198,874 research outputs found
A. Di Bartolomeo, F. Giubileo, M. Sarno, C. Altavilla, D. Sannino, L. Iemmo, D. Mancusi, F. Bobba, A.M. Cucolo, P. Ciambelli
No full textCAD-oriented HEMT models from noise and scattering measurements
No full textThe simultaneous determination of noise, gain and scattering parameters by means of a computer-driven noise figure test-set allows the rapid and accurate characterization of some samples of HEMTs of the same series. An equivalent circuit model representing the behavior of the typical device then is extracted by means of a decomposition approach. Comparison between the model performance and the measured parameters of all devices are reported for the FHR 02FH (by Fujitsu). The modeling procedure is oriented to CAD of (M)MIC low noise amplifiers
Simultaneous determination of transistor noise, gain and scattering parameters for amplifier design through noise figure measurements only
No full textA method for measurement of losses in the noise-matching microwave network while measuring transistor noise parameters
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The determination of noise, gain and scattering parameters of microwave transistors (HEMTs) using only an automatic noise figure test-set
No full textA computer-assisted noise parameter test-set for the characterization of microwave transistors in terms of noise, gain and scattering parameters
No full textDetermination of microwave transistor noise and gain parameters through noise-figure measurements only
No full textAn automated measuring system for the simultaneous determination of noise, gain and scattering parameters of HEMTs
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