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Dataset supporting the paper: Sensing of damage and repair of cement mortar using electromechanical impedance
No full textThis dataset relates to two experiments conducted on identical mortar beams. It contains two main ZIP files, which contain respectively the data from the damage experiment and the repair experiment.
The damage experiment ZIP file contains 5 .xlsx files, each one of which includes the electrical impedance signature data for a particular damage stage.
The repair experiment ZIP file contains 4 .xlsx files. These contain, respectively,
(1) the electrical impedance signature for the repair experiment damage stage;
(2) the electrical impedance signature for the after damage stage;
(3) the electrical impedance signature during the repairing process;
(4) the temperature response of the mortar sample after the damage stage, and during the repair stage.Two identical mortar beams of 100 × 100 × 500 mm were used throughout the experimental program. One beam was used in the damage experiment, and the other on the repair experiment.
The binder used was CEM I 52.5N and the sand was siliceous CEN Standard sand, with grains size distribution ranges between 0.08 and 2.00 mm conforming to BS EN 196-1. Mortars were casted with a sand/cement ratio of 3.0, and a water/cement ratio of 0.65. At 24 hours after casting, the samples were demoulded, and cured in a curing room of 21°C and 50% RH. The samples remained in the curing room for a minimum of 90 days before testing to ensure sufficient hydration.
Lead zirconate titanate , PZT, disk was used to acquire the impedance signiture. The setup was composed of a soft PZT patch. A Cyanoacrylate CN-Y adhesive type was used to attach the PZT patch an aluminum plate as well as the aluminum plate to the beam.
The PZT patch was connected through 50 Ω coaxial cables to a Newtons4th PSM 3750 frequency analyzer interfaced with an impedance analyzer . The frequency analyzer was controlled by a PC which was connected through a USB cable. The voltage amplitude used to collect the admittance response was 1 V, and the frequency range used was 15 kHz to 350 kHz. Through this frequency range, 1000 points were collected at 335 Hz intervals.
In the damage experiment, the mortar beam was subjected to five different damage stages. In each damage stage 22 holes were drilled by an electric drill on the surface of the beam. The drilling started with hole number 1 at a distance of 220 mm away from the center of the beam, and along the center line of the beam. Additional holes were subsequently drilled in a line approaching and passing the center of the beam at 20 mm intervals which ended with hole number 22 .Hole diameters of 4 mm, 5 mm, 6 mm, 8 mm and 10 mm were used. The impedance signiture for the beam was collected before and after each hole was drilled.
In the Repair stage experiment, damage was simulated by drilling 16 holes of 10 mm diameter and 5 mm depth at 15 mm spacing along the center line of the beam. The repair was simulated by filling the drilled holes with a cement paste (CEM 1 52.5N, water/cement ratio of 0.35). Theimpedance signature was obtained before and after drilling each hole. After filling the holes with the cement paste, the impedance signature was collected for a period of 60 hours to assess the repair effect on the EMI response. In order to minimize the effect of the ambient temperature and relative humidity, the admittance signatures for the sample were collected before and during the repair process, while the sample was in an environmental chamber of 21.8°C and 68% RH. These two values were specifically selected as they represent the average laboratory temperature and relative humidity during the drilling.
The temperature variations during the repair process was recorded by a K type thermocouple which was attached to the center of the sample adjacent to the PZT patch. The thermocouple wires were connected to a PC controlled TC-08 data logger.The row collected impedance signature, was then converted to an electrical admittance signature in order to allow for further comparison with other previous published studies
Data sets for the Journal of Non-Crystalline Solids X: Article entitled "Pressure induced structural transformations in amorphous MgSiO_3 and CaSiO_3"
No full textData sets used to prepare Figures 1-14 in the Journal of Non-Crystalline Solids X article entitled "Pressure induced structural transformations in amorphous MgSiO_3 and CaSiO_3." The files are labelled according to the figure numbers. The data sets were created using the methodology described in the manuscript. Each of the plots was drawn using QtGrace (https://sourceforge.net/projects/qtgrace/). The data set corresponding to a plotted curve within an QtGrace file can be identified by clicking on that curve. The units for each axis are identified on the plots.
Figure 1 shows the pressure-volume EOS at room temperature for amorphous and crystalline (a) MgSiO_3 and (b) CaSiO_3.
Figure 2 shows the pressure dependence of the neutron total structure factor S_{N}(k) for amorphous (a) MgSiO_3 and (b) CaSiO_3.
Figure 3 shows the pressure dependence of the neutron total pair-distribution function G_{N}(r) for amorphous (a) MgSiO_3 and (b) CaSiO_3.
Figure 4 shows the pressure dependence of several D′_{N}(r) functions for amorphous MgSiO_3 measured using the D4c diffractometer.
Figure 5 shows the pressure dependence of the Si-O coordination number in amorphous (a) MgSiO_3 and (b) CaSiO_3, the Si-O bond length in amorphous (c) MgSiO_3 and (d) CaSiO_3, and (e) the fraction of n-fold (n = 4, 5, or 6) coordinated Si atoms in these materials.
Figure 6 shows the pressure dependence of the M-O (a) coordination number and (b) bond length for amorphous MgSiO_3 and CaSiO_3.
Figure 7 shows the S_{N}(k) or S_{X}(k) functions for (a) MgSiO_3 and (b) CaSiO_3 after recovery from a pressure of 8.2 or 17.5 GPa.
Figure 8 shows the G_{N}(r) or G_{X}(r) functions for (a) MgSiO_3 and (b) CaSiO_3 after recovery from a pressure of 8.2 or 17.5 GPa.
Figure 9 shows the pressure dependence of the Q^n speciation for fourfold coordinated Si atoms in amorphous (a) MgSiO_3 and (b) CaSiO_3.
Figure 10 shows the pressure dependence in amorphous MgSiO_3 and CaSiO_3 of (a) the overall M-O coordination number and its contributions from M-BO and M-NBO connections, (b) the fractions of M-BO and M-NBO bonds, and (c) the associated M-BO and M-NBO bond distances.
Figure 11 shows the pressure dependence of the fraction of n-fold (n = 4, 5, 6, 7, 8, or 9) coordinated M atoms in amorphous (a) MgSiO_3 and (b) CaSiO_3.
Figure 12 shows the pressure dependence of the O-Si-O, Si-O-Si, Si-O-M, O-M-O and M-O-M bond angle distributions (M = Mg or Ca) for amorphous MgSiO_3 (left hand column) and CaSiO_3 (right hand column).
Figure 13 shows the pressure dependence of the q-parameter distributions for n-fold (n = 4, 5, or 6) coordinated Si atoms in amorphous (a) MgSiO_3 and (b) CaSiO_3.
Figure 14 shows the pressure dependence of the q-parameter distributions for the M atoms in amorphous MgSiO_3 (left hand column) and CaSiO_3 (right hand column).The data sets were collected using the methods described in the published paper.The data sets were analysed using the methods described in the published paper.Figures 1 - 14 were prepared using QtGrace (https://sourceforge.net/projects/qtgrace/). The data set corresponding to a plotted curve within an QtGrace file can be identified by clicking on that curve
Dataset for "Displacement Talbot Lithography for nano-engineering of III-nitride materials"
Get PDFThis dataset contains scanning electron microscopy (SEM) images of various nano-patterns. The nano-patterns are first created in the resist via Displacement Talbot Lithography. The nano-patterns in the resist are then used to create dielectric or metal mask, respectively via Inductively coupled plasma dry etching or lift-off. Finally, the masks are employed either for the bottom-up selective area growth (via metal organic vapour phase epitaxy) or for the top-down fabrication of nanostructures. A combination of top-down etching and bottom-up can also be employed.Secondary electron images were captured using a Hitachi S-4300 scanning electron microscope (SEM). An accelerating voltage of 5 kV was used to collect the imagesAll DTL patternings have been performed on 2-inch wafers (Figure 1.a). A stack of two layers was spin-coated at 3000 rpm to obtain a ~ 270 nm bottom antireflective coating (BARC) (Wide 30W – Brewer Science) layer thickness, followed by either a layer of high-contrast positive resist (Dow® Ultra-i 123 diluted with Dow® EC11 solvent) or a layer of negative resist (AZ® 15 NXT diluted with AZ® Edge Bead Remover (EBR) solvent with a 7:12 ratio by weight). The baking temperature is a critical parameter for the BARC processing as it determines the rate at which the BARC develops. A bake at 150°C enables a wet-developable process and thus to create an undercut profile (Fig. 1e and 3e). A bake at 200°C fully cures the BARC, making it insoluble in a developer (Fig. 1b). DTL (PhableR 100, Eulitha) was then used to expose the resist with a coherent 375 nm light source with an energy density of 1 mW.cm-2 (Fig. 1a). Various masks have been employed: two hexagonal amplitude masks, one with a 1.5 μm pitch with 800 nm diameter circular opening, and another with a 1 μm pitch with 550 nm opening, and two phase mask, one with a 500 nm pitch with 300 nm diameter circular opening, and another with lines spaced by 800 nm with a 62% filling factor. The Talbot length associated with those masks is 8.81 μm, 3.80 μm, 750 nm and 3.21 μm, respectively. Details of the calculation can be found in other publications. The gap between the mask and the wafer was set to 150 μm. A Gaussian velocity integration was applied and 8 Talbot lengths travel distance has been chosen to assure a homogenous integration on several Talbot motifs. After a certain exposure time (which defines the exposure dose), the sample was baked for 1 min 30 sec at 120°C on a hot plate. The wafer with a positive resist was developed in MF-CD-26 for 90 to 240 sec (depending on the mask fabrication), the one with a negative resist in AZ 726 for 30 sec. Finally, the wafer was rinsed with deionized water and dried with nitrogen.
Materials such as hydrogen silsesquioxane (HSQ) and silicon nitride (SiNx) were used as a dielectric mask. Prior to DTL patterning, HSQ was spin-coated on 2-inch wafers at 3000 rpm and baked from 150°C to 450°C in 100°C increments or SiNx was deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD). The pattern created in the resist by DTL/D2TL (Fig. 1b and Fig. 2a-l) were transferred into the dielectric material (Fig. 1c and Fig. 3a-d) via an inductively coupled plasma (ICP) dry etch system (Oxford Instruments System 100 Cobra). The experiments were performed with a CHF3 chemistry of 25 sccm, a temperature set to 20 °C, a pressure of 8 mTorr, 50 RF power and 300 W ICP source power, resulting in a etch rate of ~50 nm/min. The etching time was adjusted as a function of the thickness of the dielectric mask. The resulting transferred pattern was then cleaned in a piranha solution (3:1) and oxygen plasma (Fig. 1d).
The undercut profile created in the BARC (cured at 150°C) after exposure and development (Fig. 1e and Fig. 2e) was employed as a lift-off layer. 200 nm Ni layers were deposited via e-beam evaporation to produce metal masks in the circular opening at the surface of the wafer (Fig. 1f and Fig. 2f). Subsequent lift-off was achieved by soaking the wafer in MF-CD-26 developer. Finally, wafers were cleaned in a 2 min reactive-ion etching (RIE) oxygen plasma to remove any BARC residue (Fig. 1g and Fig. 2g-i).
The selective area growth of InGaN/GaN core-shell nanorods has been carried out in a showerhead MOCVD reactor. The GaN core has been grown under continuous flow mode with the following conditions: A carrier gas mixture of N2 and H2 with H2/N2=2, a temperature of 1200°C, a total reactor pressure of 100 mbar, and the TMGa and NH3 flow rates fixed at 80 sccm. Other details about the growth conditions and optimization can be found in previous plublications. On the GaN nanorods, five periods of InGaN/GaN QWs have been deposited using standard QW growth conditions, TMIn, TEGa and NH3 have been used as precursors, pressure has been fixed at 400mbar and the growth temperature set between 850°C and 980°C for QWs and GaN Barriers, respectively.
An ICP dry etch system was used to create nanostructures in various materials including GaN, AlN, III-Nitride LEDs structures and sapphire substrates. In the case of III-nitrides, the experiments were performed with a Cl2/Ar chemistry of 50/10 sccm, a temperature of 150°C, a pressure set between 9 to 15 mTorr, a RF power set between 80 and 120 W and 800 W ICP source power. More details can be found in previous publications. For sapphire substrate, the experiments were performed with a Cl2/BCl3/Ar chemistry of 5/50/5 sccm, a temperature of 5°C, a pressure of 8 mTorr, 100 W RF power and 600 W ICP source power. Finally, the masks were etched away in aqua-regia solution (HCl:HNO3, 3:1) for metal masks, and in BOE 5:1 for dielectric masks.
The samples used for the selective area sublimation were grown on 2-inch c-plane (0001) sapphire substrates by MOCVD in a 7x2-inch close-coupled showerhead Aixtron reactor. A 2 µm non-intentionally doped GaN was first grown followed by a 2 µm Si- doped (5x1018 cm-3) GaN layer. The first 2 µm of GaN are undoped in order to favour the coalescence of the layer after an initial 3D growth mode to reduce the threading dislocation density. Displacement Talbot lithography is used to pattern a SiNx or a SiOx dielectric mask with respectively holes (Fig. 3b) or dots (Fig. 3d). The samples are annealed under vacuum in a MBE chamber during 3h at 910°C and 10h at 940°C for the samples with the hole pattern and the dot pattern, respectively. More details can be found in previous publications.
The III-nitride bottom-up regrowth was carried out in a 1 x 2” horizontal Aixtron MOVPE reactor. The growth conditions for AlN faceting on nanorod were the following: a temperature of 1100°C, a pressure of 20 mbar, 10 sccm in TMAl flow rate, 4000 sccm in NH3 flow rate, and H2 as the carrier gas. GaN regrowth was performed at a temperature of 920°C (Fig. 7b) or 820 °C (Fig. 7c), a pressure of 100 mbar, 8 sccm in TMGa flow rate, 2800 sccm in NH3 flow rate, and H2 as the carrier gas. More details can be found in previous publications.
AlN overgrowth on nanopillar-nPSS was done in an AIX2400G3HT MOVPE planetary reactor with a capability of 11 x 2-inch wafers with standard TMAl and NH3 precursors. Pressure was fixed at 50 mbar and H2 served as carrier gas. A 50 nm thick nucleation layer was deposited at 980 °C with a V/III ratio of 4000. After nucleation, the temperature was increased to 1380 °C with a V/III ratio of 30, followed by a decrease to 1180 °C with the same V/III ratio
Dataset and figures for "Enhancing the Photo-corrosion Resistance of ZnO Nanowire Photocatalysts"
No full textZinc oxide (ZnO) displays superior properties as a photocatalyst for water treatment compared to widely used TiO2. More widespread application of ZnO, though, is hampered by its low stability and high photo-corrosion in aqueous environments, with the latter further enhanced under UV irradiation. The paper associated with this dataset, "Enhancing the Photo-corrosion Resistance of ZnO Nanowire Photocatalysts", shows for the first time that oxygen plasma post-treatment significantly enhances the photo-corrosion resistance of ZnO nanowire films in water under UV irradiation, while also leading to a 46% and 13% higher degradation of a model pollutant, phenol, compared to the as-produced and thermally annealed films, respectively, for the same irradiation time. This dataset contains the photodegradation and phenol calibration data underpinning these results, alongside measurements of Zn concentration in the solution after photocatalysis, X-ray diffraction data, hydrodynamics calculations, and Transmission and Scanning Electron Microscopy (TEM/SEM) images.All data collection methods and analytical steps are fully described in the associated manuscript.All instrumentation details are fully described in the associated manuscript.The spreadsheet contains the following tabs:
- X-ray diffraction data for Figure 2 in the paper;*
- data for photocatalytic degradation of ZnO_F and ZnO_W in Figures 4 and 6 in the paper, respectively;*
- reactor calculations;
- calibration data for phenol;*
- attenuation factor calculations;
- data and calculations for hydrodynamic values contained in paper;*
- photodegradation data for Figure 7 in the paper;*
- Zn concentration calculations.
Data marked with an asterisk can also be found in CSV format in the accompanying zip file
Cob cylinder's data
No full textSix cob cylinders were manufactured at the facilities of the Department of Civil, Structural and Environmental Engineering, Trinity College Dublin. Three cylinders were tested in compression under force control at a rate of 100 N/s and the other three under displacement control at a rate of 15 mm/min during 3 min. The raw data file contains all the data points collected for load (N), test time (s) and displacement (mm) for each cylinder
Cob wallettes' consolidation data
No full textSix cob wallettes were manufactured at the facilities of the Department of Civil, Structural and Environmental Engineering, Trinity College Dublin. Four LVDTs where attached to the middle third of the wallettes (two in each one of its faces) to measure the deformation caused by the load transfer to it by the tensioning of 4 steel threaded bars. The load applied to the wallettes was measured with load cells installed under every bar. The raw data is divided in three files. The first one contains all the data points collected during the first cycle loading for load (kN), and displacement (mm) for each wallette. The second file contains the same data collected during a second loading cycle (except for wallette W1). Finally, the third one contains data points collected during the consolidation period of five days for load (kN), displacement (mm) and time (min)
Dataset for 'Simultaneous Formation of FeOx Electrocatalyst Coating within Hematite Photoanodes for Solar Water Splitting'
Get PDFDepositing an oxygen evolution electrocatalyst on the intricate pores of semiconductor light-absorbing layers of photoanodes for photoelectrochemical solar water splitting is an efficient way to improve their performance, but it adds extra costs and difficulties. Here details of collection methods and the analysis instrumentation are given. Also the raw data of hematite sample analysis and the data for photocurrent measurements and oxygen evolution data are provided.The techniques used were as follows:
Electron Microscopy – SEM and TEM;
X-ray diffraction – powder samples;
Photoelectrochemistry – potentiostat and electrochemical cell linked to a calibrated solar simulator light source;
X-ray photoelectron spectroscopy for surface analysis of element and oxidation states;
UV-visible spectroscopy – analysis of organic compounds and bonding;
Raman analysis – analysis of organic compounds and bonding;
O2 evolution analysis – fluorescent probe.
Powder samples were hand ground before mounting on sample holders for powder X-ray analysis, Raman and UV-visible spectroscopy. For TEM, samples were hand ground then briefly sonicated in propanol before a drop of the suspension was applied to formvar and carbon coated copper mesh grids.
For all details see attached Data Collection Methods document and links to related publications.Hematite amples for SEM were prepared on electrically conductive ABS-FTO glass, gold sputter coating was therefore not required for SEM observation.
Hematite samples for TEM were prepared by briefly sonicating a small amount of sample in propanol before one drop of the dilute suspension was places on carbon coated copper TEM grids.
Hematite samples for XRD were prepared by hand grinding before placing in a powder sample holder disk and levelled
Dataset for "Non-locking screw insertion: no benefit seen if tightness exceeds 80% of the maximum torque"
Get PDFScrews are the most commonly used orthopaedic implant, however they are frequently overtightened when inserted. Using screw, bone and screw hole characteristics, maximum torque for a screw hole is predicted prior to insertion. Using this, optimum tightness as a percentage of the maximum torque is investigated as functions of compression and pullout forces. This data set provides the raw data for these investigations. The methodology is described in detail in the related manuscript: Fletcher, J., Ehrhardt, B., MacLeod, A., Whitehouse, M., Gill, H. & Preatoni, E. 2019. Non-locking screw insertion: No benefit seen if tightness exceeds 80% of the maximum torque. Clinical Biomechanics. https://doi.org/10.1016/j.clinbiomech.2019.07.009Biomechanical testing using juvenile bovine bone'R' software, v3.3.3 (R: A language and environment for statistical computing. R Foundation for Statistical Computing)
Dataset for "Impact of the Crossrail tunnelling project on masonry buildings with shallow foundations"
No full textData supporting figures in the publication "Impact of the Crossrail tunnelling project on masonry buildings with shallow foundations". This dataset contains critical strain and modification factor values. The results have been obtained by applying the Limiting Tensile Strain Method (LTSM) and the Relative Stiffness Method (RSM).The data have been obtained by using the Limiting Tensile Strain and Relative Stiffness Methods. For full details of the methodology used, please refer to the ‘Building damage assessment’ section of the associated paper.The data is presented as .fig files in MATLAB Level 5 MAT-file format
Syrian refugees in Kilis (Southern Turkey): locations, distances and populations
No full textThe data set includes the GIS coordination and population information of 18 potential service points (2 hospitals, 1 Red Crescent office, and 15 schools) together with 187 (109 villages and 78 neighbourhoods) main locations where Syrian refugees inhabit in the Kilis province in southern Turkey. Locations are classified as Villages (Köy) and Neighbourhoods (Mahalle) based on administrative divisions of Turkey. The population of each identified demand location, which is obtained from the local government in 2018, is provided as well.
The dataset has been used for a study on how to design a network of administrative facilities to support the roll-out of cash-based interventions, using refugee locations from the dataset to identify appropriate locations for these administrative facilities using the model presented in the paper. For decades the humanitarian sector has mainly relied on providing material assistance to beneficiaries during disaster relief. These days there is a growing importance in the provision of services, not only by means of replacing the distribution of relief items by cash & vouchers that can be exchanged for goods as needed but also in the provision of supporting services such as health or education. These services can help stimulate local market activity and restart livelihoods.
In this project we aim to design and implement the supply chain for two key services to beneficiaries: cash & voucher distribution (as a replacement for distributing core relief items).
The dataset has been used for a study on how to design a network of administrative facilities to support the roll-out of cash-based interventions, using refugee locations from the dataset to identify appropriate locations for these administrative facilities using the model presented in the paper.This dataset identifies communities by type, district, longitude, lattitude and population size (where applicable). The nodes are numbered. In a second tab, distances between nodes are calculated using geospatial software
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