9,723 research outputs found
High quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs
Get PDFSchottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage. Here we show that electrodeposited Ni-Ge and NiGe/Ge Schottky diodes on highly doped Ge show low off current, which might make them suitable for SB p-MOSFETs. The Schottky diodes showed rectification of up to 5 orders in magnitude. At low forward biases the overlap of the forward current density curves for the as deposited Ni/n-Ge and NiGe/n-Ge Schottky diodes indicates Fermi-level pinning in the Ge band gap. The SB height for electrons remains virtually constant at 0.52 eV (indicating a hole barrier height of 0.14 eV) under various annealing temperatures. The series resistance decreases with increasing annealing temperature in agreement with four point probe measurements indicating the lower specific resistance of NiGe as compared to Ni, which is crucial for high drive current in SB p-MOSFETs. We show by numerical simulation that by incorporating such high quality Schottky diodes in the source/drain of a Ge channel PMOS, highly doped substrate could be used to minimize the subthreshold source to drain leakage current
Cyclic Tests of Four Two-Story Narrow Steel Plate Shear Walls. Part 1: Analytical Studies and Specimen Design
No full textA Multi-Variable Fuzzy Controller Design For An Optical Disk File Compound Actuator Servo
No full textHigh-quality NiGe/Ge diodes for Schottky barrier MOSFETs
No full textSchottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source–drain leakage. Here, we show that electrodeposited Ni–Ge and NiGe/Ge Schottky diodes on highly doped Ge show low off current, which might make them suitable for SB-MOSFETs. The Schottky diodes showed rectification of up to five orders in magnitude. At low forward biases, the overlap of the forward current density curves for the as-deposited Ni/n-Ge and NiGe/n-Ge Schottky diodes indicates Fermi-level pinning in the Ge bandgap. The SB height for electrons remains virtually constant at ∼0.52 eV (indicating a hole barrier height of ∼0.14 eV) under various annealing temperatures. The series resistance decreases with increasing annealing temperature in agreement with four-point probe measurements indicating the lower specific resistance of NiGe as compared with Ni, which is crucial for high drive current in SB-MOSFETs. We show by numerical simulation that by incorporating such high-quality Schottky diodes in the source/drain of a Ge channel PMOS, highly doped substrate could be used to minimize the subthreshold source to drain leakage current
Comparison of veterinary medical education systems between Taiwan and the United States.
No full text
Lithium-responsive genes and gene networks in bipolar disorder patient-derived lymphoblastoid cell lines
No full textLithium (Li) is the mainstay mood stabilizer for the treatment of bipolar disorder (BD), although its mode of action is not yet fully understood nor is it effective in every patient. We sought to elucidate the mechanism of action of Li and to identify surrogate outcome markers that can be used to better understand its therapeutic effects in BD patients classified as good (responders) and poor responders (nonresponders) to Li treatment. To accomplish these goals, RNA-sequencing gene expression profiles of lymphoblastoid cell lines (LCLs) were compared between BD Li responders and nonresponders with healthy controls before and after treatment. Several Li-responsive gene coexpression networks were discovered indicating widespread effects of Li on diverse cellular signaling systems including apoptosis and defense response pathways, protein processing and response to endoplasmic reticulum stress. Individual gene markers were also identified, differing in response to Li between BD responders and nonresponders, involved in processes of cell cycle and nucleotide excision repair that may explain part of the heterogeneity in clinical response to treatment. Results further indicated a Li gene expression signature similar to that observed with clonidine treatment, an α2-adrenoceptor agonist. These findings provide a detailed mechanism of Li in LCLs and highlight putative surrogate outcome markers that may permit for advanced treatment decisions to be made and for facilitating recovery in BD patients.</p
Response to the Round Table on Why Did We Choose to Industrialize? Montreal 1819–1849
No full textAuthor Robert C.H. Sweeny responds to comments on his award-winning book, Why Did We Choose to Industrialize? Montreal 1819–1849.L’auteur Robert C.H. Sweeny répond aux commentaires de son livre récompensé, Why Did We Choose to Industrialize? Montreal 1819–1849
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