Engineering Conferences International
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Next-generation plastic degrading enzymes
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The use of in silico analysis to engineer the best immunogenic epitope and produce the corresponding prophylactic antigen-based vaccines with C1 production platform in order to rapidly respond to viral pandemics
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Enzyme engineering for synthetic biology
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Molecular mechanisms of nucleases: A single-molecule perspective
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Machine-learning based prediction of glycosyltransferase substrates
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Computational redesign of functional enzymes
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Electrical performance of amorphous IGZO thin-film transistor on cellulose nanopaper substrate
Get PDFPlastics are commonly used as substrates for flexible electronics today, but they cause significant impact to the environment. Paper has been considered as an alternative owing to their low cost, flexibility, biodegradability and recyclability. However, paper substrates are vulnerable to high temperature and/or wet processes. Therefore, most reported on-paper electronics were fabricated by using printing processes, transfer processes, and/or shadow-masking deposition techniques. In this work, amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) were demonstrated on cellulose nanopaper substrates via a photolithography-compatible direct-fabrication method. The paper substrate was formed by drop-casting suspension containing cellulose nanofibers and cellulose nanocrystals on a rigid carrier substrate. A buffer layer consisting of parylene, SiNx, SiO2 and Al2O3 was then deposited to protect the paper substrate against processing gases and chemicals. To avoid deterioration of the cellulose nanopaper substrate, a low-temperature process of £ 150°C was developed. Fig. 1(a) shows the micrograph of a-IGZO TFTs made on a cellulose nanopaper substrate. The channel width and length are 60 μm and 30 μm, respectively. Figs. 1(b), (c), and (d) illustrate the transfer characteristics, output characteristics and linear field-effect mobility as a function gate voltage of an a-IGZO TFT fabricated on a cellulose nanopaper substrate. The on-paper TFT exhibits a field-effect mobility mobility of 4.23 cm2V-1s-1, on/off current ratio of 2.17× 107, threshold voltage of 4.35 V and subthreshold swing of 0.695 V/dec.
The result paves a way toward large-area-compatible and scalable flexible green electronics productions.
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P-type tin monoxide thin-film transistors on cellulose nanopaper substrates
Get PDFOxide-based thin-film transistors (TFTs) possess advantages such as relatively high mobility, low process temperature and good uniformity, which make them attractive for flexible electronics applications. Most flexible oxide-based TFTs reported today were made on plastic substrates. In this work, flexible inverted-staggered bottom-gate p-type tin monoxide (SnO) thin-film transistors (TFTs) were demonstrated on cellulose nanopaper substrates using a photolithography-compatible direct-fabrication approach. The paper substrate was formed by drop-casting suspension containing cellulose nanofibers and cellulose nanocrystals on a rigid carrier substrate. A buffer layer consisting of parylene, SiNx and SiO2 was then deposited to protect the paper substrate from processing gases and chemicals. The processing temperatures of the TFT were kept ≤ 200°C to ensure the paper substrate remained intact during the process. The channel, gate, source, and drain patterns were defined by using conventional photolithography techniques. Fig. 1(a) shows the micrograph of p-type SnO TFTs made on a cellulose nanopaper substrate. The channel width and length are 60 μm and 30 μm, respectively. Figs. 1(b), (c), and (d) illustrate the transfer characteristics, output characteristics and linear field-effect mobility as a function gate voltage of a p-type SnO TFT fabricated on a cellulose nanopaper substrate. The on-paper SnO TFT exhibits a field-effect mobility of 1.21 cm2V-1s-1, threshold voltage of 3.56 V, subthreshold swing of 2.36 V/dec and on/off current ratio of 2.06×103.
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Ambipolar oxide thin-film transistor-based artificial synapses
Get PDFMany intelligent behaviors, such as learning and perception, are affected by external environmental stimuli in the human nervous system. Therefore, one of the significant challenges is to develop an artificial synapse device with reconfigurable excitatory and inhibitory responses for artificial intelligence systems with human-like perceptual capability.
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Invited; CMOS inverters and circuits based on oxide thin-film transistors
Get PDFThin-film transistors (TFTs) based on oxide semiconductors have the advantage of promising carrier mobilities and good switching characteristics, and they can be fabricated by low-temperature and scalable processes. Complementary metal-oxide-semiconductor (CMOS) technology employing oxide TFTs shows great potential in enabling flexible electronics with versatile functionalities and low-static power consumptions. Here flexible CMOS inverters comprising p-type SnO TFTs and n-type ZnO or IGZO TFTs integrated in three different configurations were implemented and compared, as shown in Fig. 1. First, the planar inverter comprising bottom-gated SnO and ZnO TFTs with a geometric aspect ratio, (W/L)p / (W/L)n, of 5 had a static voltage gain of ~ 10 V/V at a supplied voltage (VDD) of 10 V [1]. However, the gain decreased as the inverter was subjected to a mechanical tensile strain, which may be ascribed to the degradation of TFT mobilities.
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