7,157 research outputs found

    Impact of issues on party performance

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    European Parliament (EP) elections are traditionally analysed and interpreted according to the second order model (Reif and Schmitt 1980; van der Eijk and Franklin 1996): EP elections are second order contests characterized by low turnout (Franklin 2001) and driven by domestic factors (de Vreese et al. 2006). Such contexts, furthermore, offer a platform for new parties to emerge, they tend to favour small rather than big parties and, finally, they are likely to result in electoral losses for governing parties. Since the first direct elections to the European Parliament in 1979, the second-order theory has been tested in the aftermath of each single election (van der Eijk, Franklin and Marsh 1996; Marsh 1998; Schmitt 2005; Schmitt and Teperoglou 2015), and has repeatedly confirmed its conceptual and empirical validity. As regards the main characteristics of a second-order election, lower turnout is the one that is most strictly linked to the lower saliency of EP elections. This feature has been explained by relying on a small number of structural factors (Franklin 2001), which are not related to the EU dimension. For instance, scholars have shown that saliency of EP elections depends also on the time of national electoral cycles in which they occur: EP elections are more important when they take place shortly before a national parliamentary election, at which time they gain an importance as 'barometers' of national party standings (van der Eijk and Franklin 1996). Compared to other second-order elections (e.g. local elections), nevertheless, EP elections share with first-order elections an important feature: they are both held at the national level. Party competition at national level has been interpreted by some scholars in terms of issue competition (Carmines and Stimson 1980; Green-Pedersen 2007). According to the second-order perspective, the impact of issues on EP elections should be mostly related to domestic factors (de Vreese et al., 2006). Consequently it has traditionally been maintained that these elections had no European issue content (van der Eijk and Franklin 1996). However, more recently scholars started to question some of the second order features, especially trying to show the increasing importance of supranational elements in EP elections (Bellucci, Garzia and Rubal 2010; Trechsel 2010; Hix and Marsh 2011; Shuck et al. 2011; Hobolt and Spoon 2012). In this contribution, we support the argument of a “growing Europeanness of European elections” (Trechsel, De Sio and Garzia 2017) through empirical analyses which take into account the role played by shared issues among EU member states in explaining party performances. By taking as a reference point the previous parliamentary elections, we first demonstrate the lower relevance and predictive power of the second-order model for analysing party performance when issues are not taken into account; then, we show that party gains and losses – compared to previous national elections – can be significantly explained by party stances on the same issues across the 28 EU countries, showing signs of a perhaps new emergence of a common European debate, structured around a few key issues; nevertheless, relevant differences emerge when the main geographical areas of the EU are taken into account

    Cryogenic etching of SiO x F y and SiO 2 in SF 6 /H 2 plasma

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    International audienceAbstract The etching of the SiO x F y passivation layer during the etch step of the STiGer process was investigated to better understand and optimize the process. First: a 120 nm thick SiO x F y layer is grown on silicon using SiF 4 /O 2 plasma at low substrate temperature (−100 °C). Then, that 120 nm thick SiO x F y layer is etched using an SF 6 plasma without substrate bias and at different temperatures. The SiO x F y etch rate decreases as the substrate temperature is lowered. H 2 addition to the SF 6 plasma is also investigated and causes the opposite effect. We have also investigated SiO 2 etching at low temperatures using SF 6 /H 2 plasma. The formation of HF on a cooled SiO 2 surface combined with high energy ion bombardment can produce an etch rate as high as 1 μm min −1 at −130 °C. The results are in good agreement with recent experiments involving HF/H 2 O plasmas to deep-etch alternately stacked SiO 2 and Si 3 N 4 thin layers for 3D-NAND technology

    Local poly-SiO𝑥 carrier-selective contacts deposited through a hard mask: Simplified fabrication technique for local poly-SiO𝑥 finger formation

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    Passivating contacts in the front-rear contacted c-Si solar cells enhances the device performance by quenching the contact recombination and enabling sufficient carrier transport. Tunneling oxide passi- vating contact (TOPCon) which consists of an interfacial oxide and a poly-SiO𝑥 layer is one of the most promising contact techniques in passivating both surfaces of the silicon wafer. However, the full area poly-SiO𝑥 layer is absorptive when it is applied at the front side which has become an efficiency limiting factor. In this project, an advanced local poly-SiO𝑥 passivating contact architecture is proposed and presented. The local poly-SiO𝑥 passivating contacts, so-called “poly-SiO𝑥 finger”, is deposited through a hard mask at predefined locations which will be only placed underneath the metal contacts. The formation of poly-SiO𝑥 finger and its application in the solar cells are discussed.First, a silicon wafer hard mask is fabricated by a lithography process followed by a KOH wet chemical etch-back process. Specified openings down to 38.7 𝜇m are established which isolate sections of the substrate for the poly-SiO𝑥 finger formation. P+ doped a-SiO𝑥 :H is deposited using PECVD with SiO𝑥 p+ diffused emitter commercial Cz wafers through the hard mask. By investigating the influence of deposition parameters during the PECVD, specifically the power and pressure, decent uniformity of the finger deposition is achieved. An optimized deposition condition of the doped a-SiO𝑥 :H is established for the poly-SiO𝑥 finger formation: an RF power source at 15 Watt, a chamber pressure of 1.5 mbar, and a substrate temperature of 180 °C. A narrow poly-SiO𝑥 finger with a width of 40.0 𝜇m has been demonstrated.Second, the passivation properties of the symmetrical samples are examined by varying the poly-SiO𝑥 and Al2O3 thickness for the hole carrier selective contacts. A full area p+ TOPCon and Al2O3 symmetric samples were coated on the textured diffused p+ surface with an n-type c-Si substrate to investigate the process parameters on the passivation properties. The optimal 𝑖𝑉𝑜𝑐 of p+ TOPCon samples is 662 𝑚𝑉 and a corresponding 𝐽0 of 156 𝑓 𝐴 𝑐𝑚2 which is obtained with a poly-SiO𝑥 thickness of 50 nm when annealed at 850 °C. The optimal thickness for the Al2O3 passivation layer is achieved by depositing a 20 nm thick layer followed by FGA, with an 𝑖𝑉𝑜𝑐 of 692 𝑚𝑉 and a 𝐽0 of 22.4 𝑓 𝐴/𝑐𝑚2.Finally, a process flowchart has been created to fabricate c-Si solar cells with the local p+ TOPCon on the front p+ diffused emitter and a full area n+ TOPCon on the rear side. A localized polished area is made by a poly-etch process for the alignment between the substrate and the pattern in the lithography mask. Using the ascertained parameters during the optimization, NAOS-SiO𝑥 combining with 50 nm-thick doped p+ a-SiO𝑥 :H fingers are applied on the p+ diffused surface and 100 nm-thick n+a-SiO𝑥 :H on the rear side. A annealing step is performed for the crystallization. A 20 nm-thick Al2O3 followed by a 75 nm SiN𝑥 layer are deposited on the front side and 100 nm SiN𝑥 layer is applied on the rear side. Lithography, wet chemical etch-back together with Al/Ag(front/rear) evaporation are utilized for solar cells metallization. The fabricated c-Si solar cells with poly-SiO𝑥 fingers has a champion efficiency with an efficiency of 7.91 %, with a 𝑖𝑉𝑜𝑐 of 562 𝑚𝑉, 𝑖𝑛𝑡 𝐽𝑠𝑐 of 34.7 𝑚𝐴 𝑐𝑚2 and fill factor of 40.5 %. The limited performance originates from the poor passivation in the poly-SiO𝑥 local contact area and severe 𝑖𝑉𝑜𝑐 drop after the metallization process. For further improvement, good performing c-Si solar cells by minimizing the recombination in the poly-SiO𝑥 local fingers contacts area and optimizing metallization steps are expected to be fabricated .Electrical Engineering | Sustainable Energy Technolog

    Селективная спектроскопия примесных ионов Pr³⁺ в кристаллах Y₂SiO₅ , Gd₂SiO₅ , Lu₂SiO₅

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    На основании исследования низкотемпературных оптических спектров ионов активатора Pr³⁺ в кристаллах Y₂ SiO₅, Gd₂ SiO₅, Lu₂ SiO₅ показано, что параметры и характер расщепления кристаллическим полем термов ¹D₂ и ³H₄ примесных ионов существенно различаются в кристаллах, принадлежащих разным кристаллографическим типам. В кристаллах Y₂ SiO₅ и Lu₂ SiO₅ наблюдается эффект псевдосимметрии при расщеплении терма ¹D₂ для ионов, локализованных в неэквивалентных катионных узлах. Ионы активатора неравномерно заселяют неэквивалентные катионные узлы при увеличении их концентрации. При высоких концентрациях ионов активатора (~ 1 ат. %) в оптических спектрах поглощения появляются спектральные линии, принадлежащие их димерам.Based on a study of the low-temperature optical spectra of Pr³⁺ activator ions in Y₂SiO₅, Gd₂SiO₅, and Lu₂SiO₅ crystals, it is shown that the parameters and character of the crystal-field splitting of the ¹D₂ and ³H₄ terms of the impurity ions are substantially different in crystals belonging to different crystallographic types. In Y₂SiO₅ and Lu₂SiO₅ crystals a pseudosymmetry effect is observed in the splitting of the ¹D₂ term for ions localized in inequivalent cation sites. The activator ions nonuniformly occupy the inequivalent cation sites as their concentration is increased. At high concentrations of activator ions (∼1 at. %) the optical absorption spectra exhibit spectral lines belonging to dimers of activator ions

    Inward motions of the compact SiO masers around VX Sagittarii

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    We report Very Long Baseline Array (VLBA) observations of 43 GHz upsilon = 1, J = 1-0 SiO masers in the circumstellar envelope of the M-type semiregular variable star VX Sgr at three epochs during 1999 April-May. These high-resolution VLBA images reveal a persistent ringlike distribution of SiO masers with a projected radius of approximate to 3 stellar radii. The typical angular size of 0.5 mas for individual maser features was estimated from two-point correlation function analysis of maser spots. We found that the apparent size scale of maser features was distinctly smaller than that observed in the previous observations by comparing their fractions of the total power imaged. This change in the size scale of maser emission may be related to stellar activity that caused a large SiO flare during our observations. Our observations confirmed the asymmetric distribution of maser emission, but the overall morphology has changed significantly, with the majority of the masers clustering to the northeast of the star compared to the majority of the masers lying in the southwest in 1992. By identifying 42 matched maser features appearing in all three epochs, we determined the contraction of an SiO maser shell toward VX Sgr at a proper motion of -0.507 +/- 0.069 mas yr(-1), corresponding to a velocity of about 4 km s(-1) at a distance of 1.7 kpc to VX Sgr. Such a velocity is on the order of the sound speed and can be easily explained by the gravitational infall of material from the circumstellar dust shell

    Hydrothermal Synthesis of Braunite in the Systems MnOOH-SiO₂, Mn₃O₄-SiO₂, and MnO₂-SiO₂

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    Braunite (MnMn₆SiO₁₂) was synthesized at low temperatures with pressures from 1 to 2500 bar in the systems manganite (γ-MnOOH)-SiO₂, hausmannite (Mn₃O₄)-SiO₂, and pyrolusite (β-MnO₂)-SiO₂. Braunite-pyrolusite assemblage was produced in the first system and braunite-pyroxmangite (MnSiO₃) assemblage in the second system. In the third system, only braunite was formed as solid phase. These reaction equations are as follows. 8MₙOOH+SiO₂=MnMn₆SiO₁₂+MnO₂+4H₂O 3Mn₃O₄+3SiO₂= MnMn₆SiO₁₂+2MnSiO₃ 7MnO₂+SiO₂= MnMn₆SiO₁₂+2O₂ These reaction temperatures, under 1000 bar H₂O total pressure, are 272℃, 459℃, and 521℃ (Po₂=l bar), respectively. P-T diagrams were constructed to show the stability field of braunite. A good correspondence was found between the braunite assemblage synthesized in our laboratory and those observed in bedded manganese ore deposits

    2014 as the first (truly) European elections?

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    EP elections have so far been consistently characterized as “second-order”. We hypothesize that key processes are emerging which undermine the appropriateness of this model. We argue that, as a consequence of EU policies trying to address the economic and financial crisis, a stronger politicization of Europe has emerged. Accordingly, the national consequences of EU policies have put Europe on the table of national electorates. Together, these processes may lead to an overall increase in saliency of EP elections, so we hypothesize, and to a homogenization of political competition across EU members. We explore this framework in the context of the 2009 and 2014 EP elections. In line with extant applications, we first attempt to assess the core predictions of the second-order model through tests on aggregate electoral results. We then investigate specific explanatory mechanisms for the 2014 EP elections, by relating party performance with party stance on political issues

    Carbon-coated SiO/ZrO2 composites as anode materials for lithium-ion batteries

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    A combination of high-energy ball milling and constant pressure chemical vapor deposition was used to prepare carbon-coated SiO/ZrO2 composites. It was found that the as-prepared composites were composed of amorphous carbon, amorphous SiO, and paracryslalline ZrO2. The electrochemical analysis results revealed excellent electrochemical performances for the composites, including a high initial discharge capacity (1737 mA h g(-1)), a remarkable cyclic stability (reversible capacity of 721 mA h g(-1) at 800 mA g(-1), after 100 cycles), and a good rate capability (870 mA h g(-1) at 800 mA g(-1)). These features demonstrate that these composites are promising alternative candidates for high-efficiency electrode materials of Li-ion batteries

    Stability of phase H in the MgSiO4H2-AlOOH-SiO(2)system

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    The newly described hydrous phase H, MgSiO4H2, is stable to the pressures and temperatures of the Earth's lower mantle, suggesting that the Earth's lower mantle may participate in the cycling of water. We present the results of ab initiocalculations on the stability of this phase within the phase H-delta AlOOH-SiO(2)system between 20 and 60GPa, exploring the wide pressure-and temperature stability field of this mineral. We find that hydrogen in phase H is bonded in a single well at all pressures, and only the pure phase results in pressure-induced symmetrization, while the solid solution maintains asymmetric bonding to high pressure. Substitutions on octahedral sites are locally charge-balanced by H. Furthermore, small amounts of Al + H in SiO(2)stabilize the CaCl2-structure of SiO(2)to pressures as low as 20GPa while phase H and delta AlOOH form an ideal mixture at all pressures considered. The resulting structure is stable relative to the anhydrous assemblage of the Earth's lower mantle by 16-19kJ/mol. In alumina-rich phase H this increases the stability of the mineral by similar to 800K relative to the pure substance, making it potentially stable under lower mantle temperatures along typical geotherms. (C) 2017 Elsevier B. V. All rights reserved
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