1,721,059 research outputs found
GaN grown on SiC by MOCVD: Material for HEMT applications
No full textItem does not contain fulltextRadboud University Nijmegen, The Netherlands, 22 april 2008Promotor : Larsen, P.K.147 p
Extended defects in GaN: Selective etching and optical properties
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26978_extedeing.pdf (Publisher’s version ) (Open Access)RU Radboud Universiteit Nijmegen, 26 september 2005Promotor : Larsen, P.K. Co-promotor : Weijher, J.X, 129 p
Experimental and numerical aspects of GaN growth by HVPE
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29812.pdf (Publisher’s version ) (Open Access)Radboud University, 24 oktober 2006Promotor : Larsen, P.K. Co-promotor : Hageman, P.R.XII, 118 p
III-V compound solar cells: Material studies and development of thin-film and tandem cells
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72258.pdf (Publisher’s version ) (Open Access)Radboud University Nijmegen, Applied Materials Science, 14 april 2008Promotor : Larsen, P.K.175 p
GaN growth on sapphire by MOCVD - Material for HEMT structures
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27418.pdf (Publisher’s version ) (Open Access)This thesis focuses on growth and basic characterization of AlGaN/GaN based high electron mobility structures. In order to provide theoretical background for the presented research, the basic physical properties of III-V nitrides and the characteristics of the HEMT structures are discussed. Additionally, properties of substrates used for GaN epitaxy are describedRU, 05 april 2006Promotor : Larsen, P.K. Co-promotor : Hageman, P.R.VI, 115 p
The epitaxial Lift-Off Process: Parameter Studies and Solar Cell Application
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19480_epitliofp.pdf (Publisher’s version ) (Open Access)The epitaxial lift-off (ELO) process is a technique that allows the separation of a single crystalline film from the substrate it was deposited on via the etching of an intermediate AlAs release layer. For this purpose, the extreme selectivity of hydrofluoric acid (HF) for AlAs over GaAs is employed. The technique has a large potential for optoelectronic applications, because it can lead to several benefits. Among these are cost reduction via a substrate reuse, increased power output of devices because of better cooling capabilities and the integration of III/V based devices with silicon circuitry. ELO, however, can only be implemented on an industrial scale in device processing if the rate at which substrate and epilayers are separated is sufficiently high. The lateral etch rate of the process has therefore been under serious investigation during the last years. In the present thesis several of the relevant process parameters have been investigated, leading to a better understanding of the process. Furthermore, the area of the released devices and the etch rate at which this occurs have increased dramatically. In order to show that epitaxial lift-off does not have a negative effect on devices that are subjected to the procedure, ELO solar cells are compared to identical structures that are fabricated while they are still on their substrate. It was found that the ELO solar cells show some extra benefits, which enables them to even outperform the expensive substrate cellsRU Radboud Universiteit Nijmegen, 08 september 2004Promotor : Larsen, P.K. Co-promotor : Schermer, J.J.XII, 145 p
Going Beyond Counting First Authors in Author Co-citation Analysis
Get PDFThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
Get PDF“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Get PDFWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
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