103,599 research outputs found
Método potenciodinâmico aplicado ao estudo da difusão iônica limitada por camada porosa em substratos de ITO
No full textDissertação (mestrado) - Universidade Federal de Santa Catarina, Centro de Ciências Físicas e Matemáticas, Programa de Pós-Graduação em Física, Florianópolis, 2013.Esta dissertação tem como objetivo estudar o comportamento do substrato transparente condutor composto por óxido de índio dopado com estanho (ITO) durante tratamento catódico em eletrólitos inertes de NaCl, KCl, KI e AlCl3, em diferentes concentrações possuindo a mesma força iônica e em seu pH natural. Após o tratamento é observada a formação de partículas esféricas metálicas de In-Sn, decorrentes da redução do ITO. A morfologia dos depósitos varia com o eletrólito usado e com a velocidade do processo de redução. Os resultados obtidos através dos estudos potenciodinâmicos dos eletrodos indicam um processo controlado por resistência ôhmica. O comportamento resistivo observado durante a formação da camada porosa metálica sugere a aplicação do modelo de resistência de camada porosa LPRM (do inglês Layer-Pore Resistance Model) para análise do processo. No entanto, o modelo LPRM, na forma como foi originalmente desenvolvido, não descreve bem o processo. Uma modificação ao modelo é proposta, a partir da qual, logra-se obter bons ajustes do modelo às curvas potenciodinâmicas. O conjunto de parâmetros extraído do ajuste de curvas obtidas com diferentes taxas de varredura mostra boa correlação com o crescimento da camada porosa e pode ser interpretado como uma medida do caminho difusivo que os íons do eletrólito necessitam percorrer para atingir a camada de ITO subjacente. A modificação da morfologia do substrato durante o processo de redução catódica foi caracterizada por microscopia eletrônica de varredura (MEV) e microscopia de força atômica (AFM). Da análise da rugosidade superficial, obtida das micrografias de AFM, extraiu-se o comprimento de correlação, que mede a granularidade da camada porosa. Usando conceitos simples de passeio aleatório, foi possível estabelecer uma relação entre o caminho difusivo iônico determinado eletroquimicamente, e a morfologia da camada porosa, para os diferentes eletrólitos utilizados.Abstract : This work investigates the behavior of transparent conducting substrates composed of indium tin oxide (ITO) during cathodic treatment in inert aqueous electrolytes (NaCl, KCl, KI e AlCl3), using different concentrations with same ionic force. The treatment causes the formation of spherical metallic particles of In-Sn, resulting from ITO reduction. It is possible to observe that the morphology of deposits is affected by the electrolyte composition and sweep rate. Potentiodynamic studies indicate a process controlled by Ohmic resistance. The resistive behavior observed during growth of the porous metallic layer suggests the application of the Layer-Pore Resistance Model (LPRM) to analyze the results. However, the LPRM model, in its original form, does not give a good description of the process. A modified version of the LPRM is proposed, which yields very good fits to the potentiodynamic curves. The set of fit parameters extracted from the curves, obtained at different scan rates, shows a good correlation with the growth of the porous layer, and could be interpreted as a measure of diffusion paths that ions must travel to reach the underlying ITO layer. The changes on morphology of the substrates during the cathodic reduction was characterized by scanning electron microscope (SEM) and atomic force microscope (AFM). From the roughness analysis obtained from the AFM micrographs, a correlation length was determined that describes the granularity of the porous layer. Using simple concepts of random walk, it was possible to establish a relationship between the ionic diffusion path determined electrochemically, and the morphology of porous layer, for the different electrolytes used
H. Ito: Ueber die Art der Wärmebildung nach Gehirnstich. Zeitschr. f. Biologie 38, N. F. 20, 63-226. 1899
No full textH. ITO: UEBER DIE ART DER WÄRMEBILDUNG NACH GEHIRNSTICH. ZEITSCHR. F. BIOLOGIE 38, N. F. 20, 63-226. 1899
Zeitschrift für Psychologie und Physiologie der Sinnesorgane (-)
Zeitschrift für Psychologie und Physiologie der Sinnesorgane (23) (a0006)
H. Ito: Ueber die Art der Wärmebildung nach Gehirnstich. Zeitschr. f. Biologie 38, N. F. 20, 63-226. 1899 (23) (p0225
Microptila orienthula Kjaerandsen and Ito
No full text<i>Microptila orienthula</i> Kjaerandsen and Ito <p>(Figs 1, 4 A, 5)</p> <p> <i>Microptila orienthula</i> Kjaerandsen and Ito 2009, 177–180, male, female, Japan (Hokkaido, Honshu); Nishimoto and Nishimoto 2014, 63, Japan (Honshu).</p> <p> <b>Male</b>. Length of each forewing and hind wing 1.6–2.2 mm and 1.4–1.8 mm, respectively (n = 4). Antennae each 19-segmented and 0.6–0.9 mm long (n = 4).</p> <p>Genitalia (Figs. 1 B–1G). Segment IX (IX) annular, dorsally with deep and wide triangular excision at anterior margin, posterior margin with shallow and wide concavity, transverse tergal bridge very narrow, dorsal midline about 1/10 as long as segment IX in dorsal view (Fig. 1 C); in ventral view (Fig. 1 D) anteroventral margin with shallow triangular concavity, posteroventral margin with deep wide concavity. Tergite X (t X) quadrate with large median triangular concavity caudally in dorsal view (Fig. 1 C), semimembranous and transparent, lateral margins lightly sclerotized. Subgenital plate (sg plate) semimembranous with slightly sclerotized lateral margins, twice as long as tergite X (Figs. 1 B, 1C), long ovate with tiny U- or V-shaped excavation caudally in dorsal view (Fig. 1 E). Inferior appendages (inf app) well developed, setose, without any branches, each with basal 2/3 stout, tapered in distal 1/3 (Figs. 1 B, 1D), apex in ventral view incurved and acute (Fig. 1 D), in ventromesal view (Fig. 1 F) basal 2/ 3 with longitudinal setose ridge mesally and apical 1/3 triangular with strongly sclerotized dorsomesal edge. Phallus elongate, with slender titillator (ti) arising near apical 1/3, wrapped around phallus 1.5 times (Fig. 1 G).</p> <p> <b>Female</b>. Length of each forewing and hind wing 1.3–1.8 mm and 1.3–1.6 mm, respectively (n = 4). Antennae each 18-segmented and 0.4–0.6 mm long (n = 4).</p> <p>Abdominal segments I–VII densely covered with long thick setae. Segment VII (VII) tergite and sternite fused laterally, conical in ventral view (Fig. 1 H). Segment VIII (VIII) almost as long as segment VII, often withdrawn into segment VII, ventroposterior margin slightly protruded in some specimens (Figs. 1 H–1J).</p> <p> <b>Specimens examined</b>. <b>Type specimens</b>: 3 males, 2 females, <b>Japan</b>, <b>Hokkaido</b>, Shiriuchi-cho, hygropetric zone beside Idesu-gawa, 12.vii.2008, T. Ito (CBM-ZI 135131–135135, on slides).</p> <p> <b>Additional records</b> (other than those of Kjaerandsen and Ito 2009): <b>Japan, Honshu, Niigata</b>: 42 males, 12 females, Itoigawa-shi, Kotaki-gawa, 300–400 m above sea level (a.s.l.), 14.viii.1998, T. Hattori. <b>Toyama</b>: 3 males, Nanto-shi, Taira-mura, Nashidani-gawa, 450 m a.s.l., 30.vii.1995, T. Hattori. <b>Shizuoka</b>: 10 males, 2 females, Shizuoka-shi, Nyujima, 400 m a.s.l., hygropetric zone, 5.vii.1989, T. Hattori; 10 males, same locality, 11.vi.1999, T. Hattori; 2 males, same locality, 18.vi.2001, T. Hattori; 18 males, 2 females, Shizuoka-shi, Yugashima, 400 m a.s.l., hygropetric zone, 30.viii.2005, T. Hattori; 3 males, 1 female, Shizuoka-shi, Akazawa, hygropetric zone, 2.ix.2009, T. Hattori; 1 male, same locality, 19.ix.2013, T. Hattori & T. Ito; 9 males, 4 females, Hamamatsu-shi, Komyo-san, 29.viii.2009, T. Torii. <b>Aichi</b>: 5 males, 2 females, Shinshiro-shi, Horai, 4.viii.1998, H. Nishimoto. <b>Shiga</b>: 2 males, Higashi-omi-shi, Eigenji, Kanzaki-gawa, hygropetric zone near Kazakoshi-bashi, 9.ix.2014, T. Ito; 8 males, 1 female, same locality, 11.vi.2016, T. Ito. <b>Shikoku</b>, Kochi: 2 males, Tosa-shimizu-shi, Akasho, small stream, 21.v.1999, T. Ito & A. Ohkawa. <b>Kyushu</b>, Nagasaki: 1 male, Isahaya-shi, Korai-cho, Todoroki-kyo, 18.ix.2000, A. Ohkawa. <b>Yakushima</b>: 1 male, 2 females, Nagata, Hamanaka, Nakano-bashi, 30.viii.1986, Y. Takemon; 1 female, unnamed tributary of Miyanoura-gawa, 10.v.2006, T. Ito.</p> <p> <b>Remarks</b>. The males of this species are distinguished from other congeneric species by the large, stout inferior appendages and long oval subgenital plate with tiny U- or V-shaped excavation apically.</p> <p> <b>Habitat</b> (Fig. 4 A). Adults of this species were collected from hygropetric zones and fast flowing streams with large rocks.</p> <p> <b>Distribution</b> (Fig. 5). Japan (Hokkaido, Honshu, Shikoku, Kyushu, Yakushima). New to Shikoku, Kyushu and Yakushima.</p> <p> <b>Japanese name</b>. Mikuro-himetobikera.</p>Published as part of <i>Ito, Tomiko, 2017, The genus Microptila Ris (Trichoptera, Hydroptilidae) in Japan, pp. 104-112 in Zootaxa 4232 (1)</i> on pages 105-107, DOI: 10.11646/zootaxa.4232.1.7, <a href="http://zenodo.org/record/292743">http://zenodo.org/record/292743</a>
Antecedents of the ITO Charter and their Relevance for the Uruguay Round
No full textThe author discusses the origins of the International Trade Organization ( ITO ) and the International Monetary Fund ( IMF ). Next, the author addresses the issue of legalism versus pragmatism in the administration of the ITO and IMF. The author closes with a warning that the Uruguay Round did little to satisfy criticism that the General Agreement on Tariffs and Trade was too legalistic
Characteristics of transparent conductive ITO films
No full text碩士本研究利用共析出法及溶劑熱法成功致被摻雜鈦與鋅離子之氧化銦錫粉末，摻雜濃度分別為4at%、6at%及8at%，並探討摻雜對粉體光學及電學性質影響。由XRD繞射分析知摻雜元素不會改變氧化銦錫晶體結構。經由溶劑熱處理後，粉體氧空缺增加形成淡藍或深藍色。由全光譜儀分析知，摻雜鈦及鋅離子會增加其能隙，呈現出藍移的趨勢。由霍爾電壓分析知，載子濃度隨摻雜量提升而上升，遷移率則是相反；摻雜鈦及鋅離子對導電率沒有明顯影響。The present study has been successful prepared the Ti and Zn -doped ITO powders by the methods of co-precipitation and solvothermal, and the doping concentration are 4at%, 6at%, and 8at%. The effects of doped-elements and content on the optical and electricity properties of ITO powders were investigated. By XRD diffraction analysis, we know that the doped-elements would not change the crystal structure of indium tin oxide. The band-gap energy of Ti and Zn -doped ITO powders tended to increase and then the spectrums appeared the trends of blue-shifted by UV-Visible-NIR spectrophotometer. With the increment of the doping concentration, the carrier concentration increased and the mobility decreased. The Ti and Zn –doped ITO powders have no significant effect on the conductivity.目錄
壹、 導論 1
1.1前言 1
1.2文獻回顧 2
1.2.1氧化銦錫(ITO)介紹 2
1.2.1.1 ITO晶體結構 2
1.2.1.2 ITO導電性質 3
1.2.1.3 ITO光學性質 5
1.2.2 ITO粉末製備 7
1.2.2.1共析出法(co-precipitation) 7
1.2.2.2固相反應法(solid state reaction) 7
1.2.2.3溶膠凝膠法(sol–gel method) 9
1.2.2.4水熱法hydrothermal mrthod(溶劑熱法 solvothermal method) 10
1.2.3 ITO成膜方式 11
1.2.3.1浸泡式塗佈(Dip Coating) 11
1.2.3.2旋轉塗佈(Spin Coating) 11
1.2.3.3 RF磁控濺鍍(sputting) 12
1.2.4 ITO粉體分散 13
1.2.4.1粉體分散原理 13
1.2.4.2分散方法 14
1.2.5 ITO粉末燒結 16
1.3 研究目的及動機 16
貳、 實驗設計 18
2.1 實驗材料與設備 18
2.1.1實驗材料 18
2.1.2儀器設備 19
2.2實驗步驟 20
2.2.1 ITO粉體製作 20
2.2.2 溶劑熱法處理 20
2.2.3 ITO漿料製備 21
2.2.4 漿料成膜 21
2.2.5 ITO薄錠製作 21
2.3 儀器分析與原理 22
2.3.1 X光繞射分析 22
2.3.2霍爾電壓量測原理 23
2.3.3 粒徑分析儀 24
參、 結果與討論 25
3.1 ITO摻雜 25
3.2共析出合成 26
3.3ITO粉體煆燒 27
3.3.1 顏色變化 27
3.3.2 EDS分析 28
3.4溶劑熱法處理 29
3.4.1顏色轉變 29
3.4.2 X光繞射分析 30
3.5漿料性質 32
3.5.1漿料顏色與分散性 32
3.5.2粒徑分佈 34
3.6光學性質分析 37
3.6.1互補色效應 37
3.6.2紅移與藍移 38
3.6.3阻斷效應(Cut-off Effect) 44
3.7電學性質分析 45
3.7.1摻雜電學分析 45
肆、 結論 47
伍、 參考文獻 49
圖表目錄
圖 1.1：ITO晶格示意圖 3
圖 1.2：典型ITO 薄膜穿透率、反射率以及吸收率的光譜圖。 5
圖 1.3：固相反應法製備粉體流程圖…………………………………..8
圖 3.1：共析出合成示意圖；a.ph=1時溶液；b.ph=3時溶液；c.ph=7時溶液 26
圖 3.3：ITO摻雜(a)4at%(灰藍);(b)6at%(淡藍);(c)8at%(黃)Zn之顏色 28
圖 3.4：ITO摻雜Ti之EDS圖譜 28
圖 3.5：ITO摻雜Zn之EDS圖譜 29
圖 3.6：摻雜(a)4at%;(b)6at%;(c) 8at%; Ti 及摻雜(d)4at%;(e)6at%;(f) 8at% Zn之ITO顏色 29
圖 3.7：ITO摻雜4at%Ti與Zn之XRD圖譜 30
圖 3.8：ITO摻雜6at%Ti與Zn之XRD圖譜 31
圖 3.9：ITO摻雜8at%Ti與Zn之XRD圖譜 31
圖 3.10：ITO摻雜0at%Ti與Zn之XRD圖譜 32
圖 3.11：球磨前粉體於溶劑之沉降狀態 33
圖 3.12：摻雜(a)4at%;(b)6at%;(c)8at%;Ti 之ITO漿料呈現穩定懸浮狀態 33
圖 3.13：摻雜(a)4at%;(b)6at%;(c)8at%;Zn 之ITO漿料呈現穩定懸浮狀態 34
圖 3.14：ITO摻雜(a)4at%;(b)6at%;(c)8at% Ti之粒徑分佈 35
表 3.1：ITO摻雜(a)4at%;(b)6at%;(c)8at%;Ti之d10%,d50%,d90%粒徑大小 35
圖 3.15：ITO摻雜(a)4at%;(b)6at%;(c)8at% Zn之粒徑分佈 36
表 3.2：ITO摻雜(a)4at%;(b)6at%;(c)8at%;Ti之d10%,d50%,d90%粒徑大小 36
圖 3.16：互補色色環 37
圖 3.17：ITO摻雜Ti薄膜透光情形 38
圖 3.18：ITO摻雜Zn薄膜透光情形 38
圖 3.19：20wt%摻雜Ti之ITO薄膜之UV-vis光譜圖 40
圖 3.20：40wt%摻雜Ti之ITO薄膜之UV-vis光譜圖 41
圖 3.21：60wt%摻雜Ti之ITO薄膜之UV-vis光譜圖 41
圖 3.22：20wt%摻雜Zn之ITO薄膜之UV-vis光譜圖 42
圖 3.23：40wt%摻雜Zn之ITO薄膜之UV-vis光譜圖 42
圖 3.24：60wt%摻雜Zn之ITO薄膜之UV-vis光譜圖 43
表 3.3：ITO摻雜Ti元素比較表 43
表 3.4：ITO摻雜Zn元素比較表 44
表 3.5：ITO摻雜Ti紅外線阻斷波長 45
表 3.6：ITO摻雜Zn紅外線阻斷波長 45
表 3.7：ITO摻雜Ti載子濃度、載子遷移率及導電率 46
表 3.8：ITO摻雜Zn載子濃度、載子遷移率及導電率 46學號: 601370348, 學年度: 10
Silicon electro-optic modulator
No full textElectronic redacted version excludes material for which permission has not been granted by the rights holderIn recent years, as on-chip data transmission has increased dramatically, much time and effort has been devoted to the development of compact electro-optic modulators with large bandwidth and low power consumption, which is the key component for on-chip data links. Silicon which has been widely used in electronic industry has been considered as a promising material for electro-optic modulators, due to its mature manufacturing technology and low cost.
In this work, a silicon electro-optic modulator based on a new type of phase shifter is proposed. The phase shifter is in one arm of an asymmetric Mach-Zehnder interferometer (MZI) structure and operates very similar to a MOS capacitor. Indium tin oxide (ITO) is used as an electrode and flowable oxide (FOx, spin-on-glass) is used as a gate oxide. ITO is being widely used in many electro-optic applications as a transparent conductor, as it offers both electrical conductivity and optical transparency, although it has seen less use in optical waveguide devices.
Electrical simulations have been completed in order to study the electrical performance of the phase shifter and also to improve the design. SiO₂ has been used as a gate oxide in the simulation. The depletion region width and capacitance-voltage (C-V) characterization have been modelled. Based on the theoretical analysis and simulation results, n-type silicon with the doping concentration of 1×10¹⁷ cm⁻³ has been chosen as the active material.
ITO fabrication and its electrical and optical properties have been studied. The effect of ITO annealing on sheet resistance and transmittance has been investigated. ITO (140 nm thick) annealed at 400˚C for 30 minutes in air shows the best result. The sheet resistance is around 750 Ω/□ and the optical transmittance is about 87%.
Aluminium (Al) electrical contacts to silicon have been fabricated and tested. The HF cleaning and post thermal annealing effect on the contact resistance has been investigated. The transmission line method (TLM) has been used to determine the contact resistance. The Al contact resistance is about 335 Ω on n-type silicon substrate with a doping concentration of 1×10¹⁷ cm⁻³.
ITO-FOx phase shifters and modulators have been fabricated and tested. The MZI structure of the modulator shows the typical interference pattern. This is important for realising phase-intensity modulation. Al-FOx phase shifters have also been fabricated and tested. The transmission depends on the Voltage, both in terms of phase and the optical loss, clearly indicating a change in carrier density. Although ITO-FOx phase shifters and modulators did not work successfully due to high optical losses caused by waveguides sidewall roughness and fabrication process, ITO showed promise to use in electro-optic modulators as a transparent conducting layer. The ITO layer separates silicon waveguides from Al contacts and lowers optical losses due to metal absorption.
Overall, successful operation of a MOS-capacitor type optical phase shifter has been achieved, but the modulation efficiency is low (1 dB at 50 V) and the insertion loss is high (over 10 dB)
Martingales on manifolds and geometric Ito calculus
No full textThis work studies properties of stochastic processes taking
values in a differential manifold M with a linear connection Γ, or
in a Riemannian manifold with a metric connection.
Part A develops aspects of Ito calculus for semimartingales
on M, using stochastic moving frames instead of local co-ordinates.
New results include:
-a formula for the Ito integral of a differential form along a
semimartingale, in terms of stochastic moving frames and the
stochastic development (with many useful corollaries);
- an expression for such an integral as the limit in probability
and in L2 of Riemann sums, constructed using the exponential map;
- an intrinsic stochastic integral expression for the 'geodesic
deviation', which measures the difference between the stochastic
development and the inverse of the exponential map;
-a new formulation of 'mean forward derivative' for a wide class
of processes on M.
Part A also includes an exposition of the construction of non-degenerate
diffusions on manifolds from the viewpoint of geometric Ito
calculus, and of a Girsanov-type theorem due to Elworthy.
Part B applies the methods of Part A to the study of 'Γ-martingales'
on M. It begins with six characterizations of Γ-martingales,
of which three are new; the simplest is: a process whose image under
every local Γ-convex function is (in a certain sense) a submartingale,
However to obtain the other characterizations from this one requires
a difficult proof. The behaviour of Γ-martingales under harmonic
maps, harmonic morphisms and affine maps is also studied.
On a Riemannian manifold with a metric connection Γ, a Γ-martingale
is said to be L2 if its stochastic development is an L2
Γ-martingale. We prove that if M is complete, then every such process
has an almost sure limit, taking values in the one-point compactification
of M. No curvature conditions are required. (After this
result was announced, a simpler proof was obtained by P. A. Meyer,
and a partial converse by Zheng Wei-an.)
The final chapter consists of a collection of examples of
Γ-martingales, e.g. on parallelizable manifolds such as Lie groups,
and on surfaces embedded in R3. The final example is of a Γ-martingale
on the torus T (Γ is the Levi-Civita connection for the
embedded metric) which is also a martingale in R3
Optical properties of ITO/TiO 2 single and double layer thin films deposited by RPLAD
No full textIndium tin oxide (ITO) and titanium dioxide (TiO2) single layer and double layer ITO/TiO2 films were
prepared using reactive pulsed laser ablation deposition (RPLAD) with an ArF excimer laser for
applications in dye-sensitized solar cells (DSSCs). The films were deposited on SiO2 substrates either at
room temperatures (RT) or heated to 200–400 8C. Under optimized conditions, transmission of ITO films
in the visible (vis) rangewas above 89% for films produced at RT and 93% for the ones deposited at higher
temperatures. Increasing the substrate temperature from RT to 400 8C enhances the transmission of TiO2
films in the vis-NIR from about 70% to 92%. High transmission (90%) was observed for the double layer
ITO/TiO2 with a transmission cut-off above 900 nm. From the transmission data, the energies gaps (Eg), as
well as the refractive indexes (n) for the films were estimated. n 2.03 and 2.04, respectively for ITO
films and TiO2 film deposited at 400 8C in the visible region. Post-annealing of the TiO2 films for 3 h at 300
and 500 8C was performed to enhance n. The refractive index of the TiO2 films increases with the postannealing
temperature. The direct band gap is 3.6, 3.74 and 3.82 eV for ITO films deposited at RT, 200,
and 400 8C, respectively. The TiO2 films present a direct band gap of 3.51 and 3.37 eV for as deposited
TiO2 films and when annealed at 400 8C, respectively. There is a shift of about 0.1 eV between ITO and
ITO/TiO2 films deposited at 200 8C. The shift decreases by half when the TiO2 film was deposited at
400 8C. Post-annealing was also performed on double layer ITO/TiO2
Inducing Ito,f and phase 1 repolarization of the cardiac action potential with a Kv4.3/KChIP2.1 bicistronic transgene
No full textThe fast transient outward potassium current (Ito,f) plays a key role in phase 1 repolarization of the human cardiac action potential (AP) and its reduction in heart failure (HF) contributes to the loss of contractility. Therefore, restoring Ito,f might be beneficial for treating HF. The coding sequence of a P2A peptide was cloned, in frame, between Kv4.3 and KChIP2.1 genes and ribosomal skipping was confirmed by Western blotting. Typical Ito,f properties with slowed inactivation and accelerated recovery from inactivation due to the association of KChIP2.1 with Kv4.3 was seen in transfected HEK293 cells. Both bicistronic components trafficked to the plasmamembrane and in adenovirus transduced rabbit cardiomyocytes both t-tubular and sarcolemmal construct labelling appeared. The resulting current was similar to Ito,f seen in human ventricular cardiomyocytes and was 50% blocked at ~0.8 mmol/l 4-aminopyridine and increased ~30% by 5 μmol/l NS5806 (an Ito,f agonist). Variation in the density of the expressed Ito,f, in rabbit cardiomyocytes recapitulated typical species-dependent variations in AP morphology. Simultaneous voltage recording and intracellular Ca2+ imaging showed that modification of phase 1 to a non-failing human phenotype improved the rate of rise and magnitude of the Ca2+ transient. Ito,f expression also reduced AP triangulation but did not affect ICa,L and INa magnitudes. This raises the possibility for a new gene-based therapeutic approach to HF based on selective phase 1 modification
F (V) versus applied voltage of the Au/DNA/ITO device Schottky diode.
No full text<p>F (V) versus applied voltage of the Au/DNA/ITO device Schottky diode.</p
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