1,720,978 research outputs found
Going Beyond Counting First Authors in Author Co-citation Analysis
The present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
We provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Dispelling the Myths Behind First-author Citation Counts
We conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
Nanodiamonds: CVD synthesis and color centers incorporation for quantum technologies.
International audienceDiamond, a solid composed of carbon atoms, is an extremely interesting material for its technological and scientific applications such as those in nuclear physics and power electronics. Recent progress achieved in controlling diamond synthesis has made it possible to produce very pure crystals and incorporate and control atomic impurities and carbon vacancies in the crystal lattice. The appropriate impurity-vacancy combinations can give rise to special defects known as color centers, such as the nitrogen-vacancy (NV), which exhibits exceptional quantum properties with optically addressable spins. The use of diamond containing color centers has paved the way for the development of innovative quantum technologies, such as very high-resolution magnetometry, quantum information processing, and extreme-conditions sensing [1-3]. Nevertheless, the development of quantum sensors at the nanometric scale remains one of the most interesting challenges. In this respect, the development of reliable nanoparticle synthesis techniques that allow the desired defects to be incorporated and their quantum optical properties to be modulated is crucial. Two major methods have been used to synthesize nanodiamonds (NDs) at an industrial scale: the detonation and the milling techniques [4]. The first one is a bottom-up method based on the detonation of carbon-containing explosives in a closed chamber. The second one is a top-down technique based on the milling of diamond microcrystals synthesized at high-pressure high-temperature (HPHT). Although these methods have enabled large-scale production, their use for quantum technologies presents some limitations related to the complex post-treatments required to purify the NDs and enhance their optical properties. In the ongoing exploration of the ND synthesis world, recent new results have been achieved with the development of a very promising technique: the plasma-assisted chemical vapor deposition (CVD) [5, 6]. With this technique, it is possible to synthesize high-quality NDs by a simple manufacturing procedure, getting good control of both nanoparticle growth process and color center formation. In this work, the CVD-ND growth process optimization is presented, showing the impact of different plasma parameters and gas phase composition on the nanoparticle crystallinity, size, and shape. Morphological characterizations evidence the production of small (around 100 nm) and well-faceted ND particles. The incorporation of strategic impurities such as nitrogen, silicon and germanium for the production of quantum ND containing NV, SiV and GeV color centers respectively, will be thoroughly explored. The high flexibility of the CVD growth technique will be discussed as the SiV and GeV color center incorporation can be tuned within NDs by varying the gas phase composition despite the impurities originating from a solid wafer. Eventually, the quantum properties of the incorporated color centers have been successfully investigated under extreme pressure conditions (up to ~180 GPa), showing a monotonous blue shift of their optical zero-phonon line. Since their luminescence remains stable, SiV and GeV centers emerge as high-pressure nanosensors for superconductivity experiments [7].References[1] G. Villaret, et al., Applied Physics Letters 122 (19) 2023, p. 194001.[2] A. Hilberer, et al., Physical Review B 107 (22) 2023, p. L220102.[3] M. Pompili, et al., Science 372 (6539) 2021, p. 259.[4] N. Nunn, et al., Curr. Opin. Solid State Mater. Sci. 21 (1) 2017, p. 1.[5] M. De Feudis, et al., Advanced Materials Interfaces 7 (2) 2019, p. 1901408.[6] A. Tallaire, et al., ACS Appl. Nano Mater. 2 (9) 2019, p. 5952.[7] B. Vindolet, et al., Physical Review B 106 (21) 2022, p. 214109
Synthetic Diamond Materials for Emerging Quantum Technologies
International audienceProgress in controlling diamond synthesis has made it possible to produce very pure crystals and to incorporate and control atomic impurities and carbon vacancies in the crystal lattice. The appropriate impurity-vacancy combinations can give rise to special defects known as color centers, such as the nitrogen-vacancy (NV) or the silicon-vacancy (SiV), which exhibit exceptional quantum properties with spins that are optically addressable. The use of diamond containing color centers has paved the way for the development of innovative quantum technologies, such as very high-resolution magnetometry and quantum information processing. Nevertheless, the development of quantum sensors at the nanometric scale remains one of the most interesting challenges. In this context, the development of a reliable nanoparticle synthesis technique that allows the desired defects to be incorporated and their quantum optical properties to be modulated is crucial. In this seminar, an efficient and recent method to produce diamond nanoparticles containing NV, SiV and germanium-vacancy (GeV) centers is proposed through direct plasma assisted chemical vapour deposition (CVD) growth. This technique allows good control of both nanoparticle growth processes and color centers formation. The optimization of the CVD nanodiamond growth process is presented, showing the impact of different plasma parameters and gas phasecomposition on nanoparticle crystallinity, size and shape. Morphological characterizations reveal the production of small (around 100 nm) and well faceted nanodiamond particles. In addition, the SiV and GeV color centers incorporation can be tuned within this material by varying the gas phase composition which emphasizes the high flexibility of the CVD growth technique. Finally, the quantum properties of the incorporated color centers have been successfully investigated under extreme pressure conditions (up to ~ 180 GPa) showing a monotonic blue shift of their optical zero-phonon line. Since their luminescence remains stable, SiV and GeV centers emerge as high-pressure nanosensors
koamabayili/VECTRON-author-checklist: VECTRON author checklist
We have done our best to complete the author checklist relating to the use of animals in the hut study. Note that the objective for the hut study was to evaluate the IRS treatment applications for residual efficacy against Anopheles mosquitoes, including the local An. coluzzii mosquito population. Cows were only used to attract mosquitoes into the huts and no tests were carried out directly on the cows. The author checklist is intended for use with studies where experiments are carried out on animals, which is why we have had such difficulty in completing this for the hut study, as many of the questions do not relate to how the cows were used
Diamanti : sintesi e fabbricazione di contatti per applicazioni di rivelazione
This PhD work has been carried out in international cotutelle agreement between the University of Salento (L3, Italy) and the University of Paris 13 (LSPM, France). The main aim was the manufacturing of ohmic contacts on diamond surface for detector and electronic device applications. The work at L3 was dedicated to the laser-induced diamond graphitization process in order to produce graphitic electrodes on intrinsic diamonds. An experimental set-up dedicated to the laser writing technique on diamond has been developed in both hardware and software aspects and a protocol for the manufacturing of segmented graphitic contacts on diamond surface of large scale (cm²) has been implemented. An extensive characterization work has demonstrated the diamond-graphite phase transition and an ohmic electrical behaviour for the contacts with a resistivity of the order of ≈ 10⁻⁵ Ω.m. Eventually, an all-carbon detector has been developed and tested with 450 MeV electron and positron beams proving to be a good candidate in the role of active target for a new high-energy experiment (PADME) in the framework of the dark matter. The work at LSPM has been dedicated to the development of a protocol allowing reaching ohmic contacts on lightly boron doped diamond with oxygenated surface grown by MPACVD. The fabrication of Ti/Au metallic contact above a mesa structure has relied on a He ion implantation treatment to induce a graphitic layer underneath the diamond surface. The electrical measurements on lightly doped diamonds ([B] = 4 × 10¹⁷ cm⁻³) with metal or graphite / metal contacts have shown that the graphitic layer makes ohmic the contacts leading to a specific contact resistance as low as 3.3 × 10⁻⁴ Ω.cm².Ce travail de doctorat a été réalisé dans le cadre d'un accord de cotutelle international entre l'Université de Salento (L3, Italie) et l'Université de Paris 13 (LSPM, France). L'objectif principal était la fabrication de contacts ohmiques sur des surfaces de diamant pour des applications telles que les détecteurs et les dispositifs de l’électronique. Les travaux au L3 ont été consacrés à l'étude du processus de graphitisation du diamant induit par laser afin de produire des électrodes de graphite sur des diamants intrinsèques. L'étude se concentre en particulier sur le développement d’un appareil expérimental pour l’écriture laser sur diamant tant sur les aspects matériel que logiciel, et un protocole a ainsi été développé pour la fabrication de contacts graphitiques segmentés sur de larges surfaces de diamant (cm²). Des travaux approfondis de caractérisation ont démontré la transition de phase diamant-graphite et le comportement ohmique pour les contacts électriques avec une résistivité de l'ordre de 10⁻⁵ Ω.m. Des détecteurs tout-carbone ont ainsi été développés et testés avec des faisceaux électroniques et positroniques de 450 MeV. Ils permettent d’ouvrir des perspectives en tant que cible active pour de nouvelles expériences de physique des hautes énergies (PADME) dans le cadre de l’étude de la matière noire. Le travail au LSPM a été consacré au développement d'un protocole permettant d'obtenir des contacts ohmiques sur des films diamant faiblement dopé au bore et terminé oxygène, élaborés par MPACVD. Les procédés de fabrication de contacts métalliques Ti/Au sur une structure mesa ainsi que l’implantation par des ions He, ont été développés afin d'induire une couche de graphite juste en dessous de la surface de diamant. Les mesures électriques sur des diamants légèrement dopés ([B] = 4 × 10¹⁷ cm⁻³) avec seulement des contacts métalliques ou graphitiques / métalliques ont montré que la présence de la couche graphitique rend les contacts ohmiques et conduisent à une résistance spécifique de contact égale à 3.3 × 10⁻⁴ Ω.cm².Questo dottorato di ricerca è stato svolto in convenzione di cotutela internazionale tra l’Università del Salento (L3, Italia) e l’Università di Parigi 13 (LSPM, Francia). Il principale obiettivo è stato la fabbricazione di contatti ohmici su superficie di diamante per applicazioni come rivelatori e dispositivi elettronici. Il lavoro a L3 è stato dedicato allo studio del processo di grafitizzazione del diamante indotto da laser al fine di produrre elettrodi grafitici su diamanti intrinseci. In particolare, è stato sviluppato un apparato sperimentale dedicato alla tecnica di scrittura laser su diamante sia nelle componenti hardware che software, ed è stato realizzato un protocollo per la fabbricazione di contatti grafitici segmentati su superfici di diamante di grande scala (cm²). Un ampio lavoro di caratterizzazione ha dimostrato la transizione di fase diamante-grafite e il comportamento ohmico per i contatti elettrici con una resistività dell’ordine di 10⁻⁵ Ω.m. Pertanto, un rivelatore costituito solo di carbonio è stato sviluppato e testato con fasci elettronici e positronici di 450 MeV risultando essere un buon candidato nel ruolo di bersaglio attivo per un nuovo esperimento di fisica delle alte energie (PADME) nel contesto della materia oscura. Il lavoro a LSPM è stato dedicato allo sviluppo di un protocollo che ha consentito di ottenere contatti ohmici su diamanti leggermente drogati con boro e con superficie terminata con ossigeno, cresciuti mediante MPACVD. I processi di fabbricazione di contatti metallici Ti/Au sopra una struttura mesa sono stati sviluppato così come un trattamento di impiantazione a base di ioni di He al fine di indurre uno strato grafitico appena sotto la superficie del diamante. Le misure elettriche su diamanti leggermente drogati ([B] = 4 × 10¹⁷ cm⁻³) con contatti o solo metallici o grafitici / metallici hanno dimostrato che la presenza dello strato grafitico rende i contatti ohmici e comporta una resistenza specifica di contatto pari a 3.3 × 10⁻⁴ Ω.cm²
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