6,348 research outputs found
Sharp transition from ripple patterns to a flat surface for ion beam erosion of Si with simultaneous co-deposition of iron
No full textWe investigate pattern formation on Si by sputter erosion under simultaneous co-deposition of Fe atoms, both at off-normal incidence, as function of the Fe surface coverage. The patterns obtained for 5 keV Xe ion irradiation at 30° incidence angle are analyzed with atomic force microscopy. Rutherford backscattering spectroscopy of the local steady state Fe content of the Fe-Si surface layer allows a quantitative correlation between pattern type and Fe coverage. With increasing Fe coverage the patterns change, starting from a flat surface at low coverage (1.8×1016 Fe/cm2). Our results confirm the observations by Macko et al. for 2 keV Kr ion irradiation of Si with Fe co-deposition. In particular, we also find a sharp transition from pronounced ripple patterns with large amplitude (rms roughness ∼ 18 nm) to a rather flat surface (rms roughness ∼ 0.5 nm). Within this transition regime, we also observe the formation of pill bug structures, i.e. individual small hillocks with a rippled structure on an otherwise rather flat surface. The transition occurs within a very narrow regime of the steady state Fe surface coverage between 1.7 and 1.8×1016 Fe/cm2, where the composition of the mixed Fe-Si surface layer of about 10 nm thickness reaches the stoichiometry of FeSi2. Phase separation towards amorphous iron silicide is assumed as the major contribution for the pattern formation at lower Fe coverage and the sharp transition from ripple patterns to a flat surface
ta‐C/Si heterojunction diodes with apparently giant ideality factors
No full textUntil now, a common feature of many wide band gap heterojunction diodes is an unexplained large ideality factor n > 2. In this context we investigate the diode characteristics of heterojunction diodes consisting of a crystalline semiconductor material such as ZnO covered with a thin semiconducting film of amorphous or disordered material. As thin disordered film we use sp(2)-bonded turbostratic boron nitride. These heterojunctions exhibit a pronounced rectifying behavior, low saturation current, and low parasitic currents. Moreover, we observe an apparently giant ideality factor reaching values of n > 100. As a consequence, the turn-on voltage is around 5-10 V and the I-V curves can be measured for bias voltages between +/- 80 V without reaching saturation or electrical breakdown. We present a quantitative model for the unusual diode characteristics of these metal- amorphous semiconductor-semiconductor diodes. We demonstrate that the I-V characteristics of the heterojunctions are well described by a serial arrangement of an ideal Schottky diode, a Frenkel-Poole type resistance, and an Ohmic contact resistance, emulating a p-n- or Schottky diode characteristic with giant ideality factor. We propose that heterojunctions exhibiting apparently large ideality factors n >> 2 may possess an interfacial disordered or amorphous layer with Frenkel-Poole conduction properties. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3212987
The Future of Canadian Climate Policy — with Marc Lee
No full textMarc Lee is a Senior Economist at the Canadian Centre for Policy Alternatives\u27 BC Office. In addition to tracking federal and provincial budgets and economic trends, Marc has published on a range of topics from poverty and inequality to globalization and international trade to public services and regulation. Marc is the Co-Director of the Climate Justice Project, a research partnership with UBC\u27s School of Community and Regional Planning that examines the links between climate change policies and social justice.Resources:Climate Justice Project: www.policyalternatives.ca/projects/cli…tice-projectMarc Lee\u27s Posts on Policy Note: www.policynote.ca/author/marclee/Canadian Centre for Policy Alternatives: www.policyalternatives.ca/Marc\u27s Twitter: twitter.com/MarcLeeCCPA International Panel on Climate Change, 2021 report: www.ipcc.ch/report/ar6/wg1
Climate Justice & Inequality: The Future of Canadian Climate Policy — with Marc Lee
No full textMarc Lee is a Senior Economist at the Canadian Centre for Policy Alternatives\u27 BC Office. In addition to tracking federal and provincial budgets and economic trends, Marc has published on a range of topics from poverty and inequality to globalization and international trade to public services and regulation. Marc is the Co-Director of the Climate Justice Project, a research partnership with UBC\u27s School of Community and Regional Planning that examines the links between climate change policies and social justice.Resources: Climate Justice Project: https://www.policyalternatives.ca/projects/climate-justice-projectMarc Lee\u27s Posts on Policy Note: https://www.policynote.ca/author/marclee/Canadian Centre for Policy Alternatives: https://www.policyalternatives.ca/Marc\u27s Twitter: https://twitter.com/MarcLeeCCPA International Panel on Climate Change, 2021 report: https://www.ipcc.ch/report/ar6/wg1
Modeling the diode characteristics of boron nitride/silicon carbide heterojunctions
No full textIn this work, we investigate metal-amorphous semiconductor-semiconductor diodes made up of boron nitride/silicon carbide (BN/SiC) heterojunctions. We show that a general conduction model can be applied to this system to explain the measured current-voltage diode characteristics. The conduction model is based on a serial arrangement of a voltage dependent Frenkel-Poole resistance and an ideal Schottky diode. This model is refined to reflect the presence of an amorphous interface layer with thicknesses of about 7(2) nm between BN films and SiC substrates obtained from high resolution cross-section transmission electron microscopy measurements. We demonstrate that this results in an extended Frenkel-Poole and ideal diode model leading to an almost perfect agreement with the measured I-V characteristics of BN/SiC heterojunctions. (c) 2010 American Institute of Physics. [doi:10.1063/1.3488811]Science Foundation Ireland [07/IN. 1/I929.
The role of phase separation for self-organized surface pattern formation by ion beam erosion and metal atom co-deposition
No full textWe investigate the ripple pattern formation on Si surfaces at room temperature during normal incidence ion beam erosion under simultaneous deposition of different metallic co-deposited surfactant atoms. The co-deposition of small amounts of metallic atoms, in particular Fe and Mo, is known to have a tremendous impact on the evolution of nanoscale surface patterns on Si. In previous work on ion erosion of Si during co-deposition of Fe atoms, we proposed that chemical interactions between Fe and Si atoms of the steady-state mixed FexSi surface layer formed during ion beam erosion is a dominant driving force for self-organized pattern formation. In particular, we provided experimental evidence for the formation of amorphous iron disilicide. To confirm and generalize such chemical effects on the pattern formation, in particular the tendency for phase separation, we have now irradiated Si surfaces with normal incidence 5 keV Xe ions under simultaneous gracing incidence co-deposition of Fe, Ni, Cu, Mo, W, Pt, and Au surfactant atoms. The selected metals in the two groups (Fe, Ni, Cu) and (W, Pt, Au) are very similar regarding their collision cascade behavior, but strongly differ regarding their tendency to silicide formation. We find pronounced ripple pattern formation only for those co deposited metals (Fe, Mo, Ni, W, and Pt), which are prone to the formation of mono and disilicides. In contrast, for Cu and Au co-deposition the surface remains very flat, even after irradiation at high ion fluence. Because of the very different behavior of Cu compared to Fe, Ni and Au compared to W, Pt, phase separation toward amorphous metal silicide phases is seen as the relevant pro-cess for the pattern formation on Si in the case of Fe, Mo, Ni, W, and Pt co-deposition.Deutsche Forschungsgemeinschaft [HO1125/20-1,2
Effective reduction of AlN defect luminescence by fluorine implantation
No full textWe report on the effective reduction of AlN host lattice defect cathodoluminescence by high dose ion implantation of light elements such as fluorine as well as chlorine and neon with peak concentrations of 1 at.%. In order to distinguish between luminescence suppression in the visible to luminescence quenching due to radiation damage, all samples were additionally implanted with europium at fluences of 1.10(13) ions/cm(2). After annealing the samples at 1373 K under vacuum conditions cathodoluminescence spectra were recorded at room temperature (300 K) and at cryogenic temperature (12 K). These investigations reveal that different light ion species have different influences on the defect luminescence of the AlN host lattice which is likely due to selective passivation of these defects. The best ratio of defect luminescence suppression to radiation damage induced luminescence quenching is achieved in the case of fluorine co-doping. (C) 2011 Elsevier B.V. All rights reserved
UKMARC AMC: Draft Rev 4.0: UK MARC format for archives and manuscripts control (UK MARC AMC)
No full textThis draft is the first attempt to establish a UK MARC specifically for Archives and Manuscripts Control since the British Library indicated that it would countenance such extensions to the national UK MARC format. In order to keep consistency with the general UK MARC format, standard UK MARC subject fields are not included in this document, since they should be taken from the latest version of the UK MARC manual. {A note of them should perhaps be included in UK MARC AMC.} {NB Text in braces is intended to be explanatory material for readers of this draft}. Certain other fields have not been included that might occasionally be used in the cataloguing of archival materials but would generally only be used for such materials in organizations which were combining archive
databases with library databases. This MARC version is intended for use with descriptions of archive or anuscript material that follow, or fit, the traditional style of cataloguing: we assume that these will normally relate
to paper or parchment originals. It is not intended for use with descriptions of other kinds of material. For these, fields may be drawn from the appropriate UK MARC document. MARC versions for use with archives in special formats should be developed, in order to complete the full range of facilities available to archivists and curators
MARC 21 para recursos contínuos
No full textTranslation and adaptation of the MARC 21 Format for Bibliographic Data, and MARC 21 Format for Holdings Data, Network Development and MARC Standards Office, Library of Congress, USA, by Angela Salles. Rio de Janeiro, 2010. 2 v. V.1 MARC 21 format for bibliographic data (updated until October 2010). V.2 MARC 21 format for data collection (Holdings) (updated until October 2008)
MARC 21 para recursos contínuos.
No full textTradução e adaptação de MARC 21 Format for Bibliographic Data e MARC 21 Format for Holdings Data, da Network Development and MARC Standards Office, da Library of Congress, USA, por Angela Salles
- …
