64 research outputs found

    Interfacial conduction in organic ferroelectric memory diodes

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    Solution-processed memory diodes based on phase separated blends of ferroelectric and semiconducting polymers in the low resistance on-state operate similar to a vertical field-effect transistor at the pinch-off. Numerical simulations have shown that the performance of the diode is dominated by the conduction of charge carriers at the interface between the semiconductor and ferroelectric phases. Here, we present an unambiguous experimental demonstration of the charge injection process in the diodes. We employ a modified diode structure, wherein the electrode in contact with the semiconductor phase has been intentionally removed. Even in the absence of an electrical contact with the semiconductor phase, the diode still shows resistance switching. We provide numerical simulations that reproduce the experimentally measured I-V characteristics and therefore confirm interfacial conduction in the diodes. Furthermore, we discuss the implications of the proposed memory structure particularly in the performance of light-emitting diodes with built-in memory functionality, i.e., MEMOLEDs.Novel Aerospace Material

    Role of Interface in Ferroelectric Polymer based Memory Diodes

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    Organic electronic devices have the potential to alter our everyday lives with their unique characteristics, such as flexibility, stretchability and low-cost. Among the envisioned devices are non-volatile memories for applications in contactless identification transponders and smart labels. This thesis investigates the operation of such a memory device that uses phase-separated blends of a ferroelectric and semiconducting polymer in a diode configuration. The blend film is composed of columns of semiconductor domains that run continuously through the ferroelectric polymer matrix from the bottom to the top electrode. Polarization of the ferroelectric polymer upon application of appropriate electric fields (greater than coercive field), leads to the modulation of the injection barrier at the metal-semiconductor contact.28 The diode exhibits a bistable rectifying current-voltage characteristic. Numerical models have been proposed to describe the device physics of the memory diodes. This thesis provides a potential solution for ambient processing and operation of the memory diodes along with providing the experimental proof of the proposed operation mechanism of the memory diodes. Moreover, current driven memory devices have been demonstrated. Based on tuneable injection barrier, MEMOLED, a light emitting diode with an inherent ferroelectric switch, has been demonstrated. The advantage of a built-in rectifying switch in the construction of the MEMOLED is to present a non-emissive OFF state and an emissive non-volatile ON state. However, the current efficiency is low as compared to that of pristine semiconductor polymer based OLEDs, and the retention time of the emissive state is short. Here, it is shown that charge trapping in the ferroelectric phase could be a possible reason for the lower performance of the MEMOLEDs. Finally, organic ferroelectric tunnel junctions, based on ultra-thin film of P(VDF-TrFE), with colossal tunneling electroresistance are demonstrated.viii, 90 Seite

    Порівняльне дослідження теплових та оптичних властивостей бінарних нанокомпозитів на основі PANI

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    Нанорозмірні матеріали та нанокомпозити, які складаються з металів, провідних полімерів, вуглецевих нанотрубок, використовуються у величезній кількості додатків завдяки своїм оптичним, механічним, тепловим та хімічним властивостям. Робота полягає у виготовленні нанокомпозитів PANI/rGO і PANI/MWCNT та вивченні їх оптичних і теплових характеристик. У статті детально описано методологію синтезу та відповідне оптично-теплове дослідження нанокомпозитів PANI/rGO та PANI/MWCNT з 8 ваг. % rGO/MWCNT у чистому PANI з використанням процесу хімічної окислювальної полімеризації in-situ. Для дослідження морфології поверхні синтезованих нанокомпозитів були використані скануюча електронна мікроскопія (SEM) та інфрачервона спектроскопія з перетворенням Фур'є (FTIR). Для вимірювання теплової стабільності нанокомпозитів PANI/rGO і PANI/MWCNT використовували термогравіметричний аналіз (TGA). Дослідження спектрофотометрії в УФ та видимій областях спектру виявили зменшення значень ширини забороненої зони в конкретних нанокомпозитних зразках PANI/rGO (8 wt. %) через посилення взаємодії між rGO-легованим PANI при молекулярному з'єднанні та відповідними алотропами вуглецю. Дослідження показало, що зразки PANI/rGO мають чудові структурні, теплові та оптичні характеристики, що робить їх придатними для досліджень і розробок у сфері накопичувачів енергії та її додатків.Nanoscale materials and nanocomposites composed of metals, conducting polymers, carbon nanotubes, because of their optical, mechanical, thermal, and chemical properties, are used in a huge number of applications. Current work includes the fabrication of PANI/rGO, as well as PANI/MWCNT nanocomposites and the study of their optical and thermal characteristics. The article describes in detail the methodology of synthesis and relative optical and thermal study of PANI/MWCNT and PANI/rGO nanocomposites with 8 wt. % rGO/MWCNT in pure PANI using an in-situ chemical oxidation polymerization process. Scanning electron microscopy (SEM) and Fourier Transform Infrared (FTIR) spectroscopy were used to investigate the surface morphology of synthesized nanocomposites. Thermogravimetric analysis (TGA) was used to measure the thermal stability of PANI/rGO and PANI/MWCNT nanocomposites. UV-Visible spectrophotometry studies revealed a decrease in band gap values in specific PANI/rGO (8 wt. %) nanocomposite samples due to the enhanced significant interaction between rGO-doped PANI at molecular conjugation and the corresponding carbon allotropes. The study showed that PANI/rGO specimens have excellent structural, thermal, and optical characteristics, making them suitable for research and development in the field of energy storage devices and their applications

    Cell-Type-Specific Mitochondrial Quality Control in the Brain: A Plausible Mechanism of Neurodegeneration

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    Neurodegeneration is an age-dependent progressive phenomenon with no defined cause. Aging is the main risk factor for neurodegenerative diseases. During aging, activated microglia undergo phenotypic alterations that can lead to neuroinflammation, which is a well-accepted event in the pathogenesis of neurodegenerative diseases. Several common mechanisms are shared by genetically or pathologically distinct neurodegenerative diseases, such as excitotoxicity, mitochondrial deficits and oxidative stress, protein misfolding and translational dysfunction, autophagy and microglia activation. Progressive loss of the neuronal population due to increased oxidative stress leads to neurodegenerative diseases, mostly due to the accumulation of dysfunctional mitochondria. Mitochondrial dysfunction and excessive neuroinflammatory responses are both sufficient to induce pathology in age-dependent neurodegeneration. Therefore, mitochondrial quality control is a key determinant for the health and survival of neuronal cells in the brain. Research has been primarily focused to demonstrate the significance of neuronal mitochondrial health, despite the important contributions of non-neuronal cells that constitute a significant portion of the brain volume. Moreover, mitochondrial morphology and function are distinctly diverse in different tissues; however, little is known about their molecular diversity among cell types. Mitochondrial dynamics and quality in different cell types markedly decide the fate of overall brain health; therefore, it is not justifiable to overlook non-neuronal cells and their significant and active contribution in facilitating overall neuronal health. In this review article, we aim to discuss the mitochondrial quality control of different cell types in the brain and how important and remarkable the diversity and highly synchronized connecting property of non-neuronal cells are in keeping the neurons healthy to control neurodegeneration

    Colossal Tunneling Electroresistance in Co-Planar Polymer Ferroelectric Tunnel Junctions

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    Ferroelectric tunnel junctions (FTJs) are ideal resistance-switching devices due to their deterministic behavior and operation at low voltages. However, FTJs have remained mostly as a scientific curiosity due to three critical issues: lack of rectification in their current-voltage characteristic, small tunneling electroresistance (TER) effect, and absence of a straightforward lithography-based device fabrication method that would allow for their mass production. Co-planar FTJs that are fabricated using wafer-scale adhesion lithography technique are demonstrated, and a bi-stable rectifying behavior with colossal TER approaching 106% at room temperature is exhibited. The FTJs are based on poly(vinylidenefluoride-co-trifluoroethylene) [P(VDF-TrFE)], and employ asymmetric co-planar metallic electrodes separated by &lt;20 nm. The tunneling nature of the charge transport is corroborated using Simmons direct tunneling model. The present work is the first demonstration of functional FTJs manufactured via a scalable lithography-based nano-patterning technique and could pave the way to new and exciting memory device concepts.</p

    Indian Agriculture in the New Economic Regime, 1971-2003: Empirics based on the Cobb Douglas Production Function

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    This paper reviews the trends in Indian Agriculture before and after the introduction of the economic reforms, and the advent of WTO regime. We employ the Cobb Douglas Production Function using the OLS specification to investigate the determinants of agricultural gross domestic product for the period 1970-71 to 2002-03, during pre and post-economic reforms to document the impact of policy change (post-1992) and India’s membership of the WTO (post-1995). Our empirical findings reveal that Indian agriculture sector has witnessed Decreasing Returns to Scale after the introduction of economic reforms, indicating that the input availability is under strain during the same period.Agriculture Gross Domestic Product, WTO, Economic Reforms, Trends, Determinants, Returns to Scale, Cobb Douglas Production Function, India

    Thinking Fast or slow? Understanding Answering Behavior Using Dual-Process Theory through Mouse Cursor Movements

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    Users’ underlying cognitive states govern their behaviors online. For instance, an extreme cognitive burden during live system use would negatively influence important user behaviors such as using the system and purchasing a product. Thus, inferring the user's cognitive state has practical significance for the commercialized systems. We use Dual-Process Theory to explain how the mouse cursor movements can be an effective measure of cognitive load. In an experimental study with five hundred and thirty-four subjects, we induced cognitive burden then monitored mouse cursor movements when the participants answered questions in an online survey. We found that participants' mouse cursor movements slow down when they are engaged in cognitively demanding tasks. With the newly derived measures, we were able to infer the state of heightened cognitive load with an overall accuracy of 70.22%. The results enable researchers to measure users' cognitive load with more granularity and present a new, theoretically sound method to assess the user's cognitive state
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