170,137 research outputs found
Diffraction modelling of mobile radio wave propagation in built-up areas
No full textThis thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.This thesis examines theoretical methods of modelling radio wave propagation in built-up areas, with particular application to mobile radio systems Theoretical approaches allow precise quantitative description of the environment in terms of parameters such as mean building heights and densities, in contrast to the ambiguous nature of more conventional empirical models. The models are constructed using both scalar and vector field analysis techniques. The vector analysis is accomplished using the Geometrical Theory of Diffraction to describe the detailed effects of building shape and positioning, particularly for short-range situations. Over longer ranges propagation can often be described in terms of multiple edge diffraction over building rooftops using a scalar field representation. This mechanism accounts well for measured field strength variations, but is time consuming to calculate accurately using standard methods. A rapid algorithm for calculating scalar diffraction over multiple building edges with arbitrary positioning is constructed. This model can be used for deterministic prediction of sector median field strengths including slow fading variations when appropriate building data exists. It is also applicable to terrain diffraction problems. For the case when only average building parameters are available a closed form solution to the problem of multiple diffraction over buildings of equal heights and spacings is derived. The solution is applicable to any antenna heights and so provides a rapid and efficient way to predict gross propagation characteristics. Both models are tested against measurements made in the UHF band and are found to yield good prediction accuracy.This work is funded by the Science and Engineering Research Council under award number 889088999 and by Philips Radio Communication Systems Ltd. of Cambridge under an industrial studentship
Leakage Current Mechanisms in SiGe HBTs Fabricated Using Selective and Nonselective Epitaxy
No full textSiGe heterojunction bipolar transistors (HTBs) have been fabricated using selective epitaxy for the Si collector, followed in the same growth step by nonselective epitaxy for the p+ SiGe base and n-Si emitter cap. DC electrical characteristics are compared with cross-section TEM images to identify the mechanisms and origins of leakage currents associated with the epitaxy in two different types of transistor . In the first type, the polysilicon emitter is smaller than the collector active area, so that the extrinsic base implant penetrates into the single-crystal Si and SiGe around the perimeter of the emitter and the polycrystalline Si and SiGe exrtrinsic base. In these transistors, the Bummel plots are near-ideal and there is no evidence of emitter/collector leakage. In the second type, the collector active area is smaller than the polysilicon emitter, so the extrinsic base implant only penetrates into the polysilicon extrinsic base. In these transistors, the leakage currents observed depend on the base doping level. In transistors with a low doped base, emitter/collector and emitter/base leakage is observed, whereas in transistors with a high doped base only emitter/base leakage is observed. The emitter/collector leakage is explained by punch through o fhte base caused by thinning of the SiGe base at the emitter perimeter. The emitter/base leakeage is shown to be due to Poole-Frenkel mechanism and is explained by penetration of the emitter/base depletion region into the p+ polysilicon extrinsic base at the emitter periphery. Variable collector/base reverse leakage currents are observed and a variety of mechanisms are observed, including Shockley-Read-Hall recombination, trap assisted tunneling, Poole Frenkel and band to band tunneling. These result s are explained by the presence of polysilicon grains on the sidewalls of the field oxide at the collector perimeter
Mmes. C. Keith Beyette, Jospeh M. Perkins and Horace Bonar Ritchie
No full textLeft to right, Mmes. C. Keith Beyette, Jospeh M. Perkins of Eastland and Horace Bonar Ritchie of Athens, Georgia, before luncheon at the Woman\u27s Club.https://mavmatrix.uta.edu/specialcollections_startelegram1950s/23576/thumbnail.jp
110GHz fT Silicon Bipolar Transistors Implemented using Fluorine Implantation for Boron Diffusion Suppression
No full textThis paper investigates how fluorine implantation can be used to suppress boron diffusion in the base of a double polysilicon silicon bipolar transistor and hence deliver a record fT of 110 GHz. Secondary Ion Mass Spectroscopy (SIMS) and transmission electron microscopy are used to characterize the effect of the fluorine implantation energy and dose, the anneal temperature and ambient and the germanium pre-amorphisation implant on the fluorine profiles. These results show that retention of fluorine in the silicon is maximised when a high-energy fluorine implant is combined with a low thermal budget inert anneal. TEM images show that a high-energy fluorine implant into germanium pre-amorphised silicon eliminates the end of range defects from the germanium implant and produces a band of dislocation loops deeper in the silicon at the range of the fluorine implant. Boron SIMS profiles show a suppression of boron diffusion for fluorine doses at and above 5?1014cm-2, but no suppression at lower fluorine doses. This suppression of boron diffusion correlates with the appearance on the SIMS profiles of a fluorine peak at a depth of approximately Rp/2, which is attributed to fluorine trapped in vacancy-fluorine clusters. The introduction of a fluorine implant at this critical fluorine dose into a bipolar transistor process flow leads to an increase in cut-off frequency from 46 to 60GHz. Further optimisation of the base-width and the collector profile leads to a further increase in cut-off frequency to 110GHz. Two factors are postulated to contribute to the suppression of boron diffusion by the fluorine implant. First, the elimination of the germanium end of range defects, and the associated interstitial population, by the fluorine implant, removes a source of transient enhanced diffusion. Second, any interstitials released by the dislocation loops at the range of the fluorine implant would be expected to recombine at the vacancy-fluorine clusters before reaching the boron profile
Movin and Bonar scores assess the same characteristics of tendon histology.
No full textThe Movin scoring system and its validated modifications and the Bonar scoring system are used to classify the histopathological findings of tendinopathy. We compared the reliability of these two different histopathological evaluation scores of tendon tissue. Tendon samples were harvested from 88 individuals (49 men, 39 women; mean age, 58.2 years) who underwent arthroscopic repair of a rotator cuff tear, and from five male patients who died of cardiovascular events (mean age, 69.6 years). A piece of supraspinatus tendon that was not directly involved in the tear was harvested en bloc within the intact middle portion of the tendon. Using hematoxylin and eosin staining and Alcian blue, slides were assessed using Bonar and Movin scores. The intraclass correlation was 0.921 (confidence interval 95% 0.790-0.963). Movin's and Bonar's scores have a high correlation and assess similar characteristics and variables of tendon abnormalities
Ho, every one that thirsteth : anthem / Will C. Macfarlane.
No full textIn binder's collection: Church music
For tenor (or soprano) solo, chorus (SATB) and organ.
Text from Isaiah iv: 1-3, and a hymn by H. Bonar
Dirhodium(II) carboxylates as building blocks. Macrocyclic dimers with vertically stacked Rh-2(4+) units
No full textReaction of Rh-2(OAc)(4) and H2L (=2,7-di- tert-butyl-9,9-dimethyl-4,5-xanthenedicarboxylic acid) in N,N-dimethylaniline gave the singly bridged dimer (AcO)(3)Rh2LRh2(OAc)(3) and three doubly bridged dimers, (AcO)(2)Rh2L2Rh2(OAc)(2), (HL)(AcO)Rh2L2Rh2(OAc)(2), and (HL)(AcO)Rh2L2Rh2(OAc)(HL). Crystal structures of the last two compounds showed a macrocyclic core with a trans arrangement of bridging dicarboxylates, with one or two of the four remaining acetate ligands replaced by a bridging ligand bound through one carboxylate only. The rhodium cages are separated by 4.5 Angstrom in the direction of the Rh-Rh axes, and offset horizontally by 2.5 Angstrom so that a rhodium atom of one cage lies over a carboxylate oxygen of the other, with Rh . . .O distances of 2.248-2.286 Angstrom
Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si1-xGex
No full textThis paper studies how boron transient enhanced diffusion (TED) and boron thermal diffusion in Si1-xGex are influenced by a high-energy fluorine implant at a dose in the range 5 × 1014 cm-2 to 1 × 1016 cm-2. Secondary ion mass spectroscopy (SIMS) profiles of boron marker layers are presented for different fluorine doses and compared with fluorine SIMS profiles and transmission electron microscopy (TEM) micrographs to establish the conditions under which boron diffusion is suppressed. The SIMS profiles show that boron thermal diffusion is reduced above a critical F+ dose of 7-9 × 1014 cm-2, whereas boron TED is suppressed at all doses. Fitting of the measured boron profiles gives suppressions of boron TED diffusion coefficients by factors of 6.8, 10.6, and 12.9 and of boron thermal diffusion coefficient by factors of 1.9, 2.5, and 3.5 for F+ implantation doses of 9 × 1014, 1.4 × 1015, and 2.3 × 1015 cm-2 respectively. The reduction of boron thermal diffusion above the critical fluorine dose correlates with the appearance of a shallow fluorine peak on the SIMS profile in the vicinity of the boron marker layer, which is attributed to vacancy-fluorine clusters. This reduction of boron thermal diffusion is explained by the effect of the clusters in suppressing the interstitial concentration in the Si1-xGex layer. The suppression of boron TED correlates with a deep fluorine peak around the range of the fluorine implant and TEM micrographs show that this peak is due to a band of dislocation loops. This suppression of boron TED is explained by the retention of interstitials in the dislocation loops, which suppresses their backflow to the surface. The fluorine SIMS profiles show that the fluorine concentration in the Si1-xGex layer increases with increasing germanium concentration and that the fluorine concentration in the Si1-xGex layer after anneal is much higher than after implant. This indicates that fluorine is transported into the Si1-xGex layer from the adjacent silicon, and is explained by the lower formation energy for vacancies in Ge than in Si. This accumulation of fluorine in the Si1-xGex layer during anneal is advantageous for devices like SiGe heterojunction bipolar transistors, where the boron must be kept within the Si1-xGex layer. © 2005 IEEE
Going Beyond Counting First Authors in Author Co-citation Analysis
No full textThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
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