367,440 research outputs found
Nanoimprint lithography for planar chiral photonic meta-materials
No full textRoom temperature nanoimprint lithography has successfully been applied to the fabrication of planar chiral photonic meta-materials. For dielectric chiral structures a single layer of thick HSQ was used while for metallic chiral structures a bi-layer technique using PMMA/hydrogen silsequioxane (HSQ) was applied. The polarization conversion capabilities of planar chiral structures imprinted in dielectric materials have experimentally been observed. This indicates that the developed processes in this work have the prospect of manufacturing planar photonic meta media in high volume at low cost
Diffusive author(s), cohesive author: Analysis of S/N (1994)
No full textThis study indicates the ways in which various aspects of the author(s) are brought forth in Dumb type’s performance art, the S/N production. Previous research has suggested a non-hierarchical organization of Dumb type and the absence of a “privileged author” in Dumb type’s collaborative work, S/N. However, the results that I have investigated from member’s interviews on the creative process of S/N along with my analysis of the recorded images of S/N, indicate a different aspect of the author(s). First, S/N was created through, so to speak, the collective ideas of the members of Dumb type. Further, S/N has at least nine quotations from previous performances, installations, and printed writings, besides the work-in-progress technique. Explicating one of the “author functions” as given by Michel Foucault, each text has plural subjects of the author. However, it has been revealed from members’ interviews that Teiji Furuhashi had a decision-making role in selecting the members’ ideas within the performance. Since then, S/N has had plural subjects of creation; however, Furuhashi is one of the subjects of creation along with the “privileged author.” S/N has plural authors (diffusive authors) yet at the same time, it has a “privileged author,” Teiji Furuhashi (cohesive author)
Going Beyond Counting First Authors in Author Co-citation Analysis
No full textThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Cs-Doped and Cs-S Co-Doped CuI p-Type Transparent Semiconductors with Enhanced Conductivity
No full textOne hindrance in transparent electronics is the lack of high-performance p-type transparent conductors (TCs). The state-of-the-art p-type TC, CuI, has a conductivity two orders of magnitude lower than n-type TCs like ITO. While doping strategies have shown promise in enhancing the hole carrier density in CuI, they often come at the expense of hole mobility. Therefore, understanding how extrinsic dopants affect the mobility of CuI is critical to further improve the performance of CuI-based TCs. Here the structural and electronic properties of Cs-doped CuI are investigated. It is demonstrated that ≈4 at.% Cs doping in CuI increases the carrier density from 2.1 × 1019 to 3.8 × 1020 cm−3 while preserving the film microstructure and local coordination of Cu, as confirmed by HRTEM and XAS analysis. Introducing S as a co-dopant in Cs:CuI boosts the carrier density to 8.2 × 1020 cm−3, reaching a stable conductivity of ≈450 S cm−1. In all cases, the enhanced carrier density negatively affects the hole mobility with ionized impurity scattering and increased Seebeck hole effective mass as mobility limiting mechanisms. Nonetheless, the new Cs, S co-doped CuI exhibits high p-type conductivity, Vis–NIR transparency, and stability, presenting an attractive candidate for future transparent electronic devices.</p
Physicochemical interaction in the quasi-ternary system CuI—Cu₂S—Cu₆PS₅I
No full textМетодами диференційного термічного (ДТА) і рентгенофазового (РФА) аналізів досліджено фазові рівноваги на квазібінарних перерізах CuI—Cu₂S, Cu₂S—Cu₆PS₅I, CuI—Cu₆PS₅I. Встановлено, що системи Cu₂S—Cu₆PS₅I та CuI—Cu₆PS₅I належать до евтектичного типу, а CuI—Cu₂S — до перитектичного. З використанням методів математичного моделювання вивчено фізико-хімічну взаємодію в квазіпотрійній системі CuI—Cu₂S—Cu₆PS₅I, побудовано просторову діаграму. Квазіпотрійна система відноситься до евтектичного типу і характеризується формуванням граничних твердих розчинів на основі вихідних компонентів. Утворення нових складних сполук у квазіпотрійній системі не зафіксовано.Методами дифференциального термического (ДТА) и рентгенофазового (РФА) анализов изучены фазовые равновесия на квазибинарных разрезах CuI—Cu₂S, Cu₂S—Cu₆PS₅I, CuI—Сu₆PS₅I. Установлено, что системы Cu₂S—Cu₆PS₅I и CuI—Cu₆PS₅I относятся к эвтектическому типу, а CuI—Cu₂S — к перитектическому. С использованием методов математического моделирования изучено физико-химическое взаимодействие в квазитройной системе CuI—Cu₂S—Cu₆PS₅I, построена пространственная диаграмма состояния. Квазитройная система относится к эвтектическому типу и характеризуется образованием ограниченных твeрдых растворов на основании исходных компонентов. Образование новых сложных соединений в квазитройной системе не зафиксировано.Phase relations in the systems CuI—Cu₂S, Cu₂S—Cu₆PS₅I, CuI—Cu₆PS₅I were carried out by differentional thermal analysis and X-ray powder diffraction methods. The systems Cu₂S—Cu₆PS₅I and CuI—Cu₆PS₅I belong to eutectic type with phase transitions in solid state, while the system CuI—Cu₂S belongs to peritectic type. By using of simplex lattice design methods physico-chemical interactions in quasyternary system CuI—Cu₂S—Cu₆PS₅I have been investigated, the space diagram has been built. Quasyternary system belongs to eutectic type with limited solid solutions forming on base of primery components. Formation of new compounds in quasyternary system CuI—Cu₂S—Cu₆PS₅I was not fixed
Cs-Doped and Cs-S Co-Doped CuI p-Type Transparent Semiconductors with Enhanced Conductivity
No full textOne hindrance in transparent electronics is the lack of high-performancep-type transparent conductors (TCs). The state-of-the-art p-type TC, CuI, has aconductivity two orders of magnitude lower than n-type TCs like ITO. Whiledoping strategies have shown promise in enhancing the hole carrier densityin CuI, they often come at the expense of hole mobility. Therefore,understanding how extrinsic dopants affect the mobility of CuI is critical tofurther improve the performance of CuI-based TCs. Here the structural andelectronic properties of Cs-doped CuI are investigated. It is demonstrated that≈4 at.% Cs doping in CuI increases the carrier density from 2.1 × 10^19 to3.8 × 10^20 cm−3 while preserving the film microstructure and localcoordination of Cu, as confirmed by HRTEM and XAS analysis. Introducing Sas a co-dopant in Cs:CuI boosts the carrier density to 8.2 × 10^20 cm−3,reaching a stable conductivity of ≈450 S cm−1. In all cases, the enhancedcarrier density negatively affects the hole mobility with ionized impurityscattering and increased Seebeck hole effective mass as mobility limitingmechanisms. Nonetheless, the new Cs, S co-doped CuI exhibits high p-typeconductivity, Vis–NIR transparency, and stability, presenting an attractivecandidate for future transparent electronic devices
Impact damage of composite laminates with high-speed waterjet
No full textRain erosion may cause substantial damage to aircrafts during supersonic flight. Such event is investigated here via high-speed waterjet impact on composite laminates. An experimental setup is developed to produce waterjets with the speed up to 700m/s and a finite element model of the waterjet-composite impact event is established. The consistency of experiment and simulation results validates the adopted numerical methods. The distribution of the water-hammer pressure is non-uniform and the maximum pressure occurs near the contact periphery when the water is about to eject laterally. After a high-speed (300∼560m/s) waterjet impacts a composite laminate, the impacted surface depression is observed, and the typical surface damage presents a central region with no visible surface damage surrounded by a faded “failure ring” with resin removal, matrix cracking and minor fiber fracture. Delamination occurs at the interfaces of adjacent layers with unequal dimensions and longitudinal matrix cracking appears on the back surface. Both the velocity and the diameter of waterjets are crucial factors on CFRP damage extents. Water-hammer pressure, the stagnation pressure and propagation of stress waves are failure mechanisms for most matrix damage in CFRP impacted by waterjets.Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.Structural Integrity & Composite
The Logic of Knowledge-Based Cooperation in the Social Dilemma
No full textComputer Science, Artificial IntelligenceComputer Science, Theory & MethodsCPCI-S(ISTP)
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