1,721,591 research outputs found
Slim Mesh: 12-years follow-up study on mid-term results in 120 cases including 58 obese.
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”SLIM-MESH”: a new laparoscopic technique for the treatment of abdominal wall hernias. The first mid-term resuts.
No full textSLIM-MESH”: single operation with multiple slim-meshes for multiple spaced ventral hernias in the same patient. 12-year follow-up long-term results in 8 cases.
No full text”Slim-Mesh” technique: risultati a breve-medio termine su 22 casi di ernia gigante e massiva della parete addominale
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Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Electronic transport properties of SiGe alloys and heterostructures grown by Sb assisted MBE.
No full textElectronic transport properties have been measured in thin pseudomorphic SiGe alloys and heterostructures, grown by surfactant mediated epitaxy (SME). in order to investigate the unintentional doping effects caused by Sb, used as surfactant. In alloy films. we measured at 300 K, a Hall mobility (mu(H) = 20 cm(2) V-1 s(-1)) at least one order of magnitude lower than the undoped material (mu(H) = 100 cm(2) V-1 s(-1)), grown in similar conditions, but without surfactant. At low temperatures (40 K < T < 75 K) we obtained mu(H) values of about 3.6 x 10(4) cm(2) V-1 s(-1) for SME grown material and up to 5.5 x 10(4) cm(2) V-1 S-1. for undoped ones. Above 75 K. all the alloy samples showed a mu(H) decrease with the temperature Steeply than the T-1.5 dependence. Moreover, in undoped materials we observed two distinct power law exponents. In SME (SimGen)(p) heterostructures we measured mu(H) values generally lower than 100 cm(2) V-1 s(-1) at 300 K. due to the Sb high doping level. The strong doping effect caused by Sb in SME SiGe films suggests the use of different surfactant elements or alternative growth techniques in order to fabricate Si-Ge heterostructure based devices
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