1,720,968 research outputs found
Going Beyond Counting First Authors in Author Co-citation Analysis
Get PDFThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
Get PDF“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Get PDFWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Dispelling the Myths Behind First-author Citation Counts
Get PDFWe conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
koamabayili/VECTRON-author-checklist: VECTRON author checklist
No full textWe have done our best to complete the author checklist relating to the use of animals in the hut study. Note that the objective for the hut study was to evaluate the IRS treatment applications for residual efficacy against Anopheles mosquitoes, including the local An. coluzzii mosquito population. Cows were only used to attract mosquitoes into the huts and no tests were carried out directly on the cows. The author checklist is intended for use with studies where experiments are carried out on animals, which is why we have had such difficulty in completing this for the hut study, as many of the questions do not relate to how the cows were used
Line-Tunneling iTFET with Overlapping Gate-on-Source and Drain Schottky Contact and SiGe-Pocket for Steep Subthreshold Swing and High ON-Current
No full textThe current semiconductor technology node is constantly evolving, and scaling faces many challenges, such as the need to consider increasingly low power budgets and difficulties in controlling doping concentrations to ideal levels. These factors have led to a decline in electrical performance. Therefore, in order to reduce operating voltage and minimize power consumption, the Tunnel Field-Effect Transistor (TFET) has emerged as an option among semiconductor devices based on silicon materials. While TFETs have been subject to extensive research in academia, there are still some non-ideal characteristics, such as low ON-current or subthreshold swing unable to go below 60 mV/decade. To address these issues, we propose two architectures: the Line-Tunneling iTFET with Overlapping Gate-on-Source and Drain Schottky Contact (SGO iTFET) and the Pocket-SGO iTFET with Overlapping Gate-on-Source and Drain Schottky Contact and SiGe-Pocket.
The SGO iTFET utilizes fully overlapped source and gate metals to effectively utilize the energy band difference between the gate-controlled inversion layer and the source metal control region, generating line tunneling current. Compared to the conventional point tunneling mechanism in TFETs, the SGO iTFET offers superior gate control capability and smaller average subthreshold swing. Additionally, due to the overlapping nature of the source and gate metals, the SGO iTFET significantly reduces the footprint occupied by the source, thus reducing area costs. Furthermore, by utilizing the Schottky contact formed between the semiconductor and metal, the P-type semiconductor forms an N-type inversion layer on the metal contact surface, replacing the traditional ion implantation process step and greatly reducing the thermal cost required by the fabrication process. Optimization results show that the SGO iTFET exhibits performance with an ON-current of 1.28 \uc3 10-7 A/\uce\ubcm, a switch current ratio of 2.97 \uc3 107, and an average subthreshold swing of 33.1 mV/dec at VD = 0.2 V.
The Pocket-SGO iTFET, an improved version of the SGO iTFET, aims to address the shortcomings of insufficient ON-current and relatively high average subthreshold swing. Research has found that replacing the region where electron tunneling occurs with a lower bandgap material, such as silicon-germanium (SiGe), can shorten the band-to-band tunneling distance between the inversion layer and the body region, increasing the carrier concentration generated by line tunneling. This, in turn, enhances the ON-current and reduces the subthreshold swing. Simulation results demonstrate that the Pocket-SGO iTFET exhibits performance with an ON-current of 1.81 \uc3 10-6 A/\uce\ubcm, a switch current ratio of 1.34 \uc3 109, and an average subthreshold swing of 16.2 mV/dec at VD = 0.2 V. This indicates that the designed Pocket-SGO iTFET features low subthreshold swing and a high switch current ratio, making it suitable for applications in the Internet of Things (IoT), low-power domains, as well as future semiconductor industry research and development in the 5G era
Author-wise bibliometric analysis based on entropy.
No full textAuthor-wise bibliometric analysis based on entropy.</p
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