35,877 research outputs found
Informetrics on M. N. Srinivas
No full textM. N. Srinivas, the well known sociologist is widely recognised as architect of modern Indian sociology and social anthropology. His publications have been analysed by year, domain, authorship pattern, channels of communication used. Keywords, etc. The results indicate that the papers published by him are of a nature that qualify him to be a 'role model' for the younger generations to emulate.
By the end of 1995, Srinivas had to his credit 144 papers which, included 33 broad papers in sociology and anthropology; 18 papers in social change; 28 papers in village studies; 12 papers on religion; 17 papers on caste and 36 papers of general popular interest. The periods 1958-61 and 1974-77, when Srinivas was 38-41 and 58-61 years old. were his most productive periods with highest publication activity
Semiconductors V. 39, I. 12
No full textSemiconductors -- December 2005
Volume 39, Issue 12, pp. 1361-1432
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electroluminescence of Graded-gap Structures with Blocking and Ohmic Contacts
B. S. Sokolovskii, V. I. Ivanov-Omskii, and G. A. Il'chuk
pp. 1361-1368 Full Text: PDF (99 kB)
Mössbauer Study of the Ge Two-Electron Donor Centers in PbSe
E. I. Terukov and É. S. Khuzhakulov
pp. 1369-1370 Full Text: PDF (36 kB)
Electron Exchange between Neutral and Ionized Germanium Centers in PbSe
E. I. Terukov and É. S. Khuzhakulov
pp. 1371-1373 Full Text: PDF (38 kB)
Characterization of Photonic Crystals Based on Opal–Semiconductor Composites by Bragg Reflection Spectroscopy
G. M. Gadzhiev, V. G. Golubev, D. A. Kurdyukov, A. B. Pevtsov, A. V. Sel'kin, and V. V. Travnikov
pp. 1374-1380 Full Text: PDF (89 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
On the Effect of Transverse Quantum Confinement on the Electrical Characteristics of a Submicrometer-Sized Tunnel MOS Structure
M. I. Vexler, I. V. Grekhov, and A. F. Shulekin
pp. 1381-1386 Full Text: PDF (96 kB)
Simulation of the Capacitance–Voltage Characteristics of a Ferroelectric Material
L. S. Berman
pp. 1387-1390 Full Text: PDF (49 kB)
Estimation of the Energy Characteristics of the 3C-SiC/2H-, 4H-, 6H-, and 8H-SiC Heterojunctions
S. Yu. Davydov, A. A. Lebedev, and O. V. Posrednik
pp. 1391-1393 Full Text: PDF (48 kB)
Measurement of Micrometer Diffusion Lengths by Nuclear Spectrometry
N. B. Strokan, A. M. Ivanov, A. A. Lebedev, M. Syväjärvi, and R. Yakimova
pp. 1394-1398 Full Text: PDF (68 kB)
Light-Emitting Si:Er Structures Produced by Molecular-Beam Epitaxy: High-Resolution Photoluminescence Spectroscopy
D. I. Kryzhkov, N. A. Sobolev, B. A. Andreev, D. V. Denisov, Z. F. Krasil'nik, and E. I. Shek
pp. 1399-1402 Full Text: PDF (53 kB)
Electrical Properties of n-GaN/p-SiC Heterojunctions
O. Yu. Ledyaev, A. M. Strel'chuk, A. N. Kuznetsov, N. V. Seredova, A. S. Zubrilov, A. A. Volkova, A. E. Nikolaev, and A. A. Lebedev
pp. 1403-1405 Full Text: PDF (51 kB)
Photosensitivity of Photocells Based on ZnO/CdS/Cu(In, Ga)Se2 Heterostructures and Exposed to gamma-ray Radiation
V. V. Emtsev, Yu. A. Nikolaev, D. S. Poloskin, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, and M. V. Yakushev
pp. 1406-1409 Full Text: PDF (78 kB)
LOW-DIMENSIONAL SYSTEMS
The Tail of Localized States in the Band Gap of the Quantum Well in the In0.2Ga0.8N/GaN System and Its Effect on the Laser-Excited Photoluminescence Spectrum
M. A. Jacobson, D. K. Nelson, O. V. Konstantinov, and A. V. Matveentsev
pp. 1410-1414 Full Text: PDF (69 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Continuous-wave Lasing of Single-Mode Metamorphic Quantum Dot Lasers for the 1.5-µm Spectral Region
L. Ya. Karachinsky, T. Kettler, N. Yu. Gordeev, I. I. Novikov, M. V. Maximov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. E. Zhukov, E. S. Semenova, A. P. Vasil'ev, V. M. Ustinov, N. N. Ledentsov, A. R. Kovsh, V. A. Shchukin, S. S. Mikhrin, A. Lochmann, O. Schulz, L. Reissmann, and D. Bimberg
pp. 1415-1419 Full Text: PDF (72 kB)
The Limiting Energy Resolution of SiC Detectors in Ion Spectrometry
N. B. Strokan, A. M. Ivanov, A. A. Lebedev, M. Syväjärvi, and R. Yakimova
pp. 1420-1425 Full Text: PDF (72 kB)
"Ideal" Static Breakdown in High-Voltage (1 kV) 4H-SiC p–n Junction Diodes with Guard Ring Termination
P. A. Ivanov, I. V. Grekhov, N. D. Il'inskaya, and T. P. Samsonova
pp. 1426-1428 Full Text: PDF (53 kB)
PERSONALIA
Yurii Vasil'evich Shmartsev (On the 75th Anniversary of His Birth)
pp. 1429-1430 Full Text: PDF (82 kB)
Boris Vasil'evich Tsarenkov (On the 75th Anniversary of His Birth)
pp. 1431-1432 Full Text: PDF (57 kB)Archived web conten
Lung pathology of covid-19 in Moscow
No full textWe analyzed lung material from 22 dead obtained on autopsy for the period from March, 6 to April,30, 2020, in various clin-ics in Moscow. For this period died 532 patients (219 female, 324 male),with mean age 67.47±14.67 years. In all 22 deceased patients, the diagnosis of COVID-19 was confirmed in vivo (PCR study on material from the nasopharynx, in some patients by a positive PCR analysis in material obtained from trachea and lung tissue during autopsy). The average age of these deceased was 72.27±10.74 years, the duration of the disease ranged from 5 to 32 days. In severe COVID-19, patients develop viral interstitial pneumonia with the development of diffuse alveolar damage, which causes a severe course of the disease, hypoxia, and respiratory failure. An incomplete correspondence was found between morphological changes in the lungs (phases of diffuse alveolar damage) and the duration of the disease, which is most likely due to the unspecified duration of the asymptomatic course in many patients. The course of a new coronavirus infection is characterized by primary damage to the lungs, an increase in hemoglobin concentration in the blood, a decrease in SpO , lymphopenia with a simultaneous increase in leukocytosis, and signs of hyperco-agulation in extremely severe patients. Virus-bacterial pneumonia may occur mainly in individuals with tracheal intubation, with tracheostomy and prolonged mechanical ventilation on any stage of the disease.
Semiconductors V. 35, I. 04
No full textSemiconductors -- April 2001
Volume 35, Issue 4, pp. 371-489
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
The Effect of Various Types of Shallow Impurities and Their Concentration on Microhardness and Photomechanical Properties of Semiconductors
A. B. Gerasimov and G. D. Chiradze
pp. 371-373 Full Text: PDF (39 kB)
Laser Beam Epitaxy of HgCdTe/Si Heterostructures
S. V. Plyatsko and N. N. Bergush
pp. 374-376 Full Text: PDF (53 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Emission from Hot Charge Carriers during the Formation of High-Field Autosolitons in Electron–Hole Plasma in n-Ge
M. N. Vinoslavskii and A. V. Kravchenko
pp. 377-383 Full Text: PDF (105 kB)
An Analysis of the Shape of a Luminescence Band Induced by Transitions of Free Electrons to Carbon Atoms in Semi-Insulating Undoped GaAs Crystals
K. D. Glinchuk, N. M. Litovchenko, A. V. Prokhorovich, and O. N. Stril'chuk
pp. 384-390 Full Text: PDF (112 kB)
Relaxation Features of the Dielectric Response of Cd1 – xZnxTe Crystals Grown from the Melt
I. A. Klimenko, V. K. Komar', V. P. Migal', and D. P. Nalivaiko
pp. 391-393 Full Text: PDF (53 kB)
Semiempirical Model of Carrier Mobility in Silicon Carbide for Analyzing Its Dependence on Temperature and Doping Level
T. T. Mnatsakanov, L. I. Pomortseva, and S. N. Yurkov
pp. 394-397 Full Text: PDF (50 kB)
Dipole Moments of Ligands and Stark Splitting of Levels of Rare-Earth Ions
M. M. Chumachkova and A. B. Roitsin[dagger]
pp. 398-404 Full Text: PDF (83 kB)
Mechanisms of Incorporation of an Antimony Impurity into Cadmium Telluride Crystals
E. S. Nikonyuk, Z. I. Zakharuk, V. L. Shlyakhovyi, P. M. Fochuk, and A. I. Rarenko
pp. 405-408 Full Text: PDF (73 kB)
A Study of the Electrical and Optical Properties of Si Delta-Doped GaAs Layers Grown by MBE on a (111)A GaAs Surface Misoriented toward the [21-bar 1-bar ] Direction
G. B. Galiev, V. G. Mokerov, É. R. Lyapin, V. V. Saraikin, and Yu. V. Khabarov
pp. 409-414 Full Text: PDF (267 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
The Use of the Amphoteric Nature of Impurity Silicon Atoms for Obtaining Planar p–n Junctions on GaAs (111)A Substrates by Molecular Beam Epitaxy
G. B. Galiev, V. É. Kaminskii, V. G. Mokerov, and L. É. Velikhovskii
pp. 415-418 Full Text: PDF (178 kB)
Structural, Luminescent, and Transport Properties of Hybrid AlAsSb/InAs/Cd(Mg)Se Heterostructures Grown by Molecular Beam Epitaxy
V. A. Solov'ev, I. V. Sedova, A. A. Toropov, Ya. V. Terent'ev, S. V. Sorokin, B. Ya. Mel'tser, S. V. Ivanov, and P. S. Kop'ev
pp. 419-423 Full Text: PDF (143 kB)
Interface States and Capacitance–Voltage Characteristics of n-SnO2:Ni/p-Si Heterostructures under Gas-Adsorption Conditions
R. B. Vasil'ev, A. M. Gas'kov, M. N. Rumyantseva, L. I. Ryabova, and B. A. Akimov
pp. 424-426 Full Text: PDF (54 kB)
The Transition Layer in TiB2–GaAs and Au–TiB2–GaAs Schottky Contacts
E. F. Venger, R. V. Konakova, O. B. Okhrimenko, S. Yu. Sapko, L. V. Shekhovtsov, and V. N. Ivanov
pp. 427-432 Full Text: PDF (79 kB)
Hot-Hole Lateral Transport in a Two-Dimensional GaAs/Al0.3Ga0.7As Structure
Yu. L. Ivanov, I. V. Elizarov, V. M. Ustinov, and A. E. Zhukov
pp. 433-435 Full Text: PDF (48 kB)
LOW-DIMENSIONAL SYSTEMS
Conductance of Quasi-Two-Dimensional Semiconductor Systems with Electrostatic Disorder in the Region of the Percolation Metal–Insulator Transition
B. A. Aronzon, D. A. Bakaushin, A. S. Vedeneev, A. B. Davydov, E. Z. Meilikhov, and N. K. Chumakov
pp. 436-443 Full Text: PDF (128 kB)
Plasma Oscillations in Two-Dimensional Semiconductor Superstructures in the Presence of a High Electric Field
S. Yu. Glazov and S. V. Kryuchkov
pp. 444-446 Full Text: PDF (46 kB)
Magnetic-Field-Induced Transitions between Minibands in GaAs/AlxGa1 – xAs Superlattices
V. F. Sapega, D. N. Mirlin, T. Ruf, M. Cardona, W. Winter, and K. Eberl
pp. 447-450 Full Text: PDF (58 kB)
PHYSICS OF SEMICONDUCTORS DEVICES
The Effect of Pulsed Laser Annealing on the Parameters of CdxHg1 – xTe Photoresistors
V. N. Ryzhkov, M. I. Ibragimova, and N. S. Baryshev
pp. 451-452 Full Text: PDF (37 kB)
Photodiodes for a 1.5–4.8 µm Spectral Range Based on Type-II GaSb/InGaAsSb Heterostructures
N. D. Stoyanov, M. P. Mikhailova, O. V. Andreichuk, K. D. Moiseev, I. A. Andreev, M. A. Afrailov, and Yu. P. Yakovlev
pp. 453-458 Full Text: PDF (98 kB)
Photoelectric Characteristics of Infrared Photodetectors with Blocked Hopping Conduction
D. G. Esaev and S. P. Sinitsa
pp. 459-463 Full Text: PDF (64 kB)
Suppression of Current by Light in p-Si–n+-ZnO–n-ZnO–Pd Diode Structures
S. V. Slobodchikov, Kh. M. Salikhov, E. V. Russu, and Yu. G. Malinin
pp. 464-467 Full Text: PDF (55 kB)
A Study of Deep Traps at the SiO2/6H-SiC Interface Relying upon the Nonequilibrium Field Effect
P. A. Ivanov, T. P. Samsonova, V. N. Panteleev, and D. Yu. Polyakov
pp. 468-473 Full Text: PDF (85 kB)
Consideration of the "Island" Background Charge in Single-Electron Transistor Simulation
I. I. Abramov and E. G. Novik
pp. 474-476 Full Text: PDF (40 kB)
The Effect of Dislocations Formed during Growth on the Structure and Photoluminescence of i–n––n–n+-GaAs Epilayers and on the Related Microwave Transistors Parameters
M. P. Lisitsa, F. V. Motsnyi, V. F. Motsnyi, and I. V. Prokopenko
pp. 477-480 Full Text: PDF (151 kB)
Radiation Hardness of SiC Ion Detectors under Relativistic Protons
A. M. Ivanov, N. B. Strokan, D. V. Davydov, N. S. Savkina, A. A. Lebedev, Yu. T. Mironov, G. A. Ryabov, and E. M. Ivanov
pp. 481-484 Full Text: PDF (55 kB)
The Thermal Cross-Interference Effects in the Arrays of Vertical-Cavity Surface-Emitting Lasers
S. M. Zakharov
pp. 485-489 Full Text: PDF (69 kB)Archived web conten
Illuminaçao Apologetica do retrato de Morteçor en que aparecem com mais vivas côres os erros do author do novo Methodo, e seu Apologista ...
No full textFecha sacada de la pág.2 y 159Sign.: A-V\p4\sError tipográfico de signatura : a B\b2\s llama B\b3\
Динаміка показників легеневого ушкодження за умови експериментального HCl-індукованого гострого ураження легень = Dynamics of pulmonary damage parameters in experimental HCl-induced acute lung injury
No full textHryshchuk L. A., Besky V. O., Marushchak M. I. Динаміка показників легеневого ушкодження за умови експериментального HCl-індукованого гострого ураження легень = Dynamics of pulmonary damage parameters in experimental HCl-induced acute lung injury. Journal of Health Sciences. 2014;4(14):175-181. ISSN 1429-9623 / 2300-665X.
http://journal.rsw.edu.pl/index.php/JHS/article/view/2014%3B4%2814%29%3A175-181
https://pbn.nauka.gov.pl/works/512853
DOI: 10.5281/zenodo.13349
http://dx.doi.org/10.5281/zenodo.13349
The journal has had 5 points in Ministry of Science and Higher Education of Poland parametric evaluation. Part B item 1107. (17.12.2013).
© The Author (s) 2014;
This article is published with open access at Licensee Open Journal Systems of Radom University in Radom, Poland
Open Access. This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium,
provided the original author(s) and source are credited. This is an open access article licensed under the terms of the Creative Commons Attribution Non Commercial License
(http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted, non commercial use, distribution and reproduction in any medium, provided the work is properly cited.
This is an open access article licensed under the terms of the Creative Commons Attribution Non Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted, non commercial
use, distribution and reproduction in any medium, provided the work is properly cited.
Conflict of interest: None declared. Received: 15.11.2014. Revised 05.12.2014. Accepted: 10.12.2014.
Динаміка показників легеневого ушкодження за умови експериментального HCl-індукованого гострого ураження легень
Dynamics of pulmonary damage parameters in experimental
HCl-induced acute lung injury
Грищук Л.А., Беський В.О., Марущак М.І.
Hryshchuk L.A., Besky V.O., Marushchak M.I.
ДВНЗ «Тернопільський державний медичний університет імені
І.Я. Горбачевського МОЗ України»
SHEI Ternopil State Medical University named after I.Ya. Gorbachevsky MOH of Ukraine
Резюме. Метою даного дослідження було визначити ступінь розвитку набряку легень і рівень метаболізму сурфактанта у динаміці гострого ураження легень хлоридною кислотою. Досліди були проведені на 60 білих статевозрілих нелінійних щурах-самцях масою 200-220 г, яким моделювали гостре ураження легень шляхом інтратрахеального введення хлоридної кислоти при рН 1,2 в дозі 1,0 мл/кг на вдиху. Визначали індекс оксигенації рO2/FiO2 артеріальної крові, вміст білка у бронхоальвеолярному змиві, Wet/Dry індекси і коефіцієнт стабільності міхурців піни за R. Pattle.
Розвиток легеневого ушкодження за умови інтратрахеального введення хлоридної кислоти підтверджено як підвищенням втричі концентрації білка у БАЗ до кінця першої доби, так і розрахованими індексами розвитку легеневого набряку, які вказували на достовірне зростання набряку легеневої тканини і легеневого ексудату протягом часу спостереження. Встановлено прогресуюче зниження рівня показників поверхневої активності ССЛ протягом першої доби спостереження, що характеризується значним збільшенням рівня максимального поверхневого натягу з одночасним зниженням індексу стабільності на 45,8 % порівняно з контролем.
Отже, отримані дані чітко вказують на формування ГУЛ за рахунок розвитку набряку легеневої тканини та накопичення ексудативної рідини, і як наслідок, порушення оксигенації з розвитком гіпоксемії. Акумуляція рідини, багатої білками в альвеолах є чинником інактивації сурфактанту, що зумовлює зниженням індексу стабільності.
Ключові слова: гостре ураження легень, хлоридна кислота, набряк легень, сурфактантна система.
Summary. The aim of this study was to determine the degree of pulmonary edema and metabolic rate of surfactant in the dynamics of hydrochloric acid (HCl)-induced acute lung injury (ALI).
The development of lung damage in case of intratracheal introduction of HCl confirmed as three times higher concentration of protein in bronchoalveolar lavage after 24 hours of experiment, and rise calculated indices of pulmonary edema, which indicated a significant increase in lung tissue edema and pulmonary fluid in all groups of observation. It was found a progressive decrease in surface activity indicators of pulmonary surfactant system during the first day of observation: significant increase in the level of maximum surface tension with a simultaneous decrease in the stability index by 45.8%. Thus, the data indicate the formation of ALI by edema of the lung tissue and accumulation of exudative fluid, and as a consequence, impaired oxygenation with the development of hypoxemia. Accumulation of rich in proteins fluid in the alveoli is the factor of surfactant inactivation that leads to decreased of stability coefficient.
Key words: acute lung injury, hydrochloric acid, pulmonary edema, surfactant system.Hryshchuk L. A., Besky V. O., Marushchak M. I. Динаміка показників легеневого ушкодження за умови експериментального HCl-індукованого гострого ураження легень = Dynamics of pulmonary damage parameters in experimental HCl-induced acute lung injury. Journal of Health Sciences. 2014;4(14):175-181. ISSN 1429-9623 / 2300-665X.
http://journal.rsw.edu.pl/index.php/JHS/article/view/2014%3B4%2814%29%3A175-181
https://pbn.nauka.gov.pl/works/512853
DOI: 10.5281/zenodo.13349
http://dx.doi.org/10.5281/zenodo.1334
Semiconductors V. 31, I. 11
No full textleave(s) : ill; 28 cm.Semiconductors -- November 1997
Volume 31, Issue 11, pp. 1101-1215
Anisotropic thermocouples article
A. A. Snarskii, A. M. Pal'ti, and A. A. Ashcheulov
Full Text: PDF (286 kB)
Low-energy nonparabolicity and condenson states in In4Se3 crystals
D. M. Bercha, L. Yu. Kharkhalis, A. I. Bercha, and M. Shnajder
Full Text: PDF (153 kB)
Tunneling effects in light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with quantum wells
V. E. Kudryashov, K. G. Zolin, A. N. Turkin, A. �. Yunovich, A. N. Kovalev, and F. I. Manyakhin
Full Text: PDF (131 kB)
Electron-structural metastability of cationic donor centers in GaAs
D. E. Onopko, A. I. Ryskin, and N. T. Bagraev
Full Text: PDF (92 kB)
Optical properties of thin n-Pb1 ��� xSnxSe/BaF2 epitaxial layers in the plasmon���phonon interaction region
A. A. Kopylov, V. A. Moshnikov, and A. N. Kholodilov
Full Text: PDF (135 kB)
Position of antimony impurity atoms in a PbTe lattice, determined by emission M�_ssbauer spectroscopy
V. F. Masterov, F. S. Nasredinov, S. A. Nemov, P. P. Seregin, N. N. Troitskaya, and S. I. Bondarevskii
Full Text: PDF (47 kB)
Extraction of charge carriers in semiconductors with a monopolar component of the photoconductivity
A. I. Vlasenko, Z. K. Vlasenko, and A. V. Lyubchenko
Full Text: PDF (100 kB)
Photoluminescence of n-type ZnSe crystals doped with donor and acceptor impurities from a LiCl salt melt
G. N. Ivanova, V. A. Kasiyan, and D. D. Nedeoglo
Full Text: PDF (84 kB)
Effect of band-gap narrowing on the diffusion of charged impurities in semiconductors
B. S. Sokolovskii and L. S. Monastyrskii
Full Text: PDF (82 kB)
Photoconductivity of CuInSe2 films
V. Yu. Rud' and Yu. V. Rud'
Full Text: PDF (62 kB)
Relaxation properties of a metal���chalcogenide glassy semiconductor
V. T. Avanesyan, V. A. Bordovskii, and R. A. Castro
Full Text: PDF (42 kB)
Electrical and photoelectric properties of an anisotypic Pb0.93Sn0.07Se/PbSe heterojunction
T. A. Gavrikova and V. A. Zykov
Full Text: PDF (90 kB)
Excitonic electroluminescence of 6H-SiC p���n structures obtained by sublimation epitaxy
A. A. Lebedev, N. K. Poletaev, and M. Z. doKarmo
Full Text: PDF (63 kB)
Passivation of GaAs in alcohol solutions of ammonium sulfide
V. N. Bessolov, E. V. Konenkova, M. V. Lebedev, and D. R. T. Zahn
Full Text: PDF (105 kB)
Heating of a two-dimensional electron gas by the electric field of a surface acoustic wave
I. L. Drichko, A. M. D'yakonov, V. D. Kagan, A. M. Kreshchuk, T. A. Polyanskaya, I. G. Savel'ev, I. Yu. Smirnov, and A. V. Suslov
Full Text: PDF (175 kB)
Optical spectroscopy of two-dimensional electronic states in modulation-doped N-AlGaAs/GaAs heterostructures
A. V. Guk, V. �. Kaminskii, V. G. Mokerov, Yu. V. Fedorov, and Yu. V. Khabarov
Full Text: PDF (158 kB)
Effect of the spin-orbit interaction on the optical spectra of an acceptor in a semiconductor quantum dot
A. F. Polupanov, V. I. Galiev, and M. G. Novak
Full Text: PDF (161 kB)
Photoluminescence of porous gallium arsenide
D. N. Goryachev and O. M. Sreseli
Full Text: PDF (68 kB)
Polarization memory in an oxidized porous SiC layer
A. M. Danishevskii, A. Yu. Rogachev, V. B. Shuman, and E. G. Guk
Full Text: PDF (86 kB)
Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3��m
T. N. Danilova, A. P. Danilova, O. G. Ershov, A. N. Imenkov, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev
Full Text: PDF (89 kB)
Influence of valence band absorption on the threshold characteristics of long-wavelength InAs lasers
N. A. Gun'ko, G. G. Zegrya, N. V. Zotova, Z. N. Sokolova, N. M. Stus', and V. B. Khalfin
Full Text: PDF (296 kB)
Influence of plasma treatment of the surface of silicon carbide on the characteristics of buried-gate junction field-effect transistors
P. A. Ivanov, O. I. Kon'kov, V. N. Panteleev, and T. P. Samsonova
Full Text: PDF (64 kB)The content contained herein is maintained and curated by the Preservation Department.This record is revised and maintained by the content administrators from the Cataloging & Metadata Department
Semiconductors V. 32, I. 09
No full textSemiconductors -- September 1998
Volume 32, Issue 9, pp. 917-1028
Correlation between the temperature dependence of the band gap and the temperature dependence of the enthalpy of semiconductor crystals
A. F. Revinskii
Full Text: PDF (115 kB)
Formation of donor centers upon annealing of dysprosium- and holmium-implanted silicon
O. V. Aleksandrov, A. O. Zakhar'in, N. A. Sobolev, E. I. Shek, M. I. Makoviichuk, and E. O. Parshin
Full Text: PDF (63 kB)
Normal lattice vibrations and the crystal structure of anisotropic modifications of boron nitride
S. V. Ordin, B. N. Sharupin, and M. I. Fedorov
Full Text: PDF (177 kB)
Physical properties of CuxAg1 – xIn5S8 single crystals and related surface-barrier structures
I. V. Bodnar', E. A. Kudritskaya, I. K. Polushina, V. Yu. Rud', and Yu. V. Rud'
Full Text: PDF (89 kB)
Optical reflection in Pb0.78Sn0.22Te doped to 3 at. % with indium
A. N. Veis and S. A. Nemov
Full Text: PDF (50 kB)
Electrical properties of silicon, heat-treated at 530 °C with subsequent electron bombardment
V. B. Neimash, V. M. Siratskii, A. N. Kraichinskii, and E. A. Puzenko
Full Text: PDF (87 kB)
The effect of antisite defects on the band structure and dielectric function of In1 – xGaxSb solid solutions
V. G. Deibuk and V. I. Studenets
Full Text: PDF (96 kB)
Pressure dependence of the dielectric and optical properties of wide-gap semiconductors
S. Yu. Davydov and S. K. Tikhonov
Full Text: PDF (68 kB)
Optical properties of silicon-doped (100) GaAs layers grown by molecular-beam epitaxy
V. G. Mokerov, Yu. V. Fedorov, A. V. Guk, G. B. Galiev, V. A. Strakhov, and N. G. Yaremenko
Full Text: PDF (73 kB)
Mobility of charge carriers in double-layer PbTe/PbS structures
O. A. Aleksandrova, R. Ts. Bondokov, I. V. Saunin, and Yu. M. Tairov
Full Text: PDF (108 kB)
Many-body effects and electron tunneling in metal-insulator-p-type semiconductor structures
G. M. Min'kov, A. V. Germanenko, and O. É. Rut
Full Text: PDF (82 kB)
Current transport in porous p-Si and Pd-porous Si structures
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
Full Text: PDF (77 kB)
Determining surface recombination rates in epitaxial layers of n-CdxHg1 – xTe from measurements of the planar magnetoresistance and relaxation times for nonequilibrium charge carriers
P. A. Borodovskii, A. F. Buldygin, and V. S. Varavin
Full Text: PDF (83 kB)
Physical model and results of numerical simulation of the degradation of a Si/SiO2 structure as a result of annealing in vacuum
G. V. Gadiyak and J. H. Stathis
Full Text: PDF (85 kB)
The effect of a nonmonotonic potential profile on edge magnetic states
E. B. Gorokhov, D. A. Romanov, S. A. Studenikin, V. A. Tkachenko, and O. A. Tkachenko
Full Text: PDF (258 kB)
Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma
I. A. Karpovich, A. V. Anshon, and D. O. Filatov
Full Text: PDF (86 kB)
Localized states near the band gap of GaAs caused by tetrahedral arsenic clusters
S. N. Grinyaev and V. A. Chaldyshev
Full Text: PDF (158 kB)
Weak-field magnetoresistance of two-dimensional electrons in In0.53Ga0.47As/InP heterostructures in the persistent photoconductivity regime
D. D. Bykanov, A. M. Kreshchuk, S. V. Novikov, T. A. Polyanskaya, and I. G. Savel'ev
Full Text: PDF (142 kB)
Energy spectrum of a nonideal quantum well in an electric field
O. L. Lazarenkova and A. N. Pikhtin
Full Text: PDF (169 kB)
Effect of the quantum-dot surface density in the active region on injection-laser characteristics
A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, Yu. M. Shernyakov, M. V. Maksimov, A. F. Tsatsul'nikov, B. V. Volovik, A. V. Lunev, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
Full Text: PDF (76 kB)
Powerful far-infrared radiation of hot holes in a strained two-dimensional InGaAs/AlGaAs structure
Yu. L. Ivánov, S. A. Morozov, V. M. Ustinov, and A. E. Zhukov
Full Text: PDF (42 kB)
Composition and porosity of multicomponent structures: porous silicon as a three-component system
L. V. Belyakov, T. L. Makarova, V. I. Sakharov, I. T. Serenkov, and O. M. Sreseli
Full Text: PDF (68 kB)
Charge limit effects in emission from GaAs photocathodes at high optical excitation intensities
B. I. Reznikov and A. V. Subashiev
Full Text: PDF (195 kB)
Use of two low-temperature emitters to determine the cutoff wavelength of the photosensitivity of infrared photodetectors
V. V. Vasil'ev and Yu. P. Mashukov
Full Text: PDF (77 kB)
Spectral and mode characteristics of InAsSbP/InAsSb/InAsSbP lasers in the spectral region near 3.3 µm
A. A. Popov, V. V. Sherstnev, and Yu. P. Yakovlev
Full Text: PDF (218 kB)
Photocurrent amplification in Au/SiO2/n-6H-SiC MOS structures with a tunnel-thin insulator
I. V. Grekhov, M. I. Veksler, P. A. Ivanov, T. P. Samsonova, and A. F. Shulekin
Full Text: PDF (52 kB)
Vladimir Idelevich Perel' (On His 70th Birthday)
Full Text: PDF (87 kB)Archived web conten
Semiconductors V. 31, I. 11
No full textSemiconductors -- November 1997
Volume 31, Issue 11, pp. 1101-1215
Anisotropic thermocouples article
A. A. Snarskii, A. M. Pal'ti, and A. A. Ashcheulov
Full Text: PDF (286 kB)
Low-energy nonparabolicity and condenson states in In4Se3 crystals
D. M. Bercha, L. Yu. Kharkhalis, A. I. Bercha, and M. Shnajder
Full Text: PDF (153 kB)
Tunneling effects in light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with quantum wells
V. E. Kudryashov, K. G. Zolin, A. N. Turkin, A. É. Yunovich, A. N. Kovalev, and F. I. Manyakhin
Full Text: PDF (131 kB)
Electron-structural metastability of cationic donor centers in GaAs
D. E. Onopko, A. I. Ryskin, and N. T. Bagraev
Full Text: PDF (92 kB)
Optical properties of thin n-Pb1 – xSnxSe/BaF2 epitaxial layers in the plasmon–phonon interaction region
A. A. Kopylov, V. A. Moshnikov, and A. N. Kholodilov
Full Text: PDF (135 kB)
Position of antimony impurity atoms in a PbTe lattice, determined by emission Mössbauer spectroscopy
V. F. Masterov, F. S. Nasredinov, S. A. Nemov, P. P. Seregin, N. N. Troitskaya, and S. I. Bondarevskii
Full Text: PDF (47 kB)
Extraction of charge carriers in semiconductors with a monopolar component of the photoconductivity
A. I. Vlasenko, Z. K. Vlasenko, and A. V. Lyubchenko
Full Text: PDF (100 kB)
Photoluminescence of n-type ZnSe crystals doped with donor and acceptor impurities from a LiCl salt melt
G. N. Ivanova, V. A. Kasiyan, and D. D. Nedeoglo
Full Text: PDF (84 kB)
Effect of band-gap narrowing on the diffusion of charged impurities in semiconductors
B. S. Sokolovskii and L. S. Monastyrskii
Full Text: PDF (82 kB)
Photoconductivity of CuInSe2 films
V. Yu. Rud' and Yu. V. Rud'
Full Text: PDF (62 kB)
Relaxation properties of a metal–chalcogenide glassy semiconductor
V. T. Avanesyan, V. A. Bordovskii, and R. A. Castro
Full Text: PDF (42 kB)
Electrical and photoelectric properties of an anisotypic Pb0.93Sn0.07Se/PbSe heterojunction
T. A. Gavrikova and V. A. Zykov
Full Text: PDF (90 kB)
Excitonic electroluminescence of 6H-SiC p–n structures obtained by sublimation epitaxy
A. A. Lebedev, N. K. Poletaev, and M. Z. doKarmo
Full Text: PDF (63 kB)
Passivation of GaAs in alcohol solutions of ammonium sulfide
V. N. Bessolov, E. V. Konenkova, M. V. Lebedev, and D. R. T. Zahn
Full Text: PDF (105 kB)
Heating of a two-dimensional electron gas by the electric field of a surface acoustic wave
I. L. Drichko, A. M. D'yakonov, V. D. Kagan, A. M. Kreshchuk, T. A. Polyanskaya, I. G. Savel'ev, I. Yu. Smirnov, and A. V. Suslov
Full Text: PDF (175 kB)
Optical spectroscopy of two-dimensional electronic states in modulation-doped N-AlGaAs/GaAs heterostructures
A. V. Guk, V. É. Kaminskii, V. G. Mokerov, Yu. V. Fedorov, and Yu. V. Khabarov
Full Text: PDF (158 kB)
Effect of the spin-orbit interaction on the optical spectra of an acceptor in a semiconductor quantum dot
A. F. Polupanov, V. I. Galiev, and M. G. Novak
Full Text: PDF (161 kB)
Photoluminescence of porous gallium arsenide
D. N. Goryachev and O. M. Sreseli
Full Text: PDF (68 kB)
Polarization memory in an oxidized porous SiC layer
A. M. Danishevskii, A. Yu. Rogachev, V. B. Shuman, and E. G. Guk
Full Text: PDF (86 kB)
Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3µm
T. N. Danilova, A. P. Danilova, O. G. Ershov, A. N. Imenkov, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev
Full Text: PDF (89 kB)
Influence of valence band absorption on the threshold characteristics of long-wavelength InAs lasers
N. A. Gun'ko, G. G. Zegrya, N. V. Zotova, Z. N. Sokolova, N. M. Stus', and V. B. Khalfin
Full Text: PDF (296 kB)
Influence of plasma treatment of the surface of silicon carbide on the characteristics of buried-gate junction field-effect transistors
P. A. Ivanov, O. I. Kon'kov, V. N. Panteleev, and T. P. Samsonova
Full Text: PDF (64 kB)Archived web conten
Semiconductors V. 38, I. 07
No full textSemiconductors -- July 2004
Volume 38, Issue 7, pp. 737-861
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Interphase Interactions and Features of Structural Relaxation in TiBx–n-GaAs (InP, GaP, 6H-SiC) Contacts Subjected to Active Treatment
N. S. Boltovets, V. N. Ivanov, R. V. Konakova, Ya. Ya. Kudrik, O. S. Litvin, P. M. Litvin, and V. V. Milenin
pp. 737-741 Full Text: PDF (392 kB)
Local Symmetry of the Pb1 – xSnxSe Lattice near the Zero-Gap State
E. S. Khuzhakulov
pp. 742-744 Full Text: PDF (54 kB)
Promotion of Metallurgical Reactions at the Ni–SiC Interface by Irradiation with Protons
V. V. Kozlovskii, P. A. Ivanov, D. S. Rumyantsev, V. N. Lomasov, and T. P. Samsonova
pp. 745-750 Full Text: PDF (75 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Study of the Electrical Properties of CdxHg1 – xTe
P. V. Biryulin, V. I. Kosheleva, and V. I. Turinov
pp. 751-757 Full Text: PDF (98 kB)
Formation of Electrically Active Centers in Silicon Irradiated with Electrons and Then Annealed at Temperatures of 400–700°C
E. P. Neustroev, S. A. Smagulova, I. V. Antonova, and L. N. Safronov
pp. 758-762 Full Text: PDF (64 kB)
The Role of Trapping Levels of Nonequilibrium Electrons during the Formation of Pinning Centers for Domain Walls in the Magnetic Semiconductor CdCr2Se4
A. A. Abdullaev
pp. 763-768 Full Text: PDF (78 kB)
Electrical Properties and Limiting Position of the Fermi Level in InSb Irradiated with Protons
V. N. Brudnyi, V. M. Boiko, I. V. Kamenskaya, and N. G. Kolin
pp. 769-774 Full Text: PDF (97 kB)
Anomalous Solubility of Implanted Nitrogen in Heavily Boron-Doped Silicon
D. I. Tetelbaum, E. I. Zorin[dagger], and N. V. Lisenkova
pp. 775-777 Full Text: PDF (35 kB)
Specific Thermoelectric Properties of Lightly Doped Bi2(TeSe)3 Solid Solutions
P. P. Konstantinov, L. V. Prokof'eva, Yu. I. Ravich, M. I. Fedorov, and V. V. Kompaniets
pp. 778-781 Full Text: PDF (63 kB)
Specific Features of Electron Spin Resonance in 4H-SiC in the Vicinity of the Insulator–Metal Phase Transition: II. Analysis of the Width and Shape of Lines
A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, and E. N. Mokhov
pp. 782-787 Full Text: PDF (83 kB)
Localization of a Longitudinal Autosoliton in InSb
I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev
pp. 788-790 Full Text: PDF (68 kB)
Piezospectroscopic Study of the Emission Band of n-GaAs:S Peaked at about 1.2 eV
A. A. Gutkin and M. A. Reshchikov
pp. 791-795 Full Text: PDF (67 kB)
Hysteresis in Ag2Te near and within the Phase Transition Region
S. A. Aliev
pp. 796-799 Full Text: PDF (60 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Resistance of Proton-Irradiated GaAs Photodetectors to Combined Gamma and Neutron Radiation
A. V. Murel', S. V. Obolenskii, A. G. Fefelov, and E. V. Kiseleva
pp. 800-806 Full Text: PDF (83 kB)
Radiation Resistance of Transistor- and Diode-Type SiC Detectors Irradiated with 8-MeV Protons
N. B. Strokan, A. M. Ivanov, N. S. Savkina, A. A. Lebedev, V. V. Kozlovskii, M. Syvajarvi, and R. Yakimova
pp. 807-811 Full Text: PDF (77 kB)
LOW-DIMENSIONAL SYSTEMS
Nonlinear Properties of Phototropic Media on the Basis of CuxSe Nanoparticles in Quartz Glass
S. A. Zolotovskaya, N. N. Posnov, P. V. Prokosin, K. V. Yumashev, V. S. Gurin, and A. A. Alexeenko
pp. 812-817 Full Text: PDF (90 kB)
Radiative Recombination in Ge+-Implanted SiO2 Films Annealed under Hydrostatic Pressure
I. E. Tyschenko and L. Rebohle
pp. 818-823 Full Text: PDF (91 kB)
The Effect of Acoustic Phonon Confinement on Electron Scattering in GaAs/AlxGa1 – xAs Superlattices
S. I. Borisenko
pp. 824-829 Full Text: PDF (75 kB)
Kapitsa Effect in Crystals with Superlattices
P. V. Gorskii
pp. 830-832 Full Text: PDF (39 kB)
Optical and Structural Properties of InAs Quantum Dot Arrays Grown in an InxGa1 – xAs Matrix on a GaAs Substrate
N. V. Kryzhanovskaya, A. G. Gladyschev, S. A. Blokhin, Yu. G. Musikhin, A. E. Zhukov, M. V. Maksimov, N. D. Zakharov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. Werner, F. Guffart, and D. Bimberg
pp. 833-836 Full Text: PDF (182 kB)
Mechanism of Dicke Superradiance in Semiconductor Heterostructures
L. Ya. Karachinsky, I. I. Novikov, N. Yu. Gordeev, and G. G. Zegrya
pp. 837-841 Full Text: PDF (66 kB)
Manifestation of Size-Related Quantum Oscillations of the Radiative Exciton Recombination Time in the Photoluminescence of Silicon Nanostructures
A. V. Sachenko, Yu. V. Kryuchenko, I. O. Sokolovskii, and O. M. Sreseli
pp. 842-848 Full Text: PDF (93 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Ultraviolet Luminescence of ZnO Infiltrated into an Opal Matrix
V. M. Masalov, É. N. Samarov, G. I. Volkodav[dagger], G. A. Emel'chenko, A. V. Bazhenov, S. I. Bozhko, I. A. Karpov, A. N. Gruzintsev, and E. E. Yakimov
pp. 849-854 Full Text: PDF (98 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Leakage Currents over the Surface of CdHgTe-Based Photodiodes
P. V. Biryulin, V. I. Turinov, and E. B. Yakimov
pp. 855-861 Full Text: PDF (162 kB)Archived web conten
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