122,194 research outputs found
Controlling the electrical characteristics of Au/n-Si structure with and without (biphenyl-CoPc) and (OHSubs-ZnPc) interfacial layers at room temperature
No full textIn order to interpret well whether or not the organic or polymer interfacial layer is effective on performance of the conventional Au/n-Si (metal semiconductor [MS]) type Schottky barrier diodes (SBDs), in respect to ideality factor (n), leakage current, rectifying rate (RR), series and shunt resistances (R-s, R-sh) and surface states (N-ss) at room temperature, both Au/biphenyl-CoPc/n-Si (MPS1) and Au/OHSubs-ZnPc/n-Si (MPS2) type SBDs were fabricated. The electrical characteristics of these devices have been investigated and compared by using forward and reverse bias current-voltage (I-V) characteristics in the voltage range of (-4V)-(4V) for with and without (biphenyl-CoPc) and (OHSubs-ZnPc) interfacial layers at room temperature. The main electrical parameters of these diodes such as reverse saturation current (I-0), ideality factor (n), zero-bias barrier height (phi(B0)), RR, R-s and R-sh were found as 1.14x10(-5)A, 5.8, 0.6eV, 362, 44 and 15.9k for reference sample (MS), 7.05x10(-10)A, 3.8, 0.84eV, 2360, 115 and 270k for MPS1 and 2.16x10(-7)A, 4.8, 0.7eV, 3903, 62 and 242k for MPS2, respectively. It is clear that all of these parameters considerably change by using an organic interfacial layer. The energy density distribution profile of N-ss was found for each sample by taking into account the voltage dependence of effective barrier height (phi(e)) and ideality factor, and they were compared. Experimental results confirmed that the use of biphenyl-CoPc and OHSubs-ZnPc interfacial layer has led to an important increase in the performance of the conventional of MS type SBD. Copyright (c) 2015 John Wiley & Sons, Ltd
Dielectric characterization of BSA doped-PANI interlayered metal-semiconductor structures
No full textThe measured capacitance and conductance-voltage (C & G/omega-V) data between 1 and 200 kHz of Al/(BSA-doped-PANI)/p-InP structure were examined to uncover real and imaginary components of complex permittivity (epsilon* = epsilon ' - j epsilon ''), loss tangent (tan delta), complex electric modulus (M* = M ' + jM ''), and electrical conductivity (sigma). It was uncovered that dielectric constant (epsilon '), dielectric loss (epsilon ''), tan delta, real and imaginary components (M ' and M '') show a big dispersive behavior at low frequencies due to the oriental and the interfacial polarizations, as well as the surface states (N-ss) and the BSA doped-PANI interlayer. Such behavior in epsilon ', epsilon '', and tan delta, behavior with frequency was also explained by Maxwell-Wagner relaxation. The values of sigma are almost constant at lower-intermediate frequencies, but they start increase at high frequencies which are corresponding to the dc and ac conductivity, respectively. The values of M ' and M '' are lower in the low frequency zone and they become increase with increasing frequency at accumulation region due to the short-range charge carriers mobility. Ultimately, dielectric parameters and electric modulus alteration with frequency is the consequence of surface states and relaxation phenomena
A Multi-Language Comparison of Influences on Author Verification using Character N-Grams
No full textWe create a new multi-language corpus for author verification based on Wikipedia talkpages, and evaluate the influence that differences in topic and time have on character n-gram author profiles. Topic alignment between two texts is found to increase author verification precision, and an authors writing style is found to change over time, but not more significantly after 3 years than after 1 year.Information ArchitectureWISElectrical Engineering, Mathematics and Computer Scienc
Appropriate Similarity Measures for Author Cocitation Analysis
No full textWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
The vanishing author in computer-generated works: a critical analysis of recent Australian case law
No full textAbstract
The use of software is ubiquitous in the creation of many copyright works, yet the requirement in copyright law that every work have a human author who engages in independent intellectual effort means that its use may prevent copyright subsistence. Several recent Australian cases have refocused attention on authorship as an essential criterion of copyright subsistence, and these cases suggest that much computer-produced output may be authorless and thus lack copyright protection. This article, the first in a two-part series, analyses how each case deals with the question of authorship of computer-produced works and why the use of software diminishes copyright protection for a significant number of computer-generated works. The article critiques the application of conventional notions of human authorship developed in the pre-computer age to modern productions and suggests alternative approaches to authorship that satisfy both the major objectives of copyright policy and the need to adapt to the computer age. The article argues that, without a broader judicial approach to authorship of computer-generated works, Parliament must remedy the lacuna in protection for these ‘authorless’ works. Possible solutions for reform are suggested. In a forthcoming article, the author comprehensively examines those reform proposals
Diffusive author(s), cohesive author: Analysis of S/N (1994)
No full textThis study indicates the ways in which various aspects of the author(s) are brought forth in Dumb type’s performance art, the S/N production. Previous research has suggested a non-hierarchical organization of Dumb type and the absence of a “privileged author” in Dumb type’s collaborative work, S/N. However, the results that I have investigated from member’s interviews on the creative process of S/N along with my analysis of the recorded images of S/N, indicate a different aspect of the author(s). First, S/N was created through, so to speak, the collective ideas of the members of Dumb type. Further, S/N has at least nine quotations from previous performances, installations, and printed writings, besides the work-in-progress technique. Explicating one of the “author functions” as given by Michel Foucault, each text has plural subjects of the author. However, it has been revealed from members’ interviews that Teiji Furuhashi had a decision-making role in selecting the members’ ideas within the performance. Since then, S/N has had plural subjects of creation; however, Furuhashi is one of the subjects of creation along with the “privileged author.” S/N has plural authors (diffusive authors) yet at the same time, it has a “privileged author,” Teiji Furuhashi (cohesive author)
The Preperation Of Au/Pva:Zn/N-Si (Mps) Structures And Investigation Of Main Electrical Characteristics Under Illumination
No full textBu çalışmada, geleneksel Au/n-Si diyotlar, n-Si alttaş üzerine elekrodündürme metoduyla Zn katkılı PVA (PVA:Zn) arayüzey tabakası kaplanarak modifiye edildi. PVA:Zn tabakasının yüzey morfolojisi hakkında bilgi edinmek için, taramalı elektron mikroskobu (SEM) görüntüleri farklı yakınlaştırmalarda incelendi. PVA:Zn arayüzey tabakasına sahip Au/n-Si diyodun doğru ve ters ön-gerilim akım-voltaj (I-V), kapasitans-voltaj (C-V) ve kondüktans-voltaj (G/  -V) karakteristikleri oda sıcaklığında incelendi ve deneysel sonuçlar geleneksel olanla kıyaslandı. Deneysel I-V sonuçları gösterdi ki modifiye edilmiş Au/PVA:Zn/n-Si diyot çok iyi doğrultma davranışına sahiptir. İdealite faötürü (n), seri direnç (Rs), şönt direnci (Rsh) ve bariyer yüksekliği (  B) gibi temel elektriksel parametreler düz ve ters ön gerilim I-V karakteristiklerinden elde edildi. Diyotların Rs değerleri Cheung fonksiyonları, Ohm yasası ve Norde metodları ile hesaplandı. Ayrıca, arayüzey durumlarının enerji dağılımı (Nss) voltaja bağlu efektif bariyer yüksekliği ve Rs göz önüne alınarak doğru beslem I-V ölçümlerinden elde edildi. Nss değerlerinin yasak enerji aralığının ortasından iletim bandının altına doğru eksponansiyel olarak arttığı gözlendi. Buna ilaveten, modifiye edilmiş Au/PVA:Zn/n-Si diyotun admittans, (C-V) ve (G/ω-V) karakteristikleri hem karanlık hemde farklı aydınlatma şiddetlerinde incelendi. Deneysel C-V eğrileri metal/yarıiletken (M/S) arayüzeyinde arayüzey durumlarının veya elektron- hol çiftlerinin aydınlatma ile tetiklenenmesi ile pik verdiği görüldü. Aygıtın katkılama yoğunluğu (ND), tüketim tabakasının kalınlığı (WD) ve bariyer yüksekliği (ΦB(C-V)) gibi ana elektriksel parametreleri C-2-V eğrileri çizilerek belirlendi. Bunun yanında farklı aydınlatma şiddetleri için (C-V) ve (G/ω-V) dataları kullanılarak voltaja bağlı Rs değerleri elde edildi. Tüm bu bulgular Au/PVA:Zn/n-Si diyotun I-V, C-V ve G/  -V karakteristiklerinin aydınlatma ile oldukça etkilendiğini doğruladı. Modifiye edilmiş Au/PVA:Zn/n-Si diyotların 250 W gibi yüksek aydınlatma şiddetlerinde bile bir fotodiyot olarak kullanılabilceği gözlendi.In this study, conventional Au/n-Si diodes were modified with Zn doped poly(vinyl alcohol) (PVA:Zn) interfacial layer which coated by electrospinning technique on n-Si substrate. In order to obtain information about the surface morphology of PVA:Zn layer, scanning electron microscope (SEM) images have been investigated for various magnifications. The current voltage (I-V), capacitance voltage (C-V) and conductance- voltage (G/  -V) measurements of Au/n-Si diodes with PVA:Zn interfacial layer have been carried out at room temperature and experimental results compared with conventional one. The experimental I-V results show that the modified Au/PVA:Zn/n-Si diode has a very good rectifying behavior. The main electrical parameters such as ideality factor (n), series resistance (Rs), shunt resistance (Rsh) and barrier height (  B) were determined from forward and reverse bias I-V characteristics. The Rs value of diodes was calculated from Cheung's functions, Ohm's law and Norde's method. Also, the energy distribution of interface states (Nss) was obtained from forward bias I-V measurements by taking bias dependence of the effective barrier height (  e) and Rs into account. There is an exponential growth of Nss from the midgap towards to bottom of conduction band. In addition, the admittance, (C-V) and (G/ω-V), characteristics of modified Au/PVA:Zn/n-Si diodes were investigated both dark and under various illumination intensities. Experimental results demonstrate that the C-V plots give a peak due to the illumination induced interface states or electron-hole pairs at metal/semiconductor (M/S) interface. The C-2-V plots were also drawn to determine main electrical parameters such as doping concentration (ND), depletion layer width (WD) and barrier height (ΦB(C-V)) of device. Besides, the voltage dependence Rs values were obtained from C-V and G/ω-V data by using Nicollian and Brews method for various illumination intensities. All these observations confirm that I-V, C-V and G/  -V characteristics of Au/PVA:Zn/n-Si were strongly affected by illumination. Modified Au/PVA:Zn/n-Si diodes can be used as a photodiode as much as 250 W illumination levels
THE INVESTIGATION OF FREQUENCY DEPENDENT ELECTRICAL CHARACTERIZATION OF Au/SrTiO3/n-Si (MFS) SCHOTTKY DIODES
No full textBu çalışmada, n tipi silisyum (Si) alttaş üzerine radyo frekans (RF) püskürtme metoduyla hazırlanmış SrTiO3 ince filmlerin elektriksel karakterizasyonu araştırıldı. Au/SrTiO3/n−Si yapıların, frekansa bağlı kapasitans-voltaj (C-V) ve iletkenlik-voltaj (G/-V) karakteristikleri seri direnç (Rs) ve arayüzey durumlarının (Nss) etkisi dikkate alınarak 5 kHz-2MHz aralığında incelendi. Yapının deneysel C-V-f ve G/w-V-f karakteristiklerinin oldukça frekansa bağlı olduğu gözlendi. Frekansa ve voltaja bağlı Rs ve Nss dağılımları sırasıyla admittans ve Hill Coleman metodu kullanılarak elde edildi. Buna ilaveten arayüzey durumlarının dağılım profili (Nss), etkin bariyer yüksekliği (e) göz önüne alınıp enerjinin (Ec-Ess) bir fonksiyonu olarak doğru öngerilim I-V ölçümlerinden elde edildi. Arayüzey durumlarının ortalama değeri 1013 eV-1cm-2 civarında bulundu. C-V eğrilerindeki pikler Nss ve Rs'nin varlığına atfedildi. Rs'nin C-V ve G/-V karakteristiklerine etkisi yüksek frekanslarda daha fazladır çünkü C ve G/ değerleri artan frekansla azalır. Nss'nin varlığı bu tür yapıların C-V ve G/-V eğrilerinin ideal durumdan sapmasına yol açar. Arayüzey durumları özellikle düşük frekanslarda ac sinyalini kolayca takip edebilir ve ömürlerine bağlı olarak kapasitansa katkıda bulunurlar. Aynı zamanda C-V ve G/-V eğrilerinde görülen pik değerlerinin voltaj ekseninde
kaymasına neden olurlar. Ayrıca Au/SrTiO3/n-Si yapının derin seviye tuzakları, Derin Seviye Sönüm Spektroskopisiyle (DLTS) incelendi. 235 meV aktivasyon enerjisine sahip derin bir seviye ölçüldü ve yakalama tesir kesiti () ile tuzak yoğunluğu (Nt) parametreleriyle birlikte detaylı olarak verildi.In this study, we investigated electrical characterization of RF sputtered SrTiO3 thin films deposited on n type Si substrate. Frequency dependent capacitance-voltage (C−V) and conductance-voltage (G/−V) characteristics of the Au/SrTiO3/n−Si structures have been investigated by considering the effect of series resistance (Rs) and interface states (Nss) in the frequency range of 5 kHz − 2 MHz. The experimental C−V−f and G/−V−f characteristics of these structures show fairly large frequency dispersion, especially at low frequencies. The frequency and voltage dependent distribution profile of Rs and Nss were obtained by using admittance spectroscopy and Hill-Coleman methods, respectively. In addition, the energy density of Nss distribution profiles as a function Ec-Ess was extracted from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height (Φe). The average value of interface states was found about 1013 eV-1cm-2. The C−V plots exhibit anomalous peaks due to the Nss and Rs effect. Also, the effect of Rs on the C-V and G/-V characteristics is found appreciable at higher frequencies due to decreasing values of C and G/ with increasing frequency. Because of the presence of Nss, the device behavior is different from the ideal case of C-V and G/-V characteristics. These Nss can easily follow the ac signal especially at low frequencies and yield an excess capacitance, which depends on their relaxation time and cause a bias shift of the C-V and G/-V curves. Also we discussed the
deep trap levels in Au/SrTiO3/n-Si structure using via Deep Level Transient Spectroscopy (DLTS) method. A deep trap level having 235 meV activation energy (Ea) was measured and given with capture cross section () and trap concentration (Nt) parameters were in details
INVESTIGATION OF ELECTRICAL CHARACTERISTICS OF (Al-TiW+PtSi)-n-Si SCHOTTKY DIODES DEPENDING ON FREQUENCY AND ILLUMINATION
No full textBu çalısmada, magnetron sputtering yöntemi ile (Al-TiW+PtSi)/n-Si Schotty
diyotları üretilmis ve bu diyotların akım-voltaj (I-V), kapasitans-voltaj (C-V) ve
iletkenlik voltaj (G/w-V) ölçümleri oda sıcaklıgında, karanlıkta, ısık altında ve
farklı frekanslar için gerçeklestirilmistir. Doyum akımı (I0), sıfır beslem engel
yüksekligi (FBo), idealite faktörü (n) ve seri direnç (Rs) degerleri, sırası ile
karanlıkta 4,2x10-10 A, 0,755 eV, 1,24 ve 896 ; aydınlıkta ise 7,47x10-10A, 0,740
eV, 1,18 ve 419,7 olarak bulunmustur. Ayrıca diyotun kırılma voltajının da
21 V civarında oldugu görülmüstür. Aydınlatma islemi (C-V) ve (G/w-V)
egrilerinde ters beslem yönünde 150 mV civarında ve artan aydınlanma siddeti
ile artan bir kaymaya sebep olmustur. Bu davranısın aydınlanma ile ara yüzey
durum yogunluklarında degismeye neden olan metal yarı iletken arasında
uyarılan sabit yüklerden kaynaklandıgı seklinde açıklanmıstır. Ayrıca seri
direncin (Rs) aydınlanma ile azaldıgı ve kapasitan-voltaj (C-V) ve iletkenlikvoltaj
(G/w-V) özelliklerinde anlamlı degisiklere neden oldugu görülmüstür. I-V
özellikleri ideal davranısa sahip degildir ve idealite faktörü (n), yarı iletken ile dengede olan ara yüzey durum yogunluklarına (Nss) tarafından kontrol edilmektedir.
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In this study, (Al-TiW+PtSi)/n-Si Schottky diodes were fabricated by a
magnetrons sputtering method and their current-voltage (I-V) and admittancevoltage
(C-V, G/w-V) measurements were carried out in dark and under
illumination. The values of saturation current (Io), zero-bias barrier height
(Bo), ideality factor (n) and series resistance (Rs) are found equal to 4,2x10-10A,
0,755 eV, 1,24 and 896 in the dark and to 7,47x10-10A, 0,740 eV, 1,18 and
419,7 W under illumination, respectively. In addition to this, the break down
voltage of the (Al-TiW+PtSi)/n-Si Schottky is found to be near 21 V. The
illumination process causes shift the capacitance-voltage (C-V) and
conductance-voltage (G / -V) curves toward reverse bias about 150 mV and
increases with increasing illumination level. This behavior can be explained by
the built-up of fixed charge between metal and semiconductor attributed to
changes in the number of interface states (Nss) due to the illumination process.
In addition to these, the series resistance (Rs) of diodes can significantly alter
the capacitance-voltage (C-V) and conductance-voltage (G/ -V) characteristics
and decrease with increasing illumination level. I-V characteristics have not ideal behavior and ideality factor (n) is controlled by the Nss in equilibrium with the semiconductor
The preparatinon of al/rhodamine-101/n-gaas schottky barrier diodes and the investigation of their cundiction mechanisms in the wide temperature range
No full textAl/Rhodamine-101/n-GaAs Schottky engel diyotlarının (SBDs) elektriksel karakteristikleri, akım-voltaj (I-V), kapasitans-voltaj (C-V) ve kondüktansvoltaj (G/w-V) ölçüm metotları kullanılarak geniş bir sıcaklık aralığında incelendi. Artan sıcaklık ile idealite faktöründe (n) bir azalma ve sıfır-beslem engel yüksekliğinde (ΦBo) ise bir artma olduğu gözlendi. ΦBo ve n değerlerinin bu şekildeki davranışı, metal/yarıiletken (M/Y) ara yüzeyinde oluşan engel homojensizliğine atfedilebilir ve bu durum Gaussian dağılımı (GD) ile açıklanabilir. Diyot idealite faktörünün sıcaklığa çok bağlı olması, M/Y arayüzeyindeki organik tabakada oluşan akım sürecinin, orta ve yüksek gerilim bölgelerindeki akım iletiminin uzay-yük sınırlaması mekanizmasının etkin olabileceğini göstermektedir. Böylece, metal/n-GaAs Schottky diyotlarda kullanılan Rh101 ara-yüzey tabakası, M/Y arasında oluşan ΦBo değerini oldukça değiştirir. Sonuç olarak, geleneksel Al/n-GaAs Schottky diyotlar için 290 K de elde edilen ΦBo değeri, bu çalışmadaki Al/Rh101/n-GaAs için elde edilen 0,68 eV değerlerinden önemli ölçüde yüksek olduğu belirlendi. C ve G/w değerlerinin de sıcaklığa bağlı olduğu gözlendi. Kapasitans verilerinde, tüm
sıcaklıklar için doğru ön-gerilim bölgesinde negatif kapasitans olayı gözlendi. Kapasitans verilerindeki bu davranış, M/S ara-yüzeyinde lokalize olmuş ara yüzey durumlarının kaybıyla veya elektrotlar arasında yüklerin azalmasıyla açıklanabilir. Buna ilaveten, gerçek C-V eğrisini elde etmek için 290 K'deki C-V eğrisi, seri direnç (Rs) değeri dikkate alınarak düzeltildi.The electrical characteristics of Al/Rhodamine-101/n-GaAs Schottky barrier diodes (SBDs) have been investigated by using the current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurement methods in the wide temperature range. It has been seen a decrease in ideality factor (n) and an increase in the zero-bias barrier height (ΦBo) with an increase in temperature. It has been seen that such a behavior of the barrier height (BH) and n obey Gaussian distribution of the BHs due to the BH inhomogeneities at the metal/semiconductor (M/S) interface. The very strong temperature dependence of ideality factor of the structure has shown that the current processes occurring in the organic layer at the MS interface would be a possible candidate such as space-charge limited conduction in determining the current at the intermediate and high bias regimes. Furthermore, it has been shown that the Rh101 can be used to vary effective BHs for the metal/GaAs Schottky diodes. As a result, it has been determined that the BH value for conventional
Al/n-GaAs SBD is remarkably higher than our own values of 0,68 eV obtained for the Al/Rh101/n-GaAs at 290 K. The values of C and G/w were also found to be a strongly function of temperature. The negative capacitance phenomenon has been observed in the C-V plot for each temperature. Such behavior of C can be explained by considering the loss of interface charges localized at M/S interface and the decrease of charges between two electrodes. In addition, the CV plot at 290 K were corrected by considering the series resistance (Rs) effect to
obtain the real diode capacitance
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