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    Thermomechanical Properties Of The Amorphous Carbon Nitride Thin Films

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    In this work we investigated thermomechanical properties of carbon nitride thin films. The thermal expansion coefficient and the elastic constants were studied as a function of the nitrogen concentration. Drastic changes of the film structure were observed as a result of the nitrogen incorporation, varied from 0 to 7%. It was observed that the thermal expansion coefficient has a significant increase from about 2 to 9 × 10-6K-1. This results were attributed to the increase in the concentrations of sp2 sites and clusters sizes. © 2003 Elsevier Science Ltd. All rights reserved.3405/08/15553555Liu, A., Cohen, L., (1989) Science, 245, p. 841Li, D., Chung, Y.-W., Wong, M.-S., Sproul, W.D., (1993) J. Appl. Phys., 74, p. 219Sjostrom, H., Stafstrom, S., Boman, M., Sundgren, J.-E., (1995) Phys. Rev. Lett., 75, p. 1336Grill, A., (2001) Diamond Relat. Mater., 10, p. 234De Lima M.M., Jr., Lacerda, R.G., Vilcarromero, J., Marques, F.C., (1999) J. Appl. Phys., 86, p. 4936Hoffman, R.W., (1966) Physics of Thin Films, 3Ferrari, A.C., (2003) EMIS Datareviews Series IEE, , The Institute of Electrical Engineers, UK, Chapter XX, in pressHammer, P., Lacerda, R.G., Alvarez, F., (2001) J. Appl. Phys., 84, p. 7852Rodil, S.E., Ferrari, A.C., Robertson, J., Milne, W.I., (2001) J. Appl. Phys., 89, p. 542

    Influence Of Stress On The Field Emission Properties Of Amorphous Carbon Thin Films And Multiwall Carbon Nanotube-polymer Composites

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    The effects compressive stress on the field emission properties of amorphous carbon thin films and multiwall carbon nanotube (MWCN) polymer composites were investigated. In the study, the nanocrystalline films and MWNT composite thin films were subject to external stress by mechanical bending. The field emission results from C films with different intrinsic stresses were compared. The results showed that the threshold field increases with the increase in stress.194195Poa, C.H., Lacerda, R.G., Cox, D.C., Silva, S.R.P., Marques, F.C., (2002) Appl. Phys. Lett., 81, p. 85

    Thermal Expansion Dependence On The Sp2 Concentration Of Amorphous Carbon And Carbon Nitride

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    The coefficients of thermal expansion of hydrogenated amorphous carbon (a-C:H) and carbon nitride (a-CNx:H) were determined using the thermally induced bending technique. Amorphous carbon films were prepared with different sp2 concentrations by varying the bias voltage in a glow discharge system in methane atmosphere. Carbon nitride films (a-CN x:H) were deposited by introducing nitrogen gas. It was observed that the thermal expansion of a-C:H depends on the concentration of sp2 bonded carbon, increasing to the value of graphite as the sp2 concentration approaches 100%. Similar effect was also observed in the carbon nitride films. © 2004 Elsevier B.V. All rights reserved.338-3401 SPEC. ISS.499502Liu, A.M., Cohen, M., (1989) Science, 245, p. 841Muhl, S., Mendez, J.M., (1999) Diamond Relat. Mater., 8, p. 1809Badzian, A., Badzian, T., (1999) Thin Solid Films, 354, p. 148Hellgren, N., Johansson, M.P., (1999) Phys. Rev. B, 59, p. 5162Cutiongco, E.C., Li, D., Chung, Y.W., (1996) J. Tribol., 118, p. 543Robertson, J., (2001) Thin Solids Films, 383, p. 81Lee, H.J., Zubeck, R., Hollars, D., Lee, J.K., Smallen, M., Chao, A., (1993) J. Vac. Sci. Technol. A, 11 (6), p. 3007Wang, J.S., Sugimura, Y., Evans, A.G., Tredway, W.K., (1998) Thin Solid Films, 325, p. 163Demichelis, F., Pirri, C.F., Tagliaferro, A., Benedetto, G., Boarino, L., Spagnolo, R., Dunlop, E., Gissler, W., (1993) Diamond Relat. Mater., 2, p. 890De Lima Jr., M.M., Lacerda, R.G., Vilcarromero, J., Marques, F.C., (1999) J. Appl. Phys., 86 (9), p. 4936Marques, F.C., Vilcarromero, J., Lacerda, R.G., (2000) Appl. Phys. A, 71 (6), p. 633Champi, A., Lacerda, R.G., Marques, F.C., (2003) Microelectron. J, 34 (5-8), p. 553Lacerda, R.G., Marques, F.C., (1998) Appl. Phys. Lett., 73 (5), p. 617Oliver, W.C., Pharr, G.M., (1992) J. Mater. Res., 7, p. 1564Hoffman, R.W., (1970) Physics of Non-metallic Thin Films, B-14. , New York: PlenumPickrell, D.J., Kline, K.A., Taylor, R.E., (1994) Appl. Phys. Lett., 64 (18), p. 2353Nelson, J.B., Riley, D.P., (1945) Proc. Phys. Soc., 57 (6), p. 477Hu, J., Yuan, P., Lieber, C.M., (1998) Phys. Rev. B, 57, pp. R3185Rodil, S.E., Milne, W.I., Robertson, J., Brown, L.M., (2000) Appl. Phys. Lett., 77, p. 1458Ferrari, A.C., Robertson, J., (2000) Phys. Rev. B, 6

    Esr Investigation Of Graphite-like Amorphous Carbon Films Revealing Itinerant States As The Ones Responsible For The Signal

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    The origin of paramagnetic centers in graphite-like amorphous carbon is investigated. The films were deposited by the ion beam assisted deposition (IBAD) and have a concentration of sp2 sites of about 90% and zero energy band gap. The density of the film and the electrical resistivity are close to these of crystalline graphite. However, the hardness and stress of the films are similar to those of diamond-like carbon. Electron spin resonance (ESR) performed at the X-band (9.4 GHz) revealed an unexpected low density of paramagnetic centers, ascribed to conduction electrons with a g-value of about 2.003. © 2008 Elsevier B.V. All rights reserved.35419-2521352137Robertson, J., (1996) PRB, 53 (24), p. 16302Barklie, R.C., (2001) Diam. Relat. Mater., 10, p. 174Lacerda, R.G., Hammer, P., Lepiensky, C.M., Alvarez, F., Marques, F.C., (2001) J. Vac. Sci. Technol. A, 19 (3), p. 971Poa, C.H., Lacerda, R.G., Cox, D.C., Silva, S.R.P., Marques, F.C., (2002) Appl. Phys. Lett., 81 (5), p. 853Sercheli, M.S., Kopelevich, Y., Ricardo da Silva, R., Torres, J.H.S., Rettori, C., (2002) Solid State Commun., 121, p. 579Von Bardeleben, H.J., Cantin, J.L., Zeinert, A., Racine, B., Zellama, K., Hai, P.N., (2001) Appl. Phys. Lett., 78 (19), p. 2843Hoinkis, M., Tober, E.D., White, R.L., Crowder, M.S., (1992) Appl. Phys. Lett., 61 (22), p. 265

    On The Structure Of Argon Assisted Amorphous Carbon Films

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    We report a study of amorphous carbon films prepared by ion beam assisted deposition (IBAD). X-ray and ultraviolet photoelectron spectroscopy were used for probing the photoelectron core level and valence band of the films, respectively. Raman spectra, stress, and film density were also determined. The intrinsic compressive stress and plasmon energy increase sharply for argon assisting energies up to 100 eV, and vary slightly for energy in the 100 eV to 650 eV range. The highest stress (>10 GPa) and plasmon energy (29.5 eV), achieved at about 400 eV argon assisting energy, are of the same order as those reported for highly tetrahedral amorphous carbon films. However, structural investigations indicate that the material is composed of a highly compressed and dense sp2 network.93796800Robertson, J., (1991) Progr. Solid State Chem., 21, p. 199MacKenzie, D.R., Muller, D., Pailthope, B.A., (1991) Phys. Rev. Lett., 67, p. 773Lifshitz, Y., Kasi, S.R., Rabalais, J.W., Eckstein, W., (1990) Phys. Rev. B, 41, p. 10468Robertson, J., (1993) Diamond Relat. Mater., 2, p. 984Cuomo, J.J., Doyle, J.P., Brutley, J., Liu, J.C., (1991) J. Vac. Sci. Technol. A, 9, p. 2210Gissler, W., Hammer, P., Haupt, J., (1994) Diamond Relat. Mater., 3, p. 770Andre, B., Rossi, F., Van Veen, A., Mijnarends, P.E., Schut, H., Delplancke, M.P., (1994) Thin Solid Films, 241, p. 171Hammer, P., Victoria, N.M., Alvarez, F., (1998) J. Vac. Sci. Technol. A, 16, p. 2491De Lima Jr., M.M., Lacerda, R.G., Vilcarromero, J., Marques, F.C., (1999) J. Appl. Phys., 86, p. 4636Marques, F.C., Lacerda, R.G., Odo, G.Y., Lepienski, C.M., (1998) Thin Solid Films, 332, p. 113Fallon, P.J., Veerasamy, V.S., Davis, C.A., Robertson, J., Amaratunga, G.A.J., Milne, W.I., Koskinen, J., (1993) Phys. Rev. B, 48, p. 4777Lifshitz, Y., Lempert, G.D., Grossman, E., Avigal, I., Uzan-Saguy, C., Kalish, R., Kulik, J., Rabalais, J.W., (1995) Diamond Relat. Mater., 4, p. 318Tay, B.K., Shi, X., Tan, H.S., Yang, H.S., Sun, Z., (1998) Surf. Coat. Technol., 105, p. 155Schafer, J., Ristein, J., Graupner, R., Ley, L., Stephann, U., Frauenheim, Th., Veerasamy, V.S., Ehrhardt, H., (1996) Phys. Rev. B, 53, p. 7762Amaratunga, G.A.J., Chhowalla, M., Keily, C.J., Alexandru, I., Devenish, R.M., (1996) Nature (London), 383, p. 321Lacerda, R.G., Marques, F.C., (1998) Appl. Phys. Lett., 73 (5), p. 617Lynch, R.W., Drickamer, H.G., (1966) J. Chem. Phys, 44, p. 18

    Going Beyond Counting First Authors in Author Co-citation Analysis

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    The present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed

    Thermal Expansion Coefficient Of Amorphous Carbon Nitride Thin Films Deposited By Glow Discharge

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    The thermal expansion coefficient of a-CNx:H thin films was determined by the thermally induced bending technique. The films were deposited by glow discharge under methane and nitrogen atmosphere, and analyzed by FTIR and Raman spectroscopies, nanohardness, and stress measurements. Drastic changes of the film structure were observed as a result of the nitrogen incorporation, from 0 to 7%. The increase of nitrogen concentration reduces the deposition rate, stress, hardness, and the elastic constant of the films. It was also observed that the thermal expansion coefficient has a significant increase from approximately 2-9×10-6/K, which was associated with the increase in the sp2 concentration induced by the N incorporation, and with the increase in the concentration of C-N bonds. In spite of that, stable and thick (∼ 2 μm) films were deposited at moderate deposition rate (0.3 nm/s), relatively high hardness (13 GPa), and low stress (0.6 GPa). © 2002 Elsevier Science B.V. All rights reserved.420-421200204Liu, A., Cohen, L., (1989) Science, 245, p. 841Li, D., Chung, Y.-W., Wong, M.-S., Sproul, W.D., (1993) J. Appl. Phys., 74, p. 219Sjostrom, H., Stafstrom, S., Boman, M., Sundgren, J.-E., (1995) Phys. Rev. Lett., 75, p. 1336Lacerda, R.G., Marques, F.C., (1998) Appl. Phys. Lett., 73, p. 617Lacerda, R.G., Marques, F.C., Freire F.L., Jr., (1999) Diamond Relat. Mater., 8, p. 495Lacerda, R.G., Stolojan, V., Cox, D.C., Silva, S.R.P., Marques, F.C., (2002) Diamond Relat. Mater., 11, p. 980Oliver, W.C., Pharr, G.M., (1992) J. Mat. Res., 7, p. 1564De Lima M.M., Jr., Lacerda, R.G., Vilcarromero, J., Marques, F.C., (1999) J. Appl. Phys., 86 (9), p. 4936Stoney, G.C., (1909) Proc. R. Soc. Lond., A32, p. 172Hoffman, R.W., (1966) Physics of Thin Films, 3. , New York: Academic PressHoffman, R.W., (1970) Physics of Non-metallic Thin Films, B-14. , New York: Plenum PressFreire F., Jr., (1997) Jpn J. Appl. Phys., 36, p. 4886Franceschini, D.F., Achete, C.A., Freire F., Jr., (1992) Appl. Phys. Lett., 60, p. 3229Kaufman, J.H., Metin, S., (1989) Phys. Rev. B, 39, p. 13053Chattopadhyay, S., Chen, L.C., Wu, C.T., Chen, K.H., Wu, J.S., Chen, Y.F., Lehmann, G., Hess, P., (2001) Appl. Phys. Lett., 79 (3), p. 332Das, D., Chen, K.H., Chattopadhyay, S., Chen, L.C., (2002) J. Appl. Phys., 91 (8), p. 4944Ferrari, A.C., Robertson, J., (2000) Phys. Rev. B, 61, p. 14095Friedmann, T.A., Sullivan, J.P., Knapp, J.A., Tallant, D.R., Follstaedt, D.M., Medlin, D.L., Mirkarimi, P.B., (1977) Appl. Phys. Lett., 71, p. 3820Jacobsohn, J.G., Freire F.L., Jr., Franceschini, D.F., Lacerda, M.M., Mariotto, G., (1999) J. Vac. Sci. Technol. A, 17 (2), p. 545Wang, J.S., Sugimura, Y., Evans, A.G., Tredway, W.K., (1998) Thin Solid Films, 325, p. 16

    The Subimplantation Model For Diamond-like Carbon Films Deposited By Methane Gas Decomposition

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    In this work, the formation of hard a-C:H films deposited on the cathode of an r.f. sputtering system through the decomposition of methane gas was explained using the subimplantation model. Even though in a r.f. plasma deposition the ions striking the films surface are not monoenergetic, the stress data match the theoretical model proposed by C.A. Davis. The stress versus bias plot shows a behavior similar to those already obtained for ta-C and ta-C:H films, which are prepared using monoenergetic ion beam.82-5495499Davis, C.A., (1993) Thin Solid Films, 226, p. 30Robertson, J., (1993) Diamond Relat. Mater., 2, p. 984Fallon, P.J., Veerasamy, V.S., Davis, C.A., Robertson, J., Amaratunga, G.A.J., Milne, W.I., Koskinen, J., (1993) Phys. Rev. B, 48, p. 4777Weiler, M., Sattel, S., Jung, K., Ehrhardt, H., Veerasamy, V.S., Robertson, J., (1994) Appl. Phys. Lett., 64, p. 2797De Lima M.M., Jr., Lacerda, R.G., Vilcarromero, J., Marques, F.C., to be publishedHoffman, R.W., (1966) Physics on Thin Films, 3. , in: G. Hass, R.E. Thun (Eds.), Academic Press, New YorkWeiler, M., Sattel, S., Giessen, T., Jung, K., Ehrhardt, H., Veerasamy, V.S., Robertson, J., (1996) Phys. Rev. B, 53, p. 1594Lacerda, R.G., Marques, F.C., (1998) Appl. Phys. Lett., 73 (5), p. 617Zou, J.W., Reichelt, K., Schmidt, K., Dischler, B., (1989) J. Appl. Phys., 65 (10), p. 3915Jiang, X., Reichelt, K., Stritzker, B., (1989) J. Appl. Phys., 66 (12), p. 5805Robertson, J., (1996) J. Non-Cryst. Solids, 198-200, p. 614. , 199Robertson, J., (1997) Diamond Relat. Mater., 6, p. 212Schwan, J., Ulrich, S., Batori, V., Ehrhardt, H., Silva, S.R.P., (1996) J. Appl. Phys., 80, p. 440Tamor, M., Vassel, W., (1994) J. Appl. Phys., 76, p. 446Prawer, S., Nugent, K.W., Lifshitz, Y., Lampert, G.D., Grossman, E., Kulik, J., Kalish, R., (1996) Diamond Relat. Mater., 5, p. 433Robertson, J., (1994) Pure Appl. Chem., 66, p. 1789Kohler, K., Coburn, J.W., Horne, D.E., Kay, E., (1985) J. Appl. Phys., 57, p. 59Chapman, B., (1980) Glow Discharge Processes, , Wiley, New YorkMoller, W., (1993) Appl. Phys. a, 56, p. 527Kleber, R., Weiler, M., Kruger, A., Sattel, S., Kunz, G., Jung, K., Ehrbardt, H., (1993) Diamond Relat. Mater., 2, p. 246Walters, J.K., Honeybone, P.J.R., Huxley, D.W., Newport, R., Howells, W.S., (1994) Phys. Rev. B, 50, p. 831. , and refs. therei

    Variations on the Author

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    “Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
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