1,721,011 research outputs found
Klein tunnelling and electron trapping in nanometre-scale graphene quantum dots
No full textRelativistic fermions that are incident on a high potential barrier can pass through unimpeded, a striking phenomenon termed the 'Klein paradox' in quantum electrodynamics. Electrostatic potential barriers in graphene provide a solid-state analogue to realize this phenomenon. Here, we use scanning tunnelling microscopy to directly probe the transmission of electrons through sharp circular potential wells in graphene created by substrate engineering. We find that electrons in this geometry display quasi-bound states where the electron is trapped for a finite time before escaping via Klein tunnelling. We show that the continuum Dirac equation can be successfully used to model the energies and wavefunctions of these quasi-bound states down to atomic dimensions. We demonstrate that by tuning the geometry of the barrier it is possible to trap particular energies and angular momentum states with increased efficiency, showing that atomic-scale electrostatic potentials can be used to engineer quantum transport through graphene.11Nsciescopu
Stacking angle-tunable Photoluminescence from Interlayer Excitons in Twisted Bilayer Graphene
No full textTwisted bilayer graphene (tBLG) is a metallic material with two degenerate van Hove singularity transitions that can rehybridize to form interlayer exciton states. Here we report photoluminescence (PL) emission from tBLG after resonant 2-photon excitation, which tunes with the interlayer stacking angle, θ. We spatially image individual tBLG domains at room-temperature and show a five-fold resonant PL-enhancement over the background hot-electron emission. Prior theory predicts that interlayer orbitals mix to create 2-photon-accessible strongly-bound (~0.7 eV) exciton and continuum-edge states, which we observe as two spectral peaks in both PL excitation and excited-state absorption spectra. This peak splitting provides independent estimates of the exciton binding energy which scales from 0.5–0.7 eV with θ = 7.5° to 16.5°. A predicted vanishing exciton-continuum coupling strength helps explain both the weak resonant PL and the slower 1 ps−1 exciton relaxation rate observed. This hybrid metal-exciton behavior electron thermalization and PL emission are tunable with stacking angle for potential enhancements in optoelectronic and fast-photosensing graphene-based applications.11Ysciescopu
Engineering Grain Boundaries in Two-Dimensional Electronic Materials
No full textEngineering the boundary structures in 2D materials provides an unprecedented opportunity to program the physical properties of the materials with extensive tunability and realize innovative devices with advanced functionalities. However, structural engineering technology is still in its infancy, and creating artificial boundary structures with high reproducibility remains difficult. In this review, various emergent properties of 2D materials with different grain boundaries, and the current techniques to control the structures, are introduced. The remaining challenges for scalable and reproducible structure control and the outlook on the future directions of the related techniques are also discussed.11Nsciescopu
Chiral atomically thin films
No full textChiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics(1,2), stereochemistry(3,4) and spintronics(5,6). In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films(1,2,7,8), or arrays of fabricated building blocks(9-11), could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (theta) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left-and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg mu m(-1)) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by. and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.11Nsciescopu
Graphene and Boron Nitride Lateral Heterostructures for Atomically Thin Circuitry
No full textPrecise spatial control over the electrical properties of thin films is the key capability enabling the production of modern integrated circuitry. Although recent advances in chemical vapour deposition methods have enabled the large-scale production of both intrinsic and doped graphene(1-6), as well as hexagonal boron nitride (h-BN)(7-10), controlled fabrication of lateral heterostructures in these truly atomically thin systems has not been achieved. Graphene/h-BN interfaces are of particular interest, because it is known that areas of different atomic compositions may coexist within continuous atomically thin films(5,10) and that, with proper control, the bandgap and magnetic properties can be precisely engineered(11-13). However, previously reported approaches for controlling these interfaces have fundamental limitations and cannot be easily integrated with conventional lithography(14-16). Here we report a versatile and scalable process, which we call 'patterned regrowth', that allows for the spatially controlled synthesis of lateral junctions between electrically conductive graphene and insulating h-BN, as well as between intrinsic and substitutionally doped graphene. We demonstrate that the resulting films form mechanically continuous sheets across these heterojunctions. Conductance measurements confirm laterally insulating behaviour for h-BN regions, while the electrical behaviour of both doped and undoped graphene sheets maintain excellent properties, with low sheet resistances and high carrier mobilities. Our results represent an important step towards developing atomically thin integrated circuitry and enable the fabrication of electrically isolated active and passive elements embedded in continuous, one-atom-thick sheets, which could be manipulated and stacked to form complex devices at the ultimate thickness limit.11Nsciescopu
Imaging chiral symmetry breaking from Kekulé bond order in graphene
No full textChirality-or 'handedness'-is a symmetry property crucial to fields as diverse as biology, chemistry and high-energy physics. In graphene, chiral symmetry emerges naturally as a consequence of the carbon honeycomb lattice. This symmetry can be broken by interactions that couple electrons with opposite momenta in graphene. Here we directly visualize the formation of Kekule bond order, one such phase of broken chiral symmetry, in an ultraflat graphene sheet grown epitaxially on a copper substrate. We show that its origin lies in the interactions between individual vacancies in the copper substrate that are mediated electronically by the graphene. We show that this interaction causes the bonds in graphene to distort, creating a phase with broken chiral symmetry. The Kekule ordering is robust at ambient temperature and atmospheric conditions, indicating that intercalated atoms may be harnessed to drive graphene and other two-dimensional materials towards electronically desirable and exotic collective phases.11Nsciescopu
Twisted growth by design
No full textTwisted bilayer graphene is epitaxially grown between two adjacent Cu(111) surfaces, with the twist angle controlled by the rotation of the Cu foils as designed.11Nsciescopu
Thermodynamically Driven Tilt Grain Boundaries of Monolayer Crystals Using Catalytic Liquid Alloys
No full textWe report a method to precisely control the atomic defects at grain boundaries (GBs) of monolayer MoS2 by vapor-liquid-solid (VLS) growth using sodium molybdate liquid alloys, which serve as growth catalysts to guide the formations of the thermodynamically most stable GB structure. The Mo-rich chemical environment of the alloys results in Mo-polar 5|7 defects with a yield exceeding 95%. The photoluminescence (PL) intensity of VLS-grown polycrystalline MoS2 films markedly exceeds that of the films, exhibiting abundant S 5|7 defects, which are kinetically driven by vapor-solid-solid growths. Density functional theory calculations indicate that the enhanced PL intensity is due to the suppression of nonradiative recombination of charged excitons with donor-type defects of adsorbed Na elements on S 5|7 defects. Catalytic liquid alloys can aid in determining a type of atomic defect even in various polycrystalline 2D films, which accordingly provides a technical clue to engineer their properties. © 2023 The Authors. Published by American Chemical Society.11Nsciescopu
Going Beyond Counting First Authors in Author Co-citation Analysis
Get PDFThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
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