8,617 research outputs found
Role of oxygen and nitrogen in n-type microcrystalline silicon carbide grown by hot wire chemical vapor deposition
No full textN-type microcrystalline silicon carbide (μc-SiC:H(n)) deposited by hot wire chemical vapor deposition provides advantageous opto-electronic properties for window layer material in silicon-based thin-film solar cells and silicon heterojunction solar cells. So far, it is known that the dark conductivity (σd) increases with the increase in the crystallinity of μc-SiC:H(n)films. However, due to the fact that no active doping source is used, the mechanism of electrical transport in these films is still under debate. It is suggested that unintentional doping by atmospheric oxygen (O) or nitrogen (N) contamination plays an important role in the electrical transport. To investigate the impact of O and N, we incorporated O and N in μc-SiC:H(n) films and compared the influence on the microstructural, electronic, and optical properties. We discovered that, in addition to increasing the crystallinity, it is also possible to increase the σd by several orders of magnitude by increasing the O-concentration or the N-concentration in the films. Combining a high concentration of O and N, along with a high crystallinity in the film, we optimized the σd to a maximum of 5 S/cm
Clues, flow channels, and cognitive states: an exploratory study of customer experiences with e-brokerage services
No full textPeer reviewe
A design for Six Sigma case study: creating an IT change management system for a mid-size accounting firm
No full textPeer reviewe
Introduction to the special section on cocreating the customer service experience with high tech and high touch
No full textPeer reviewe
Author Correction: A Satellite Imagery Dataset for Long-Term Sustainable Development in United States Cities
No full textCorrection to: Scientific Data, published online 04 December 2023 In this article the author name Jingtao Ding was incorrectly written as Jintao Ding. The original article has been corrected.</p
Ding: the life of Jay Norwood Darling
No full textThis is the bibliographic record of the book entitled Ding: the Life of Jay Norwood Darling that is in the NCTC Conservation Library collection. Bibliographic record: Personal Author: Lendt, David L. Title: Ding : the life of Jay Norwood Darling Edition: Iowa heritage collection ed. Publication info: Ames : Iowa State University Press, 1989, c1979. xi, 204 p., [60] p. of plates :NC ill. ; 22 cm. Series Title: (Iowa heritage collection
La dynamique de l´Art Ding Nzumguba Ibio
No full textnuloO trabalho trata de manifestações artísticas entre os Ding do Zaire, propondo contribuir para a tomada de consciência da natureza da arte negro-africana em geral através do caso particular desse complexo cultural. Situando o meio natural e social onde aflora a arte Ding, o autor realça o caráter de múltiplos significados de que se reveste, como proposta funcional, simbólica, mágico-religiosa e estética. Abordando vários aspectos da arte Ding (arquitetura, tecelagem, "poterie", escultura) o autor realça o papel do artista que, ao trabalhar com um fenômeno que não se configura como "arte pela arte", aparece essencialmente como símbolo da unidade, da concórdia e da paz comunitária.The Project examines the artistic manifestations among those of Ding of Zaire, proposing to talk the natural conscience of Black-African Art general through a particular case of this cultural complex. Citing a way natural and social where emerges the Ding Art, the author emphasizes the character of multiple meanings in with it has, like functional proposal, symbolic, magic religious, aesthetics. Examining various aspects of Ding Art (architecture, textile, ‘potterie’, sculpture) the author emphasizes the role of the artist who, to work a phenomena which doesn’t form itself “art of arts”, essentially appears like a symbol of unity, compromise and community peace
You ke tie jing: Liu juan. v.1
No full text夏鼎著.框18x13公分, 9行24字, 小字雙行同, 左右雙邊, 單黑魚尾, 版心上鐫書名, 中鐫卷次, 下鐫頁次."光緒二十二季春八月廣雅書局校刊"--內封面背頁.On double leaves, oriental style.Xia Ding zhu.Kuang 18x13 gong fen, 9 hang 24 zi, xiao zi shuang hang tong, zuo you shuang bian, dan hei yu wei, ban xin shang juan shu ming, zhong juan juan ci, xia juan ye ci."Guangxu er shi er ji chun ba yue Guang ya shu ju jiao kan"--Nei feng mian bei ye
Towards a Multi-scale Approach to the Simulation of Silicon Hetero-junction Solar Cells
No full textThe silicon hetero-junction (SHJ) technology holds the current efficiency record of 25.6% for silicon-based single junction solar cells and shows great potential to become a future industrial standard for high-efficiency crystalline silicon (c-Si) cells. One of the main advantages of this concept over other wafer based silicon technologies are the very high open-circuit voltages that can be achieved thanks to the passivation of contacts by thin films of hydrogenated amorphous silicon (a-Si:H). The a-Si:H/c-Si interface, while central to the technology, is still not fully understood in terms of transport and recombination across this nanoscale region, especially concerning the role of the different localized tail and defect states in the a-Si:H and at the a-Si:H/c-Si interface and of the band offsets and band bending induced by the heterostructure potential and the large doping, respectively. For instance, a consistent microscopic picture of transport and recombination processes with treatment of thermal and tunneling mechanisms on equal footing is lacking. On the other hand, there are new SHJ device architectures like thin wafers with light trapping structures [1] or interdigitated back contact (IBC) cells [2], which define additional requirements for the modelling approach concerning the integration of 3D optical and electrical simulations. This paper provides an overview over our current efforts in the creation of a multi-scale and multi-physics framework to deal with the challenges encountered in the simulation of SHJ solar cells
- …
