacancies and improves the structural order of dielectric films. The process also reduces the interface related defects and improves the interfacial properties. In this work, we have integrated the sol-gel spin-coating deposited high-TiO2 films in MOS. The films are fired at 400 degrees C for the duration of 20, 40, 60 and 80 min. The thicknesses of the films were found to be of similar to 30 nm using ellipsometry. The (Al/TiO2/p-Si) devices were examined with current-voltage (I-V) and capacitance-voltage (C-V) at room temperature to understand the influence of firing time. The C-V and I-V characteristic showed a significant dependence on annealing time such as variation in dielectric constant and leakage current. The accumulation capacitance (Cox), dielectric constant (kappa) and the equivalent oxide thickness (EOT) of the film fired for 60 min were found to be 458 pF, 33, and 4.25nm, respectively with a low leakage current density (1.09 10(-6) A/cm(2)) fired for 80 min at + 1 V
Band Alignment and Electrical Investigations of Ultra-Thin Al2O3 on Si by E-beam Evaporation
The continuous downscaling leads the search of high-gate dielectrics. The films amorphous in nature offered good mechanical flexibility, smooth surfaces and better uniformity associated with low leakage current density. In this work, 16 nm thick amorphous Al2O3 films on silicon substrate are fabricated by E-beam evaporation. The high value of refractive index (1.76) extracted from ellipsometry analysis directs the deposition of compact film. The AFM analysis reveal a flat surface with small RMS surface roughness 1.5 angstrom. The band gap is extracted from O-1s electron loss spectra and was found 6.7 eV and band alignment of Al2O3/Si is derived from the UPS measurements. The films are incorporated in Metal Insulator -Semiconductor (MIS) capacitor to perform the electrical measurement. The flat band voltage (V-FB), dielectric constant () and oxide trapped charges (Q(ot)) extracted from high frequency (1 MHz) C-V curve are - 0.4 V, 8.4 and 2 x 10(11) cm(-2), respectively. The small flat band voltage - 0.4 V, narrow hysteresis and very little frequency dispersion suggest an exceptional good Al2O3/Si interface with small quantity of trapped charges in the oxide. The leakage current density was 4.27 x 10(-8) A/cm(2) at 1 V. The moderate dielectric constant and low leakage current density with ultra-smooth surface is quite useful towards its application in future CMOS and memory devices
H. J. Bhabha : a case study of synchronous references
Quantitative analysis of the events of synchronous references in the research papers followed throughout the publishing career of an individual scientist revealed interesting highlights on the knowledge-generating-system. In the case study of Homi Jehangir Bhabha first quinquennium and fifth quinquennium of his research career had low Self-references; third quinquennium and fourth quinquennium had moderate Self-references; whereas second quinquennium had highest Self-references. The two major clusters of Self-references occurring during the second and third quinquennium were indicators of active periods of knowledgegenerating and faster communications.(Revised version published in 2006 in International Journal of Nuclear Knowledge Management,Vol.2. No.1. pp.14-30. see PDF2
An experimental and theoretical investigation on torrefaction of a large wet wood particle
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