21,733 research outputs found
Self-aligned silicidation of surround gate vertical MOSFETs for low cost RF applications
No full textWe report for the first time a CMOS-compatible silicidation technology for surround-gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for silicidation and is successfully integrated with a Fillet Local OXidation (FILOX) process, which thereby delivers low overlap capacitance and high drive-current vertical devices. Silicided 80-nm vertical n-channel devices fabricated using 0.5-?m lithography are compared with nonsilicided devices. A source–drain (S/D) activation anneal of 30 s at 1100 ?C is shown to deliver a channel length of 80 nm, and the silicidation gives a 60% improvement in drive current in comparison with nonsilicided devices. The silicided devices exhibit a subthreshold slope (S) of 87 mV/dec and a drain-induced barrier lowering (DIBL) of 80 mV/V, compared with 86 mV/dec and 60 mV/V for nonsilicided devices. S-parameter measurements on the 80-nm vertical nMOS devices give an fT of 20 GHz, which is approximately two times higher than expected for comparable lateral MOSFETs fabricated using the same 0.5-?m lithography. Issues associated with silicidation down the pillar sidewall are investigated by reducing the activation anneal time to bring the silicided region closer to the p-n junction at the top of the pillar. In this situation, nonlinear transistor turn-on is observed in drain-on-top operation and dramatically degraded drive current in source-on-top operation. This behavior is interpreted using mixed-mode simulations, which show that a Schottky contact is formed around the perimeter of the pillar when the silicided contact penetrates too close to the top S/D junction down the side of the pillar
Cuentos /
No full textResurrección, por J. M. Rivas Groot.--Julieta, por J. M. Rivas Groot.--Sueño de amor, por Evaristo Rivas Groot.--El cura de Lenguazaque, por Evaristo Rivas Groot.--Chimborrio, por Evaristo Rivas Groot
Depletion-Isolation Effect in Vertical MOSFETs During the Transition From Partial to Fully Depleted Operation
No full textA simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm. For pillar thicknesses between 200–60 nm, the output characteristics with and without impact ionization are identical at a low drain bias and then diverge at a high drain bias. The critical drain bias Vdc for which the increased drain–current is observed is found to decrease with a reduction in pillar thickness. This is explained by the onset of FBEs at progressively lower values of the drain bias due to the merging of the drain depletion regions at the bottom of the pillar (depletion isolation). For pillar thicknesses between 60–10 nm, the output characteristics show the opposite behavior, namely, the critical drain bias increases with a reduction in pillar thickness. This is explained by a reduction in the severity of the FBEs due to the drain debiasing effect caused by the elevated body potential. Both depletion isolation and gate–gate coupling contribute to the drain–current for pillar thicknesses between 100–40 nm
The AM Canum Venaticorum binary SDSS J173047.59+554518.5
No full textThe AM Canum Venaticorum (AM CVn) binaries are a rare group of hydrogen-deficient, ultrashort period, mass-transferring white dwarf binaries and are possible progenitors of Type Ia supernovae. We present time-resolved spectroscopy of the recently discovered AM CVn binary SDSS J173047.59+554518.5. The average spectrum shows strong double-peaked helium emission lines, as well as a variety of metal lines, including neon; this is the second detection of neon in an AM CVn binary, after the much brighter system GP Com. We detect no calcium in the accretion disc, a puzzling feature that has been noted in many of the longer period AM CVn binaries. We measure an orbital period, from the radial velocities of the emission lines, of 35.2 ± 0.2 min, confirming the ultracompact binary nature of the system. The emission lines seen in SDSS J1730 are very narrow, although double-peaked, implying a low-inclination, face-on accretion disc; using the measured velocities of the line peaks, we estimate i ≤ 11°. This low inclination makes SDSS J1730 an excellent system for the identification of emission lines
Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance
No full textVertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations. This paper investigates the effect of the asymmetric source and drain geometries of surround-gate vertical MOSFETs on the drain leakage currents in the OFF-state region of operation. Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for transistors connected in the drain-on-top and drain-on-bottom configurations. Asymmetric leakage currents are seen when the source and drain terminals are interchanged, with the GIDL being higher in the drain-on-bottom configuration and the body leakage being higher in the drain-on-top configuration. Band-to-band tunneling is identified as the dominant leakage mechanism for both the GIDL and body leakage from electrical measurements at temperatures ranging from ?50 to 200?C. The asymmetric body leakage is explained by a difference in body doping concentration at the top and bottom drain–body junctions due to the use of a p-well ion implantation. The asymmetric GIDL is explained by the difference in gate oxide thickness on the vertical (110) pillar sidewalls and the horizontal (100) wafer surface
Improved drive current in RF vertical MOSFETS using hydrogen anneal
No full textThis letter reports a study on the effect of a hydrogen anneal after silicon pillar etch of surround-gate vertical MOSFETs intended for RF applications. A hydrogen anneal at 800 ?C is shown to give a 30% improvement in the drive current of 120-nm n-channel transistors compared with transistors without the hydrogen anneal. The value of drive current achieved is 250 ?A/?m, which is a record for thick pillar vertical MOSFETs. This improved performance is obtained even though a sacrificial oxidation was performed prior to the hydrogen anneal to smooth the pillar sidewall. The values of subthreshold slope and DIBL are 79 mV/decade and 45 mV/V, respectively, which are significantly better than most values reported in the literature for comparable devices. The H2 anneal is also shown to decrease the OFF-state leakage current by a factor of three
Dierlijk bot uit Tiel-Passewaaij
No full textDeze dataset bevat de resultaten van de analyse van het dierlijk bot uit drie opgravingen in Tiel-Passewaaij: twee nederzettingen en een crematiegrafveld uit de Romeinse tijd. Het dierlijk bot is grotendeels uitgewerkt binnen aanstellingen bij BATO en ACVU-HBS. De opgravingen in Tiel-Passewaaij hebben een grote hoeveelheid dierlijk bot met een uitstekende conservering opgeleverd. Naast gefragmenteerd materiaal is ook een aantal speciale deposities vertegenwoordigd. Het totaal aantal fragmenten dat is onderzocht is 32.619 voor de 3 vindplaatsen samen; hiervan zijn 10.667 fragmenten op soort gedetermineerd.
De resultaten van het zoöarcheologisch onderzoek zijn geanalyseerd tijdens een promotieonderzoek binnen een door NWO gefinancierd project (Rural communities in the civitas Batavorum and their integration into the Roman Empire), dat aan de Vrije Universiteit Amsterdam is uitgevoerd. Het hieruit resulterende proefschrift is: Groot, M., 2008: Animals in ritual and economy in a Roman frontier community. Excavations in Tiel-Passewaaij, Amsterdam: Amsterdam University Press (Amsterdam Archaeological Studies 12).
Een tweede deelproject binnen dit onderzoeksproject was gericht op de vindplaatsen in Tiel-Passewaaij, met uitzondering van het dierlijk bot. Dit project is uitgevoerd door Stijn Heeren. Alle niet-zoöarcheologische data van de opgravingen in Tiel-Passewaaij zijn door hem gedeponeerd bij Dans Easy
The IPHAS catalogue of H alpha emission-line sources in the northern Galactic plane
No full textWe present a catalogue of point-source H alpha emission-line objects selected from the INT/WFC Photometric Ha Survey (IPHAS) of the northern Galactic plane. The catalogue covers the magnitude range 13 <= r' <= 19.5 and includes Northern hemisphere sources in the Galactic latitude range -5 degrees < b < 5 degrees. It is derived from similar to 1500 deg(2) worth of imaging data, which represents 80 per cent of the final IPHAS survey area. The electronic version of the catalogue will be updated once the full survey data become available. In total, the present catalogue contains 4853 point sources that exhibit strong photometric evidence for Ha emission. We have so far analysed spectra for similar to 300 of these sources, confirming more than 95 per cent of them as genuine emission-line stars. A wide range of stellar populations are represented in the catalogue, including early-type emission-line stars, active late-type stars, interacting binaries, young stellar objects and compact nebulae.
The spatial distribution of catalogue objects shows overdensities near sites of recent or current star formation, as well as possible evidence for the warp of the Galactic plane. Photometrically, the incidence of Ha emission is bimodally distributed in (r' - i'). The blue peak is made up mostly of early-type emission-line stars, whereas the red peak may signal an increasing contribution from other objects, such as young/active low-mass stars. We have cross-matched our H alpha-excess catalogue against the emission-line star catalogue of Kohoutek & Wehmeyer, as well as against sources in SIMBAD. We find that fewer than 10 per cent of our sources can be matched to known objects of any type. Thus IPHAS is uncovering an order of magnitude more faint (r' > 13) emission-line objects than were previously known in the Milky Way
Thermionic field emission at electrodeposited Ni–Si Schottky barriers
No full textCurrent transport at Schottky barriers is of particular interest for spin injection and detection in semiconductors. Here, electrodeposited Ni–Si contacts are fabricated and the transport mechanisms through the formed Schottky barrier are studied. Highly doped Si is used to enable tunneling currents. I–V, C–V and low-temperature I–V measurements are performed and the results are interpreted using tunneling theory for Schottky barriers and recent models for spatially distributed barrier heights. It is shown that, contrary to the case of lowly doped Si where thermionic emission dominates, tunneling is the dominant mechanism for reverse and low forward bias for highly doped Si. An exponential reverse bias I–V behavior with negative temperature coefficient is reported. An explanation can be found on the rapid decrease of the reverse bias I–V slope with temperature predicted by Padovani and Stratton for thermionic field emission in conjunction with the increase of the Schottky barrier height with temperature suggested for spatially distributed barrier heights
Using ecological and field survey data to establish a national list of the wild bee pollinators of crops
No full textMM was funded by grant INIA-RTA2013-00139-C03-01 (MINECO and FEDER)Hutchinson, L.A., Oliver, T.H., Breeze, T.D., Bailes, E.J., Brünjes, L., Campbell, A.J., Erhardt, A., de Groot, G.A., Földesi, R., García, D., Goulson, D., Hainaut, H., Hambäck, P.A., Holzschuh, A., Jauker, F., Klatt, B.K., Klein, A.-M., Kleijn, D., Kovács-Hostyánszki, A., Krimmer, E., McKerchar, M., Miñarro, M., Phillips, B.B., Potts, S.G., Pufal, G., Radzevičiūtė, R., Roberts, S.P.M., Samnegård, U., Schulze, J., Shaw, R.F., Tscharntke, T., Vereecken, N.J., Westbury, D.B., Westphal, C., Wietzke, A., Woodcock, B.A., Garratt, M.P.D
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