1,720,970 research outputs found
Going Beyond Counting First Authors in Author Co-citation Analysis
Get PDFThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
Get PDF“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Get PDFWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Optimizing Malaria Control in Nigeria: A Comprehensive Review of LLIN Effectiveness and Policy Frameworks
Get PDFThis comprehensive literature review examines the effectiveness of Long-Lasting Insecticidal Nets (LLINs) and the policy frameworks governing their use in Nigeria, with the goal of optimizing malaria control strategies in the country. The review explores the scientific underpinnings of LLINs, evaluates their effect on malaria incidence, and examines the operational, sociocultural, and economic aspects that affect their use. It also examines Nigeria\u27s policy environment, assessing the creation, application, and efficacy of policies pertaining to LLIN. The summary of research results from several studies emphasizes the importance of LLINs in preventing malaria and the challenges associated with implementing policies in different Nigerian contexts. The review points out shortcomings in the way things are currently done and provides evidence-based suggestions for improving the distribution, use, and overall control of malaria of LLINs. This study contributes to the understanding of malaria control in Nigeria and provides actionable insights for policymakers, health practitioners, and stakeholders aiming to reduce the malaria burden and improve public health outcomes in the region
Développement de FET basés sur des matériaux à bande interdite ultra-large pour l'électronique de puissance haute tension
No full textWide Bandgap Semiconductors (WBG) such as SiC and GaN show superior material properties to Silicon. However, the even wider bandgap material or dielectric such as Aluminum Gallium Nitride (AlGaN) or Aluminium Nitride (AlN) material system gives the flexibility of creating heterojunctions while dramatically broadening the device design space for medium/high power conversion systems. This thesis will focus on the demonstration of Ultrawide Bandgap (UWBG) semiconductors for developing high-voltage FETs. In this context, an approach based on downsizing GaN channel thickness grown on bulk AlN substrates has been developed. The evolution of on-state current density and breakdown voltage has been realized with different GaN channel thicknesses. A high AlN lateral breakdown field of up to 10MV/cm has been experimentally demonstrated. On the other hand, the integration of bulk AlN substrates to current silicon foundries is challenging. Thus, it can be said that “ What can be done on silicon, will be done on Silicon.” Addressing this challenge, we took an approach toward the demonstration of novel AlGaN channel-based HFETs on Silicon for high-voltage applications. The impact of Al composition in the barrier and channel layers on the electrical and thermal performance of various AlGaN/AlGaN HFETs has been studied. Later, we demonstrate robust AlGaN channel HFETs on bulk AlN suitable for extreme power electronics with more than 2kV breakdown voltage. The major challenge for AlGaN-based HFETs is to develop ohmic contact to the channel addressing which we demonstrated high current density (>0.2 A/mm) Al-rich AlGaN channel HFETs on silicon with more than 4 MV/cm average transistor breakdown electric field. This ongoing development in AlGaN HFETs highlights a promising direction that potentially leads to more sustainable and efficient power electronic solutions with smaller device dimensions along with better high voltage/high-temperature operation capabilities.Les semi-conducteurs à large bande interdite (WBG) tels que le SiC et le GaN présentent des propriétés physiques supérieures à celles du silicium. Cependant, les matériaux ou diélectriques à bande interdite encore plus large, tels que le nitrure d'aluminium et de gallium (AlGaN) ou le nitrure d'aluminium (AlN), permettent de créer des hétérojonctions tout en élargissant considérablement les possibilités de conception des dispositifs pour les systèmes de conversion d'énergie à moyenne/haute puissance. Cette thèse se concentrera sur la démonstration de semi-conducteurs à bande passante ultra-large (UWBG) pour le développement de transistors à effet de champ (FET) à haute tension. Dans ce contexte, une approche basée sur la réduction de l'épaisseur du canal GaN a été développée sur des substrats d'AlN. L'évolution de la densité de courant à l'état passant et de la tension de claquage a été réalisée avec différentes épaisseurs de canaux GaN. Un champ de claquage latéral élevé de l'AlN allant jusqu'à 10MV/cm a été démontré expérimentalement. D'autre part, l'intégration de substrats d'AlN dans les fonderies de silicium actuelles est un défi. On peut donc dire que "ce qui peut être fait sur le silicium sera fait sur le silicium". Pour relever ce défi, nous avons adopté une approche visant à démontrer de nouveaux HFET à base de canaux AlGaN sur substrat de silicium pour des applications à haute tension. L'impact de la composition en Al des couches de barrière et du canal sur les performances électriques et thermiques de divers HFET AlGaN/AlGaN a été étudié. Par la suite, nous avons démontré la robustesse des HFET à canal AlGaN sur AlN massif, appropriés à l'électronique de puissance en conditions extrêmes et une tension d'opération supérieure à 2 kV. Le principal défi pour les HFET à base d'AlGaN est de minimiser les résistances de contacts de source et de drain. Nous avons pu démontré une densité de courant élevée (> 0,2 A/mm) ainsi que des transistors à canal AlGaN riche en Al sur substrat de silicium avec un champ électrique de claquage moyen supérieur à 4 MV/cm. . Ces résultats mettent en évidence une approche prometteuse qui pourrait potentiellement conduire à des solutions pour une électronique de puissance plus durable et plus efficace avec des dimensions de dispositifs réduites ainsi que des capacités de fonctionnement à haute tension/haute température accrus
Développement de FET basés sur des matériaux à bande interdite ultra-large pour l'électronique de puissance haute tension
No full textWide Bandgap Semiconductors (WBG) such as SiC and GaN show superior material properties to Silicon. However, the even wider bandgap material or dielectric such as Aluminum Gallium Nitride (AlGaN) or Aluminium Nitride (AlN) material system gives the flexibility of creating heterojunctions while dramatically broadening the device design space for medium/high power conversion systems. This thesis will focus on the demonstration of Ultrawide Bandgap (UWBG) semiconductors for developing high-voltage FETs. In this context, an approach based on downsizing GaN channel thickness grown on bulk AlN substrates has been developed. The evolution of on-state current density and breakdown voltage has been realized with different GaN channel thicknesses. A high AlN lateral breakdown field of up to 10MV/cm has been experimentally demonstrated. On the other hand, the integration of bulk AlN substrates to current silicon foundries is challenging. Thus, it can be said that “ What can be done on silicon, will be done on Silicon.” Addressing this challenge, we took an approach toward the demonstration of novel AlGaN channel-based HFETs on Silicon for high-voltage applications. The impact of Al composition in the barrier and channel layers on the electrical and thermal performance of various AlGaN/AlGaN HFETs has been studied. Later, we demonstrate robust AlGaN channel HFETs on bulk AlN suitable for extreme power electronics with more than 2kV breakdown voltage. The major challenge for AlGaN-based HFETs is to develop ohmic contact to the channel addressing which we demonstrated high current density (>0.2 A/mm) Al-rich AlGaN channel HFETs on silicon with more than 4 MV/cm average transistor breakdown electric field. This ongoing development in AlGaN HFETs highlights a promising direction that potentially leads to more sustainable and efficient power electronic solutions with smaller device dimensions along with better high voltage/high-temperature operation capabilities.Les semi-conducteurs à large bande interdite (WBG) tels que le SiC et le GaN présentent des propriétés physiques supérieures à celles du silicium. Cependant, les matériaux ou diélectriques à bande interdite encore plus large, tels que le nitrure d'aluminium et de gallium (AlGaN) ou le nitrure d'aluminium (AlN), permettent de créer des hétérojonctions tout en élargissant considérablement les possibilités de conception des dispositifs pour les systèmes de conversion d'énergie à moyenne/haute puissance. Cette thèse se concentrera sur la démonstration de semi-conducteurs à bande passante ultra-large (UWBG) pour le développement de transistors à effet de champ (FET) à haute tension. Dans ce contexte, une approche basée sur la réduction de l'épaisseur du canal GaN a été développée sur des substrats d'AlN. L'évolution de la densité de courant à l'état passant et de la tension de claquage a été réalisée avec différentes épaisseurs de canaux GaN. Un champ de claquage latéral élevé de l'AlN allant jusqu'à 10MV/cm a été démontré expérimentalement. D'autre part, l'intégration de substrats d'AlN dans les fonderies de silicium actuelles est un défi. On peut donc dire que "ce qui peut être fait sur le silicium sera fait sur le silicium". Pour relever ce défi, nous avons adopté une approche visant à démontrer de nouveaux HFET à base de canaux AlGaN sur substrat de silicium pour des applications à haute tension. L'impact de la composition en Al des couches de barrière et du canal sur les performances électriques et thermiques de divers HFET AlGaN/AlGaN a été étudié. Par la suite, nous avons démontré la robustesse des HFET à canal AlGaN sur AlN massif, appropriés à l'électronique de puissance en conditions extrêmes et une tension d'opération supérieure à 2 kV. Le principal défi pour les HFET à base d'AlGaN est de minimiser les résistances de contacts de source et de drain. Nous avons pu démontré une densité de courant élevée (> 0,2 A/mm) ainsi que des transistors à canal AlGaN riche en Al sur substrat de silicium avec un champ électrique de claquage moyen supérieur à 4 MV/cm. . Ces résultats mettent en évidence une approche prometteuse qui pourrait potentiellement conduire à des solutions pour une électronique de puissance plus durable et plus efficace avec des dimensions de dispositifs réduites ainsi que des capacités de fonctionnement à haute tension/haute température accrus
Dispelling the Myths Behind First-author Citation Counts
Get PDFWe conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
koamabayili/VECTRON-author-checklist: VECTRON author checklist
No full textWe have done our best to complete the author checklist relating to the use of animals in the hut study. Note that the objective for the hut study was to evaluate the IRS treatment applications for residual efficacy against Anopheles mosquitoes, including the local An. coluzzii mosquito population. Cows were only used to attract mosquitoes into the huts and no tests were carried out directly on the cows. The author checklist is intended for use with studies where experiments are carried out on animals, which is why we have had such difficulty in completing this for the hut study, as many of the questions do not relate to how the cows were used
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