1,721,600 research outputs found
Modeling radiation damage in TCAD
The aim of this work is to develop a TCAD radiation damage model at a device level, enablinga predictive insight on the electrical behaviour of detectors and aiming at their ultimate perfor-mance optimization for the operation at HL-LHC expected fluences (e.g. greater than 2.0×10161 MeV equivalent neutrons/cm2). Our approach aims at keeping the number of fitting parame-ters as low as possible, at the same time accounting for new experimental evidences of relevanteffects at these very high fluences (e.g. charge multiplication and avalanche effects). A physi-cally grounded approach is being pursued, aiming at devising a not over-specific modelling whilekeeping predictive capabilities on the device behavior fabricated by different vendors (e.g. withdifferent technology flavors) and in different operating conditions, e.g. at different fluences, tem-peratures and biasing voltages. The model development follows a test campaign with a twofoldgoal: from one hand, the relevant technology parameters such as oxide charge and interface trapstates as a function of the irradiation dose have been measured. On the other hand, DC and ACmeasurements on gate-controlled diodes and MOS capacitors can be used as reference for TCADsimulation models validation purpose. The complete bulk and surface radiation damage modelcan be exploited for the analysis of the active behavior of different classes of new generationdetectors to be used in the future HEP experiments
Going Beyond Counting First Authors in Author Co-citation Analysis
The present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Chromosomal localization of murine ryanodine receptor genes RYR1, RYR2 and RYR3 by in situ hybridization.
Chromosomal localization of murine ryanodine receptor genes RYR1, RYR2, and RYR3 by in situ hybridization
In situ hybridization experiments were performed using complementary DNA probes to determine the location on murine chromosomes of the three genes of the ryanodine receptor/Ca2+ channel family: RYR1, RYR2, and RYR3. The skeletal ryanodine receptor, or type 1 (Ryr1), maps to bands 7A2-7A3; the cardiac ryanodine receptor, or type 2 (Ryr2), to 13A1-13A2; and type 3 (Ryr3) to 2E5-2F3
TCAD Modeling of Surface Radiation Damage Effects: A State-Of-The-Art Review
A comprehensive numerical model which accounts for surface damage effects induced by radiation on silicon particle detectors is presented with reference to the state-of-the-art Synopsys Sentaurus Technology CAD (TCAD) tool. The overall aim of this work is to present the “Perugia 2019 Surface” damage modeling scheme, fully implemented within the TCAD environment, which effectively describes the surface damage effects induced by radiation in silicon sensors relying on a limited number of parameters relevant for physics. To this end, extensive measurement campaigns have been recently performed on gated-diodes and MOS capacitors at Fondazione Bruno Kessler (FBK) in Italy, Hamamatsu Photonics (HPK) in Japan and Infineon Technologies (IFX) in Austria on both n-type and p-type substrates (with and without p-spray isolation implants), in order to extrapolate the relevant parameters which rule the surface damage effects. The integrated interface trap density and the oxide charge density, have been determined before and after X-ray irradiation with doses ranging from 0.05 to 100 Mrad(SiO2), for each specific foundry and technology flavor. The main guidelines of this study are the versatility and generality of the simulation approach
Numerical Simulation of Radiation Damage Effects in p-Type and n-Type FZ Silicon Detectors
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