1,721,026 research outputs found
Strain Relaxation And Stress-driven Interdiffusion In Inasingaasinp Nanowires
No full textThe authors have investigated strain relaxation in InAsInGaAsInP nanowires (NW's). Transmission electron microscopy images show an additional stress field attributed to compositional modulation in the ternary layer, which disrupts NW formation and drives Ga interdiffusion into InAs, according to grazing incidence x-Ray diffraction under anomalous scattering conditions. The strain profile along the NW, however, is not significantly affected when interdiffusion is considered. Results show that the InAs NW energetic stability is preserved with the introduction of ternary buffer layer in the structure. © 2007 American Institute of Physics.916Yoffe, A.D., (2001) Adv. Phys., 50, p. 1Brault, J., Gendry, M., Grenet, G., Hollinger, G., Dieres, Y., Benyattou, T., (1998) Appl. Phys. Lett., 73, p. 2932Yoon, H., Moon, Y., Lee, T., Yoon, E., Kim, Y., (1999) Appl. Phys. Lett., 74, p. 2029Ustinov, V.M., Weber, E.R., Ruvimov, S., Liliental-Weber, Z., Zhukov, A.E., Yu. Egorov, A., Kovsh, A.R., Kopev, P.S., (1998) Appl. Phys. Lett., 72, p. 362Li, H., Daniels-Race, T., Hasan, M.A., (2002) Appl. Phys. Lett., 80, p. 1367Suárez, F., Fuster, D., González, L., González, Y., García, J.M., Dotor, M.L., (2006) Appl. Phys. Lett., 89, p. 091123García, J.M., González, L., González, M.U., Silveira, J.P., González, Y., Briones, F., (2001) J. Cryst. Growth, 227, p. 975Saint-Girons, G., Michon, A., Sagnes, I., Beaudoin, G., Patriarche, G., (2006) Phys. Rev. B, 74, p. 245305Gutírrez, H.R., Cotta, M.A., Bortoleto, J.R.R., (2002) J. Appl. Phys., 92, p. 7523Kegel, I., Metzger, T.H., Lorke, A., Peisl, J., Stangl, J., Bauer, G., Garcia, J.M., Petroff, P.M., (2000) Phys. Rev. Lett., 85, p. 1694Gutírrez, H.R., Magalhães-Paniago, R., Bortoleto, J.R.R., Cotta, M.A., (2004) Appl. Phys. Lett., 85, p. 3581Sztucki, M., Schülli, T.U., Metzger, T.H., Beham, E., Schuh, D., Chamard, V., (2004) Superlattices Microstruct., 36, p. 11Malachias, A., Magalhães-Paniago, R., Kycia, S., Gahill, D., (2004) J. Appl. Phys., 96, p. 3234Gutírrez, H.R., Cotta, M.A., De Carvalho, M.G., (2001) Appl. Phys. Lett., 79, p. 3854Peiró, F., Ferrer, J.C., Cornet, A., Calamiotou, M., Georgakilas, A., (2003) Phys. Status Solidi A, 195, p. 32Bortoleto, J.R.R., Gutírrez, H.R., Cotta, M.A., Bettini, J., (2007) J. Appl. Phys., 101, p. 064907Bortoleto, J.R.R., Gutírrez, H.R., Cotta, M.A., Bettini, J., (2005) Appl. Phys. Lett., 87, p. 013105Henoc, P., Izrael, A., Quillec, M., Launois, H., (1982) Appl. Phys. Lett., 40, p. 96
Vertical And In-plane Electrical Transport In Inas/inp Semiconductor Nanostructures
No full textVertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been investigated by conductive atomic force microscopy (C-AFM) and electrical measurements in processed devices. Localized I-V spectroscopy and spatially resolved current images (at constant bias), carried out using C-AFM in a controlled atmosphere at room temperature, show different conductances and threshold voltages for current onset on the two types of nanostructures. The processed devices were used in order to access the in-plane conductance of an assembly with a reduced number of nanostructures. On these devices, signature of two-level random telegraph noise (RTN) in the current behavior with time at constant bias is observed. These levels for electrical current can be associated to electrons removed from the wetting layer and trapped in dots and/or wires. A crossover from conduction through the continuum, associated to the wetting layer, to hopping within the nanostructures is observed with increasing temperature. This transport regime transition is confirmed by a "temperature-voltage" phase diagram. © 2005 Materials Research Society.8296974T. M. Buehler, D. J. Reilly, R. P. Starrett, V. C. Chan, A. R. Hamilton, A. S. Dzurak, and R. G. Clark, arXiv:cond-mat/0409568 v1, 22 Sep 2004and references thereinGutiérrez, H.R., Cotta, M.A., Bortoleto, J.R.R., De Carvalho, M.M.G., (2002) J. Appl. Phys., 92, p. 7523Gutiérrez, H.R., Cotta, M.A., De Carvalho, M.M.G., (2001) Appl. Phys. Lett., 79, p. 3854Landau, S.A., Junghans, N., Weiß, P.-A., Kolbesen, B.O., Olbrich, A., Schindler, G., Hartner, W., Mazure, C., (2000) Appl. Surf. Sci., 157, p. 387Vicaro, K.O., Cotta, M.A., Gutiérrez, H.R., Bortoleto, J.R.R., (2003) Nanotechnology, 14, p. 509Gutiérrez, H.R., Nakabayashi, D., Silva, P.C., Bortoleto, J.R.R.B., Rodrigues, V., Clerici, J.H., Cotta, M.A., Ugarte, D., (2004) Phys. Stat. Sol. A, 201 (5), p. 888Weissman, M.B., (1988) Rev. Mod. Phys., 60, p. 537Mott, N.F., (1974) Metal-Insulator Transitions, , London: Taylor & Francis LtdSheng, P., Abeles, B., Arie, Y., (1973) Phys. Rev. Lett., 31 (1), p. 4
Probing Individual Quantum Dots: Noise In Self-assembled Systems
No full textIn this work we explore the noise characteristics in lithographically- defined two terminal devices containing self-assembled InAs/lnP quantum dots. The experimental ensemble of InAs dots show random telegraph noise (RTN) with tuneable relative amplitude-up to 150%-in well defined temperature and source-drain applied voltage ranges. Our numerical simulation indicates that the RTN signature correlates with a very low number of quantum dots acting as effective charge storage centres in the structure for a given applied voltage. The modulation in relative amplitude variation can thus be associated to the altered electrostatic potential profile around such centres and enhanced carrier scattering provided by a charged dot. Copyright © 2009 American Scientific Publishers.91163906395Beenakker, C., Schonenberger, C., (2003) Physics Today, 56, p. 37Li, T., Wang, J., Zhang, Y., (2005) J. Nanosci. Nanotechnol., 5, p. 1435Rails, K.S., Skocpol, W.J., Jackel, L.D., Howard, R.E., Fetter, L.A., Epworth, R.W., Tennant, D.M., (1984) Phys. Rev. Lett., 52, p. 228Fuhrer, M.S., Kim, B.M., Dürkop, T., Brintlinger, T., (2002) Nano Lett., 2, p. 755Heikkila, T.T., Belzig, W., (2005) Nano Lett., 5, p. 2088Liu, F., Bao, M., Kim, H.-J., Wang, K.L., Li, C., Liu, X., Zhou, C., (2005) Appl. Phys. Lett., 86, p. 163102Gustavsson, S., Leturcq, R., Simovic, B., Schleser, R., Ihn, T., Studerus, P., Ensslin, K., Gossard, A.C., (2006) Phys. Rev. Lett., 96, p. 076605Lu, W., Ji, Z., Pfeiffer, L., West, K.W., Rimberg, A.J., (2003) Nature, 423, p. 422Müller, J., Von Molnár, S., Ohno, Y., Ohno, H., (2006) Phys. Rev. Lett., 96, p. 186601Imamura, K., Sugiyara, Y., Nakata, Y., Muto, S., Yokoyama, N., (1995) Jap. J. Appl. Phys., 34, pp. L1445Gelves, G.A., Lin, B., Sundararaj, U., Haber, J.A., (2006) Adv. Funct. Mater., 16, p. 2423Kumara, S., Pimparkar, N., Murthy, J.Y., Alam, M.A., (2006) Appl. Phys. Lett., 88, p. 123505Byon, H.R., Choi, H.C., (2006) J. Am. Chem. Soc., 128, p. 2188Alam, M.A., Pimparkar, N., Kumar, S., Murthy, J., (2006) MRS Bull., 31, p. 456Panev, N., Pistol, M.-E., Zwiller, V., Samuelson, L., Jiang, W., Xu, B., Wang, Z., (2001) Phys. Rev. B, 64, p. 45317Panev, N., Pistol, M.-E., Persson, J., Seifert, W., Samuelson, L., (2004) Phys. Rev. B, 70, p. 73309Nauen, A., Hapke-Wurst, I., Hohls, F., Zeitler, U., Haug, R.J., Pierz, K., (2002) Phys. Rev. B, 66, p. 161303Barthold, P., Hohls, F., Maire, N., Pierz, K., Haug, R.J., (2006) Phys. Rev. Lett., 96, p. 246804Vicaro, K.O., Cotta, M.A., Gutiérrez, H.R., Bortoleto, J.R.R., (2003) Nanotechnology, 14, p. 509Nielsen, T.R., Gartner, P., Jahnke, F., (2004) Phys. Rev. B, 69, p. 235314Vicaro, K.O., Gutiérrez, H.R., Bortoleto, J.R.R., Nieto, L., Von Zuben, A.A.G., Seabra, A.C., Schulz, P.A., Cotta, M.A., (2006) Phys. Stat. Sol. (A), 203, p. 1353Simoen, E., Dierickx, B., Claeys, C.L., Declerck, G.J., (1992) IEEE Trans. Elec. Dev., 39, p. 422Gutiérrez, H.R., Cotta, M.A., De Carvalho, M.M.G., (2001) Appl. Phys. Lett., 79, p. 3854Gutiérrez, H.R., Cotta, M.A., Bortoleto, J.R.R., De Carvalho, M.M.G., (2002) J. Appl. Phys., 92, p. 7523Balloco, C., Song, A.M., Missous, M., (2004) Appl. Phys. Lett., 85, p. 5911Duruöz, C.I., Clarke, R.M., Marcus, C.M., Harris Jr., J.S., (1995) Phys. Rev. Lett., 74, p. 3237Efros, A.L., Shklovskii, B.I., (1975) J. Phys. C: Solid State Phys., 8, pp. L49Dunford, J.L., Suganuma, Y., Dhirani, A.-A., Statt, B., (2005) Phys. Rev. B, 72, p. 075441Kirton, M.J., Uren, M.J., (1989) Adv. Phys., 38, p. 367Uren, M.J., Day, D.J., Kirton, M.J., (1985) Appl. Phys. Lett., 47, p. 1195Pettersson, H., Warburton, R.J., Kotthaus, J.P., Carlsson, N., Seifert, W., Pistol, M.-E., Samuelson, L., (1999) Phys. Rev. B, 60, pp. R11289Alexander, C., Brown, A.R., Watling, J.R., Asenov, A., (2005) Sol. Stat. Elect, 49, p. 733Chandler, R.E., Houtepen, A.J., Nelson, J., Vanmaekelbergh, D., (2007) Phys. Rev. B, 75, p. 08532
Shape Transition In Self-organized Inas/inp Nanostructures
No full textIn this letter we report the transition from self-assembled InAs quantum-wires to quantum-dots grown on (100) InP substrates. This transition is obtained when the wires are annealed at the growth temperature. Our results suggest that the quantum-wires are a metastable shape originated from the anisotropic diffusion over the InP buffer layer during the formation of the first InAs monolayer. The wires evolve to a more stable shape (dot) during the annealing. The driving force for the transition is associated with variations in the elastic energy and hence in the chemical potential produced by height fluctuations along the wire. The regions along the wires with no height variations are more stable allowing the formation of complex, self-assembled nanostructures such as dots interconnected by wires.707167172Mendoņa, C.A.C., Cotta, M.A., Meneses, E.A., Carvalho, M.M.G., (1998) Phys. Rev. B, 57, p. 12501Gonzalez, L., Garcia, J.M., Garcia, R., Briones, F., Martinez-Pastor, J., Ballesteros, C., (2000) Appl. Phys. Lett., 76, p. 1104Walther, C., Hoerstel, W., Niehus, H., Erxmeyer, J., Masselink, W.T., (2000) J. Cryst. Growth, 209, p. 572Wu, J., Zeng, Y.P., Sun, Z.Z., Lin, F., Xu, B., Wang, Z.G., (2000) J. Cryst. Growth, 219, p. 180Brault, J., Gendry, M., Grenet, G., Hollinger, G., (1998) Appl. Phys. Lett., 73, p. 2932Nabetani, Y., Ishikawa, T., Noda, S., Sasaki, A., (1994) J. Appl. Phys., 76, p. 347Pashley, D.W., Neave, J.H., Joyce, B.A., (2001) Surf. Sci., 476, p. 35Barabási, A.L., (1997) Appl. Phys. Lett., 70, p. 2565Cotta, M.A., Hamm, R.A., Staley, T.W., Chu, S.N.G., Harriott, L.R., Panish, M.B., Temkin, H., (1993) Phys. Rev. Lett., 70, p. 4106Pashley, M.D., Haberern, K.W., Gaines, J.M., (1991) J. Vac. Sci. Technol. B, 9, p. 938Shiraishi, K., (1992) Appl. Phys. Lett., 60, p. 1363Guo, Q., Pemble, M.E., Williams, E.M., (1999) Surf. Sci., 433, p. 41
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Afm Studies Of Composite 16-mer Polyaniline Langmuir-biodgett (lb) Films
No full textAtomic force microscopy (AFM) images of composite Langmuir-Blodgett (LB) films containing different weight percentages of cadmium stearate and 16-mer polyaniline are investigated. Upon increasing the amount of 16-mer polyaniline content in the composite, large globular structures with higher average roughness could be seen. © 1999 Elsevier Science S.A. All rights reserved.1011-3830831(1990) Langmuir-Blodgett Films, , G.G. Roberts (Ed.) Plenum Press, New YorkDhanabalan, A., Riul Jr., A., Oliveira Jr., O.N., (1998) Supramolecular Science, 5, p. 75. , and references thereinMacDiarmid, A.G., (1997) Synth. Met., 84, p. 27Dhanabalan, A., Riul Jr., A., Mattoso, L.H.C., Oliveira Jr., O.N., (1997) Langmuir, 13, p. 4882Riul Jr., A., Dhanabalan, A., Mattoso, L.H.C., De Souza, L.M., Ticianelli, E.A., Oliveira Jr., O.N., Thin Solid Films, , in pressSuwa, T., Kakimoto, M., Imai, Y., Araki, I., Iriyama, K., (1994) Mol. Cryst. Liq. Cryst, 225, p. 45Constantino, C.J.L., Dhanabalan, A., Pereira Da Silva, M.A., Cotta, M.A., Oliveira Jr., O.N., submitte
Variations on the Author
Full text link“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Full text linkWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Spontaneous Periodic Diameter Oscillations In Inp Nanowires: The Role Of Interface Instabilities
No full textWe have observed that thin InP nanowires generated by vapor-liquid-solid growth display spontaneous periodic diameter oscillations when large group III supersaturations are used. Diameter variations are associated with a large number of stacking faults and crystallographic phase changes(wurtzite/zinc- blende); also the axial distance between oscillations depends on the indium precursor flow used during the run. We attribute the morphology changes to a substantial deformation of the triple phase line (vapor-liquid-solid) at the catalyst nanoparticle edge originated from multistep nucleation during growth. The deformation alters the mechanical force balance acting on the nanoparticle during growth in such a way that the particle displaces from the nanowire top and wets the nanowire sidewall. Subsequently, as catalytic growth occurs at the sidewall, the associated increase in diameter will eventually push the NP back to its original wire-top position until the onset of a new instability at the triple phase line. © 2012 American Chemical Society.131913Yan, R., Gargas, D., Yang, P., (2009) Nat. Photonics, 3, pp. 569-576Duan, X., Huang, Y., Cui, Y., Wang, J., Lieber, C.M., (2001) Nature, 409, pp. 66-69Moreau, A.L.D., Janissen, R., Santos, C.A., Peroni, L.A., Stach-Machado, D.R., De Souza, A.A., De Souza, A.P., Cotta, M.A., (2012) Biosen. Bioelectron., 36, pp. 62-68Mokkapati, S., Jagadish, C., (2009) Mater. Today, 12, pp. 22-32Chau, R., Doyle, B., Datta, S., Kavalieros, J., Zhang, K., (2007) Nat. Mater., 6, pp. 810-812Wagner, R., Ellis, W., (1964) Appl. Phys. Lett., 4, pp. 89-90Wallentin, J., Ek, M., Wallenberg, L.R., Samuelson, L., Deppert, K., Borgström, M.T., (2010) Nano Lett., pp. 4807-4812Caroff, P., Dick, K., Johansson, J., Messing, M., Deppert, K., Samuelson, L., (2008) Nat. Nanotechnol., 4, pp. 50-55Algra, R.E., Verheijen, M.A., Borgström, M.T., Feiner, L.-F., Immink, G., Van Enckevort, W.J.P., Vlieg, E., Bakkers, E.P.A.M., (2008) Nature, 456, pp. 369-372Wallentin, J., Ek, M., Wallenberg, L.R., Samuelson, L., Borgström, M.T., (2012) Nano Lett., 12, pp. 151-155Thelander, C., Caroff, P., Plissard, S., Dey, A.W., Dick, K.A., (2011) Nano Lett., 11, pp. 2424-2429Chiaramonte, T., Tizei, L.H.G., Ugarte, D., Cotta, M.A., (2011) Nano Lett., 11, pp. 1934-1940Zianni, X., (2010) Appl. Phys. Lett., 97, p. 233106Diedenhofen, S.L., Janssen, O.T.A., Grzela, G., Bakkers, E.P.A.M., Gómez Rivas, J., (2011) ACS Nano, 5, pp. 2316-2323Plissard, S.R., Slapak, D.R., Verheijen, M.A., Hocevar, M., Immink, G.W.G., Weperen, I., Van Nadj-Perge, S., Bakkers, E.P.A.M., (2012) Nano Lett., 12, pp. 1794-1798Ross, F.M., (2010) Rep. Prog. Phys., 73, p. 114501Joyce, H.J., Wong-Leung, J., Gao, Q., Tan, H.H., Jagadish, C., (2010) Nano Lett., 10, pp. 908-915Glas, F., Harmand, J.-C., Patriarche, G., (2007) Phys. Rev. Lett., 99, pp. 3-6Oh, S.H., Chisholm, M.F., Kauffmann, Y., Kaplan, W.D., Luo, W., Rühle, M., Scheu, C., (2010) Science (New York), 330, pp. 489-493Tizei, L.H.G., Craven, A.J., Zagonel, L., Tencé, M., Stéphan, O., Chiaramonte, T., Cotta, M.A., Ugarte, D., (2011) Phys. Rev. Lett., 107, pp. 1-5Dubrovskii, V.G., Cirlin, G.E., Sibirev, N.V., Jabeen, F., Harmand, J.C., Werner, P., (2011) Nano Lett., 11, pp. 1247-1253Dayeh, S.A., Yu, E.T., Wang, D., (2009) Nano Lett., 9, pp. 1967-1972Plante, M.C., Lapierre, R.R., (2009) J. Appl. Phys., 105, p. 114304Mohammad, S.N., (2008) Nano Lett., 8, pp. 1532-1538Kobayashi, Y., Kobayashi, N., (1992) Jpn. J. Appl. Phys., 31, p. 71Kobayashi, N., Benchimol, J.L., Alexandre, F., Gao, Y., (1987) Appl. Phys. Lett., 51, p. 1907Paiman, S., Gao, Q., Tan, H.H., Jagadish, C., Pemasiri, K., Montazeri, M., Jackson, H.E., Zou, J., (2009) Nanotechnology, 20, p. 225606Watanabe, Y., Hibino, H., Bhunia, S., Tateno, K., Sekiguchi, T., (2004) Phys. e, 24, pp. 133-137Tsao, J.Y., (1992) Materials Fundamentals of Molecular Beam Epitaxy, p. 301. , 1 st ed. Academic Press: New YorkNebol'Sin, V., Shchetinin, A., (2003) Inorg. Mater., 39, pp. 899-903Dubrovskii, V.G., (2011) Tech. Phys. Lett., 37, pp. 53-57Rudolph, D., Hertenberger, S., Bolte, S., Paosangthong, W., Spirkoska, D., Döblinger, M., Bichler, M., Koblmüller, G., (2011) Nano Lett., 11, pp. 3848-3854Yu, X., Wang, H., Lu, J., Zhao, J., Misuraca, J., Xiong, P., Von Molnár, S., (2012) Nano Lett., 12, pp. 5436-544
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