666 research outputs found
Interview with Mostafa Moharram
No full textهذه المقابلة مع المؤلف والسيناريست المصري مصطفى محرم. يستعرض كتاباته وأفلامه ، ويؤكد على أهمية السيناريو والكتابات المتخصصة . يشرح دور كاتب السيناريو وهو المسؤول عن خلق عمل فعال وجيد ، وكذلك التعامل بطريقة جيدة مع فريق التمثيل . أجرت المقابلة درية شرف الدينIn this interview, Egyptian author and screenwriter Mostafa Moharram speaks about his movies and the importance of scenarios in creating good work. The interview was conducted by Dorreya Sharaf al-Din
Detection and Analysis of Epilepsy Biomarkers in Electrocorticography
No full textAuthor Mostafa MohammadpourDissertation Johannes Kepler Universität Linz 202
Detection and Analysis of Epilepsy Biomarkers in Electrocorticography
No full textAuthor Mostafa MohammadpourDissertation Johannes Kepler Universität Linz 202
L’année de Bacchus d’El Mostafa Bouignane entre devoir de la mémoire et exaltation de la vie
No full textThis study will discuss the approach to the structure and narrative composition of the novel entitled L\u27année de Bacchus by Mostafa Bouignane, published by Virgule Editions in 2020. This text adds to a series of stories of which Bouignane constructs a narrative universe to reveal the nature of man who, even submissive and reduced, remains capable of regaining his freedom and leading a peaceful life. Thus, our study will propose an analysis of the ideological and historical dimension of this text representative of the literary experience of the author, then at the end the questioning of his human and moral values
Wide band and noise characterization of various MOSFETs for optimized use in RF circuits
No full textWireless, portable, and performance are becoming the keywords for both the consumer electronics and the telecommunication markets. These key requirements are very demanding on the circuit design and on the technology levels. In fact, the circuit design is no more separated from the technology. The passage from micro- to nano-electronics was accompanied by significant revolutionary enhancements and modifications of device modeling. In order to meet the new challenges of advanced applications, it is indispensable for the device model to approach from the device physics, as opposed to the empirical models known earlier. This leads, de facto, to a more complicated device model. As a result, a good circuit designer should coercively comprehend the device physics. A profound research is indeed compulsory in this gray area between the circuit design and the device characterization conventional areas.
In this context, the work of this PhD thesis is devoted to provide the link between the device engineering/characterization domain and the circuit design domain, pronouncedly for RF applications. This is achieved through an elaborated research of already existing transistor structures (floating-body and body-tied) as well as new structures (graded channel). Different technologies such as bulk, partially- and fully-depleted SOI are also considered. Based on a complete flow (design of layout to on-wafer measurements), a detailed comparison of all transistors (in terms of dc, ac, RF, non-linear, RF noise, low voltage low power, and high temperature performances) is presented in order to render the RF circuit designer with adequate information for a successful RF product.Sans fils, portable, et performance sont devenus les mots-clés dans les marchés des électroniques et télécommunications. Ces mots clés sont très exigeants aux niveaux des conceptions de circuits et de la technologie. En effet, la conception de circuit n’est plus loin de la technologie. Le passage de micro- au nano-électronique a été accompagné par des améliorations révolutionnaires dans la modélisation de composant. Afin de répondre aux défis des applications avancées, il est indispensable que le model s’approche de la physique du composant, au contraire du cas précédent où des modèles empiriques étaient utilisés. Le concepteur de circuit est donc obligé de bien comprendre la physique du composant. Une recherche approfondie est fortement demandé dans cette zone peu servie entre la conception de circuit et la caractérisation conventionnelle des composants.
Dans ce contexte, cette thèse est dévoué à établir le lien entre la caractérisation des composants d’un côté et la conception de circuit de l’autre côté, en particulier pour les applications haute fréquence. Cela est atteint en appliquant une recherche élaborée de différentes structures des transistors. Des technologies différentes sont aussi considérées comme les technologies bulk, SOI partiellement- et complètement- déserté. Sur base d’un cycle complet de recherche (en commençant par le layout jusqu’aux mesures sous pointes), une comparaison détaillé des tous les transistors (en terme des performances de dc, ac, RF, non-linaires, bruit RF, faible tension faible puissance et haute température) est présentée afin de fournir le concepteur de circuit RF avec un ensemble d’information suffisant pour une conception réussite.(FSA 3) -- UCL, 201
Caractérisation large bande et en bruit de différents MOSFETs en vue d’une utilisation optimisée dans des circuits RF
No full textSans fils, portable, et performance sont devenus les mots-clés dans les marchés des électroniques et télécommunications. Ces mots clés sont très exigeants aux niveaux des conceptions de circuits et de la technologie. En effet, la conception de circuit n’est plus loin de la technologie. Le passage de micro- au nano-électronique a été accompagné par des améliorations révolutionnaires dans la modélisation de composant. Afin de répondre aux défis des applications avancées, il est indispensable que le model s’approche de la physique du composant, au contraire du cas précédent où des modèles empiriques étaient utilisés. Le concepteur de circuit est donc obligé de bien comprendre la physique du composant. Une recherche approfondie est fortement demandé dans cette zone peu servie entre la conception de circuit et la caractérisation conventionnelle des composants.Dans ce contexte, cette thèse est dévoué à établir le lien entre la caractérisation des composants d’un côté et la conception de circuit de l’autre côté, en particulier pour les applications haute fréquence. Cela est atteint en appliquant une recherche élaborée de différentes structures des transistors. Des technologies différentes sont aussi considérées comme les technologies bulk, SOI partiellement- et complètement- déserté. Sur base d’un cycle complet de recherche (en commençant par le layout jusqu’aux mesures sous pointes), une comparaison détaillé des tous les transistors (en terme des performances de dc, ac, RF, non-linaires, bruit RF, faible tension faible puissance et haute température) est présentée afin de fournir le concepteur de circuit RF avec un ensemble d’information suffisant pour une conception réussite.Wireless, portable, and performance are becoming the keywords for both the consumer electronics and the telecommunication markets. These key requirements are very demanding on the circuit design and on the technology levels. In fact, the circuit design is no more separated from the technology. The passage from micro- to nano-electronics was accompanied by significant revolutionary enhancements and modifications of device modeling. In order to meet the new challenges of advanced applications, it is indispensable for the device model to approach from the device physics, as opposed to the empirical models known earlier. This leads, de facto, to a more complicated device model. As a result, a good circuit designer should coercively comprehend the device physics. A profound research is indeed compulsory in this gray area between the circuit design and the device characterization conventional areas.In this context, the work of this PhD thesis is devoted to provide the link between the device engineering/characterization domain and the circuit design domain, pronouncedly for RF applications. This is achieved through an elaborated research of already existing transistor structures (floating-body and body-tied) as well as new structures (graded channel). Different technologies such as bulk, partially- and fully-depleted SOI are also considered. Based on a complete flow (design of layout to on-wafer measurements), a detailed comparison of all transistors (in terms of dc, ac, RF, non-linear, RF noise, low voltage low power, and high temperature performances) is presented in order to render the RF circuit designer with adequate information for a successful RF product
mxemam/SNCS22_RoutingArchitecture: Release v1.0.0
No full text<p>The release with the code and data files for the SNCS paper.</p>
Cataglyphis laylae Cedric A. Collingwood & Donat Agosti & Mostafa R. Sharaf & Antonius van Harten 2011, nov. spec.
No full textCataglyphis laylae Collingwood nov. spec. Plates 96–103 Cataglyphis desertorum Forel, 1894, teste Collingwood, 1985; unavailable name according to Agosti (1990). Specimens examined: Holotype: 1 ☿, United Arab Emirates, al-Ain [24°13'N 55°46'E], iii.1995, leg. C.A. Collingwood (MHNG). Paratypes: 3 ☿, al-Ain zoo, 13.iii.2005, CAC. 1 ☿, Remah, 9.iii.1995, CCA. 3 ☿, Remah, resthouse, 250 m, irrigated sand dune [24°10'37"N 55°18'6"E], 18.iii.1995, leg. D. Agosti. 6 ☿, Remah, resthouse, 250 m, irrigated sand dune, nest with one entrance, [24°10'37"N, 55°18'6"E], 18.iii.1995, leg. D. Agosti. 1 ☿, Sharjah Desert Park, 5–6.x.2004, AvH; 1 ☿, 3.iii.2005, CAC. 1 ☿, al- Za'aba, 100 m, sandy soil with Rhaisa stricta [23°43'20"N, 55°33'49"E], 22.iii.1995, leg. D. Agosti. Description: A large worker from al-Ain was selected as holotype. The measurements are as follows: total length 8.40; head width 3.60; head length 4.20; scape length 3.84; funicular segment I 0.40; funicular segment II 0.23; petiole length 1.10; petiole width 0.72. Colour dark reddish brown. There are no exterior hairs on the scapes or hind tibia. The gaster, petiole and propodeum have dorsal hairs. Remarks: This species thought to correspond with C. desertorum has to be described as a new species. In fact it is one of the commonest Cataglyphis in southern Arabia. The main distinguishing feature compared with other dark Cataglyphis is the slender petiole, which has the anterior face more sloped than in other similar species such as C. niger (André, 1882) and C. savignyi (Dufour, 1862). Biology: Cataglyphus laylae nov. spec. does not appear to occur in open sandy desert and is most abundant in disturbed habitats such as man-developed plantations and open cultivated fields. Distribution: This species was recorded by Collingwood (1985) as C. desertorum from Saudi Arabia and Oman and as Cataglyphis spec. by Collingwood & Agosti (1996). Etymology: The new species is named after a village settlement called “Layla”, just north of Riyadh (Saudi Arabia) in the area where the author (CAC) first encountered it in numbers in an Acacia plantation.Published as part of Cedric A. Collingwood, Donat Agosti, Mostafa R. Sharaf & Antonius van Harten, 2011, Order Hymenoptera, family Formicidae, pp. 1-70 in Arthropod fauna of the UAE 4 on page 54, DOI: 10.5281/zenodo.116858
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