119 research outputs found
Arene-ruthenium(II) complexes with tetracyclic oxime derivatives: synthesis, structure and antiproliferative activity against human breast cancer cells
No full textSix new arene-ruthenium(II) complexes containing two different η6-arene ligands – benzene and hexame- thylbenzene, with indenoquinoxalinone oxime analogues (11H-indeno[1,2-b]quinoxalin-11-one oxime, 6H- indeno[1,2-b]pyrido[3,2-e]pyrazin-6-one oxime and 6–(hydroxyimino)indolo[2,1-b]quinazolin-12(6H)-one oxime (tryptanthrin-6-oxime)) as N,N’- chelating ligands are reported. The complexes were characterized by elemental analysis, IR, UV–VIS, 1H and 13C NMR spectroscopy and by single-crystal X-ray structure analysis. Complexes adopt a half-sandwich «piano-stool» geometry with oxime ligands in anionic form, the ruthenium(II) center coordinates one arene, one N,N-bidentate oximate and one chloride ligand. The computational analysis of non-covalent intermolecular interactions revealed weak attraction between the oxime oxygen atoms and the nearest hydrogen atoms of the oxime and the arene ligands. The cytotoxic activity of the complexes was eval- uated against human breast cancer cell line MCF-7 and cisplatin-resistant human breast cancer cell line MCF-7CR as well as non-cancerous human breast epithelial cell line MCF10A. The cytotoxicity tests show micromolar IC50 values and tryptanthrin-6-oxime hexamethylbenzene-ruthenium(II) complex was found to exhibit the best antiproliferative activity among the studied compounds against the MCF-7 and MCF-7CR cell lines (IC50 9.0 ± 4.4 and 8.9 ± 1.5 μM, respectively)
Determination of the deformation parameters of the steel reinforcing phase inside the aluminum matrix during hot rolling
No full textM. Nosko: ORCID 0000-0002-8792-4016; D. Konovodov: ORCID 0000-0001-8282-4991; A. Samsonenko: ORCID 0000-0001-6992-2327; O. Bobukh: ORCID 0000-0001-7254-3854ENG: Purpose. Comparison of deformation parameters during rolling of reinforced composites based on aluminum alloy using braided and expanded steel meshes as a reinforcing phase. Methodology. An experimental study on the effect of pressure on the deformation of the reinforcing phase during rolling of aluminum composites is carried out. A wire mesh and expanded mesh made of stainless steel was used as a reinforcing phase. The effect of deformation on the change in the lattice angle of the reinforcing phase is investigated. Findings. In this work, experimental data on the parameters of deformation of the wire mesh and expanded mesh are obtained. A comparison is made of the shape change in such grids under hot rolling conditions between two aluminum plates, which play the role of a matrix. It is found that the elongation coefficients of the lattice for the experiment with a wire mesh μc is equal to 1.68–2.3, which is greater than the coefficient of elongation of the lattice in the expanded mesh of 1.55–2.2. Therefore, expanded sheets make the best reinforcing layer for aluminumbased composites produced by the rollbonding process. Expanded mesh also reduces the risk of rupture at the intersection of wires. Originality. In the work, for the first time, a comparison of the deformation parameters during roll bonding of composites based on an aluminum alloy, reinforced with a braided and expanded steel mesh, has been given. Obtaining composite materials by means of hot roll bonding requires an understanding of the flow of composite components during deformation and their influence on each other. These peculiarities have not been studied sufficiently. Currently, there is no reliable method for predicting the behavior of the material of a solid reinforcing phase of various shapes inside a composite. Practical value. Advantages of using an expanded steel mesh for reinforcing aluminumbased composites have been confirmed. Scientific results can be used to refine calculating methods for metal flow at high hydrostatic pressure with variable components of the stress tensor and the major stresses.UKR: Мета. Порівняння параметрів деформації при прокатці армованих композитів на основі алюмінієвого сплаву з використанням в якості армуючої фази плетеної та просічновитяжної сталевої сітки. Методика. Виконано експериментальне дослідження впливу обтиснення на деформацію армуючої фази при прокатці алюмінієвих композитів. В якості армуючої фази використана плетена та просічновитяжна сітка з нержавіючої сталі. Досліджено вплив деформації на зміну кута гратки армуючої фази. Результати. У роботі отримані експериментальні дані стосовно параметрів деформації плетеної та просічновитяжної сітки. Проведене порівняння формозміни та ких сіток в умовах гарячої прокатки між двох алюмінієвих пластин, що відіграють роль матриці. Встановлено, що коефіцієнти видовження ґратки для експерименту із плетеною сіткою μc дорівнював 1,68–2,3 що більше, ніж коефіцієнт видовження ґратки із просічновитяжної сітки – 1,55–2,20. Тому, просічновитяжна сітка є кращою в якості армуючого шару для композитів на основі алюмінію, отриманих процесом прокатки–з’єднання. Також просічновитяжна сітка дозволяє зменшити ризик розриву в місцях перехрещення дротів. Наукова новизна. У роботі вперше наведене порівняння параметрів деформації під час прокатки–з’єднання композитів на основі алюмінієвого сплаву, армованих плетеною та просічновитяжною сіткою. Технологія виготовлення композиційних матеріалів із різними видами армуючого елемента за допомогою гарячого з›єднання прокаткою вимагає розуміння властивостей кожного елементу композиту в зоні деформації та їх впливу один на одного. Такі особливості ще не були достатньо досліджені. Тому, наразі, не існує надійного методу прогнозу вання поведінки жорсткої армуючої фази всередині м’якої алюмінієвої матриці. Практична значимість. Підтверджені переваги використання просічновитяжної сітки для армування композитів на основі алюмінію. Результати роботи можуть бути використані для уточнення методів розрахунку течії металу в умовах високого гідростатичного тиску зі змінними компонентами тензора напружень і головними напруженнями
Semiconductors V. 39, I. 01
No full textSemiconductors -- January 2005
Volume 39, Issue 1, pp. 1-159
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Effect of the Parameters of Sapphire Substrates on the Crystalline Quality of GaN Layers
Yu. N. Drozdov, N. V. Vostokov, D. M. Gaponova, V. M. Danil'tsev, M. N. Drozdov, O. I. Khrykin, A. S. Filimonov, and V. I. Shashkin
pp. 1-3 Full Text: PDF (108 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Properties of the GaSb:Mn Layers Deposited from Laser Plasma
Yu. A. Danilov, E. S. Demidov, Yu. N. Drozdov, V. P. Lesnikov, and V. V. Podol'skii
pp. 4-7 Full Text: PDF (59 kB)
Effect of the Conditions of Metal–Organic Chemical-Vapor Epitaxy on the Properties of GaInAsN Epitaxial Films
V. M. Danil'tsev, D. M. Gaponova, M. N. Drozdov, Yu. N. Drozdov, A. V. Murel', D. A. Pryakhin, O. I. Khrykin, and V. I. Shashkin
pp. 8-10 Full Text: PDF (50 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Growth of BGaAs Layers on GaAs Substrates by Metal–Organic Vapor-Phase Epitaxy
D. A. Pryakhin, V. M. Danil'tsev, Yu. N. Drozdov, M. N. Drozdov, D. M. Gaponova, A. V. Murel', V. I. Shashkin, and S. Rushworth
pp. 11-13 Full Text: PDF (53 kB)
Features of GaN Growth Attained by Metal–Organic Vapor-Phase Epitaxy in a Low-Pressure Reactor
O. I. Khrykin, A. V. Butin, D. M. Gaponova, V. M. Danil'tsev, M. N. Drozdov, Yu. N. Drozdov, A. V. Murel, and V. I. Shashkin
pp. 14-16 Full Text: PDF (53 kB)
LOW-DIMENSIONAL SYSTEMS
Effect of an Interfacial Oxide Layer on the Electroluminescence Efficiency of Metal–Quantum-Confined Semiconductor Heterostructures
N. V. Baidus', P. B. Demina, M. V. Dorokhin, B. N. Zvonkov, E. I. Malysheva, and E. A. Uskova
pp. 17-21 Full Text: PDF (125 kB)
Spectra of Persistent Photoconductivity in InAs/AlSb Quantum-Well Heterostructures
V. Ya. Aleshkin, V. I. Gavrilenko, D. M. Gaponova, A. V. Ikonnikov, K. V. Marem'yanin, S. V. Morozov, Yu. G. Sadofyev, S. R. Johnson, and Y.-H. Zhang
pp. 22-26 Full Text: PDF (76 kB)
Long-Time Photoluminescence Kinetics of InAs/AlAs Quantum Dots in a Magnetic Field
T. S. Shamirzaev, A. M. Gilinskii, A. K. Bakarov, A. I. Toropov, S. A. Figurenko, and K. S. Zhuravlev
pp. 27-29 Full Text: PDF (44 kB)
Electroluminescent Properties of Heterostructures with GaInNAs Quantum Wells
A. V. Murel', V. M. Danil'tsev, Yu. N. Drozdov, D. M. Gaponova, V. I. Shashkin, V. B. Shmagin, and O. I. Khrykin
pp. 30-32 Full Text: PDF (49 kB)
A Study of Recombination Centers Related to As–Sb Nanoclusters in Low-Temperature Grown Gallium Arsenide
P. N. Brunkov, A. A. Gutkin, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
pp. 33-36 Full Text: PDF (71 kB)
Effect of the Electrochemical Modification of a Thin Ga(In)As Cap Layer on the Energy Spectrum of InAs/GaAs Quantum Dots
I. A. Karpovich, A. V. Zdoroveishchev, S. V. Tikhov, P. B. Demina, and O. E. Khapugin
pp. 37-40 Full Text: PDF (57 kB)
Intersubband Absorption of Light in Heterostructures with Double Tunnel-Coupled GaAs/AlGaAs Quantum Wells
L. E. Vorob'ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov, V. A. Shalygin, V. V. Kapaev, S. Hanna, S. Schmidt, E. A. Zibik, and A. Seilmeier
pp. 41-43 Full Text: PDF (52 kB)
Current Oscillations under Lateral Transport in GaAs/InGaAs Quantum Well Heterostructures
A. V. Antonov, V. I. Gavrilenko, E. V. Demidov, B. N. Zvonkov, and E. A. Uskova
pp. 44-49 Full Text: PDF (90 kB)
Optical Phenomena in InAs/GaAs Heterostructures with Doped Quantum Dots and Artificial Molecules
L. E. Vorob'ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov, V. A. Shalygin, A. A. Andreev, Yu. B. Samsonenko, A. A. Tonkikh, G. E. Cirlin, N. V. Kryzhanovskaya, V. M. Ustinov, S. Hanna, A. Seilmeier, N. D. Zakharov, and P. Werner
pp. 50-53 Full Text: PDF (76 kB)
Calculation of the States of Shallow Donors in Quantum Wells in a Magnetic Field Using Plane Wave Expansion
V. Ya. Aleshkin and L. V. Gavrilenko
pp. 54-57 Full Text: PDF (49 kB)
The Effect of the Localization in a Quantum Well on the Lifetime of the States of Shallow Impurity Centers
E. E. Orlova, P. Harrison, W.-M. Zhang, and M. P. Halsall
pp. 58-61 Full Text: PDF (65 kB)
Cyclotron Resonance in Doped and Undoped InAs/AlSb Heterostructures with Quantum Wells
V. Ya. Aleshkin, V. I. Gavrilenko, A. V. Ikonnikov, Yu. G. Sadofyev, J. P. Bird, S. R. Johnson, and Y.-H. Zhang
pp. 62-66 Full Text: PDF (65 kB)
Terahertz Luminescence of GaAs-Based Heterostructures with Quantum Wells under the Optical Excitation of Donors
N. A. Bekin, R. Kh. Zhukavin, K. A. Kovalevskii, S. G. Pavlov, B. N. Zvonkov, E. A. Uskova, and V. N. Shastin
pp. 67-72 Full Text: PDF (77 kB)
Efficient Near IR Photoluminescence from Gallium Nitride Layers Doped with Arsenic
A. V. Andrianov, S. V. Novikov, I. S. Zhuravlev, T. Li, R. Xia, S. Bull, I. Harrison, E. C. Larkins, and C. T. Foxon
pp. 73-76 Full Text: PDF (64 kB)
Properties of Structures Based on Laser-Plasma Mn-Doped GaAs and Grown by MOC-Hydride Epitaxy
Yu. V. Vasil'eva, Yu. A. Danilov, Ant. A. Ershov, B. N. Zvonkov, E. A. Uskova, A. B. Davydov, B. A. Aronzon, S. V. Gudenko, V. V. Ryl'kov, A. B. Granovsky, E. A. Gan'shina, N. S. Perov, and A. N. Vinogradov
pp. 77-81 Full Text: PDF (71 kB)
A Study of the Properties of the Structures with Al Nanoclusters Incorporated into the GaAs Matrix
N. V. Vostokov, S. A. Gusev, V. M. Danil'tsev, M. N. Drozdov, Yu. N. Drozdov, A. I. Korytin, A. V. Murel, and V. I. Shashkin
pp. 82-85 Full Text: PDF (161 kB)
InGaAs/GaAs Quantum Dot Heterostructures for 3–5 µm IR Detectors
A. V. Antonov, D. M. Gaponova, V. M. Danil'tsev, M. N. Drozdov, L. D. Moldavskaya, A. V. Murel', V. S. Tulovchikov, and V. I. Shashkin
pp. 86-88 Full Text: PDF (48 kB)
Study of the Photoelectric Properties of Ge Quantum Dots in a ZnSe Matrix on GaAs
I. G. Neizvestny, S. P. Suprun, and V. N. Shumsky
pp. 89-94 Full Text: PDF (80 kB)
Unusual Persistent Photoconductivity in the InAs/AlSb Quantum Well
Yu. G. Sadofyev, A. Ramamoorthy, J. P. Bird, S. R. Johnson, and Y.-H. Zhang
pp. 95-99 Full Text: PDF (66 kB)
Special Features of Structural Interaction in (AlGaIn)N/GaN Heterostructures Used as Dislocation Filters
I. P. Soshnikov, N. N. Ledentsov, A. F. Tsatsul'nikov, A. V. Sakharov, W. V. Lundin, E. A. Zavarin, A. V. Fomin, D. Litvinov, E. Hahn, and D. Gerthsen
pp. 100-102 Full Text: PDF (160 kB)
Lateral Photoconductivity of AlGaAs/InGaAs Structures with Quantum Wells and Self-Organized Quantum Dots Under Interband Illumination
O. A. Shegai, A. K. Bakarov, A. K. Kalagin, and A. I. Toropov
pp. 103-106 Full Text: PDF (56 kB)
Spin Effects in Magnetoresistance Induced in an n-InxGa1 – xAs/GaAs Double Quantum Well by a Parallel Magnetic Field
M. V. Yakunin, G. A. Al'shanskii, Yu. G. Arapov, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, B. N. Zvonkov, E. A. Uskova, A. de Visser, and L. Ponomarenko
pp. 107-112 Full Text: PDF (80 kB)
Terahertz Oscillator Based on Nonlinear Frequency Conversion in a Double Vertical Cavity
Yu. A. Morozov, I. S. Nefedov, V. Ya. Aleshkin, and I. V. Krasnikova
pp. 113-118 Full Text: PDF (83 kB)
Localization of Holes in an InAs/GaAs Quantum-Dot Molecule
M. M. Sobolev, G. E. Cirlin, Yu. B. Samsonenko, N. K. Polyakov, A. A. Tonkikh, and Yu. G. Musikhin
pp. 119-123 Full Text: PDF (89 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
The Engineering and Properties of InAs Quantum Dot Molecules in a GaAs Matrix
Yu. B. Samsonenko, G. E. Cirlin, A. A. Tonkikh, N. K. Polyakov, N. V. Kryzhanovskaya, V. M. Ustinov, L. E. Vorob'ev, D. A. Firsov, V. A. Shalygin, N. D. Zakharov, P. Werner, and A. Andreev
pp. 124-126 Full Text: PDF (108 kB)
Resonant Raman Scattering and Atomic Force Microscopy of InGaAs/GaAs Multilayer Nanostructures with Quantum Dots
M. Ya. Valakh, V. V. Strelchuk, A. F. Kolomys, Yu. I. Mazur, Z. M. Wang, M. Xiao, and G. J. Salamo
pp. 127-131 Full Text: PDF (176 kB)
Photoluminescence and the Raman Scattering in Porous GaSb Produced by Ion Implantation
Yu. A. Danilov, A. A. Biryukov, J. L. Gonçalves, J. W. Swart, F. Iikawa, and O. Teschke
pp. 132-135 Full Text: PDF (109 kB)
Efficiency of Avalanche Light-Emitting Diodes Based on Porous Silicon
S. K. Lazarouk, A. A. Leshok, V. A. Labunov, and V. E. Borisenko
pp. 136-138 Full Text: PDF (52 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Observation of the Middle-Infrared Emission from Semiconductor Lasers Generating Two Frequency Lines in the Near-Infrared Region of the Spectrum
V. Ya. Aleshkin, V. I. Gavrilenko, S. V. Morozov, K. V. Marem'yanin, B. N. Zvonkov, and S. M. Nekorkin
pp. 139-141 Full Text: PDF (53 kB)
The Resonant Terahertz Response of a Slot Diode with a Two-Dimensional Electron Channel
V. V. Popov, G. M. Tsymbalov, M. S. Shur, and W. Knap
pp. 142-146 Full Text: PDF (61 kB)
Bloch Oscillations in Superlattices: The Problem of a Terahertz Oscillator
Yu. A. Romanov and Yu. Yu. Romanova
pp. 147-155 Full Text: PDF (111 kB)
The Mode Competition, Instability, and Second Harmonic Generation in Dual-Frequency InGaAs/GaAs/InGaP Lasers
V. Ya. Aleshkin, B. N. Zvonkov, S. M. Nekorkin, and Vl. V. Kocharovsky
pp. 156-159 Full Text: PDF (59 kB)Archived web conten
Magnetic Phase Transformation in the RE(Mn0.5B0.5)O3 Perovskites (RE is a Rare Earth Ion, B-Ni, Co)
No full textA magnetic study of perovskites RE(Mn1-xBx)O3 (RE=Eu, Gd, Tb, Dy, Y ; B=Ni, Co) is reported. It is found that investigated perovskites are nonhomogenous ferromagnets with relatively high Curie temperatures. The magnetic anisotropy of Ni-containing perovskites is much lower than that of Co-containing ones. It is supposed that domains with different charge state of ions and magnetic structure coexist in a wide range of Co- and Mn- concentrations. The metamagnetic behavior has been observed for RE(Mn0.5Co0.5)O3 perovskites (RE=Gd,Tb,Dy ,Y)
Semiconductors V. 39, I. 07
No full textdc.description[en_US]Semiconductors -- July 2005
Volume 39, Issue 7, pp. 735-860
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Nature of a Temperature Hysteresis of Effective Shear Modulus in Single-Crystal Silicon
A. V. Oleinich-Lysyuk, B. I. Gutsulyak, and I. M. Fodchuk
pp. 735-737 Full Text: PDF (54 kB)
Phonon Scattering, Thermoelectric Power, and Thermal Conductivity Control in a Semiconductor���Metal Eutectic Composition
G. I. Isakov
pp. 738-741 Full Text: PDF (57 kB)
The Influence of Oxygen on the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions
O. V. Aleksandrov, A. O. Zakhar'in, and N. A. Sobolev
pp. 742-747 Full Text: PDF (80 kB)
Stresses in Selectively Oxidized GaAs/(AlGa)xOy Structures
S. A. Blokhin, A. N. Smirnov, A. V. Sakharov, A. G. Gladyshev, N. V. Kryzhanovskaya, N. A. Maleev, A. E. Zhukov, E. S. Semenova, D. A. Bedarev, E. V. Nikitina, M. M. Kulagina, M. V. Maksimov, N. N. Ledentsov, and V. M. Ustinov
pp. 748-753 Full Text: PDF (175 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Low-Temperature Instabilities of the Electrical Properties of Cd0.96Zn0.04Te:Cl Semi-insulating Crystals
A. V. Savitskii, O. A. Parfenyuk, M. I. Ilashchuk, K. S. Ulyanitskii, S. N. Chupyra, and N. D. Vakhnyak
pp. 754-758 Full Text: PDF (79 kB)
Polarized Infrared and Raman Spectroscopy Studies of the Liquid Crystal E7 Alignment in Composites Based on Grooved Silicon
E. V. Astrova, T. S. Perova, S. A. Grudinkin, V. A. Tolmachev, Yu. A. Pilyugina, V. B. Voronkov, and J. K. Vij
pp. 759-767 Full Text: PDF (294 kB)
Hydrogen-Containing Donors in Silicon: Centers with Negative Effective Correlation Energy
Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, and V. G. Tsvyrko
pp. 768-771 Full Text: PDF (59 kB)
Weak Ferromagnetism in InSe:Mn Layered Crystals
V. V. Slyn'ko, A. G. Khandozhko, Z. D. Kovalyuk, A. V. Zaslonkin, V. E. Slyn'ko, M. Arciszewska, and W. D. Dobrowolski
pp. 772-776 Full Text: PDF (71 kB)
Dispersion of the Refractive Index in Tl1 ��� xCuxGaSe2 (0 <= x <= 0.02) and Tl1 ��� xCuxInS2 (0 <= x <= 0.015) Crystals
A. N. Georgobiani, A. Kh. Matiev, and B. M. Khamkhoev
pp. 777-779 Full Text: PDF (42 kB)
The Effect of Neutron Irradiation on the Properties of n-InSb Whisker Microcrystals
I. A. Bolshakova, V. M. Boiko, V. N. Brudnyi, I. V. Kamenskaya, N. G. Kolin, E. Yu. Makido, T. A. Moskovets, and D. I. Merkurisov
pp. 780-785 Full Text: PDF (86 kB)
The Electrooptic Effect and Anisotropy of the Refractive Index in Tl1 ��� xCuxGaSe2 (0 <= x <= 0.02) Crystals
A. N. Georgobiani, A. Kh. Matiev, and B. M. Khamkhoev
pp. 786-788 Full Text: PDF (49 kB)
Stimulation of Negative Magnetoresistance by an Electric Field and Light in Silicon Doped with Boron and Manganese
M. K. Bakhadyrkhanov, O. �. Sattarov, Kh. M. Iliev, K. S. Ayupov, and Tu�rdi Umaier
pp. 789-791 Full Text: PDF (51 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Specific Features of the Physical Properties of a Modified CdTe Surface
V. P. Makhniy
pp. 792-794 Full Text: PDF (100 kB)
The Effects of Interface States on the Capacitance and Electroluminescence Efficiency of InGaN/GaN Light-Emitting Diodes
N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Yu. T. Rebane, R. I. Gorbunov, A. V. Klochkov, D. A. Lavrinovich, and Yu. G. Shreter
pp. 795-799 Full Text: PDF (75 kB)
The Properties of Structures Based on Oxidized Porous Silicon under the Effect of Illumination and a Gas Environment
D. I. Bilenko, O. Ya. Belobrovaya, �. A. Zharkova, D. V. Terin, and E. I. Khasina
pp. 800-804 Full Text: PDF (74 kB)
LOW-DIMENSIONAL SYSTEMS
Optical Transitions in a Quantized Cylindrical Layer in the Presence of a Homogeneous Electric Field
V. A. Arutyunyan, S. L. Arutyunyan, G. O. Demirchyan, and G. Sh. Petrosyan
pp. 805-810 Full Text: PDF (73 kB)
Nonohmic Quasi-2D Hopping Conductance and the Kinetics of Its Relaxation
B. A. Aronzon, D. Yu. Kovalev, and V. V. Ryl'kov
pp. 811-819 Full Text: PDF (130 kB)
The Transition from Thermodynamically to Kinetically Controlled Formation of Quantum Dots in an InAs/GaAs(100) System
Yu. G. Musikhin, G. E. Cirlin, V. G. Dubrovskii, Yu. B. Samsonenko, A. A. Tonkikh, N. A. Bert, and V. M. Ustinov
pp. 820-825 Full Text: PDF (131 kB)
Resonance Modulation of Electron���Electron Relaxation by a Quantizing Magnetic Field
V. I. Kadushkin
pp. 826-829 Full Text: PDF (62 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
A Study of the Local Electronic and Atomic Structure in a-SixC1 ��� x Amorphous Alloys Using Ultrasoft X-ray Emission Spectroscopy
V. A. Terekhov, E. I. Terukov, I. N. Trapeznikova, V. M. Kashkarov, O. V. Kurilo, S. Yu. Turishchev, A. B. Golodenko, and �. P. Domashevskaya
pp. 830-834 Full Text: PDF (79 kB)
Optical and Electrical Properties of Thin Wafers Fabricated from Nanocrystalline Silicon Powder
N. N. Kononov, G. P. Kuz'min, A. N. Orlov, A. A. Surkov, and O. V. Tikhonevich
pp. 835-839 Full Text: PDF (77 kB)
Magnetic Properties of Iron-Modified Amorphous Carbon
S. G. Yastrebov, V. I. Ivanov-Omskii, V. Pop, C. Morosanu, A. Slav, and J. Voiron
pp. 840-844 Full Text: PDF (73 kB)
Photosensitive Properties and a Mechanism for Photogeneration of Charge Carriers in Polymeric Layers Containing Organometallic Complexes
E. L. Aleksandrova, M. Ya. Goikhman, I. V. Podeshvo, and V. V. Kudryavtsev
pp. 845-850 Full Text: PDF (85 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
High-Power Flip���Chip Blue Light-Emitting Diodes Based on AlGaInN
D. A. Zakheim, I. P. Smirnova, I. V. Roznanskii, S. A. Gurevich, M. M. Kulagina, E. M. Arakcheeva, G. A. Onushkin, A. L. Zakheim, E. D. Vasil'eva, and G. V. Itkinson
pp. 851-855 Full Text: PDF (96 kB)
A Ferroelectric Field Effect Transistor Based on a Pb(ZrxTi1 ��� x)O3/SnO2 Heterostructure
I. E. Titkov, I. P. Pronin, D. V. Mashovets, L. A. Delimova, I. A. Liniichuk, and I. V. Grekhov
pp. 856-860 Full Text: PDF (153 kB)dc.description.contributor[en_US]dc.description.contributor[en_US
Semiconductors V. 37, I. 07
No full textSemiconductors -- July 2003
Volume 37, Issue 7, pp. 741-865
CONFERENCE. REVIEW
III International Conference on Amorphous and Microcrystalline Semiconductors (July 2–4, 2002)
E. I. Terukov (the Chairperson of Organizing Committee of the Conference)
pp. 741-743 Full Text: PDF (28 kB)
CONFERENCE. ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electron Diffraction Investigation of Structural Diversity of Amorphous Films of Polymorphic TlInS2
D. I. Ismailov, M. V. Alieva, E. Sh. Alekperov, and F. I. Aliev
pp. 744-747 Full Text: PDF (72 kB)
The Influence of a High and Low Content of Au Impurity on the Photoluminescence of Stoichiometric and Nonstoichiometric Arsenic Sulfide
A. A. Babaev, I. K. Kamilov, Z. V. Vagabova, S. M. Sultanov, A. M. Askhabov, E. I. Terukov, and I. N. Trapeznikova
pp. 748-750 Full Text: PDF (43 kB)
Spectra of Fundamental Optical Functions of BeSe
V. Val. Sobolev and V. V. Sobolev
pp. 751-756 Full Text: PDF (70 kB)
Optical Properties of Imperfect In2Se3
V. Val. Sobolev and V. V. Sobolev
pp. 757-762 Full Text: PDF (71 kB)
CONFERENCE. SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Spectral Photosensitivity of a-SiGe:H/c-Si Heterostructures
A. A. Sherchenkov
pp. 763-765 Full Text: PDF (41 kB)
CONFERENCE. AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Photoinduced Conductivity Change in Erbium-Doped Amorphous Hydrogenated Silicon Films
A. G. Kazanskii, H. Mell, E. I. Terukov, and P. A. Forsh
pp. 766-768 Full Text: PDF (47 kB)
On Studying Nanoporous-Carbon-Based Composites by Small-Angle X-Ray Scattering
É. A. Smorgonskaya
pp. 769-774 Full Text: PDF (99 kB)
Fullerene Single Crystals as Adsorbents of Organic Compounds
V. I. Berezkin, I. V. Viktorovskii, A. Ya. Vul', L. V. Golubev, V. N. Petrova, and L. O. Khoroshko
pp. 775-783 Full Text: PDF (92 kB)
X-Raying Studies of the Nanoporous Carbon Structure Produced from Carbide Materials
R. N. Kyutt, A. M. Danishevskii, É. A. Smorgonskaya, and S. K. Gordeev
pp. 784-788 Full Text: PDF (65 kB)
The Influence of Deposition Conditions and Alloying on the Electronic Properties of Amorphous Selenium
S. O. Kasap, K. V. Koughia, B. Fogal, G. Belev, and R. E. Johanson
pp. 789-794 Full Text: PDF (75 kB)
Synthesis and Physical Properties of Si(Ge)–Se–Te Glasses
L. A. Kulakova, B. T. Melekh, V. I. Bakharev, and V. Kh. Kudoyarova
pp. 795-799 Full Text: PDF (70 kB)
Effect of Rare-Earth Impurities on the Photoluminescence of Ge2S3 Glass
A. A. Babaev, I. K. Kamilov, Z. V. Vagabova, S. M. Sultanov, A. M. Askhabov, E. I. Terukov, and I. N. Trapeznikova
pp. 800-802 Full Text: PDF (50 kB)
Influence of the Order–Disorder Transition in the Crystal Electron Subsystem on the Electron Density at Lattice Sites
N. P. Seregin, T. R. Stepanova, Yu. V. Kozhanova, V. P. Volkov, P. P. Seregin, and N. N. Troitskaya
pp. 803-806 Full Text: PDF (64 kB)
Organic Materials for Photovoltaic and Light-Emitting Devices
T. A. Yourre, L. I. Rudaya, N. V. Klimova, and V. V. Shamanin
pp. 807-815 Full Text: PDF (113 kB)
Optical and Electrical Properties of Polyamide Acid and Metal–Polymer Complex Based on Terbium
É. A. Lebedev, M. Ya. Goikhman, M. E. Kompan, V. Kh. Kudoyarova, I. V. Podeshvo, E. I. Terukov, and V. V. Kudryavtsev
pp. 816-817 Full Text: PDF (38 kB)
Photosensitivity of New Photoconductive Polymers Based on Ruthenium–Biquinolyl Complexes
E. L. Aleksandrova, M. Ya. Goikhman, I. V. Podeshvo, I. V. Gofman, and V. V. Kudryavtsev
pp. 818-820 Full Text: PDF (52 kB)
Optical and Photosensitive Properties of Comb-Shaped Polyamide-Imides
E. L. Aleksandrova, M. Ya. Goikhman, L. I. Subbotina, K. A. Romashkova, I. F. Gofman, V. V. Kudryavtsev, and A. V. Yakimanskii
pp. 821-824 Full Text: PDF (54 kB)
A Study of the Effect of Oxygen on the Intensity of Erbium Photoluminescence in Amorphous SiOx:(H, Er) Films Formed by DC Magnetron Sputtering
Yu. K. Undalov, E. I. Terukov, O. B. Gusev, and V. Kh. Kudoyarova
pp. 825-831 Full Text: PDF (90 kB)
CONFERENCE. PHYSICS OF SEMICONDUCTOR DEVICES
Splitting of Resonant Optical Modes in Fabry–Perot Microcavities
V. G. Golubev, A. A. Dukin, A. V. Medvedev, A. B. Pevtsov, A. V. Sel'kin, and N. A. Feoktistov
pp. 832-837 Full Text: PDF (89 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
The Use of Magnesium to Dope Gallium Nitride Obtained by Molecular-Beam Epitaxy from Activated Nitrogen
A. A. Vorob'ev, V. V. Korablev, and S. Yu. Karpov
pp. 838-842 Full Text: PDF (67 kB)
Simulation of Growth Kinetics of Octahedral and Platelike Oxygen Precipitates in Silicon
V. V. Svetukhin, A. G. Grishin, and O. V. Prikhod'ko
pp. 843-845 Full Text: PDF (41 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Special Features of Electron Spin Resonance in 4H-SiC in the Vicinity of the Insulator–Metal Phase Transition: I. Effects of Spin Interaction
A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, and E. N. Mokhov
pp. 846-854 Full Text: PDF (106 kB)
Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System
V. G. Dubrovskii, V. A. Egorov, G. E. Cirlin, N. K. Polyakov, Yu. B. Samsonenko, N. V. Kryzhanovskaya, A. F. Tsatsul'nikov, and V. M. Ustinov
pp. 855-860 Full Text: PDF (76 kB)
LOW-DIMENSIONAL SYSTEMS
Control over the Parameters of InAs–GaAs Quantum Dot Arrays in the Stranski–Krastanow Growth Mode
N. A. Cherkashin, M. V. Maksimov, A. G. Makarov, V. A. Shchukin, V. M. Ustinov, N. V. Lukovskaya, Yu. G. Musikhin, G. E. Cirlin, N. A. Bert, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg
pp. 861-865 Full Text: PDF (131 kB)Archived web conten
Semiconductors V. 39, I. 07
No full textSemiconductors -- July 2005
Volume 39, Issue 7, pp. 735-860
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Nature of a Temperature Hysteresis of Effective Shear Modulus in Single-Crystal Silicon
A. V. Oleinich-Lysyuk, B. I. Gutsulyak, and I. M. Fodchuk
pp. 735-737 Full Text: PDF (54 kB)
Phonon Scattering, Thermoelectric Power, and Thermal Conductivity Control in a Semiconductor–Metal Eutectic Composition
G. I. Isakov
pp. 738-741 Full Text: PDF (57 kB)
The Influence of Oxygen on the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions
O. V. Aleksandrov, A. O. Zakhar'in, and N. A. Sobolev
pp. 742-747 Full Text: PDF (80 kB)
Stresses in Selectively Oxidized GaAs/(AlGa)xOy Structures
S. A. Blokhin, A. N. Smirnov, A. V. Sakharov, A. G. Gladyshev, N. V. Kryzhanovskaya, N. A. Maleev, A. E. Zhukov, E. S. Semenova, D. A. Bedarev, E. V. Nikitina, M. M. Kulagina, M. V. Maksimov, N. N. Ledentsov, and V. M. Ustinov
pp. 748-753 Full Text: PDF (175 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Low-Temperature Instabilities of the Electrical Properties of Cd0.96Zn0.04Te:Cl Semi-insulating Crystals
A. V. Savitskii, O. A. Parfenyuk, M. I. Ilashchuk, K. S. Ulyanitskii, S. N. Chupyra, and N. D. Vakhnyak
pp. 754-758 Full Text: PDF (79 kB)
Polarized Infrared and Raman Spectroscopy Studies of the Liquid Crystal E7 Alignment in Composites Based on Grooved Silicon
E. V. Astrova, T. S. Perova, S. A. Grudinkin, V. A. Tolmachev, Yu. A. Pilyugina, V. B. Voronkov, and J. K. Vij
pp. 759-767 Full Text: PDF (294 kB)
Hydrogen-Containing Donors in Silicon: Centers with Negative Effective Correlation Energy
Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, and V. G. Tsvyrko
pp. 768-771 Full Text: PDF (59 kB)
Weak Ferromagnetism in InSe:Mn Layered Crystals
V. V. Slyn'ko, A. G. Khandozhko, Z. D. Kovalyuk, A. V. Zaslonkin, V. E. Slyn'ko, M. Arciszewska, and W. D. Dobrowolski
pp. 772-776 Full Text: PDF (71 kB)
Dispersion of the Refractive Index in Tl1 – xCuxGaSe2 (0 <= x <= 0.02) and Tl1 – xCuxInS2 (0 <= x <= 0.015) Crystals
A. N. Georgobiani, A. Kh. Matiev, and B. M. Khamkhoev
pp. 777-779 Full Text: PDF (42 kB)
The Effect of Neutron Irradiation on the Properties of n-InSb Whisker Microcrystals
I. A. Bolshakova, V. M. Boiko, V. N. Brudnyi, I. V. Kamenskaya, N. G. Kolin, E. Yu. Makido, T. A. Moskovets, and D. I. Merkurisov
pp. 780-785 Full Text: PDF (86 kB)
The Electrooptic Effect and Anisotropy of the Refractive Index in Tl1 – xCuxGaSe2 (0 <= x <= 0.02) Crystals
A. N. Georgobiani, A. Kh. Matiev, and B. M. Khamkhoev
pp. 786-788 Full Text: PDF (49 kB)
Stimulation of Negative Magnetoresistance by an Electric Field and Light in Silicon Doped with Boron and Manganese
M. K. Bakhadyrkhanov, O. É. Sattarov, Kh. M. Iliev, K. S. Ayupov, and Tuérdi Umaier
pp. 789-791 Full Text: PDF (51 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Specific Features of the Physical Properties of a Modified CdTe Surface
V. P. Makhniy
pp. 792-794 Full Text: PDF (100 kB)
The Effects of Interface States on the Capacitance and Electroluminescence Efficiency of InGaN/GaN Light-Emitting Diodes
N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Yu. T. Rebane, R. I. Gorbunov, A. V. Klochkov, D. A. Lavrinovich, and Yu. G. Shreter
pp. 795-799 Full Text: PDF (75 kB)
The Properties of Structures Based on Oxidized Porous Silicon under the Effect of Illumination and a Gas Environment
D. I. Bilenko, O. Ya. Belobrovaya, É. A. Zharkova, D. V. Terin, and E. I. Khasina
pp. 800-804 Full Text: PDF (74 kB)
LOW-DIMENSIONAL SYSTEMS
Optical Transitions in a Quantized Cylindrical Layer in the Presence of a Homogeneous Electric Field
V. A. Arutyunyan, S. L. Arutyunyan, G. O. Demirchyan, and G. Sh. Petrosyan
pp. 805-810 Full Text: PDF (73 kB)
Nonohmic Quasi-2D Hopping Conductance and the Kinetics of Its Relaxation
B. A. Aronzon, D. Yu. Kovalev, and V. V. Ryl'kov
pp. 811-819 Full Text: PDF (130 kB)
The Transition from Thermodynamically to Kinetically Controlled Formation of Quantum Dots in an InAs/GaAs(100) System
Yu. G. Musikhin, G. E. Cirlin, V. G. Dubrovskii, Yu. B. Samsonenko, A. A. Tonkikh, N. A. Bert, and V. M. Ustinov
pp. 820-825 Full Text: PDF (131 kB)
Resonance Modulation of Electron–Electron Relaxation by a Quantizing Magnetic Field
V. I. Kadushkin
pp. 826-829 Full Text: PDF (62 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
A Study of the Local Electronic and Atomic Structure in a-SixC1 – x Amorphous Alloys Using Ultrasoft X-ray Emission Spectroscopy
V. A. Terekhov, E. I. Terukov, I. N. Trapeznikova, V. M. Kashkarov, O. V. Kurilo, S. Yu. Turishchev, A. B. Golodenko, and É. P. Domashevskaya
pp. 830-834 Full Text: PDF (79 kB)
Optical and Electrical Properties of Thin Wafers Fabricated from Nanocrystalline Silicon Powder
N. N. Kononov, G. P. Kuz'min, A. N. Orlov, A. A. Surkov, and O. V. Tikhonevich
pp. 835-839 Full Text: PDF (77 kB)
Magnetic Properties of Iron-Modified Amorphous Carbon
S. G. Yastrebov, V. I. Ivanov-Omskii, V. Pop, C. Morosanu, A. Slav, and J. Voiron
pp. 840-844 Full Text: PDF (73 kB)
Photosensitive Properties and a Mechanism for Photogeneration of Charge Carriers in Polymeric Layers Containing Organometallic Complexes
E. L. Aleksandrova, M. Ya. Goikhman, I. V. Podeshvo, and V. V. Kudryavtsev
pp. 845-850 Full Text: PDF (85 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
High-Power Flip–Chip Blue Light-Emitting Diodes Based on AlGaInN
D. A. Zakheim, I. P. Smirnova, I. V. Roznanskii, S. A. Gurevich, M. M. Kulagina, E. M. Arakcheeva, G. A. Onushkin, A. L. Zakheim, E. D. Vasil'eva, and G. V. Itkinson
pp. 851-855 Full Text: PDF (96 kB)
A Ferroelectric Field Effect Transistor Based on a Pb(ZrxTi1 – x)O3/SnO2 Heterostructure
I. E. Titkov, I. P. Pronin, D. V. Mashovets, L. A. Delimova, I. A. Liniichuk, and I. V. Grekhov
pp. 856-860 Full Text: PDF (153 kB)Archived web conten
Semiconductors V. 39, I. 05
No full textSemiconductors -- May 2005
Volume 39, Issue 5, pp. 485-607
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
The Effect of Oxygen on the ZnS Electronic Energy-Band Structure
N. K. Morozova, I. A. Karetnikov, K. V. Golub, N. D. Danilevich, V. M. Lisitsyn, and V. I. Oleshko
pp. 485-492 Full Text: PDF (113 kB)
Magnetic Ordering Effects in Heavily Doped GaAs:Fe Crystals
B. P. Popov, V. K. Sobolevskii, E. G. Apushkinskii, and V. P. Savel'ev
pp. 493-498 Full Text: PDF (91 kB)
The Electrical and Optical Properties of InP Irradiated with High Integrated Fluxes of Neutrons
V. N. Brudnyi, N. G. Kolin, D. I. Merkurisov, and V. A. Novikov
pp. 499-505 Full Text: PDF (100 kB)
The Conductivity and Hall Effect in CdF2:In and CdF2:Y
I. I. Saidashev, E. Yu. Perlin, A. I. Ryskin, and A. S. Shcheulin
pp. 506-513 Full Text: PDF (107 kB)
The Conductivity Tensor and Frequency of Electron Momentum Relaxation in the Case of Scattering by Ionized Impurities in a Magnetic Field: The Density Matrix Method
V. E. Kaminskii
pp. 514-520 Full Text: PDF (85 kB)
The Extrinsic Photoconductivity of Chalcogens in Ge1 – xSix Solid Solutions
N. B. Radchuk and A. Yu. Ushakov
pp. 521-522 Full Text: PDF (29 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Specific Features of Epitaxial-Film Formation on Porous III–V Substrates
A. A. Sitnikova, A. V. Bobyl, S. G. Konnikov, and V. P. Ulin
pp. 523-527 Full Text: PDF (265 kB)
p+-Si–n-CdF2 Heterojunctions
N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, A. I. Ryskin, and A. S. Shcheulin
pp. 528-532 Full Text: PDF (577 kB)
Injection Currents in Narrow-Gap (Pb1 – xSnxTe):In Insulators
A. N. Akimov, V. G. Erkov, A. E. Klimov, E. L. Molodtsova, S. P. Suprun, and V. N. Shumsky
pp. 533-538 Full Text: PDF (83 kB)
The Generation–Recombination Mechanism of Charge Transport in a Thin-Film CdS/CdTe Heterojunction
L. A. Kosyachenko, X. Mathew, V. V. Motushchuk, and V. M. Sclyarchuk
pp. 539-542 Full Text: PDF (63 kB)
LOW-DIMENSIONAL SYSTEMS
The Resonant Tunneling of Holes through Double-Barrier Structures with InAs QDs at the Center of a GaAs Quantum Well
E. N. Morozova, O. N. Makarovskii, V. A. Volkov, Yu. V. Dubrovskii[dagger], L. Turyanska, E. E. Vdovin, A. Patané, L. Eaves, and M. Henini
pp. 543-546 Full Text: PDF (65 kB)
Threshold Behavior of the Formation of Nanometer Islands in a Ge/Si(100) System in the Presence of Sb
G. E. Cirlin, V. G. Dubrovskii, A. A. Tonkikh, N. V. Sibirev, V. M. Ustinov, and P. Werner
pp. 547-551 Full Text: PDF (275 kB)
The Formation of Silicon Nanocrystals in SiO2 Layers by the Implantation of Si Ions with Intermediate Heat Treatments
G. A. Kachurin, V. A. Volodin, D. I. Tetel'baum, D. V. Marin, A. F. Leier, A. K. Gutakovskii, A. G. Cherkov, and A. N. Mikhailov
pp. 552-556 Full Text: PDF (236 kB)
The Diffusion Mechanism in the Formation of GaAs and AlGaAs Nanowhiskers during the Process of Molecular-Beam Epitaxy
G. E. Cirlin, V. G. Dubrovskii, N. V. Sibirev, I. P. Soshnikov, Yu. B. Samsonenko, A. A. Tonkikh, and V. M. Ustinov
pp. 557-564 Full Text: PDF (319 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
The Electronic and Emissive Properties of Au-Doped Porous Silicon
V. E. Primachenko, Ja. F. Kononets, B. M. Bulakh, E. F. Venger, É. B. Kaganovich, I. M. Kizyak, S. I. Kirillova, É. G. Manoilov, and Yu. A. Tsyrkunov
pp. 565-571 Full Text: PDF (90 kB)
The Influence of Vacuum Annealing Temperature on the Fundamental Absorption Edge and Structural Relaxation of a-SiC:H Films
A. V. Vasin, A. V. Rusavsky, V. S. Lysenko, A. N. Nazarov, V. I. Kushnirenko, S. P. Starik, and V. G. Stepanov
pp. 572-576 Full Text: PDF (78 kB)
Simulation of the Electrical Properties of Polycrystalline Ceramic Semiconductors with Submicrometer Grain Sizes
I. V. Rozhanskii and D. A. Zakheim
pp. 577-584 Full Text: PDF (193 kB)
Features of the Vibrational Spectra of Diamond-like and Polymer-like a-C:H Films
E. A. Konshina and A. I. Vangonen
pp. 585-590 Full Text: PDF (73 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Electric Fatigue in MOS Structures due to Lowering of the Potential Barrier during the Field Ionization of Insulator Atoms
I. S. Savinov
pp. 591-593 Full Text: PDF (50 kB)
Tunnel-Recombination Currents and Electroluminescence Efficiency in InGaN/GaN LEDs
N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Yu. T. Rebane, R. I. Gorbunov, and Yu. G. Shreter
pp. 594-599 Full Text: PDF (96 kB)
Effect of Uniaxial Compression on the Photoconversion Parameters in a p-GaSe–n-InSe Optical Contact
S. I. Drapak, M. O. Vorobets, and Z. D. Kovalyuk
pp. 600-602 Full Text: PDF (46 kB)
The Influence of Gain Saturation on the Output Power of Quantum-Well Semiconductor Lasers
G. G. Zegrya and I. Yu. Solov'ev
pp. 603-607 Full Text: PDF (64 kB)Archived web conten
Crystal structure of a supramolecular adduct of tetrachloroferrate(III) with cucurbituryl (H7O3)4[FeCl4]2Cl 2\ub7C36H36N24O 12\ub73H2O
No full textLow Temperature Physics V. 23, I. 10
No full textLow Temperature Physics -- October 1997
Volume 23, Issue 10, pp. 777-861
Effect of hydrostatic pressure on the resistance and critical temperature of YBa2Cu3O7 – delta single crystals
D. D. Balla, A. V. Bondarenko, R. V. Vovk, M. A. Obolenskii, and A. A. Prodan
Full Text: PDF (99 kB)
Nonlinear microwave properties of epitaxial HTS films
G. A. Melkov, V. Yu. Malyshev, and S. K. Korsak
Full Text: PDF (71 kB)
Activation spin waves in the Landau theory of Fermi liquid
A. I. Akhiezer, N. V. Laskin, and S. V. Peletminskii
Full Text: PDF (142 kB)
Electron density of states and spin fluctuations in weak itinerant magnets
A. A. Povzner, A. G. Volkov, and P. V. Bayankin
Full Text: PDF (123 kB)
Hydrodynamic asymptote of Green's functions of a weakly anisotropic multisublattice magnet
A. A. Isayev
Full Text: PDF (168 kB)
Formation of long-range ferrimagnetic order in dilute spinels Li0.5Fe2.5 – xGaxO4 near the multicritical point
N. N. Efimova
Full Text: PDF (118 kB)
Magnetic field induced phase transition in A1 – xCaxMnO3 (A=Nd, Bi, Sm, Eu, Tb)
I. O. Troyanchuk, N. V. Samsonenko, T. K. Solovykh, V. A. Sirenko, H. Szymczak, and A. Nabialek
Full Text: PDF (204 kB)
Relaxation and effects of potential gradient in a Bi point contact
V. V. Andrievskii, Yu. F. Komnik, and S. V. Rozhok
Full Text: PDF (139 kB)
Drag effects between two-dimensional superfluid charged Bose gases separated by a rigid partition
S. I. Shevchenko and S. V. Terent'ev
Full Text: PDF (113 kB)
High-frequency spin susceptibility of a two-dimensional electron gas with electron impurity states
N. V. Gleizer, A. M. Ermolaev, and A. D. Rudnev
Full Text: PDF (102 kB)
Interference phenomena and ballistic transport in a one-dimensional ring
M. V. Moskalets
Full Text: PDF (126 kB)
Energy spectrum of a finite chain of cylindrical potential wells
E. Ya. Glushko
Full Text: PDF (140 kB)
Noncentrality effects of impurity ions in an icosahedral environment
A. B. Roitsin, L. V. Artamonov, and A. A. Klimov
Full Text: PDF (199 kB)
Low-temperature plasticity of Zn-doped beta–Sn crystals
A. N. Diulin, G. I. Kirichenko, V. D. Natsik, and V. P. Soldatov
Full Text: PDF (113 kB)
Influence of cyclic change of normal and superconducting states on the deformation of Pb–In alloys
V. P. Lebedev, V. S. Krylovskii, and V. M. Pinto Simoes
Full Text: PDF (63 kB)
Photon excitation of the third molecular continuum in solid krypton
A. N. Ogurtsov, E. V. Savchenko, J. Becker, M. Runne, and G. Zimmerer
Full Text: PDF (56 kB)
Anisotropic pinning and the mixed-state galvanothermomagnetic properties of superconductors—a phenomenological approach
V. A. Shklovskij
Full Text: PDF (111 kB)
Low-temperature acoustic characteristics of the amorphous alloy Zr41.2Ti13.8Cu12.5Ni10Be22.5
A. L. Gaiduk, E. V. Bezuglyi, V. D. Fil, and W. L. Johnson
Full Text: PDF (95 kB)
Erratum: Peculiarities in the electron properties of delta-layers in epitaxial silicon. III. Electron–phonon relaxation [Low Temp. Physics 23, 303–307 (April 1997)]
V. Yu. Kashirin, Yu. F. Komnik, A. S. Anopchenko, O. A. Mironov, C. J. Emeleus, and T. E. Whall
Full Text: PDF (25 kB)Archived web conten
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