6,561 research outputs found
The Future of Canadian Climate Policy — with Marc Lee
No full textMarc Lee is a Senior Economist at the Canadian Centre for Policy Alternatives\u27 BC Office. In addition to tracking federal and provincial budgets and economic trends, Marc has published on a range of topics from poverty and inequality to globalization and international trade to public services and regulation. Marc is the Co-Director of the Climate Justice Project, a research partnership with UBC\u27s School of Community and Regional Planning that examines the links between climate change policies and social justice.Resources:Climate Justice Project: www.policyalternatives.ca/projects/cli…tice-projectMarc Lee\u27s Posts on Policy Note: www.policynote.ca/author/marclee/Canadian Centre for Policy Alternatives: www.policyalternatives.ca/Marc\u27s Twitter: twitter.com/MarcLeeCCPA International Panel on Climate Change, 2021 report: www.ipcc.ch/report/ar6/wg1
Climate Justice & Inequality: The Future of Canadian Climate Policy — with Marc Lee
No full textMarc Lee is a Senior Economist at the Canadian Centre for Policy Alternatives\u27 BC Office. In addition to tracking federal and provincial budgets and economic trends, Marc has published on a range of topics from poverty and inequality to globalization and international trade to public services and regulation. Marc is the Co-Director of the Climate Justice Project, a research partnership with UBC\u27s School of Community and Regional Planning that examines the links between climate change policies and social justice.Resources: Climate Justice Project: https://www.policyalternatives.ca/projects/climate-justice-projectMarc Lee\u27s Posts on Policy Note: https://www.policynote.ca/author/marclee/Canadian Centre for Policy Alternatives: https://www.policyalternatives.ca/Marc\u27s Twitter: https://twitter.com/MarcLeeCCPA International Panel on Climate Change, 2021 report: https://www.ipcc.ch/report/ar6/wg1
The Effect of Electrostatic Screening on a Nanometer Scale Electrometer
No full textWe investigate the effect of electrostatic screening on a nanoscale silicon MOSFET electrometer. We find that screening by the lightly doped p-type substrate, on which the MOSFET is fabricated, significantly affects the sensitivity of the device. We are able to tune the rate and magnitude of the screening effect by varying the temperature and the voltages applied to the device, respectively. We show that despite this screening effect, the electrometer is still very sensitive to its electrostatic environment, even at room temperature.United States. Dept. of Energy (award DE-FG02-08ER46515)United States. Army Research Office (contract W911NF-07-D-0004
Contact-independent measurement of electrical Conductance of a Thin Film with a Nanoscale Sensor
No full textContact effects are a common impediment to electrical measurements throughout the fields of nanoelectronics, organic electronics, and the emerging field of graphene electronics. We demonstrate a novel method of measuring electrical conductance in a thin film of amorphous germanium that is insensitive to contact effects. The measurement is based on the capacitive coupling of a nanoscale metal-oxide-semiconductor field-effect transistor (MOSFET) to the thin film so that the MOSFET senses charge diffusion in the film. We tune the contact resistance between the film and contact electrodes and show that our measurement is unaffected. With the MOSFET, we measure the temperature and field dependence of the conductance of the amorphous germanium, which are fit to a model of variable-range hopping. The device structure enables both a contact-independent and a conventional, contact-dependent measurement, which makes it possible to discern the effect of the contacts in the latter measurement. This measurement method can be used for reliable electrical characterization of new materials and to determine the effect of contacts on conventional electron transport measurements, thus guiding the choice of optimal contact materials.United States. Army Research Office (contract W911 NF-07-D-0004)United States. Dept. of Energy (grant DE-FG02-08ER46515
Measuring Charge Transport in a Thin Solid Film Using Charge Sensing
No full textWe measure charge transport in a hydrogenated amorphous silicon (a-Si:H) thin film using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances even in the presence of blocking contacts. At high temperatures, where the resistance of the a-Si:H is not too large, the charge detection measurement agrees with a direct measurement of current. The device geometry allows us to probe both the field effect and dispersive transport in the a-Si:H using charge sensing and to extract the density of states near the Fermi energy.United States. Army Research Office (contract W911NF-07-D-0004)United States. Dept. of Energy (award DE-FG02-08ER46515
UKMARC AMC: Draft Rev 4.0: UK MARC format for archives and manuscripts control (UK MARC AMC)
No full textThis draft is the first attempt to establish a UK MARC specifically for Archives and Manuscripts Control since the British Library indicated that it would countenance such extensions to the national UK MARC format. In order to keep consistency with the general UK MARC format, standard UK MARC subject fields are not included in this document, since they should be taken from the latest version of the UK MARC manual. {A note of them should perhaps be included in UK MARC AMC.} {NB Text in braces is intended to be explanatory material for readers of this draft}. Certain other fields have not been included that might occasionally be used in the cataloguing of archival materials but would generally only be used for such materials in organizations which were combining archive
databases with library databases. This MARC version is intended for use with descriptions of archive or anuscript material that follow, or fit, the traditional style of cataloguing: we assume that these will normally relate
to paper or parchment originals. It is not intended for use with descriptions of other kinds of material. For these, fields may be drawn from the appropriate UK MARC document. MARC versions for use with archives in special formats should be developed, in order to complete the full range of facilities available to archivists and curators
MARC 21 para recursos contínuos
No full textTranslation and adaptation of the MARC 21 Format for Bibliographic Data, and MARC 21 Format for Holdings Data, Network Development and MARC Standards Office, Library of Congress, USA, by Angela Salles. Rio de Janeiro, 2010. 2 v. V.1 MARC 21 format for bibliographic data (updated until October 2010). V.2 MARC 21 format for data collection (Holdings) (updated until October 2008)
MARC 21 para recursos contínuos.
No full textTradução e adaptação de MARC 21 Format for Bibliographic Data e MARC 21 Format for Holdings Data, da Network Development and MARC Standards Office, da Library of Congress, USA, por Angela Salles
Friends of the Greenwood Library Presents Marc Leepson
No full textOn Tuesday, September 11, 2012 the Friends of the Janet D. Greenwood Library hosted its fall event, which featured an evening with Marc Leepson. Leepson is a journalist, historian and the author of seven books, including Lafayette: Lessons in Leadership from the Idealist General (Palgrave/Macmillan, 2011), a concise biography of the famed Marquis de Lafayette
The effect of surface conductance on lateral gated quantum devices in Si/SiGe heterostructures
No full textQuantum dots in Si/SiGe heterostructures are expected to have relatively long electron spin decoherence times, because of the low density of nuclear spins and the weak coupling between nuclear and electron spins. We provide experimental evidence suggesting that electron motion in a conductive layer parallel to the two-dimensional electron gas, possibly resulting from the donors used to dope the Si quantum well, is responsible for the well-known difficulty in achieving well-controlled dots in this system. Charge motion in the conductive layer can cause depletion on large length scales, making electron confinement in the dot impossible, and can give rise to noise that can overwhelm the single-electron charging signal. Results of capacitance versus gate bias measurements to characterize this conductive layer are presented.National Science Foundation (U.S.) ((PHY-0117795)National Science Foundation (U.S.) (DMR-0701386
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