1,720,994 research outputs found
Voltage Controlled Electron Spin Dynamics In Resonant Tunnelling Devices
No full textWe investigate the electron spin dynamics in a p-type GaAs/AlAs resonant tunnelling device by measuring the time- and polarized-resolved photoluminescence (PL) from the GaAs quantum well under a high magnetic field (15 T). The voltage dependence of the PL transients have revealed various tunnelling processes with different time constants that give rise to distinct spin-polarized carriers injected into the double-barrier structure. © 2014 IOP Publishing Ltd.4716Zutic, I., Fabian, J., Sarma, S.D., Spintronics: Fundamentals and applications (2004) Reviews of Modern Physics, 76 (2), pp. 323-410. , DOI 10.1103/RevModPhys.76.323Fabian, J., Matos-Abiague, A., Ertler, C., Stano, P., Zutic, I., (2010) Acta Phys. Slov., 57, pp. 565-907. , 10.2478/v10155-010-0086-8 0323-0465Wu, M.W., Jiang, J.H., Weng, M.Q., (2010) Phys. Rep., 493, p. 61. , 10.1016/j.physrep.2010.04.002 0370-1573Ohno, Y., Young, D.K., Beschoten, B., Matsukura, F., Ohno, H., Awschalom, D., (1999) Nature, 402, p. 790. , 10.1038/45509Fiederling, R., Keim, M., Reuscher, G., Ossau, W., Schmidt, G., Waag, A., Molenkamp, L.W., (1999) Nature, 402, p. 787. , 10.1038/45502Farshchi, R., Ramsteiner, M., (2013) J. Appl. Phys., 113. , 10.1063/1.4802504 191101Akiho, T., Shan, J., Liu, H., Matsuda, K., Yamamoto, M., Uemura, T., (2013) Phys. Rev., 87. , 10.1103/PhysRevB.87.235205 B 235205Yu, L., Voskoboynikov, O., Time-resolved spin filtering in semiconductor symmetric resonant barrier structures (2005) Journal of Applied Physics, 98 (2), pp. 1-5. , DOI 10.1063/1.1994945, 023716Slobodskyy, A., Gould, C., Slobodskyy, T., Becker, C.R., Schmidt, G., Molenkamp, L.W., (2003) Phys. Rev. Lett., 90. , 10.1103/PhysRevLett.90.246601 246601Ertler, C., Potz, W., (2011) Phys. Rev., 84. , 10.1103/PhysRevB.84.165309 B 165309Wojcik, P., Adamowski, J., Wołoszyn, M., Spisak, B.J., (2013) Appl. Phys. Lett., 102. , 10.1063/1.4811836 242411De Carvalho, H.B., Brasil, M.J.S.P., Lopez-Richard, V., Galvao Gobato, Y., Marques, G.E., Camps, I., Dacal, L.C.O., Hill, G., Electric-field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices (2006) Physical Review B - Condensed Matter and Materials Physics, 74 (4), p. 041305. , http://oai.aps.org/oai?verb=GetRecord&Identifier=oai:aps.org: PhysRevB.74.041305&metadataPrefix=oai_apsmeta_2, DOI 10.1103/PhysRevB.74.041305De Carvalho, H.B., Galvao Gobato, Y., Brasil, M.J.S.P., Lopez-Richard, V., Marques, G.E., Camps, I., Henini, M., Hill, G., Voltage-controlled hole spin injection in nonmagnetic GaAs AlAs resonant tunneling structures (2006) Physical Review B - Condensed Matter and Materials Physics, 73 (15), pp. 1-9. , http://oai.aps.org/oai?verb=GetRecord&Identifier=oai:aps.org: PhysRevB.73.155317&metadataPrefix=oai_apsmeta_2, DOI 10.1103/PhysRevB.73.155317, 155317De Carvalho, H.B., Brasil, M.J.S.P., Galvão Gobato, Y., Marques, G.E., Galeti, H.V.A., Henini, M., Hill, G., (2007) Appl. Phys. Lett., 90, p. 62120. , 10.1063/1.2472522Dos Santos, L.F., Galvao Gobato, Y., Marques, G.E., Brasil, M.J.S.P., Henini, M., Airey, R., Light controlled spin polarization in asymmetric n -type resonant tunneling diode (2007) Applied Physics Letters, 91 (7), p. 073520. , DOI 10.1063/1.2772662Dos Santos, L.F., Galvao Gobato, Y., Lopez-Richard, V., Marques, G.E., Brasil, M.J.S.P., Henini, M., Airey, R.J., Polarization resolved luminescence in asymmetric n -type GaAsAlGaAs resonant tunneling diodes (2008) Applied Physics Letters, 92 (14), p. 143505. , DOI 10.1063/1.2908867Galvão Gobato, Y., (2011) Appl. Phys. Lett., 99. , 10.1063/1.3668087 233507Mal'Shukov, A.G., Chu, C.S., (2007) Phys. Rev., 76. , 10.1103/PhysRevB.76.245326 B 245326Murayama, A., Furuta, T., Hyomi, K., Souma, I., Oka, Y., Dagnelund, D., Buyanova, I.A., Chen, W.M., (2007) Phys. Rev., 75. , 10.1103/PhysRevB.75.195308 B 195308Talalaev, V.G., Tomm, J.W., Zakharov, N.D., Werner, P., Gösele, U., Novikov, B.V., Sokolov, A.S., Cirlin, G.E., (2008) Appl. Phys. Lett., 93. , 10.1063/1.2963973 031105Park, J., Murayama, A., Souma, I., Oka, Y., Dangnelund, D., Buyanova, I.A., Chen, W., (2008) Japan. J. Appl. Phys., 47, p. 3533. , 10.1143/JJAP.47.3533 0021-4922Kayanuma, K., Seo, K., Nishibayashi, K., Murayama, A., Oka, Y., Buyanova, I.A., Chen, W.M., (2006) J. Lumin., 119-120, p. 418. , 10.1016/j.jlumin.2006.01.061 0022-2313Ł, K., Nawrocki, M., Ganiere, J.-D., Deveaud, B., Janik, E., (2004) Semicond. Sci. Technol., 19 (4), p. 380. , 10.1088/0268-1242/19/4/125 0268-1242 125Syperek, M., Leszczyski, P., Misiewicz, J., Pavelescu, E.M., Gilfert, C., Reithmaier, J.P., (2010) Appl. Phys. Lett., 96. , 10.1063/1.3280384 011901Gong, J., Liang, X.X., Ban, S.L., Dynamics of spin-dependent tunneling through a semiconductor double-barrier structure (2007) Journal of Applied Physics, 102 (7), p. 073718. , DOI 10.1063/1.2794378Glazov, M.M., Alekseev, P.S., Odnoblyudov, M.A., Chistyakov, V.M., Tarasenko, S.A., Yassievich, I.N., Spin-dependent resonant tunneling in symmetrical double-barrier structures (2005) Physical Review B - Condensed Matter and Materials Physics, 71 (15), pp. 1-5. , http://oai.aps.org/oai/?verb=ListRecords&metadataPrefix= oai_apsmeta_2&set=journal:PRB:71, DOI 10.1103/PhysRevB.71.155313, 155313Galeti, H.V.A., De Carvalho, H.B., Brasil, M.J.S.P., Galvão Gobato, Y., Lopez-Richard, V., Marques, G.E., Henini, M., Hill, G., (2008) Phys. Rev., 78. , 10.1103/PhysRevB.78.165309 B 165309Van Hoof, C., Goovaerts, E., Borghs, G., (1992) Phys. Rev., 46, p. 6982. , 10.1103/PhysRevB.46.6982 0163-1829 BArora, A., Mandal, A., Chakrabarti, S., Ghosh, S., (2013) J. Appl. 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Effects Of Be Acceptors On The Spin Polarization Of Carriers In P-i-n Resonant Tunneling Diodes
Full text linkIn this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ∼20meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ∼-75% at 15T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators. © 2014 AIP Publishing LLC.1165Fabian, J., Matos-Abiague, A., Ertler, C., Stano, P., Zutic, I., (2007) Acta Phys. Slovaca, 57, p. 565. , 10.2478/v10155-010-0086-8Zutic, I., Fabian, J., Sarma, S.D., (2004) Rev. Mod. Phys., 76, p. 323. , 10.1103/RevModPhys.76.323Glazov, M.M., Alekseev, P.S., Adnoblyudov, O.M., Chistyakov, V.M., Tarasenko, S.A., Yassievich, I.N., (2005) Phys. Rev. B, 71, p. 155313. , 10.1103/PhysRevB.71.155313Slobodskyy, A., Gould, C., Slobodskyy, T., Becker, C.R., Schmidt, G., Molenkamp, L.W., (2003) Phys. Rev. Lett., 90, p. 246601. , 10.1103/PhysRevLett.90.246601Carvalho, H.B.D., Brasil, M.J.S.P., Lopez-Richard, V., Gobato, Y.G., Marques, G.E., Camps, I., Dacal, L.C.O., Hill, G., (2006) Phys. Rev. B, 74, p. 041305. , 10.1103/PhysRevB.74.041305Carvalho, H.B.D., Gobato, Y.G., Brasil, M.J.S.P., Lopez-Richard, V., Marques, G.E., Camps, I., Henini, M., Hill, G., (2006) Phys. Rev. B, 73, p. 155317. , 10.1103/PhysRevB.73.155317Carvalho, H.B.D., Brasil, M.J.S.P., Gobato, Y.G., Marques, G.E., Galeti, H.V.A., Henini, M., Hill, G., (2007) Appl. Phys. Lett., 90, p. 62120. , 10.1063/1.2472522Santos, L.F.D., Gobato, Y.G., Marques, G.E., Brasil, M.J.S.P., Henini, M., Airey, R., (2007) Appl. Phys. Lett., 91, p. 073520. , 10.1063/1.2772662Santos, L.F.D., Gobato, Y.G., Marques, G.E., Brasil, M.J.S.P., Henini, M., Airey, R., (2008) Appl. Phys. Lett., 92, p. 143505. , 10.1063/1.2908867Ruth, M., Gould, C., Molenkamp, L.W., (2011) Phys. Rev. B, 83, p. 155408. , 10.1103/PhysRevB.83.155408Ohya, S., Takata, K., Tanaka, M., (2011) Nat. Phys., 7, p. 342. , 10.1038/nphys1905Gobato, Y.G., Galeti, H.V.A., Santos, L.F.D., López-Richard, V., Cesar, D.F., Marques, G.E., Brasil, M.J.S.P., Airey, R.J., (2011) Appl. Phys. Lett., 99, p. 233507. , 10.1063/1.3668087Gordo, V.O., Herval, L.K.S., Galeti, H.V.A., Gobato, Y.G., Brasil, M.J.S.P., Marques, G.E., Henini, M., Airey, R.J., (2012) Nanoscale Res. Lett., 7, p. 592. , 10.1186/1556-276X-7-592Galeti, H.V.A., Bezerra, A.T., Gobato, Y.G., Brasil, M.J.S.P., Taylor, D., Henini, M., (2013) J. Phys. D, 46, p. 505313. , 10.1088/0022-3727/46/50/505313Galeti, H.V.A., Brasil, M.J.S.P., Gobato, Y.G., Henini, M., (2014) J. Phys. 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Structural And Optical Properties Of Inp Quantum Dots Grown On Gaas (001)
No full textWe present structural and optical properties of type-II self-assembled InP/GaAs quantum dots using different techniques. The results reveal that the uncapped InP dots present an efficient optical emission and are partially relaxed: strain relaxation increases with the amount of InP deposited. The photoluminescence spectra show two optical emission bands associated to the quantum dots, in agreement with the bi-modal dot-height distribution observed by atomic force microscopy. We observed distinct photoluminescence results for uncapped and capped samples, which are mainly attributed to surface state and strain relaxation effects. A remarkable result is the large blue shift of the optical emission band from uncapped sample as compared to capped one for increasing excitation intensities. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.42238240Pistol, M.-E., Carlsson, N., Persson, C., Seifert, W., Samuelson, L., (1995) Appl. Phys. Lett, 67, p. 1438Persson, J., Hakanson, U., Johansson, M.K.J., Samuelson, L., Pistol, M.-E., (2005) Phys. Rev. B, 72, p. 085302Nakaema, M.K.K., Iikawa, F., Brasil, M.J.S.P., Ribeiro, E., Medeiros-Ribeiro, G., Carvalho Jr., W., Maialle, M.Z., Degani, M.H., (2002) Appl. Phys. Lett, 81, p. 2743de Godoy, M.P.F., Gomes, P.F., Nakaema, M.K.K., Caetano, R.A., Iikawa, F., Brasil, M.J.S.P., Bortoleto, J.R.R., Marques, G.E., (2006) Phys. Rev. B, 73, p. 33309Bortoleto, J.R.R., Gutiérrez, H.R., Cotta, M.A., Bettini, J., (2005) Appl. Phys. Lett, 87, p. 13105Casey Jr., H.G., Buehler, E., (1977) Appl. Phys. Lett, 30, p. 247Yablonovitch, E., Bhat, R., Zah, C.E., Gmitter, T.J., Koza, M.A., (1992) Appl. Phys. Lett, 60, p. 37
Polarization Resolved Luminescence In Asymmetric N -type Gaasalgaas Resonant Tunneling Diodes
Full text linkWe have investigated the polarized emission from a n -type GaAsAlGaAs resonant tunneling diode under magnetic field. The GaAs contact layer emission shows a large constant negative circular polarization. A similar result is observed for the quantum well, but only when electrons are injected from the substrate, while for inverted biases, the polarization tends to become positive for small voltages and large laser excitation intensities. We believe that the quantum well polarization may be associated to the partial thermalization of minority carriers on the well subbands and is thus critically dependent on the bias-controlled density of carriers accumulated in the well. © 2008 American Institute of Physics.9214Hanbicki, A., Van Erve, O.M.J., Magno, R., Kioseoglou, G., Li, C.H., Jonker, B.T., Itskos, G., Petrou, A., (2003) Appl. Phys. Lett., 82, p. 4092Jiang, X., Wang, R., Shelby, R.M., MacFarlane, R.M., Bank, S.R., Harris, J.S., Parkin, S.S.P., (2005) Phys. Rev. Lett., 94, p. 056601Motsnyi, V.F., Van Dorpe, P., Van Roy, W., Goovaerts, E., Safarov, V.I., Borghs, G., De Boeck, J., (2003) Phys. Rev. B, 68, p. 245319Fiederling, R., Keim, M., Reuscher, G., Ossau, W., Schmidt, G., Waag, A., Molenkamp, L.W., (1999) Nature (London), 402, p. 787Ohno, Y., Young, D.K., Beschoten, B., Matsukura, F., Ohno, H., Awschalom, D., (1999) Nature (London), 402, p. 790Oestreich, M.J., Hübner, M.J., Hägele, D., Klar, P.J., Heimbrodt, W., Rühle, W.W., Ashenford, D.E., Lunn, B., (1999) Appl. Phys. Lett., 74, p. 1251Jonker, B.T., Park, Y.D., Bennett, B.R., Cheong, H.D., Kioseoglou, G., Petrou, A., (2000) Phys. Rev. B, 62, p. 8180Braden, J.G., Parker, J.S., Xiong, P., Chun, S.H., Samarth, N., (2003) Phys. Rev. Lett., 91, p. 056602Mattana, R., George, J.-M., Jaffr̀s, H., Nguyen Van Dau, F., Fert, A., Ĺpine, B., Guivarc'H, A., J́źquel, G., (2003) Phys. Rev. Lett., 90, p. 166601Gruber, T., Keim, M., Fiederling, R., Reuscher, G., Ossau, W., Schmidt, G., Molenkamp, M., Waag, A., (2001) Appl. Phys. Lett., 78, p. 1101Slobodskyy, A., Gould, C., Slobodskyy, T., Becker, C.R., Schmidt, G., Molenkamp, L.W., (2003) Phys. Rev. Lett., 90, p. 246601De Carvalho, H.B., Galvão Gobato, Y., Brasil, M.J.S.P., Lopez-Richard, V., Marques, G.E., Camps, I., Henini, M., Hill, G., (2006) Phys. Rev. B, 73, p. 155317De Carvalho, H.B., Brasil, M.J.S.P., Galvão Gobato, Y., Marques, G.E., Galeti, H.V.A., Henini, M., Hill, G., (2007) Appl. Phys. Lett., 90, p. 062120Dos Santos, L.F., Galvão Gobato, Y., Marques, G.E., Brasil, M.J.S.P., Henini, M., Airey, R., (2007) Appl. Phys. Lett., 91, p. 073520Snelling, M.J., Blackwood, E., MacDonagh, C.J., Harley, R.T., Foxon, C.T.B., (1992) Phys. Rev. B, 45, p. 392
Exciton Binding Energy In Type Ii Quantum Dots
No full textWe investigated the optical properties of self-assembled InP/GaAs quantum dots using continuous-wave and time-resolved photoluminescence spectroscopy. The thermal activation energy, which is directly related to the exciton binding energy in this system, was obtained by photoluminescence measurements as a function of temperature. We obtained thermal activation energies of 6-9 meV for undoped quantum dots and 13 meV for the modulation-doped sample. Those values are in good agreement with calculated results. The dots presented a recombination time of- 0.8-1.1 ns, which is surprisingly small for a type-II system. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.42385388Huffaker, D.L., Park, G., Zou, Z., Shchekin, O.B., Deppe, D.G., (1998) Appl. Phys. Lett, 73 (18), p. 2564Schedelbeck, G., Wegscheider, W., Bichler, M., Abstreiter, G., (1997) Science, 278, p. 1792Lelong, P., Suzuki, K., Bastard, G., Sakaki, H., Arakawa, Y., (2000) Physica E, 7, p. 393Madureira, J.R., de Godoy, M.P.F., Brasil, M.J.S.P., Iikawa, F., to be publishedde Godoy, M.P.F., Gomes, P.F., Nakaema, M.K.K., Caetano, R.A., Iikawa, F., Brasil, M.J.S.P., Bortoleto, J.R.R., Marques, G.E., (2006) Phys. Rev. B, 73 (3), p. 33309Sanguinetti, S., Henini, M., Alessi, M.G., Capizzi, M., Frigeri, P., Franchi, S., (1999) Phys. Rev. B, 60 (11), p. 8276Fafard, S., Raymond, S., Wang, G., Leon, R., Leonard, D., Charbonneau, S., Merz, J.L., Bowers, J.E., (1996) Surf. Sci, 361-362, p. 778Hatami, F., Grundmann, M., Ledentsov, N.N., Heinrichsdorff, F., Heitz, R., Bohrer, J., Bimberg, D., Alferov, Z.I., (1998) Phys. Rev. B, 57 (8), p. 4635Paillard, M., Marie, X., Vanette, E., Amand, T., Kalevich, V.K., Kovsh, A.R., Zhukov, A.E., Ustinov, V.M., (2000) Appl. Phys. Lett, 76, p. 7
Strain Redistribution At The Phase Transition Of Mnas/gaas (001) Films
No full textWe investigated the thermal evolution of the lattice parameters of a MnAs film epitaxially grown on GaAs(001) around its magnetostructural first-order phase transition using x-ray diffraction. Despite the substrate constraint, large variation of one of the in-plane lattice parameters is preserved, typical of bulk MnAs phase transition, during a large temperature range where two phases coexist. We demonstrated that the condition of the constant film length along this direction, in accord to the substrate length, is always fulfilled during the process. The effect is attributed to the gliding of misfit dislocations present on the film. © 2006 American Institute of Physics.8815Žutić, I., Fabian, J., Das Sarma, S., (2004) Rev. Mod. Phys., 76, p. 323Ramsteiner, M., Hao, H.Y., Kawaharazuka, A., Zhu, H.J., Kastner, M., Hey, R., Däweritz, L., Ploog, K.H., (2002) Phys. Rev. B, 66, p. 081304Tanaka, M., Harbinson, J.P., Sands, T., Cheeks, T.L., Keramidas, V.G., Rothberg, G.M., (1994) J. Vac. Sci. Technol. B, 12, p. 1091Tanaka, M., Harbinson, J.P., (1994) Appl. Phys. Lett., 65, p. 1964Plake, T., Ramsteiner, M., Kaganer, V.M., Jenichen, B., Kästner, M., Däweritz, L., Ploog, K.H., (2002) Appl. Phys. Lett., 80, p. 2523Kaganer, V.M., Jenichen, B., Schippan, F., Braun, W., Däweritz, L., Ploog, K.H., (2000) Phys. Rev. Lett., 85, p. 341Iikawa, F., Brasil, M.J.S.P., Couto, O.D.D., Adriano, C., Giles, C., Däweritz, L., (2004) Appl. Phys. Lett., 85, p. 2250Song, J.H., Cui, Y., Lee, J.J., Ketterson, J.B., (2005) Appl. Phys. Lett., 87, p. 092504Däweritz, L., Herrmann, C., Mohanty, J., Hesjedal, T., Ploog, K.H., Bauer, E., Locatelli, A., Heun, S., (2005) J. Vac. Sci. Technol. B, 23, p. 1759Iikawa, F., Brasil, M.J.S.P., Adriano, C., Couto, O.D.D., Giles, C., Santos, P.V., Däweritz, L., Sanvito, S., (2005) Phys. Rev. Lett., 95, p. 077203Kaganer, V.M., Jenichen, B., Schippan, F., Braun, W., Däweritz, L., Ploog, K.H., (2002) Phys. Rev. B, 66, p. 045305Schippan, F., Trampert, A., Däweritz, L., Ploog, K.H., (1999) J. Vac. Sci. Technol. B, 17, p. 1716Giles, C., Yokaichia, F., Kycia, S.W., Sampaio, L.C., Ardiles-Saraiva, D.C., Franco, M.K.K., Neuenschwander, R.T., (2003) J. Synchrotron Radiat., 10, p. 430Kästner, M., Herrmann, C., Däweritz, L., Ploog, K.H., (2002) J. Appl. Phys., 92, p. 5711Iikawa, F., Santos, P.V., Kästner, M., Schippan, F., Däweritz, L., (2002) Phys. Rev. B, 65, p. 20532
Light Controlled Spin Polarization In Asymmetric N -type Resonant Tunneling Diode
Full text linkThe authors have observed a strong dependence of the circular polarization degree from the quantum well emission in an asymmetric n -type GaAsAlAsAlGaAs resonant tunneling diode on both the laser excitation intensity and the applied bias voltage. The sign of the circular polarization can be reversed by increasing the light excitation intensity when the structure is biased with voltages slightly larger than the first electron resonance. The variation of polarization is associated with a large density of photogenerated holes accumulated in the quantum well, which is enhanced due to the asymmetry of the structure. © 2007 American Institute of Physics.917Hanbicki, A., Van Erve, O.M.J., Magno, R., Kioseoglou, G., Li, C.H., Jonker, B.T., Itskos, G., Petrou, A., (2003) Appl. Phys. Lett., 82, p. 4092Jiang, X., Wang, R., Shelby, R.M., MacFarlane, R.M., Bank, S.R., Harris, J.S., Parkin, S.S.P., (2005) Phys. Rev. Lett., 94, p. 056601Motsnyi, V.F., Van Dorpe, P., Van Roy, W., Goovaerts, E., Safarov, V.I., Borghs, G., De Boeck, J., (2003) Phys. Rev. B, 68, p. 245319Fiederling, R., Keim, M., Reuscher, G., Ossau, W., Schmidt, G., Waag, A., Molenkamp, L.W., (1999) Nature (London), 402, p. 787Ohno, Y., Young, D.K., Beschoten, B., Matsukura, F., Ohno, H., Awschalom, D., (1999) Nature (London), 402, p. 790Oestreich, M.J., Hübner, M.J., Hägele, D., Klar, P.J., Heimbrodt, W., Rühle, W.W., Ashenford, D.E., Lunn, B., (1999) Appl. Phys. Lett., 74, p. 1251Jonker, B.T., Park, Y.D., Bennett, B.R., Cheong, H.D., Kioseoglou, G., Petrou, A., (2000) Phys. Rev. B, 62, p. 8180Braden, J.G., Parker, J.S., Xiong, P., Chun, S.H., Samarth, N., (2003) Phys. Rev. Lett., 91, p. 056602Mattana, R., George, J.-M., Jaffr̀s, H., Nguyen Van Dau, F., Fert, A., Ĺpine, B., Guivarc'H, A., J́źquel, G., (2003) Phys. Rev. Lett., 90, p. 166601Gruber, Th., Keim, M., Fiederling, R., Reuscher, G., Ossau, W., Schmidt, G., Molenkamp, M., Waag, A., (2001) Appl. Phys. Lett., 78, p. 1101Slobodskyy, A., Gould, C., Slobodskyy, T., Becker, C.R., Schmidt, G., Molenkamp, L.W., (2003) Phys. Rev. Lett., 90, p. 246601De Carvalho, H.B., Galvão Gobato, Y., Brasil, M.J.S.P., Lopez-Richard, V., Marques, G.E., Camps, I., Henini, M., Hill, G., (2006) Phys. Rev. B, 73, p. 155317De Carvalho, H.B., Brasil, M.J.S.P., Galvão Gobato, Y., Marques, G.E., Galeti, H.V.A., Henini, M., Hill, G., (2007) Appl. Phys. Lett., 90, p. 62120Buhmann, H., Mansouri, L., Wang, J., Beton, P.H., Mori, N., Eaves, L., Henini, M., Potemski, M., (1995) Phys. Rev. B, 51, p. 7969Teran, F.J., Eaves, L., Mansouri, L., Buhmann, H., Maude, D.K., Potemski, M., Henini, M., Hill, G., (2005) Phys. Rev. B, 71, p. 161309Glasberg, S., Finkelstein, G., Shtrikman, H., Bar-Joseph, I., (1999) Phys. Rev. B, 59, p. 10425Vanhoucke, T., Hayne, M., Henini, M., Moshchalkov, V.V., (2002) Phys. Rev. B, 65, p. 041307Marie, X., Amand, T., Le Jeune, P., Paillard, M., Renucci, P., Golub, L.E., Dymnikov, V.D., Ivchenko, E.L., (1999) Phys. Rev. B, 60, p. 5811Van Kesteren, H.W., Cosman, E.C., Van Der Poel, W.A.J.A., Foxon, C.T., (1990) Phys. Rev. B, 41, p. 528
Transport And Magnetotransport Transition Of Thin Co Films Grown On Si
No full textThin Co films deposited onto p-type Si substrates show a marked transition on their transport properties for temperatures around 250 K. For temperatures higher than 250 K, the planar conduction measured in our samples changes from electronic to hole-like and the film resistance undergoes a clear drop. The transition is also observed by a marked change of the magnetotransport properties of the studied films. This effect can be explained by a conduction channel switching from the upper metallic film to the Si hole inversion layer as we increase the sample temperature. We show that this channel switching may be controlled by applying an external bias voltage to the structure. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.2011023612365Prinz, G.A., (1999) J. Magn. Magn. Mater., 200, p. 57Popovic, D., Fowler, A.B., Washburn, S., (1997) Phys. Rev. Lett., 79, p. 1543Kravchenko, S.V., Kravchenko, G.V., Furneaux, J.E., Pudalov, V.M., D'Iorio, M., (1994) Phys. Rev. B, 50, p. 8093Bagwell, P.F., Park, S.L., Yen, A., Antoniadis, D.A., Smith, H.I., Orlando, T.P., Kastner, M.A., (1992) Phys. Rev. B, 45, p. 9214Tang, J., Dai, J., Wang, K., Zhou, W., Ruzycki, N., Diebold, U., (2002) J. Appl. Phys. D, 91, p. 8411Pakhomov, A.B., Denardin, J.C., De Lima, O.F., Knobel, M., Missell, F.P., (2001) J. Magn. Magn. Mater., 226-230, pp. 1631-1632Knobel, M., Denardin, J.C., Carvalho, H.B., Brasil, M.J., Missell, F.P., Pakhomov, A.B., (2001) Phys. Stat. Sol. (a), 1, pp. 177-188Carvalho, H.B., Brasil, M.J.S.P., Cotta, M.A., Knobel, M., Mater. Sci. Forum, p. 403Metastable, J., (2002) Nanocryst. Mater., 14, pp. 111-116Markiewicz, R.S., Harris, L.A., (1981) Phys. Rev. Lett., 46, p. 1149Li, M.F., Wong, K.H., (1999) J. Magn. Magn. Mater., 197, p. 31Dai, J., Spinu, L., Wang, K.-Y., Malkinski, L., Tang, J., (2000) J. Phys. D, 33, pp. L65Chen, G., (2003) Appl. Phys. Lett., 82, p. 991Fert, A., Lottis, D.K., (1992) Concise Encyclopedia of Magnetic and Superconducting Materials, p. 287. , Ed. J. Ivetts, Pergamon Press, (London/Oxford)Denardin, J.C., Pakhomov, A.B., Knobel, M., Liu, H., Zhang, X.X., (2001) J. Magn. Magn. Mater., 680, p. 22
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
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