1,724,619 research outputs found
Ts. Dr. Khairil Azman produces NanoPearm to increase bitumen capacity for road pavement
Get PDFGAMBANG, 6 May 2021 - A Kuching-born lecturer, Ts. Dr. Khairil Azman Masri, 33, has produced Nanopearm - Nanosilica Modified Asphalt Binder, which is a product based on nanomaterials and bitumen to increase the capacity and durability of bitumen
Ts. Dr. Khairil Azman hasilkan NanoPearm tingkatkan keupayaan bitumen untuk turapan jalan raya
Get PDFGAMBANG, 6 Mei 2021 - Anak kelahiran Kuching, Sarawak, Ts. Dr. Khairil Azman Masri, 33, telah menghasilkan Nanopearm - Nanosilica Modified Asphalt Binder iaitu produk berasaskan bahan nano dan bitumen untuk meningkatkan keupayaan dan ketahanan bitumen
NITA Cosmetics / Nurafrina Balqis Khairil Azhar and Nurnadhirah Badrulaman
Get PDFNITA Cosmetics is established with a mission and vision to make each and every woman the best of beauty in terms of quality, efficacy, safety, sincerity and responsibility to satisfy all beauty needs and desires in their infinite diversity. We, Nur Afrina Balqis Binti Khairil Binti Khairil Azhar and Nur Nadhirah Binti Badrul Aman are the agent for NITA Cosmetics. NITA Cosmetics is an enterprise based in 10, Lorong Rahim Kajai 14, Taman Tun Dr Ismail, 60000 Kuala Lumpur, Wilayah Persekutuan Kuala Lumpur. Our target audience is women who love to wear makeup in their life. The range price of the lipsticks is between RM 35.00 to RM 46.00 per item. The price is affordable despite that the best quality of ingredients is used to ensure the quality guarantee of the products delivered to the customers. In this new era, we were told to lessen the contacts between people, therefore NITA Cosmetics decided to go with online banking and e-wallet payment methods. Thus, our customer can choose whatever payment method they find convenient to do so. Furthermore, Facebook accounts are also used by NITA Cosmetics to do teaser, hard sell and soft sell copywriting in order to encourage customers to buy our products. We provide any sufficient information, pictures and details for customers to refer to and to gain their trust toward our products before proceed to buy it
‘SAYA TIDAK PATAH SEMANGAT’- KHAIRIL AMINUDDIN ATHIR
Get PDFPULAU PINANG, 31 Ogos 2015 - Kegagalan untuk masuk ke mana-mana Institut Pengajian Tinggi
Awam (IPTA) selepas tamat Sijil Pelajaran Malaysia (SPM) dengan hanya 2A, tidak mematahkan
semangat Khairil Aminuddin Athir Bakhari,20 untuk meneruskan cita-citanya ke menara gading
dengan menyambung pengajian di peringkat Sijil Tinggi Pelajaran Malaysia (STPM).
Berbekalkan Purata Nilai Gred Kumulatif (CGPA) 3.75 dalam STPM, Khairil Aminuddin Athir diterima
masuk ke Universiti Sains Malaysia (USM) bagi mengikuti kursus Ijazah Sarjana Muda Sains
Kemasyarakatan
Fabrication of lateral silicon germanium heterojunction bipolar transistors
No full textThe fabrication of lateral SiGe heterojunction bipolar transistors requires the development of new processing stages, device design and modelling. In this work, techniques for cavity fabrication, surface preparation and con & ned selective epitaxial growth are developed and a new design of lateral SiGe heterojunction transistor is proposed. Two types of cavity were fabricated in this work, the open-sided cavity and the SOI cavity. The open-sided cavity allows confined growth to be carried out A-om a planar seed window, while the SOI cavity allows growth from a vertical (sidewall) seed. To ensure warp-6ee and rigid structures, the wall of the cavities has to be made 6om an LTO/nitride/LTO sandwich. For sacriScial etching, the use of dry (SFg) and wet etch (KOH) processes were found to be suitable for the removal of polysihcon/silicon sacrificial layer, however, the use of wet processing meant a higher probability of stiction. It is also shown that the fabrication of SOI cavities should include a silicon sidewall ripphng reduction step (using KOH), to create an epi-ready vertical seed. Silane-only selective epitaxy is found to give good quality epitaxial layers, however the growth thickness that can be achieved before selectivity is lost is limited by an incubation period of -30 minutes. In addition, the high growth temperature (980°C) is found to cause oxide pitting and etching at silicon/oxide sidewall areas. Furthermore, development for a selective silicon germanium process at low temperatures has so far led to non-selective growth. A new DCS/SiH4/H2 epitaxy process has been established that provides good quality selective epitaxial layers at between 750°C - 930°C. At 850°C, uniformity was found to be +/- 5%, with a vertical and lateral growth rate (G-om a planar seed) of 38 nm/min and 11 nm/min, respectively. Confined and unconfined lateral growth 6om a vertical seed of up to 0.5 ^im and 1 ^m, respectively, has been demonstrated. The epitaxy process, which has an activation energy of 2.4eV, was found to be largely unaffected by any local loading effects. In addition, silicon germanium epitaxial layers have also been successfully grown. As with the silane-only process, DCS/SiH4/H2 growth, selectivity is found to be lost after an incubation period, which at 850°C is close to 90 minutes. Based on the cavity and epitaxy processes that have been developed, a lateral SiCre heterojunction bipolar transistor has been proposed. From simulations, the design shows promise, with/r a n d f i g u r es of 2.0 and 8.0 GHz, respectively. With further development in the DCS/SiH^/Hz epitaxy process to allow zw j'zA/ doping, the design may achieve an/rand figure of 6.3 and 15.8 GHz, respectively. Further scaling and design optimisation is likely to yield high performance devices.</p
Khairil Anwar's Quick Files
No full textThe Quick Files feature was discontinued and it’s files were migrated into this Project on March 11, 2022. The file URL’s will still resolve properly, and the Quick Files logs are available in the Project’s Recent Activity
Hak asasi kanak-kanak: pendidikan formal di sekolah
Get PDFKoresponden BERNAMA – 6 April 2021 (Selasa)
Pengacara: Chad Le
Tetamu: Prof. Madya Dr Khairil Azmin Mokhtar
Pensyarah Undang-Undang, Perlembangan dan Hak Asas
Artikel KHAIRIL RAVID (18063080)
No full textThis Article describe about Konsep Dasar Administrasi Pendidika
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