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Invited; Atomic-order surface reaction of reactant gas on group IV semiconductor (100) surface
Get PDFAtomic-order surface reactions of reactant gases on group IV semiconductor (100) surface in ultra-clean hotwall low-pressure CVD are described as a function of reactant gas partial pressure with the fitting parameters. Now, assuming that one reactant molecule occupies one free surface site according to Langmuir-type model, total adsorption site density n0 on the (100) substrate surface is given by the sum of free site density Qs and the site density QMs where reactant molecule M is adsorbed. Surface adsorption velocity on the surface is given by dQMs/dt = kMsPMQs - k-MsQMs = kMsPMn0 - (kMsPM + k-M)QMs, where kMs and k-Ms is adsorption and desorption rate constants of M, respectively, and PM is partial pressure of M.
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Process design of a fully integrated continuous biopharmaceutical process using economic and ecological impact assessment
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Marching toward implementation of an ultra-high density dynamic perfusion process
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Leucine and Isoleucine derivatives as bioavailable alternatives for canonical amino acids in cell culture media to enable next generation bioprocesses
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Integrated semi-continuous manufacturing of lentiviral vectors
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Ex vivo expansion and differentiation of erythroblasts: From culture dishes to stirred tank reactors for the production of red blood cells
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Transient expression of CHIKV VLP in large stirred tank bioreactors
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Expression of stress proteins during fed batch and perfusion cultures
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Closing the loop on cell culture analyzer variability
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Quantitation of amino acids in diverse mammalian cell culture media types with the REBEL at-line analyzer
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