323,113 research outputs found
2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 mu m
No full textWe report on a fast polycrystalline germanium-on-silicon heterojunction photodetector for the near-infrared. The device exhibits a pulse response faster than 200 ps, allowing operation at 2.5 Gbit/s as testified by open eye diagrams. This polycrystalline device, with responsivities of 16 and 5 mA/W at 1.3 and 1.55 mum, respectively, and dark currents of 1 mA/cm(2), is entirely integrable on standard silicon electronics and is an appealing low-cost candidate for fiber-to-the-home communication networks. (C) 2003 American Institute of Physics
Si-based near infrared photodetectors operating at 10 Gbit/s
No full textWe report on fast p-i-n near infrared photodetectors in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600 degrees C followed by thermal annealing at 900 degrees C. We also verified that bypassing the thermal treatment did not have significant effects on the resulting crystal quality, allowing to considerably reducing the thermal budget hence simplify the integration with silicon. We demonstrate the operation of photodiodes with responsivities of 0.4 and 0.2A/W at 1.3 and 1.55 mu m, respectively, as well as open-eye diagrams at 10 Gbit/s. (c) 2006 Elsevier B.V. All rights reserved
Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers
No full textWe investigate and characterize p-i-n near-infrared photodiodes fabricated in Ge-on-Si by reduced-pressure chemical vapor deposition, a technology compatible with silicon processing. The detectors exhibit remarkably low dark current densities of 1mA/cm(2) at unity reverse bias and high responsivities of 200 mA/W at 1.55 mu m. We evaluated their small-signal resistance, capacitance, and bandwidth as well as eye-diagrams at 2.5 and 10 Gbit/s
P. Radici Colace, S. M. Medaglia, L. Rossetti, S. Sconocchia (ed.), Il Dizionario delle scienze e delle tecniche di Grecia e Roma, 2 vols., Pisa-Roma, Fabrizio Serra, 2010.
No full textP. Radici Colace, S. M. Medaglia, L. Rossetti, S. Sconocchia (ed.), Il Dizionario delle scienze e delle tecniche di Grecia e Roma, 2 vols., Pisa-Roma, Fabrizio Serra, 201
Ge on Si p-i-n photodiodes operating at 10 Gbit/s
No full textWe report on fast p-i-n photodetectors operating in the near infrared and realized in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600 degrees C without affecting the crystal quality and allowing the integration with standard silicon processes. We demonstrate responsivities of 0.4 and 0.2 A/W at 1.3 and 1.55 mu m, respectively, as well as operation at 10 Gbit/s. (c) 2006 American Institute of Physics
High performance germanium-on-silicon detectors for optical communications
No full textWe demonstrate fast and efficient germanium-on-silicon p-i-n photodetectors for optical communications, with responsivities as high as 0.89 and 0.75 A/W at 1.3 and 1.55 mum, respectively, time response 2.5 Gb/s integrated receivers for the second and third fiber spectral windows. (C) 2002 American Institute of Physics
Investigation of Static and Dynamic Characteristics of Optically Controlled Field Effect Transistors
No full textIn this paper, we report on an optically controlled field effect transistor (OCFET). The device is based on a modified MOSFET geometry with a Germanium layer interposed between the gate oxide and the gate metal contact. The investigation is performed using the technology computer aided design tool. We describe the principle of operation and investigate the static and dynamic properties of the OCFET under near infrared light at 1.55 mu m. Device performance in terms of both ON/OFF current ratio and switching times are studied versus design parameters such as Germanium doping and lifetime as well as gate bias voltage and optical power. Strategies toward best operating conditions and satisfactory tradeoff are investigated and discussed along with future perspective and possible fundamental limitations
Context awareness for e-Tourism: An adaptive mobile application
No full textThe Italian towns have a cultural heritage that often do not succeed in being completely enhanced. The natural, artistic and cultural resources present in the Italian towns, above all the smallest ones, many times remain hidden and are not enjoyed by the tourists. In this paper, it is introduced an Adaptive Context Aware app able to support a tourist inside a town. The system can guide the tourist in the discovery of a town proposing him/her resources and services mainly interesting for the user according to his/her interests and the position where he/she is. The objective is reached through the use of a system of description of the context through a graphical formalism named Context Dimension Tree. The App collects information also from social environments adapting the proposed itinerary taking into account the communities and the interests of the user. The entire approach has been tested inside the town of Salerno with very interesting results
Simulations of Ge based optically controlled field effect transistors
No full textWe report on the simulation of Optically Controlled Field Effect Transistors (OCFET) based on a MOSFET with a Germanium gate. We study the static and dynamic characteristics of the device under near infrared light at 1.55 μm and investigate its operation as a digital inverter
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