27,330 research outputs found
“Smenovekhovtsy” Movement and Realities of Soviet Society of 1920-ies
No full textThe issues linked with the emergence of “smenovekhovtsy” movement among the Russian emigration in the early 1920-ies are considered. Special attention is paid to the analysis of the key position of “smenovekhovtsy” ideology about the inevitable rebirth of the Bolshevik regime in conditions of implementation of the new economic policy (NEP). The author dwells on the reasons for the formation of “smenovekhovtsy” ideas about the future of the country. It is shown that these views did not correspond to the political and socio-economic realities of Soviet society in the 1920-ies. Attention is paid to the evaluation of “smenovekhovtsy” ideology in the light of political struggle in the administration of the Bolshevik party in the period under review. The question of the moral choice of the Russian intelligentsia is raised in connection with the question of the need for cooperation with the Bolsheviks raised by “smenovekhovtsy”. A review of the correspondence of the most famous ideologist of “smenovekhovtsy” N. V. Ustryalov with his personal friend N. A. Tsurikov is made. The author proceeds from the fact that this correspondence is one of the most striking examples of the depth and dramatic split among Russian immigrants in the 1920-ies. It is concluded that the illusory and erroneous ideas about the prospects of development of Soviet society became the cause of the tragic personal fate for many of “smenovekhovtsy” who returned home from exile and became the victims of Stalinist repression of the 1930-ies
Semiconductors V. 38, I. 12
No full textSemiconductors -- December 2004
Volume 38, Issue 12, pp. 1365-1439
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electrical Conductivity and Thermoelectric Power of Liquid Tellurium Doped with 3d Transition Metals
V. M. Sklyarchuk and Yu. O. Plevachuk
pp. 1365-1368 Full Text: PDF (77 kB)
Hg1 – x – y – zCdxMnyZnzTe: A New Alternative to Hg1 – xCdxTe
I. N. Gorbatyuk, A. V. Markov, S. É. Ostapov, and I. M. Rarenko
pp. 1369-1373 Full Text: PDF (69 kB)
Stimulated and Spontaneous Emission of CdxHg1 – xTe Structures in the Range 3.2–3.7 µm at 77 K
Yu. N. Nozdrin, A. V. Okomel'kov, A. P. Kotkov, A. N. Moiseev, and N. D. Grishnova
pp. 1374-1377 Full Text: PDF (54 kB)
Photoluminescence of Electron–Hole Plasma in Semi-Insulating Undoped GaAs
V. F. Kovalenko and S. V. Shutov
pp. 1378-1380 Full Text: PDF (45 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Effect of Hydrogen Sulfide on Photoelectric Characteristics of Al–n-Si–SnO2:Cu–Ag Isotype Heterostructures
S. V. Slobodchikov[dagger], E. V. Russu, É. V. Ivanov, Yu. G. Malinin, and Kh. M. Salikhov
pp. 1381-1383 Full Text: PDF (46 kB)
Photoreflection Studies of Band Offsets at the Heterojunction in Strained Short-Period GaAs/GaAsP Superlattices
L. P. Avakyants, P. Yu. Bokov, T. P. Kolmakova, and A. V. Chervyakov
pp. 1384-1389 Full Text: PDF (79 kB)
Influence of Ultrashort Pulses of Electromagnetic Radiation on Parameters of Metal–Insulator–Semiconductor Structures
V. A. Terekhov, A. N. Man'ko, E. N. Bormontov, V. N. Levchenko, S. Yu. Trebunskikh, E. A. Tutov, and É. P. Domashevskaya
pp. 1390-1393 Full Text: PDF (65 kB)
Traps with Near-Midgap Energies at the Bonded Si/SiO2 Interface in Silicon-on-Insulator Structures
I. V. Antonova, V. P. Popov, V. I. Polyakov, and A. I. Rukovishnikov
pp. 1394-1399 Full Text: PDF (89 kB)
Kinetics of the Growth of an Amorphous Layer at the Surface of Silicon Bombarded with Fast Heavy Ions at Low Temperatures
A. Yu. Azarov
pp. 1400-1401 Full Text: PDF (27 kB)
LOW-DIMENSIONAL SYSTEMS
Formation and Optical Properties of CuInSe2xTe2(1 – x) Nanoparticles in a Silicate Glass Matrix
I. V. Bodnar', N. P. Solovei, V. S. Gurin, and A. P. Molochko
pp. 1402-1408 Full Text: PDF (269 kB)
Intersubband Absorption of Light in Selectively Doped Asymmetric Double Tunnel-Coupled Quantum Wells
V. L. Zerova, V. V. Kapaev, L. E. Vorob'ev, D. A. Firsov, S. Schmidt, E. A. Zibik, A. Seilmeier, and E. Towe
pp. 1409-1415 Full Text: PDF (97 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Size Distribution of Cobalt Nanoclusters in an Amorphous Carbon Matrix
V. I. Ivanov-Omskii, A. V. Kolobov, A. B. Lodygin, and S. G. Yastrebov
pp. 1416-1418 Full Text: PDF (184 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Infrared Light-Emitting Diodes Based on GaInAsSb Solid Solutions Grown from Lead-Containing Solution–Melts
A. P. Astakhova, E. A. Grebenshchikova, É. V. Ivanov, A. N. Imenkov, E. V. Kunitsyna, Ya. A. Parkhomenko, and Yu. P. Yakovlev
pp. 1419-1425 Full Text: PDF (79 kB)
Luminescence Properties of Cylindrical ZnO Microcavities
A. N. Gruzintsev, V. T. Volkov, S. V. Dubonos, M. A. Knyazev, and E. E. Yakimov
pp. 1426-1429 Full Text: PDF (93 kB)
Ultralow Internal Optical Loss in Separate-Confinement Quantum-Well Laser Heterostructures
S. O. Slipchenko, D. A. Vinokurov, N. A. Pikhtin, Z. N. Sokolova, A. L. Stankevich, I. S. Tarasov, and Zh. I. Alferov
pp. 1430-1439 Full Text: PDF (113 kB)Archived web conten
Informetrics on M. N. Srinivas
No full textM. N. Srinivas, the well known sociologist is widely recognised as architect of modern Indian sociology and social anthropology. His publications have been analysed by year, domain, authorship pattern, channels of communication used. Keywords, etc. The results indicate that the papers published by him are of a nature that qualify him to be a 'role model' for the younger generations to emulate.
By the end of 1995, Srinivas had to his credit 144 papers which, included 33 broad papers in sociology and anthropology; 18 papers in social change; 28 papers in village studies; 12 papers on religion; 17 papers on caste and 36 papers of general popular interest. The periods 1958-61 and 1974-77, when Srinivas was 38-41 and 58-61 years old. were his most productive periods with highest publication activity
Semiconductors V. 37, I. 03
No full textSemiconductors -- March 2003
Volume 37, Issue 3, pp. 239-366
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Temperature Dependence of the Band Structure of 3C, 2H, 4H, and 6H SiC Polytypes
S. M. Zubkova, L. N. Rusina, and E. V. Smelyanskaya
pp. 239-248 Full Text: PDF (136 kB)
Fine Structure of the Long-Wavelength Edge of Exciton–Phonon Absorption and Hyperbolic Excitons in Silicon Carbide of 6H Polytype
A. P. Krokhmal'
pp. 249-255 Full Text: PDF (87 kB)
Effect of Gadolinium Impurity on Transmittance and Reflectance of Hg3In2Te6 Crystals
P. M. Gorlei, O. G. Grushka, and Z. M. Grushka
pp. 256-258 Full Text: PDF (46 kB)
Photoelectric Properties of ZnO Films Doped with Cu and Ag Acceptor Impurities
A. N. Gruzintsev, V. T. Volkov, and E. E. Yakimov
pp. 259-262 Full Text: PDF (54 kB)
Arrangement of Arsenic Atoms in the PbTe Lattice
S. A. Nemov, P. P. Seregin, S. M. Irkaev, and N. P. Seregin
pp. 263-265 Full Text: PDF (43 kB)
Polyamidine Supramolecular Structures—a New Class of Photosensitive Polymeric Semiconductors
E. L. Aleksandrova, M. M. Dudkina, and A. V. Ten'kovtsev
pp. 266-270 Full Text: PDF (64 kB)
Thermal Transport of Charge and Polarization of 1.2-eV Luminescence Broad Band in Uniaxially Strained n-GaAs:Te
A. A. Gutkin and M. A. Reshchikov
pp. 271-275 Full Text: PDF (72 kB)
Thermoelectric Figure of Merit in Solid Solutions with Phonon Scattering by Off-Center Impurities
E. A. Gurieva, P. P. Konstantinov, L. V. Prokof'eva, Yu. I. Ravich, and M. I. Fedorov
pp. 276-282 Full Text: PDF (88 kB)
Effect of Annealing in Zn Vapor and Liquid Zn on Photoluminescence of High-Purity Polycrystalline ZnTe
V. S. Bagaev, V. V. Zaitsev, Yu. V. Klevkov, V. S. Krivobok, and E. E. Onishchenko
pp. 283-287 Full Text: PDF (74 kB)
The Role of Tin in Reactions Involving Carbon Interstitial Atoms in Irradiated Silicon
L. I. Khirunenko, O. A. Kobzar', Yu. V. Pomozov, M. G. Sosnin, and N. A. Tripachko
pp. 288-293 Full Text: PDF (85 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Layer Structure of Zn1 – xCdxSe Films Grown by Vapor-Phase Epitaxy from Metal–Organic Compounds on Cd0.92Zn0.08S(0001) Substrates
V. P. Martovitsky, V. I. Kozlovsky, P. I. Kuznetsov, Ya. K. Skasyrsky, and G. G. Yakushcheva
pp. 294-301 Full Text: PDF (136 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Properties of Shallow-Level D–-Centers in Polar Semiconductors
N. I. Kashirina, V. D. Lakhno, V. V. Sychev, and M. K. Sheinkman
pp. 302-306 Full Text: PDF (60 kB)
SEMICONDUCTOR STRUCTURE, INTERFACES, AND SURFACES
On the Modification of a Silicon Surface Studied by Scanning Tunneling Microscopy
V. M. Kornilov and A. N. Lachinov
pp. 307-311 Full Text: PDF (319 kB)
LOW-DIMENSIONAL SYSTEMS
Phonon Spectra of (GaAs)n(Ga1 – xAlxAs)m Superlattices According to the Keating Model
E. N. Prykina, Yu. I. Polygalov, and A. V. Kopytov
pp. 312-313 Full Text: PDF (27 kB)
Luminescence from ZnO Quantum Dots Deposited with Synthetic Opal
A. N. Gruzintsev, V. T. Volkov, G. A. Emel'chenko, I. A. Karpov, V. M. Masalov, G. M. Mikhailov, and E. E. Yakimov
pp. 314-316 Full Text: PDF (81 kB)
Structure of Energy Quantum Levels in a Quantum Dot Shaped as an Oblate Body of Revolution
G. G. Zegrya, O. V. Konstantinov, and A. V. Matveentsev
pp. 317-321 Full Text: PDF (70 kB)
Investigation of the Physical Properties of Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: 1. Photoluminescence
Yu. V. Khabarov
pp. 322-328 Full Text: PDF (90 kB)
Conductivity of One-Dimensional Semiconductor with Periodic Potential
S. D. Beneslavskii, A. A. Elistratov, and S. V. Shibkov
pp. 329-335 Full Text: PDF (95 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Spectra of Photoluminescence from Silicon Nanocrystals
É. B. Kaganovich, É. G. Manoilov, I. R. Basylyuk, and S. V. Svechnikov
pp. 336-339 Full Text: PDF (65 kB)
Kinetics of Growth of Surface Amorphous Layers under Irradiation of Silicon with Low-Energy Light Ions
A. I. Titov, A. Yu. Azarov, and V. S. Belyakov
pp. 340-346 Full Text: PDF (100 kB)
Structure and Optical Properties of C60 Films on Polymer Substrates
*Yu. F. Biryulin, V. N. Zgonnik, E. Yu. Melenevskaya, S. N. Mikov, S. S. Moliver, S. E. Orlov, A. V. Novoselova, V. D. Petrikov, V. V. Rozanov, D. A. Sykmanov, and M. A. Yagovkina
pp. 347-353 Full Text: PDF (160 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Tunnel Emission of Electrons in Photo-Field Detectors and in an Auger Transistor in Very Strong Electric Fields
V. D. Kalganov, N. V. Mileshkina, and E. V. Ostroumova
pp. 354-359 Full Text: PDF (77 kB)
Charge Transport in Superlattices with Low-Strength Barriers and the Problem of a Terahertz Bloch Oscillator
A. A. Andronov, I. M. Nefedov, and A. V. Sosnin
pp. 360-366 Full Text: PDF (84 kB)Archived web conten
Teatral'naja dejatel'nost' N, Ja. Agnivceva v Berline 20-ch godov
No full textThe article focuses on N. Ya. Agnivtsev's theatre work in Berlin in the early 1920s as author of sketches and founder of the cabaret "Vanka-Vstanka"
Numerical investigation of localized exact solutions of the Navier-Stokes equations in pipe flow
No full textThe edge state solution in pipe flow at Re=2200 is calculated numerically. The solution has the form of spatially localized puff-like structure drifting downstream. In the moving frame it is represented by a steady average flow and time-periodic pulsation flow. It is shown, that the Kelvin-Helmholtz instability mechanism is not valid for pulsation generation in the edge state flow
RYDBERG SERIES IN N V
No full textAuthor Institution: U.S. Naval Research Laboratory“Three complete Rydberg series, and , extending to the ionization limit have been observed in the spectrum on N V excited in a low pressure, high voltage condensed capillary discharge. An ionization limit of ev. Has been determined from these Ions series for N V.
Main and Interactive Effects of Diabetes Distress and Stress from Life Events on Overall Psychological Distress
No full textThis study sought to extend previous research by examining rates of three different types of diabetes distress, and whether stress from life events amplified the association between diabetes distress and overall psychological distress in a community-based sample of 119 middle-aged and older adults with type 2 diabetes. Consistent with past research, individuals experienced a moderate level of diabetes distress. However, only some types of diabetes distress were associated with depressive symptoms, independent of stressful life events, whereas all types of diabetes distress were only related to anxious symptoms when stress from life events was also high.This has not been published yet (just accepted). I do not know if there is an embargo period for this journal.Peer reviewe
Аппроксимационные свойства нильпотентных групп
No full textLet π be a set of primes. Recall that a group G is said to be a residually finite π-group if for every nonidentity element a of G there exists a homomorphism of the group G onto some finite π-group such that the image of the element a differs from 1. A group G will be said to be a virtually residually finite π-group if it contains a finite index subgroup which is a residually finite π-group. Recall that an element g in G is said to be π-radicable if g is an m-th power of an element of G for every positive π-number m. Let N be a nilpotent group and let all power subgroups in N are finitely separable. It is proved that N is a residually finite π-group if and only if N has no nonidentity π-radicable elements. Suppose now that π does not coincide with the set Π of all primes. Let π 0 be the complement of π in the set Π. And let T be a π 0 component of N i.e. T be a set of all elements of N whose orders are finite π 0 -numbers. We prove that the following three statements are equivalent: (1) the group N is a virtually residually finite π-group; (2) the subgroup T is finite and quotient group N/T is a residually finite π-group; (3) the subgroup T is finite and T coincides with the set of all π-radicable elements of N
The Author as the Antihero
No full textВ статье соотносятся такие понятия, как автор и антигерой. На примере литературной группировки «проклятых поэтов» исследуется эстетическая проблема сосуществования добра и зла в одном человеке - автора как творца и автора как падшего ангела, бунтаря против закона, установленного Творцом.The article correlates the notions of the author and the antihero. With reference to the literary group of the Cursed Poets, the article studies the aesthetic problem of the coexistence of good and evil within one person, the author as a creator and the author as a fallen angel, rebelling against the law set down by the Creator
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