29,507 research outputs found
Transient outward K+ current (ITO) reduction prolongs action potentials and promotes afterdepolarisations: a dynamic-clamp study in human and rabbit cardiac atrial myocytes
No full textBackground and aim: Human atrial transient outward K+ current (ITO) is decreased in a variety of cardiac pathologies, but how ITO reduction alters action potentials (AP) and arrhythmia mechanisms is poorly understood, owing to non-selectivity of ITO blockers.<p></p>
Aim: to investigate effects of selective ITO changes on AP shape and duration (APD), and on afterdepolarisations or abnormal automaticity with beta-adrenergic-stimulation, using the dynamic-clamp technique in atrial cells.<p></p>
Methods and Results: Human and rabbit atrial cells were isolated by enzymatic dissociation, and electrical activity recorded by whole-cell-patch clamp (35-37oC). Dynamic-clamp-simulated ITO reduction or block slowed AP phase 1 and elevated the plateau, significantly prolonging APD, in both species. In human atrial cells, ITO block (100% ITO subtraction) increased APD50 by 31%, APD90 by 17%, and APD-61mV (reflecting cellular effective refractory period) by 22% (P<0.05 for each). Interrupting ITO block at various time points during repolarisation revealed that the APD90 increase resulted mainly from plateau-elevation, rather than from phase 1-slowing or any residual ITO. In rabbit atrial cells, partial ITO block (~40% ITO subtraction) reversibly increased the incidence of cellular arrhythmic depolarisations (CADs; afterdepolarisations and/or abnormal automaticity) in the presence of the beta-agonist isoproterenol (0.1 μM; ISO), from 0% to 64% (P<0.05). ISO-induced CADs were significantly suppressed by dynamic-clamp increase in ITO (~40% ITO addition). ISO+ITO decrease-induced CADs were abolished by beta1-antagonism with atenolol at therapeutic concentration (1 μM).<p></p>
Conclusion. Atrial cell action potential changes from selective ITO modulation, shown for the first time using dynamic-clamp, have the potential to influence reentrant and non-reentrant arrhythmia mechanisms, with implications for both the development and treatment of atrial fibrillation
Método potenciodinâmico aplicado ao estudo da difusão iônica limitada por camada porosa em substratos de ITO
No full textDissertação (mestrado) - Universidade Federal de Santa Catarina, Centro de Ciências Físicas e Matemáticas, Programa de Pós-Graduação em Física, Florianópolis, 2013.Esta dissertação tem como objetivo estudar o comportamento do substrato transparente condutor composto por óxido de índio dopado com estanho (ITO) durante tratamento catódico em eletrólitos inertes de NaCl, KCl, KI e AlCl3, em diferentes concentrações possuindo a mesma força iônica e em seu pH natural. Após o tratamento é observada a formação de partículas esféricas metálicas de In-Sn, decorrentes da redução do ITO. A morfologia dos depósitos varia com o eletrólito usado e com a velocidade do processo de redução. Os resultados obtidos através dos estudos potenciodinâmicos dos eletrodos indicam um processo controlado por resistência ôhmica. O comportamento resistivo observado durante a formação da camada porosa metálica sugere a aplicação do modelo de resistência de camada porosa LPRM (do inglês Layer-Pore Resistance Model) para análise do processo. No entanto, o modelo LPRM, na forma como foi originalmente desenvolvido, não descreve bem o processo. Uma modificação ao modelo é proposta, a partir da qual, logra-se obter bons ajustes do modelo às curvas potenciodinâmicas. O conjunto de parâmetros extraído do ajuste de curvas obtidas com diferentes taxas de varredura mostra boa correlação com o crescimento da camada porosa e pode ser interpretado como uma medida do caminho difusivo que os íons do eletrólito necessitam percorrer para atingir a camada de ITO subjacente. A modificação da morfologia do substrato durante o processo de redução catódica foi caracterizada por microscopia eletrônica de varredura (MEV) e microscopia de força atômica (AFM). Da análise da rugosidade superficial, obtida das micrografias de AFM, extraiu-se o comprimento de correlação, que mede a granularidade da camada porosa. Usando conceitos simples de passeio aleatório, foi possível estabelecer uma relação entre o caminho difusivo iônico determinado eletroquimicamente, e a morfologia da camada porosa, para os diferentes eletrólitos utilizados.Abstract : This work investigates the behavior of transparent conducting substrates composed of indium tin oxide (ITO) during cathodic treatment in inert aqueous electrolytes (NaCl, KCl, KI e AlCl3), using different concentrations with same ionic force. The treatment causes the formation of spherical metallic particles of In-Sn, resulting from ITO reduction. It is possible to observe that the morphology of deposits is affected by the electrolyte composition and sweep rate. Potentiodynamic studies indicate a process controlled by Ohmic resistance. The resistive behavior observed during growth of the porous metallic layer suggests the application of the Layer-Pore Resistance Model (LPRM) to analyze the results. However, the LPRM model, in its original form, does not give a good description of the process. A modified version of the LPRM is proposed, which yields very good fits to the potentiodynamic curves. The set of fit parameters extracted from the curves, obtained at different scan rates, shows a good correlation with the growth of the porous layer, and could be interpreted as a measure of diffusion paths that ions must travel to reach the underlying ITO layer. The changes on morphology of the substrates during the cathodic reduction was characterized by scanning electron microscope (SEM) and atomic force microscope (AFM). From the roughness analysis obtained from the AFM micrographs, a correlation length was determined that describes the granularity of the porous layer. Using simple concepts of random walk, it was possible to establish a relationship between the ionic diffusion path determined electrochemically, and the morphology of porous layer, for the different electrolytes used
Bonding InGaAsP/ITO/Si Hybrid Laser With ITO as Cathode and Light-Coupling Material
No full textA 1.5-mu m InGaAsP/ITO/Si hybrid laser with indium tin oxide (ITO) as both a cathode and a light-coupling material is presented. The InGaAsP gain structure with a transparent ITO cathode is flip-chip bonded onto a patterned silicon-on-insulator wafer. The light generated in the InGaAsP multiquantum wells is coupled through the ITO cathode into the Si waveguide to form an InGaAsP/ITO/Si hybrid laser. The threshold current density of this hybrid laser is 20 kA/cm(2) at 210 K. Due to the advantages of post-bonding and simplicity of the fabrication process, such a hybrid laser may be a promising Si light source.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000302534300023&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Engineering, Electrical & ElectronicOpticsPhysics, AppliedSCI(E)EI14ARTICLE8712-7142
Letter from Kazuo Ito to Lea Perry, July 15, 1942
No full textTranscript of a letter from Kazuo Ito to Lea Perry. The original letters are housed with the Sonoma County Japanese American Citizens League (JACL), and were borrowed for digitization courtesy of the JACL, December 2014. Digital reproduction of the original item is found in item: ssu_nbea_0010.The North Bay Ethnic Archive features material related to the forced relocation of northern San Francisco Bay Area residents to the Granada (Amache) incarceration camp, Colorado. It includes correspondence, photographs, and reports. Some of the original items are housed with the Sonoma County Japanese American Citizens League (JACL), and were borrowed for digitization courtesy of the JACL. The remainder are housed in Special Collections
Letter from Kazuo Ito to Lea Perry, August 13 1942
No full textTranscript of a letter from Kazuo Ito to Lea Perry. The original letters are housed with the Sonoma County Japanese American Citizens League (JACL), and were borrowed for digitization courtesy of the JACL, December 2014. Digital reproduction of the original item is found in item: ssu_nbea_0012.The North Bay Ethnic Archive features material related to the forced relocation of northern San Francisco Bay Area residents to the Granada (Amache) incarceration camp, Colorado. It includes correspondence, photographs, and reports. Some of the original items are housed with the Sonoma County Japanese American Citizens League (JACL), and were borrowed for digitization courtesy of the JACL. The remainder are housed in Special Collections
Study of Optical and Electrical Properties of Ag/ITO Multi-layer Transparent Electrodes
No full textThe samples of Ag/ITO multilayer films with different Ag insert layer thickness (0.5, 2, 4 nm) were prepared on sapphire and p-GaN substrates. The effects of the Ag layer thickness, annealing temperature and annealing time on the transmittance, sheet resistance and specific contact resistance of Ag/ITO films were investigated. The experiment results show that the transmittance is obviously affected by Ag insert layer thickness. The Current-voltage (I-V) measurements indicate that the sheet resistance and specific contact resistance of Ag/ITO film on p-GaN are lower than those of single ITO film. The samples with Ag(0.5nm)/ITO film on p-GaN produce the low specific contact resistance of similar to 1.3 86 x 10(-4)Omega.cm(2), low sheet resistance of similar to 11 Omega/sq and high transmittance of similar to 90% at 455nm when the samples are annealed at 600 degrees C for 10 minutes
Magnetoresistance in triphenyl-diamine derivative blue organic light emitting devices
No full textCopyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 103, 043706 (2008) and may be found at
Characteristics of transparent conductive ITO films
No full text碩士本研究利用共析出法及溶劑熱法成功致被摻雜鈦與鋅離子之氧化銦錫粉末，摻雜濃度分別為4at%、6at%及8at%，並探討摻雜對粉體光學及電學性質影響。由XRD繞射分析知摻雜元素不會改變氧化銦錫晶體結構。經由溶劑熱處理後，粉體氧空缺增加形成淡藍或深藍色。由全光譜儀分析知，摻雜鈦及鋅離子會增加其能隙，呈現出藍移的趨勢。由霍爾電壓分析知，載子濃度隨摻雜量提升而上升，遷移率則是相反；摻雜鈦及鋅離子對導電率沒有明顯影響。The present study has been successful prepared the Ti and Zn -doped ITO powders by the methods of co-precipitation and solvothermal, and the doping concentration are 4at%, 6at%, and 8at%. The effects of doped-elements and content on the optical and electricity properties of ITO powders were investigated. By XRD diffraction analysis, we know that the doped-elements would not change the crystal structure of indium tin oxide. The band-gap energy of Ti and Zn -doped ITO powders tended to increase and then the spectrums appeared the trends of blue-shifted by UV-Visible-NIR spectrophotometer. With the increment of the doping concentration, the carrier concentration increased and the mobility decreased. The Ti and Zn –doped ITO powders have no significant effect on the conductivity.目錄
壹、 導論 1
1.1前言 1
1.2文獻回顧 2
1.2.1氧化銦錫(ITO)介紹 2
1.2.1.1 ITO晶體結構 2
1.2.1.2 ITO導電性質 3
1.2.1.3 ITO光學性質 5
1.2.2 ITO粉末製備 7
1.2.2.1共析出法(co-precipitation) 7
1.2.2.2固相反應法(solid state reaction) 7
1.2.2.3溶膠凝膠法(sol–gel method) 9
1.2.2.4水熱法hydrothermal mrthod(溶劑熱法 solvothermal method) 10
1.2.3 ITO成膜方式 11
1.2.3.1浸泡式塗佈(Dip Coating) 11
1.2.3.2旋轉塗佈(Spin Coating) 11
1.2.3.3 RF磁控濺鍍(sputting) 12
1.2.4 ITO粉體分散 13
1.2.4.1粉體分散原理 13
1.2.4.2分散方法 14
1.2.5 ITO粉末燒結 16
1.3 研究目的及動機 16
貳、 實驗設計 18
2.1 實驗材料與設備 18
2.1.1實驗材料 18
2.1.2儀器設備 19
2.2實驗步驟 20
2.2.1 ITO粉體製作 20
2.2.2 溶劑熱法處理 20
2.2.3 ITO漿料製備 21
2.2.4 漿料成膜 21
2.2.5 ITO薄錠製作 21
2.3 儀器分析與原理 22
2.3.1 X光繞射分析 22
2.3.2霍爾電壓量測原理 23
2.3.3 粒徑分析儀 24
參、 結果與討論 25
3.1 ITO摻雜 25
3.2共析出合成 26
3.3ITO粉體煆燒 27
3.3.1 顏色變化 27
3.3.2 EDS分析 28
3.4溶劑熱法處理 29
3.4.1顏色轉變 29
3.4.2 X光繞射分析 30
3.5漿料性質 32
3.5.1漿料顏色與分散性 32
3.5.2粒徑分佈 34
3.6光學性質分析 37
3.6.1互補色效應 37
3.6.2紅移與藍移 38
3.6.3阻斷效應(Cut-off Effect) 44
3.7電學性質分析 45
3.7.1摻雜電學分析 45
肆、 結論 47
伍、 參考文獻 49
圖表目錄
圖 1.1：ITO晶格示意圖 3
圖 1.2：典型ITO 薄膜穿透率、反射率以及吸收率的光譜圖。 5
圖 1.3：固相反應法製備粉體流程圖…………………………………..8
圖 3.1：共析出合成示意圖；a.ph=1時溶液；b.ph=3時溶液；c.ph=7時溶液 26
圖 3.3：ITO摻雜(a)4at%(灰藍);(b)6at%(淡藍);(c)8at%(黃)Zn之顏色 28
圖 3.4：ITO摻雜Ti之EDS圖譜 28
圖 3.5：ITO摻雜Zn之EDS圖譜 29
圖 3.6：摻雜(a)4at%;(b)6at%;(c) 8at%; Ti 及摻雜(d)4at%;(e)6at%;(f) 8at% Zn之ITO顏色 29
圖 3.7：ITO摻雜4at%Ti與Zn之XRD圖譜 30
圖 3.8：ITO摻雜6at%Ti與Zn之XRD圖譜 31
圖 3.9：ITO摻雜8at%Ti與Zn之XRD圖譜 31
圖 3.10：ITO摻雜0at%Ti與Zn之XRD圖譜 32
圖 3.11：球磨前粉體於溶劑之沉降狀態 33
圖 3.12：摻雜(a)4at%;(b)6at%;(c)8at%;Ti 之ITO漿料呈現穩定懸浮狀態 33
圖 3.13：摻雜(a)4at%;(b)6at%;(c)8at%;Zn 之ITO漿料呈現穩定懸浮狀態 34
圖 3.14：ITO摻雜(a)4at%;(b)6at%;(c)8at% Ti之粒徑分佈 35
表 3.1：ITO摻雜(a)4at%;(b)6at%;(c)8at%;Ti之d10%,d50%,d90%粒徑大小 35
圖 3.15：ITO摻雜(a)4at%;(b)6at%;(c)8at% Zn之粒徑分佈 36
表 3.2：ITO摻雜(a)4at%;(b)6at%;(c)8at%;Ti之d10%,d50%,d90%粒徑大小 36
圖 3.16：互補色色環 37
圖 3.17：ITO摻雜Ti薄膜透光情形 38
圖 3.18：ITO摻雜Zn薄膜透光情形 38
圖 3.19：20wt%摻雜Ti之ITO薄膜之UV-vis光譜圖 40
圖 3.20：40wt%摻雜Ti之ITO薄膜之UV-vis光譜圖 41
圖 3.21：60wt%摻雜Ti之ITO薄膜之UV-vis光譜圖 41
圖 3.22：20wt%摻雜Zn之ITO薄膜之UV-vis光譜圖 42
圖 3.23：40wt%摻雜Zn之ITO薄膜之UV-vis光譜圖 42
圖 3.24：60wt%摻雜Zn之ITO薄膜之UV-vis光譜圖 43
表 3.3：ITO摻雜Ti元素比較表 43
表 3.4：ITO摻雜Zn元素比較表 44
表 3.5：ITO摻雜Ti紅外線阻斷波長 45
表 3.6：ITO摻雜Zn紅外線阻斷波長 45
表 3.7：ITO摻雜Ti載子濃度、載子遷移率及導電率 46
表 3.8：ITO摻雜Zn載子濃度、載子遷移率及導電率 46學號: 601370348, 學年度: 10
Microptila orienthula Kjaerandsen and Ito
No full text<i>Microptila orienthula</i> Kjaerandsen and Ito <p>(Figs 1, 4 A, 5)</p> <p> <i>Microptila orienthula</i> Kjaerandsen and Ito 2009, 177–180, male, female, Japan (Hokkaido, Honshu); Nishimoto and Nishimoto 2014, 63, Japan (Honshu).</p> <p> <b>Male</b>. Length of each forewing and hind wing 1.6–2.2 mm and 1.4–1.8 mm, respectively (n = 4). Antennae each 19-segmented and 0.6–0.9 mm long (n = 4).</p> <p>Genitalia (Figs. 1 B–1G). Segment IX (IX) annular, dorsally with deep and wide triangular excision at anterior margin, posterior margin with shallow and wide concavity, transverse tergal bridge very narrow, dorsal midline about 1/10 as long as segment IX in dorsal view (Fig. 1 C); in ventral view (Fig. 1 D) anteroventral margin with shallow triangular concavity, posteroventral margin with deep wide concavity. Tergite X (t X) quadrate with large median triangular concavity caudally in dorsal view (Fig. 1 C), semimembranous and transparent, lateral margins lightly sclerotized. Subgenital plate (sg plate) semimembranous with slightly sclerotized lateral margins, twice as long as tergite X (Figs. 1 B, 1C), long ovate with tiny U- or V-shaped excavation caudally in dorsal view (Fig. 1 E). Inferior appendages (inf app) well developed, setose, without any branches, each with basal 2/3 stout, tapered in distal 1/3 (Figs. 1 B, 1D), apex in ventral view incurved and acute (Fig. 1 D), in ventromesal view (Fig. 1 F) basal 2/ 3 with longitudinal setose ridge mesally and apical 1/3 triangular with strongly sclerotized dorsomesal edge. Phallus elongate, with slender titillator (ti) arising near apical 1/3, wrapped around phallus 1.5 times (Fig. 1 G).</p> <p> <b>Female</b>. Length of each forewing and hind wing 1.3–1.8 mm and 1.3–1.6 mm, respectively (n = 4). Antennae each 18-segmented and 0.4–0.6 mm long (n = 4).</p> <p>Abdominal segments I–VII densely covered with long thick setae. Segment VII (VII) tergite and sternite fused laterally, conical in ventral view (Fig. 1 H). Segment VIII (VIII) almost as long as segment VII, often withdrawn into segment VII, ventroposterior margin slightly protruded in some specimens (Figs. 1 H–1J).</p> <p> <b>Specimens examined</b>. <b>Type specimens</b>: 3 males, 2 females, <b>Japan</b>, <b>Hokkaido</b>, Shiriuchi-cho, hygropetric zone beside Idesu-gawa, 12.vii.2008, T. Ito (CBM-ZI 135131–135135, on slides).</p> <p> <b>Additional records</b> (other than those of Kjaerandsen and Ito 2009): <b>Japan, Honshu, Niigata</b>: 42 males, 12 females, Itoigawa-shi, Kotaki-gawa, 300–400 m above sea level (a.s.l.), 14.viii.1998, T. Hattori. <b>Toyama</b>: 3 males, Nanto-shi, Taira-mura, Nashidani-gawa, 450 m a.s.l., 30.vii.1995, T. Hattori. <b>Shizuoka</b>: 10 males, 2 females, Shizuoka-shi, Nyujima, 400 m a.s.l., hygropetric zone, 5.vii.1989, T. Hattori; 10 males, same locality, 11.vi.1999, T. Hattori; 2 males, same locality, 18.vi.2001, T. Hattori; 18 males, 2 females, Shizuoka-shi, Yugashima, 400 m a.s.l., hygropetric zone, 30.viii.2005, T. Hattori; 3 males, 1 female, Shizuoka-shi, Akazawa, hygropetric zone, 2.ix.2009, T. Hattori; 1 male, same locality, 19.ix.2013, T. Hattori & T. Ito; 9 males, 4 females, Hamamatsu-shi, Komyo-san, 29.viii.2009, T. Torii. <b>Aichi</b>: 5 males, 2 females, Shinshiro-shi, Horai, 4.viii.1998, H. Nishimoto. <b>Shiga</b>: 2 males, Higashi-omi-shi, Eigenji, Kanzaki-gawa, hygropetric zone near Kazakoshi-bashi, 9.ix.2014, T. Ito; 8 males, 1 female, same locality, 11.vi.2016, T. Ito. <b>Shikoku</b>, Kochi: 2 males, Tosa-shimizu-shi, Akasho, small stream, 21.v.1999, T. Ito & A. Ohkawa. <b>Kyushu</b>, Nagasaki: 1 male, Isahaya-shi, Korai-cho, Todoroki-kyo, 18.ix.2000, A. Ohkawa. <b>Yakushima</b>: 1 male, 2 females, Nagata, Hamanaka, Nakano-bashi, 30.viii.1986, Y. Takemon; 1 female, unnamed tributary of Miyanoura-gawa, 10.v.2006, T. Ito.</p> <p> <b>Remarks</b>. The males of this species are distinguished from other congeneric species by the large, stout inferior appendages and long oval subgenital plate with tiny U- or V-shaped excavation apically.</p> <p> <b>Habitat</b> (Fig. 4 A). Adults of this species were collected from hygropetric zones and fast flowing streams with large rocks.</p> <p> <b>Distribution</b> (Fig. 5). Japan (Hokkaido, Honshu, Shikoku, Kyushu, Yakushima). New to Shikoku, Kyushu and Yakushima.</p> <p> <b>Japanese name</b>. Mikuro-himetobikera.</p>Published as part of <i>Ito, Tomiko, 2017, The genus Microptila Ris (Trichoptera, Hydroptilidae) in Japan, pp. 104-112 in Zootaxa 4232 (1)</i> on pages 105-107, DOI: 10.11646/zootaxa.4232.1.7, <a href="http://zenodo.org/record/292743">http://zenodo.org/record/292743</a>
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